EP1939941B1 - Method of operating a switching element - Google Patents
Method of operating a switching element Download PDFInfo
- Publication number
- EP1939941B1 EP1939941B1 EP06798318A EP06798318A EP1939941B1 EP 1939941 B1 EP1939941 B1 EP 1939941B1 EP 06798318 A EP06798318 A EP 06798318A EP 06798318 A EP06798318 A EP 06798318A EP 1939941 B1 EP1939941 B1 EP 1939941B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- switching element
- voltage
- deposition
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000007789 sealing Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000010954 inorganic particle Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 62
- 230000008021 deposition Effects 0.000 description 55
- 238000005259 measurement Methods 0.000 description 12
- 238000000926 separation method Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Definitions
- the present invention relates to a method for operating a switching element.
- a further reduction in size of electric elements has been desired along with a reduction in size and an increase in density of devices.
- a nanostructure represented by functional organic molecules and nanoparticles has been extensively studied. It is considered to be effective to utilize the properties of the nanostructure for electric elements in order to reduce the size of the elements. Therefore, extensive studies on the nanostructure have been conducted by research institutes, companies, and the like.
- an element has attracted attention which utilizes two electrodes separated by a minute gap (such a pair of electrodes may be hereinafter referred to as "nanogap electrodes") and the gap is filled with functional organic molecules.
- nanogap electrodes an element catenane molecules are disposed in the gap between nanogap electrodes formed using platinum. This document describes that the catenane molecules undergo an oxidation-reduction reaction by applying a voltage between the electrodes to enable a switching operation.
- nanogap electrodes an element in which the gap is filled with nanoparticles has also attracted attention.
- Nature, 433 (2005) 47 to 50 discloses an element in which nanogap electrodes are formed using silver sulfide and platinum and silver particles are disposed in the gap between the electrodes.
- the silver particles expand or contract due to an electrochemical reaction so that the electrodes can be connected or disconnected to enable a switching operation.
- the above-mentioned switching elements require that special synthetic molecules or a complicated metal complex is disposed between the nanogap electrodes. Since these switching elements have a mechanism which utilizes an intramolecular chemical reaction or a reaction between different atoms, these switching elements have dependence on the direction of the applied voltage. This limits utilization of these switching elements . Moreover, since a chemical reaction is utilized for a switching operation, the element tends to deteriorate.
- JP-A-2005-79335 discloses a method of producing nanogap electrodes in which the gap between the nanogap electrodes is reduced, for example.
- US 2003/0180989 A1 discloses a method for forming first and second linear structures (nanowires) that meet at right angles, there being a gap at the point at which the structures meet.
- the gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor.
- the gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.
- An object of the invention is to provide a nonvolatile switching by means of an element which has a very simple structure and can perform stable and repeated switching operations. This object is solved by an operation method according to claim 1.
- the dependent claims are directed to advantageous embodiments of the invention.
- the switching element used according to the invention comprises:
- This configuration provides a nonvolatile switching element which has a very simple structure and can stably and repeatedly perform switching operations.
- the distance G refers to the shortest distance between the first electrode and the second electrode in the interelectrode gap.
- the distance G between the first electrode and the second electrode may be 0.1 nm ⁇ G ⁇ 20 nm.
- the switching element used according to the invention may further comprise a sealing member which includes at least the interelectrode gap.
- a pressure inside the sealing member may be 2 ⁇ 10 5 Pa or less.
- a material for the first electrode may be at least one material selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium; rhodium, copper, tungsten, tantalum, carbon, and alloys thereof.
- a material for the second electrode may be at least one material selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium, rhodium, copper, tungsten, tantalum, carbon, and alloys thereof.
- At least one of the first electrode and the second electrode may have a multilayer structure.
- a resistance between the first electrode and the second electrode may be 1 kilohm to 1 megaohm when the switching element is turned ON, and may be 1 megaohm to 100 teraohms when the switching element is turned OFF.
- FIG 1 is a cross-sectional view schematically showing the main portion of a switching element 100 according to one embodiment which can be provided to realize the invention.
- FIG. 2 is an enlarged cross-sectional view schematically showing the main portion of the switching element 100.
- FIG. 3 is a plan view schematically showing the main portion of the switching element 100 according to this embodiment.
- FIG 4 is a schematic view showing an example in which a sealing member is provided over the switching element 100 to form a switching device 1000.
- the switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, wherein a distance G between the first electrode 20 and the second electrode 30 is 0 nm ⁇ G ⁇ 50 nm.
- the insulating substrate 10 has a function of a support which allows the two electrodes 20 and 30 of the switching element 100 to be provided at an interval.
- the structure and the material for the insulating substrate 10 are not particularly limited insofar as the insulating substrate 10 exhibits insulating properties.
