EP2387796A4 - System and method for inspecting a wafer - Google Patents

System and method for inspecting a wafer Download PDF

Info

Publication number
EP2387796A4
EP2387796A4 EP10731446.0A EP10731446A EP2387796A4 EP 2387796 A4 EP2387796 A4 EP 2387796A4 EP 10731446 A EP10731446 A EP 10731446A EP 2387796 A4 EP2387796 A4 EP 2387796A4
Authority
EP
European Patent Office
Prior art keywords
inspecting
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10731446.0A
Other languages
German (de)
French (fr)
Other versions
EP2387796A2 (en
EP2387796B1 (en
Inventor
Ajharali Amanullah
Albert Archwamety
Hongtu Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Tech and Instruments Pte Ltd
Original Assignee
Semiconductor Tech and Instruments Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SG200900229-6A external-priority patent/SG163442A1/en
Application filed by Semiconductor Tech and Instruments Pte Ltd filed Critical Semiconductor Tech and Instruments Pte Ltd
Publication of EP2387796A2 publication Critical patent/EP2387796A2/en
Publication of EP2387796A4 publication Critical patent/EP2387796A4/en
Application granted granted Critical
Publication of EP2387796B1 publication Critical patent/EP2387796B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/001Industrial image inspection using an image reference approach
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/40Analysis of texture
    • G06T7/41Analysis of texture based on statistical description of texture
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8822Dark field detection
    • G01N2021/8825Separate detection of dark field and bright field
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/10Image acquisition modality
    • G06T2207/10141Special mode during image acquisition
    • G06T2207/10152Varying illumination
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/20Special algorithmic details
    • G06T2207/20212Image combination
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
EP10731446.0A 2009-01-13 2010-01-13 System and method for inspecting a wafer Active EP2387796B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG200900229-6A SG163442A1 (en) 2009-01-13 2009-01-13 System and method for inspecting a wafer
SG200901110-7A SG164293A1 (en) 2009-01-13 2009-02-16 System and method for inspecting a wafer
PCT/SG2010/000006 WO2010082902A2 (en) 2009-01-13 2010-01-13 System and method for inspecting a wafer

Publications (3)

Publication Number Publication Date
EP2387796A2 EP2387796A2 (en) 2011-11-23
EP2387796A4 true EP2387796A4 (en) 2017-10-18
EP2387796B1 EP2387796B1 (en) 2021-09-22

Family

ID=54601546

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10731446.0A Active EP2387796B1 (en) 2009-01-13 2010-01-13 System and method for inspecting a wafer

Country Status (12)

Country Link
US (1) US8885918B2 (en)
EP (1) EP2387796B1 (en)
JP (1) JP5934874B2 (en)
KR (1) KR101646743B1 (en)
CN (1) CN101853797B (en)
HK (1) HK1149367A1 (en)
IL (1) IL213946A (en)
MY (1) MY188165A (en)
PT (1) PT2387796T (en)
SG (1) SG164293A1 (en)
TW (1) TWI551855B (en)
WO (1) WO2010082902A2 (en)

