EP2181464A4 - Cellule solaire ayant une structure poreuse et son procédé de fabrication - Google Patents

Cellule solaire ayant une structure poreuse et son procédé de fabrication

Info

Publication number
EP2181464A4
EP2181464A4 EP08793370.1A EP08793370A EP2181464A4 EP 2181464 A4 EP2181464 A4 EP 2181464A4 EP 08793370 A EP08793370 A EP 08793370A EP 2181464 A4 EP2181464 A4 EP 2181464A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
solar cell
porous structure
porous
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08793370.1A
Other languages
German (de)
English (en)
Other versions
EP2181464A2 (fr
Inventor
Il-Hyoung Jung
Ju-Hwan Yun
Jong-Hwan Kim
Jin-Ah Kim
Sun-Hee Kim
Ji-Hoon Ko
Young-Hyun Lee
Bum-Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070084157A external-priority patent/KR20090019600A/ko
Priority claimed from KR1020070106215A external-priority patent/KR20090040728A/ko
Priority claimed from KR1020070131101A external-priority patent/KR20090063653A/ko
Priority claimed from KR1020080001763A external-priority patent/KR20090076035A/ko
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of EP2181464A2 publication Critical patent/EP2181464A2/fr
Publication of EP2181464A4 publication Critical patent/EP2181464A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EP08793370.1A 2007-08-21 2008-08-20 Cellule solaire ayant une structure poreuse et son procédé de fabrication Withdrawn EP2181464A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020070084157A KR20090019600A (ko) 2007-08-21 2007-08-21 고효율 태양전지 및 그의 제조방법
KR1020070106215A KR20090040728A (ko) 2007-10-22 2007-10-22 다공성 표면을 가지는 반도체 웨이퍼 기판을 이용한 벌크형태양전지 및 그의 제조방법
KR1020070131101A KR20090063653A (ko) 2007-12-14 2007-12-14 Ｐｎ접합소자의 제조방법 및 상기 ｐｎ 접합소자를포함하는 태양전지
KR1020080001763A KR20090076035A (ko) 2008-01-07 2008-01-07 표면 부동태화된 다공성 구조의 벌크형 태양전지와 그제조방법
PCT/KR2008/004857 WO2009025502A2 (fr) 2007-08-21 2008-08-20 Cellule solaire ayant une structure poreuse et son procédé de fabrication

Publications (2)

Publication Number Publication Date
EP2181464A2 EP2181464A2 (fr) 2010-05-05
EP2181464A4 true EP2181464A4 (fr) 2015-04-01

Family

ID=40378827

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08793370.1A Withdrawn EP2181464A4 (fr) 2007-08-21 2008-08-20 Cellule solaire ayant une structure poreuse et son procédé de fabrication

Country Status (3)

Country Link
EP (1) EP2181464A4 (fr)
JP (1) JP2010527163A (fr)
WO (1) WO2009025502A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
KR101002682B1 (ko) * 2008-08-28 2010-12-21 삼성전기주식회사 태양전지 및 그 제조방법
JP5300681B2 (ja) * 2009-09-30 2013-09-25 東京エレクトロン株式会社 太陽電池の製造方法
JP5340103B2 (ja) * 2009-09-30 2013-11-13 東京エレクトロン株式会社 太陽電池
CA2815754A1 (fr) * 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Systemes et procedes chimiques par voie humide de production de substrats de silicium noir
JP5424270B2 (ja) 2010-05-11 2014-02-26 国立大学法人東京農工大学 半導体ソーラーセル
CN101976703B (zh) * 2010-07-28 2011-12-14 常州天合光能有限公司 降低表面复合减反膜电池的工艺
CN101964367A (zh) * 2010-08-23 2011-02-02 中国科学院微电子研究所 一种多孔结构的衬底及其制备方法
KR101658677B1 (ko) * 2010-12-16 2016-09-21 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101528864B1 (ko) 2011-01-26 2015-06-15 가부시키가이샤 사무코 태양전지용 웨이퍼 및 그 제조 방법
KR101763319B1 (ko) 2011-01-31 2017-08-01 한양대학교 산학협력단 전기화학적 식각법을 이용한 태양 전지의 제조 방법
CN103283001A (zh) * 2011-03-08 2013-09-04 可持续能源联盟有限责任公司 蓝光响应增强的高效黑硅光伏器件
CN102820370B (zh) * 2011-06-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 硅片的制绒处理方法
CN107046079A (zh) * 2016-02-05 2017-08-15 上海凯世通半导体股份有限公司 掺杂方法
CN106653939B (zh) * 2016-11-17 2018-03-27 横店集团东磁股份有限公司 一种应用于晶硅太阳能电池的热氧化工艺
CN114583015A (zh) * 2022-03-25 2022-06-03 安徽华晟新能源科技有限公司 一种异质结电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 太陽電池およびその製造方法
EP0933822A2 (fr) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrat pour former un composant semi-conducteur à couches minces et à résistance mécanique élevée et méthode pour produire un composant semi-conducteur à couches minces et à résistance mécanique élevée
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016619A (ko) * 1997-08-18 1999-03-15 손욱 다공성 실리콘을 이용한 전계발광소자의 제조방법
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
JP3838911B2 (ja) * 2001-12-25 2006-10-25 京セラ株式会社 太陽電池素子の製造方法
KR100922346B1 (ko) * 2002-04-03 2009-10-21 삼성에스디아이 주식회사 태양전지 및 그 제조 방법
JP2005072388A (ja) * 2003-08-26 2005-03-17 Kyocera Corp 太陽電池素子の製造方法
JP2005136062A (ja) * 2003-10-29 2005-05-26 Sharp Corp 太陽電池の製造方法
KR100677374B1 (ko) * 2005-11-14 2007-02-02 준 신 이 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 太陽電池およびその製造方法
EP0933822A2 (fr) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrat pour former un composant semi-conducteur à couches minces et à résistance mécanique élevée et méthode pour produire un composant semi-conducteur à couches minces et à résistance mécanique élevée
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOYNOV SVETOSLAV ET AL: "Black nonreflecting silicon surfaces for solar cells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 88, no. 20, 16 May 2006 (2006-05-16), pages 203107 - 203107, XP012081745, ISSN: 0003-6951, DOI: 10.1063/1.2204573 *

Also Published As

Publication number Publication date
EP2181464A2 (fr) 2010-05-05
WO2009025502A3 (fr) 2009-04-23
WO2009025502A2 (fr) 2009-02-26
JP2010527163A (ja) 2010-08-05

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