- the surface of the insulating substrate 10 may be flat, or may have elevations or depressions.
- a substrate produced by forming an oxide film or the like on the surface of a semiconductor substrate (e.g., Si substrate) may be used as the insulating substrate 10.
- the insulating substrate 10 may be an insulating substrate on which an oxide film or the like is not formed.
- an oxide such as silicon oxide (SiO 2 ), or a nitride such as silicon nitride (Si 3 N 4 ) is suitably used.
- silicon oxide (SiO 2 ) is preferable as the material for the insulating substrate 10 from the viewpoint of adhesion to the electrodes 20 and 30 described later and an increased degree of freedom relating to production.
- the first electrode 20 is provided on the insulating substrate 10.
- the first electrode 20 is one electrode of the switching element 100, and makes a pair with the second electrode 30 described later to enable a switching operation.
- the shape of the first electrode 20 is arbitrary. It is desirable that at least a lateral dimension (width) W1 (see FIG. 3 ) of a portion of the first electrode 20 which faces the second electrode 30 be in the range of 5 nm ⁇ W1.
- a thickness T1 of the first electrode 20 (see FIGS. 1 and 2 ) is arbitrary. It is desirable that the thickness T1 be in the range of 5 nm ⁇ T1 in a state in which the second electrode 30 is formed.
- FIGS. 1 and 2 is arbitrary. It is desirable that the thickness T1 be in the range of 5 nm ⁇ T1 in a state in which the second electrode 30 is formed.
- the first electrode 20 includes a first electrode lower portion 22 and a first electrode upper portion 24 for convenience of description relating to production steps described later.
- the material for the first electrode 20 be at least one material selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium, rhodium, copper, tungsten, tantalum, carbon, and alloys thereof. Different metals may be used in layers in order to increase adhesion to the insulating substrate 10.
- the first electrode 20 may have a stacked structure of chromium and gold.
- the second electrode 30 is provided on the insulating substrate 10.
- the second electrode 30 is the other electrode of the switching element 100, and makes a pair with the first electrode 20 to enable a switching operation.
- the shape of the second electrode 30 is arbitrary. It is desirable that at least a lateral dimension (width) W2 (see FIG 3 ) of a portion of the second electrode 30 which faces the first electrode 20 be in the range of 5 nm ⁇ W2 ⁇ W1.
- a thickness T2 of the second electrode 30 is arbitrary. It is desirable that the thickness T2 be in the range of 5 nm ⁇ T2 ⁇ T1 from the viewpoint of the strength of the electrode and the peel strength from the support.
- the material for the second electrode 30 be selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium, rhodium, copper, tungsten, tantalum, carbon, and alloys thereof. Different metals may be used in layers in order to increase adhesion to the insulating substrate 10.
- the second electrode 30 may have a stacked structure of chromium and gold.
- the interelectrode gap 40 is provided so that the distance G between the first electrode 20 and the second electrode 30 is 0 nm ⁇ G ⁇ 50 nm (e.g., 0.1 nm ⁇ G ⁇ 20 nm) (see FIG 2 ).
- the distance G is more preferably 0.1 nm ⁇ G ⁇ 10 nm.
- the interelectrode gap 40 has a function of causing a switching phenomenon of the switching element 100.
- the closest interelectrode portion may be formed at one or more locations in a region in which the first electrode 20 faces the second electrode 30. If the distance G exceeds 50 nm, the electric field for the movement of metal elements becomes insufficient, and therefore the switching element 100 may be not operated.
- the lower limit may be referred to as the minimum distance at which a tunneling current may occur, although determination based on microscopy measurement is difficult. Specifically, the lower limit is a theoretical value of the distance at which current-voltage characteristics do not follow Ohm's law when the element operates and a quantum-mechanical tunneling effect is observed.
- a sealing member 50 may be provided to include at least the interelectrode gap 40. It is desirable that the sealing member 50 enclose the entire element including the insulating substrate 10.
- the sealing member 50 has a function of preventing the interelectrode gap 40 from contacting the atmosphere.
- the shape of and the material for the sealing member 50 are arbitrary insofar as the sealing member 50 has the above function.
- the sealing member 50 allows the switching element 100 to operate more stably.
- As the material for the sealing member 50 a known semiconductor sealing material may be used. A gas barrier layer or the like formed of a known substance may be provided, if necessary. When the entire nanogap electrodes are placed in an appropriate vacuum chamber and used as a switching element, the sealing member 50 may be omitted.
- the inside of the sealing member 50 may be under reduced pressure, or may be filled with various substances.
- the pressure inside the sealing member 50 may be set at 2 ⁇ 10 5 Pa or less. More preferably, a pressure P inside the sealing member 50 or inside a vacuum chamber in which the nanogap electrodes are placed is set at 10 -9 Pa ⁇ P ⁇ 2 ⁇ 10 5 Pa.
