EP2109890A4 - Depletion-mode mosfet circuit and applications - Google Patents

Depletion-mode mosfet circuit and applications

Info

Publication number
EP2109890A4
EP2109890A4 EP08728213A EP08728213A EP2109890A4 EP 2109890 A4 EP2109890 A4 EP 2109890A4 EP 08728213 A EP08728213 A EP 08728213A EP 08728213 A EP08728213 A EP 08728213A EP 2109890 A4 EP2109890 A4 EP 2109890A4
Authority
EP
European Patent Office
Prior art keywords
depletion
applications
mode mosfet
mosfet circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08728213A
Other languages
German (de)
French (fr)
Other versions
EP2109890A2 (en
Inventor
Went T Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keystone Semiconductor Inc
Original Assignee
Keystone Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Keystone Semiconductor Inc filed Critical Keystone Semiconductor Inc
Priority to EP10172462A priority Critical patent/EP2287909A2/en
Priority to EP10172459A priority patent/EP2287908A2/en
Publication of EP2109890A2 publication Critical patent/EP2109890A2/en
Publication of EP2109890A4 publication Critical patent/EP2109890A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
EP08728213A 2007-01-24 2008-01-24 Depletion-mode mosfet circuit and applications Withdrawn EP2109890A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10172462A EP2287909A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications
EP10172459A EP2287908A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88636307P 2007-01-24 2007-01-24
PCT/US2008/051913 WO2008092004A2 (en) 2007-01-24 2008-01-24 Depletion-mode mosfet circuits and applications

Publications (2)

Publication Number Publication Date
EP2109890A2 EP2109890A2 (en) 2009-10-21
EP2109890A4 true EP2109890A4 (en) 2010-02-10

Family

ID=39645162

Family Applications (3)

Application Number Title Priority Date Filing Date
EP08728213A Withdrawn EP2109890A4 (en) 2007-01-24 2008-01-24 Depletion-mode mosfet circuit and applications
EP10172462A Withdrawn EP2287909A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications
EP10172459A Withdrawn EP2287908A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP10172462A Withdrawn EP2287909A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications
EP10172459A Withdrawn EP2287908A2 (en) 2007-01-24 2008-01-24 Depletion-mode MOSFET circuits and applications

Country Status (4)

Country Link
EP (3) EP2109890A4 (en)
JP (1) JP2010517204A (en)
CN (1) CN101632176A (en)
WO (1) WO2008092004A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5577082B2 (en) * 2009-12-08 2014-08-20 ルネサスエレクトロニクス株式会社 Semiconductor device
TWI386109B (en) * 2009-12-17 2013-02-11 Askey Computer Corp A static protection method and apparatus used in a production line
CN101807905B (en) * 2010-02-11 2012-05-23 西安捷威半导体有限公司 Drive circuit of deplete semiconductor switching element and drive method thereof
GB201102473D0 (en) 2011-02-11 2011-03-30 Esg Pool Ventilation Ltd Heating and cooling system and related methods
CN102651366B (en) * 2012-01-12 2013-06-12 京东方科技集团股份有限公司 Static discharge protective circuit and display device comprising same
FI20150334A (en) * 2015-01-14 2016-07-15 Artto Mikael Aurola Improved semiconductor configuration
FI20150294A (en) * 2015-10-23 2017-04-24 Ari Paasio Low power logic family
CN108806742B (en) * 2017-05-04 2022-01-04 汤朝景 Random access memory and having circuitry, methods and apparatus associated therewith
TWI688192B (en) * 2018-11-06 2020-03-11 新唐科技股份有限公司 Control circuit and semiconductor structure thereof
US11101796B2 (en) 2020-01-06 2021-08-24 Diodes Incorporated Gate drive apparatus and control method
CN113078888B (en) * 2020-01-06 2024-04-19 达尔科技股份有限公司 Gate driving apparatus and control method
CN117130423A (en) * 2023-03-24 2023-11-28 安世半导体科技(上海)有限公司 Reference voltage circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062000A (en) * 1974-10-03 1977-12-06 Mostek Corporation Current sense amp for static memory cell
US5966324A (en) * 1996-12-05 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells
US6363005B1 (en) * 2001-03-07 2002-03-26 United Microelectronics Corp. Method of increasing operating speed of SRAM
US6639835B2 (en) * 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
US6992915B2 (en) * 2002-03-27 2006-01-31 Regents Of The University Of California Self reverse bias low-power high-performance storage circuitry and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW382164B (en) * 1996-04-08 2000-02-11 Hitachi Ltd Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic
JP2976903B2 (en) * 1996-10-08 1999-11-10 日本電気株式会社 Semiconductor storage device
US6879199B2 (en) * 2002-02-15 2005-04-12 Valere Power, Inc. PWM control signal generation method and apparatus
US7345511B2 (en) * 2002-08-29 2008-03-18 Technion Research & Development Foundation Ltd. Logic circuit and method of logic circuit design
US6906962B2 (en) * 2002-09-30 2005-06-14 Agere Systems Inc. Method for defining the initial state of static random access memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062000A (en) * 1974-10-03 1977-12-06 Mostek Corporation Current sense amp for static memory cell
US5966324A (en) * 1996-12-05 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells
US6639835B2 (en) * 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
US6363005B1 (en) * 2001-03-07 2002-03-26 United Microelectronics Corp. Method of increasing operating speed of SRAM
US6992915B2 (en) * 2002-03-27 2006-01-31 Regents Of The University Of California Self reverse bias low-power high-performance storage circuitry and related methods

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008092004A2 *
Y. TAKAHASHI ET AL.: "A Multiple-Valued SRAM with Combined Single-Electron and MOS Transistors", IEEE TRANS.ELECTRON DEVICES, vol. 43, 1996, pages 1213 - 1214, XP002627000 *

Also Published As

Publication number Publication date
EP2287908A2 (en) 2011-02-23
EP2287909A2 (en) 2011-02-23
CN101632176A (en) 2010-01-20
JP2010517204A (en) 2010-05-20
EP2109890A2 (en) 2009-10-21
WO2008092004A3 (en) 2008-10-16
WO2008092004A2 (en) 2008-07-31

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20090813

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/088 20060101AFI20090826BHEP

Ipc: G11C 11/412 20060101ALI20091230BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20100113

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20100504

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20110310