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TW201234464A (en) * 2011-02-14 2012-08-16 Horng Terng Automation Co Ltd Breaking point height detection method of wafer breaking
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US9595091B2 (en) * 2012-04-19 2017-03-14 Applied Materials Israel, Ltd. Defect classification using topographical attributes
US9858658B2 (en) 2012-04-19 2018-01-02 Applied Materials Israel Ltd Defect classification using CAD-based context attributes
US8896827B2 (en) 2012-06-26 2014-11-25 Kla-Tencor Corporation Diode laser based broad band light sources for wafer inspection tools
JP6025489B2 (en) * 2012-10-11 2016-11-16 株式会社ニューフレアテクノロジー Inspection device and inspection device system
US9189844B2 (en) * 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
TWI490482B (en) * 2013-06-06 2015-07-01 Chroma Ate Inc Defect inspection method for semiconductor element
US10079183B2 (en) * 2013-06-26 2018-09-18 Kla-Tenor Corporation Calculated electrical performance metrics for process monitoring and yield management
JP6002112B2 (en) * 2013-11-07 2016-10-05 東京エレクトロン株式会社 Substrate defect analysis apparatus, substrate processing system, substrate defect analysis method, program, and computer storage medium
US9772297B2 (en) 2014-02-12 2017-09-26 Kla-Tencor Corporation Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
CN103871921A (en) * 2014-02-21 2014-06-18 上海华力微电子有限公司 Wafer defect monitoring analysis method based on server
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CN104198495A (en) * 2014-09-02 2014-12-10 上海华力微电子有限公司 Method for detecting step evolution abnormality of semiconductor substrate
US9734422B2 (en) * 2014-11-12 2017-08-15 Kla-Tencor Corporation System and method for enhanced defect detection with a digital matched filter
US9816940B2 (en) * 2015-01-21 2017-11-14 Kla-Tencor Corporation Wafer inspection with focus volumetric method
TWI627588B (en) * 2015-04-23 2018-06-21 日商思可林集團股份有限公司 Inspection device and substrate processing apparatus
JP6496832B2 (en) * 2015-09-30 2019-04-10 富士フイルム株式会社 Image registration apparatus, image registration method, and image registration system
DE102016107900B4 (en) * 2016-04-28 2020-10-08 Carl Zeiss Industrielle Messtechnik Gmbh Method and device for determining the edge of a measurement object in optical measurement technology
US10768114B2 (en) * 2016-04-29 2020-09-08 Synaptive Medical (Barbados) Inc. Multi-modal optical imaging system for tissue analysis
US10192302B2 (en) * 2016-05-25 2019-01-29 Kla-Tencor Corporation Combined patch and design-based defect detection
CN108878307B (en) * 2017-05-11 2020-12-08 北京北方华创微电子装备有限公司 Chip detection system and chip detection method
EP3635771A4 (en) * 2017-06-08 2021-03-10 Rudolph Technologies, Inc. Wafer inspection system including a laser triangulation sensor
CN109387518B (en) * 2017-08-02 2022-06-17 上海微电子装备(集团)股份有限公司 Automatic optical detection method
US10402963B2 (en) 2017-08-24 2019-09-03 Kla-Tencor Corporation Defect detection on transparent or translucent wafers
KR102464279B1 (en) * 2017-11-15 2022-11-09 삼성디스플레이 주식회사 A device for detecting a defect and a method of driving the same
EP3735121A4 (en) * 2017-12-28 2020-12-23 Fuji Corporation Tracing device
US10854486B2 (en) 2018-09-19 2020-12-01 Kla Corporation System and method for characterization of buried defects
CN109285933B (en) * 2018-09-27 2019-09-17 先进光电器材(深圳)有限公司 A kind of die-bonding method and terminal
IL263097B2 (en) * 2018-11-18 2024-01-01 Inspekto A M V Ltd Optimizing a set-up stage in an automatic visual inspection process
CN109596639A (en) * 2018-11-30 2019-04-09 德淮半导体有限公司 Defect detecting system and defect inspection method
TWI699465B (en) * 2019-05-16 2020-07-21 亞亞科技股份有限公司 Wafer inner and outer layer imaging device
US20210143039A1 (en) * 2019-11-12 2021-05-13 Applied Materials, Inc. Systems and methods for controlling non-uniformity
KR102342827B1 (en) * 2019-11-18 2021-12-24 그린정보통신(주) Wafer defect detecting system semiconductor photolithography process
EP4050560B1 (en) * 2021-01-08 2023-07-12 Changxin Memory Technologies, Inc. Wafer testing method and apparatus, and device and storage medium
CN113034474A (en) * 2021-03-30 2021-06-25 无锡美科微电子技术有限公司 Test method for wafer map of OLED display
TWI782589B (en) * 2021-06-23 2022-11-01 力晶積成電子製造股份有限公司 Wafer searching method and device
KR20230033445A (en) 2021-09-01 2023-03-08 에스케이하이닉스 주식회사 Method for failure analysis on semiconductor wafer and system thereof
TWI783667B (en) * 2021-09-03 2022-11-11 由田新技股份有限公司 Automatic image inspection method, apparatus, computer readable medium with stored programs, and computer program product with stored programs

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US5822055A (en) * 1995-06-06 1998-10-13 Kla Instruments Corporation Optical inspection of a specimen using multi-channel responses from the specimen using bright and darkfield detection
US6324298B1 (en) * 1998-07-15 2001-11-27 August Technology Corp. Automated wafer defect inspection system and a process of performing such inspection
US6829559B2 (en) * 2000-09-20 2004-12-07 K.L.A.-Tencor Technologies Methods and systems for determining a presence of macro and micro defects on a specimen

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US5822055A (en) * 1995-06-06 1998-10-13 Kla Instruments Corporation Optical inspection of a specimen using multi-channel responses from the specimen using bright and darkfield detection
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Also Published As

Publication number Publication date
PT2387796T (en) 2021-11-16
TWI551855B (en) 2016-10-01
WO2010082902A2 (en) 2010-07-22
JP5934874B2 (en) 2016-06-15
SG164293A1 (en) 2010-09-29
CN101853797A (en) 2010-10-06
TW201100779A (en) 2011-01-01
JP2012515332A (en) 2012-07-05
EP2387796A2 (en) 2011-11-23
WO2010082902A3 (en) 2010-10-28
KR101646743B1 (en) 2016-08-08
IL213946A0 (en) 2011-08-31
US20100189339A1 (en) 2010-07-29
CN101853797B (en) 2015-11-25
KR20100083745A (en) 2010-07-22
HK1149367A1 (en) 2011-09-30
IL213946A (en) 2017-01-31
EP2387796B1 (en) 2021-09-22
MY188165A (en) 2021-11-24
US8885918B2 (en) 2014-11-11

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