- the inside of the sealing member 50 may be filled with an inert gas such as dry air, nitrogen, or rare gas or an electrically inert organic solvent such as toluene.
- a method of producing the switching element 100 may include the following steps.
- the method of producing the switching element 100 includes (1) a step of providing the insulating substrate 10, (2) a first resist pattern formation step, (3) a first deposition step, (4) a first lift-off step, (5) a second resist pattern formation step, (6) a second deposition step, (7) a second lift-off step, (8) an electric field separation step, and (9) a sealing step.
- the following description is given taking an example in which the first electrode 20 includes the first electrode lower portion 22 and the first electrode upper portion 24 for convenience of description relating to the production steps.
- the reference numerals are provided in the same manner as in FIG 1 .
- FIG. 5 is a schematic view illustrative of the first deposition step.
- FIG. 6 is a schematic view showing a circuit formed in the electric field separation step.
- the insulating substrate 10 a commercially-available glass substrate, an Si substrate provided with an oxide film, or another substrate having an insulating surface may be used.
- a conductive substrate such as an Si substrate
- a desired insulating film may be formed on the surface of the conductive substrate using a known method such as a heat treatment, an oxidation treatment, deposition, or sputtering, and the resulting substrate may be used as the insulating substrate 10.
- a resist pattern 60 for forming the first electrode lower portion 22 is formed on the insulating substrate 10 using a known method such as photolithography.
- the thickness of the resist pattern 60 is arbitrary insofar as the function of the resist pattern 60 is not impaired.
- the thickness of the resist pattern 60 may be set at 1 micrometer.
- the first electrode lower portion 22 is formed by the first deposition step. This step may be carried out using a known deposition device.
- the insulating substrate 10 is disposed so that the deposition target surface is inclined when viewed from a deposition source. As shown in FIG 5 , when the angle formed by the deposition target surface and a travel direction of particles evaporated from the deposition source is referred to as ⁇ 1, the insulating substrate 10 is disposed so that 0° ⁇ ⁇ 1 ⁇ 90° is satisfied (this deposition method is hereinafter referred to as "oblique deposition"). As a result, the first electrode lower portion 22 is formed in such a shape that the end face inclines, as shown in FIG 5 .
- the angle formed by the inclination of the end face of the first electrode lower portion 22 and the surface of the substrate 10 is referred to as ⁇ 1'.
- the angle ⁇ 1' may be changed by adjusting the shape of the resist pattern 60, the metal deposition properties of the surface of the substrate 10, the angle ⁇ 1, and the like.
- the elements can be formed with high reproducibility when the conditions are identical. Therefore, the angle ⁇ 1' can be determined by measuring the deposition results under identical conditions.
- the distance between the deposition source and the deposition target surface varies depending on the deposition device used. Deposition necessary for this embodiment can be performed when the distance between the deposition source and the deposition target surface is about 500 mm or more.
- a material selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium, rhodium, copper, tungsten, tantalum, carbon, and alloys thereof is deposited one or more times.
- a plurality of deposition operations may be performed to form a two-layer structure such as depositing chromium and then depositing gold.
- the thickness of the first electrode lower portion 22 obtained by the first deposition step is arbitrary insofar as electric conductivity can be achieved for example, when selecting gold as the material for the first electrode lower portion 22, the thickness of the first electrode lower portion 22 may be set at 5 nm or more.
- the first lift-off step is carried out using a known method.
- a stripper suitable for the material for the resist pattern 60 is used. This step causes the first electrode lower portion 22 to be formed while removing a sacrifice electrode 22a formed on the resist pattern 60 (see FIG. 5 ).
- a second resist pattern is formed using a known method such as photolithography.
- a resist pattern (not shown) for forming the second electrode 30 and the first electrode upper portion 24 is formed by this step.
- An opening in the resist pattern is formed to cross the end (portion which serves as one of the nanogap electrodes) of the first electrode lower portion 22 obtained by the above step.
- the thickness of the resist pattern is arbitrary.
- the second electrode 30 is formed by the second deposition step.
- the first electrode upper portion 24 is formed when forming the second electrode 30 (see FIG 2 ).
- This step may be carried out using a known deposition device.
- This step is carried out using oblique deposition. As shown in FIG. 2 , when the angle formed by the deposition target surface and a travel direction of particles evaporated from the deposition source is referred to as ⁇ 2, the insulating substrate 10 is disposed so that 0° ⁇ ⁇ 2 ⁇ 1' ⁇ 90° is satisfied when ⁇ 1' ⁇ 90°, and 0° ⁇ 2 ⁇ 90° is satisfied when 90° ⁇ 1'.
- the end (i.e., portion which faces the first electrode 20) of the second electrode 30 is formed by this step.
