EP2102950A4 - Etched-facet ridge lasers with etch-stop - Google Patents

Etched-facet ridge lasers with etch-stop Download PDF

Info

Publication number
EP2102950A4
EP2102950A4 EP06848109.2A EP06848109A EP2102950A4 EP 2102950 A4 EP2102950 A4 EP 2102950A4 EP 06848109 A EP06848109 A EP 06848109A EP 2102950 A4 EP2102950 A4 EP 2102950A4
Authority
EP
European Patent Office
Prior art keywords
etch
etched
stop
ridge lasers
facet ridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06848109.2A
Other languages
German (de)
French (fr)
Other versions
EP2102950A1 (en
Inventor
Alex A. Behfar
Cristian B. Stagarescu
Alfred T Schremer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MACOM Technology Solutions Holdings Inc
Original Assignee
MACOM Technology Solutions Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MACOM Technology Solutions Holdings Inc filed Critical MACOM Technology Solutions Holdings Inc
Publication of EP2102950A1 publication Critical patent/EP2102950A1/en
Publication of EP2102950A4 publication Critical patent/EP2102950A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP06848109.2A 2006-12-26 2006-12-26 Etched-facet ridge lasers with etch-stop Withdrawn EP2102950A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2006/049182 WO2008079120A1 (en) 2006-12-26 2006-12-26 Etched-facet ridge lasers with etch-stop

Publications (2)

Publication Number Publication Date
EP2102950A1 EP2102950A1 (en) 2009-09-23
EP2102950A4 true EP2102950A4 (en) 2017-05-31

Family

ID=39562793

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06848109.2A Withdrawn EP2102950A4 (en) 2006-12-26 2006-12-26 Etched-facet ridge lasers with etch-stop

Country Status (4)

Country Link
EP (1) EP2102950A4 (en)
JP (1) JP5264764B2 (en)
CN (1) CN101569067B (en)
WO (1) WO2008079120A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994011930A1 (en) * 1992-11-17 1994-05-26 Gte Laboratories Incorporated A monolithically integrated semiconductor structure and method of fabricating such structure
US20020110341A1 (en) * 2001-02-09 2002-08-15 Rong-Heng Yuang Manufacturing method for edge-emitting or edge-coupled waveguide optoelectronic devices
WO2003077390A1 (en) * 2002-03-13 2003-09-18 Optillion Ab Method for manufacturing a photonic device and a photonic device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01151284A (en) * 1987-12-09 1989-06-14 Canon Inc Semiconductor laser
KR100243417B1 (en) * 1997-09-29 2000-02-01 이계철 High power semiconductor laser with ridge waveguide structure
JP2002026453A (en) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp Ridge-waveguide semiconductor laser and method of manufacturing the same
WO2003038956A1 (en) * 2001-10-29 2003-05-08 Matsushita Electric Industrial Co., Ltd. Production method for semiconductor light emitting element
JP2004014569A (en) * 2002-06-03 2004-01-15 Toshiba Corp Semiconductor laser and its manufacturing method
US20040105476A1 (en) * 2002-08-19 2004-06-03 Wasserbauer John G. Planar waveguide surface emitting laser and photonic integrated circuit
US20050083982A1 (en) * 2003-10-20 2005-04-21 Binoptics Corporation Surface emitting and receiving photonic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994011930A1 (en) * 1992-11-17 1994-05-26 Gte Laboratories Incorporated A monolithically integrated semiconductor structure and method of fabricating such structure
US20020110341A1 (en) * 2001-02-09 2002-08-15 Rong-Heng Yuang Manufacturing method for edge-emitting or edge-coupled waveguide optoelectronic devices
WO2003077390A1 (en) * 2002-03-13 2003-09-18 Optillion Ab Method for manufacturing a photonic device and a photonic device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008079120A1 *

Also Published As

Publication number Publication date
JP2010512659A (en) 2010-04-22
WO2008079120A1 (en) 2008-07-03
EP2102950A1 (en) 2009-09-23
CN101569067A (en) 2009-10-28
JP5264764B2 (en) 2013-08-14
CN101569067B (en) 2012-04-25

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20090710

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: STAGARESCU, CRISTIAN, B.

Inventor name: BEHFAR, ALEX A.

Inventor name: SCHREMER, ALFRED T

DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: BEHFAR, ALEX A.

Inventor name: SCHREMER, ALFRED T

Inventor name: STAGARESCU, CRISTIAN, B.

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: M/A-COM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20170504

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 5/00 20060101AFI20170427BHEP

17Q First examination report despatched

Effective date: 20181031

STAA Information on the status of an ep patent application or granted ep patent

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Effective date: 20190312