- the first electrode upper portion 24 is also formed by this step. It is preferable to increase the distance between the deposition source and the deposition target surface during deposition since the parallelism of the travel path of the deposition particles increases in the same manner as in the first deposition step.
- the distance between the deposition source and the deposition target surface varies depending on the device used. Deposition can be performed without causing a problem when the distance between the deposition source and the deposition target surface is about 500 mm or more.
- a material selected from gold, silver, platinum, palladium, nickel, aluminum, cobalt, chromium, rhodium, copper, tungsten, tantalum, carbon, and alloys thereof is deposited one or more times.
- the interelectrode gap 40 is formed utilizing the shadow of the first electrode lower portion 22 formed by deposition particles during oblique deposition in the second deposition step. Therefore, an interelectrode gap 40 having a desired electrode-to-electrode distance G can be obtained by adjusting at least one of the thickness of the first electrode lower portion 22 and the oblique deposition angle ⁇ 2 in the second deposition step. Therefore, it is desirable that the thickness of the second electrode 30 obtained by the second deposition step be smaller than the thickness of the first electrode 20.
- the second lift-off step is carried out using a known method.
- a stripper suitable for the material of the resist pattern is used. This causes the first electrode 20 and the second electrode 30 to be formed, whereby nanogap electrodes are obtained.
- FIG. 6 is a schematic view showing a circuit when performing the electric field separation step.
- a variable resistor Rv, a fixed resistor Rc, and a power supply are connected in series with the short-circuited electrodes.
- the fixed resistor Rc is provided to prevent a situation in which a current in an amount equal to or larger than the desired amount flows to break the electrodes.
- the amount of current necessary for separating the electrodes is several to several tens of milliamperes (mA).
- variable resistor Rv The resistance of the variable resistor Rv is slowly reduced from the initial value (high resistance) and the adjustment is stopped when the flow of current has stopped, whereby nanogap electrodes (i.e., switching element 100) having a desired electrode-to-electrode distance G can be obtained.
- This step is carried out using known hermetic seal technology. This step may be carried out with ceramic sealing, glass sealing, plastic sealing, or metal cap sealing, and may be also be carried out in a desired atmosphere.
- the switching element 100 according to this embodiment has a very simple structure and can perform stable and repeated switching operations. Specifically, the switching element 100 according to this embodiment has a very simple structure in which the switching element 100 includes only the nanogap electrodes and does not require other organic molecules or inorganic particles. Since the switching element 100 according to this embodiment does not include a substance which deteriorates, the switching element 100 can stably perform repeated switching operations. Moreover, the switching element 100 according to this embodiment is nonvolatile.
- FIG 7 schematically shows an example of a current-voltage curve of the switching element 100.
- the horizontal axis indicates a voltage applied between the nanogap electrodes of the switching element 100
- the vertical axis indicates current.
- FIG. 7 contains symbols A to H and 0 for convenience.
- FIG. 8 schematically shows the sequence of the voltage applied between the nanogap electrodes of the switching element 100.
- the horizontal axis indicates the elapsed time
- the vertical axis indicates the applied voltage.
- the voltage applied to the switching element 100 and the current do not depend on the polarity of the switching element 100.
- the following description focuses on the right portion (i.e., voltage is positive) of FIG. 7 .
- Description of the portion in which the voltage is negative is omitted.
- the switching operation relating to the portion in which the voltage is negative corresponds the case where the polarity is reversed.
- the switching element 100 shows a negative resistance effect whereby the resistance increases as the applied voltage increases. In this region, the state of the switching element 100 changes depending on the applied voltage.
- This voltage region is hereinafter referred to as a transition region.
- the voltage in the transition region is instantaneously changed to a value around the point 0 (value between the point A and the E point in practice) (the operation of instantaneously changing the voltage to a value around the point 0 is hereinafter referred to as "voltage-cut operation")
- the resistance corresponding to the voltage applied to the element immediately before cutting the voltage can be obtained.
- the resistance of the element decreases as the voltage in the transition state which determines the resistance is set closer to the point A, and decreases as the voltage is set to be higher than the point A (the voltage dependence of the resistance in the transition region is described later in “5. Examples” with reference to FIG 14 ).
- the point B in the transition region indicates a point at which an intermediate state between a state in which the resistance is low (hereinafter referred to as "ON state”) and a state in which the resistance is high (hereinafter referred to as "OFF state”) after the voltage-cut operation.
- the voltage at the low-voltage-side edge (around the point A) of the transition region is referred to as a threshold voltage.
- a value around the point A is defined as the threshold value because the threshold value (i.e., voltage at which the minimum element resistance can be obtained in the transition region) does not necessarily coincide with the point A shown in FIG 7 and may differ to some extent from the point A depending on the operating voltage, the measurement environment, and the like.
- a state J in which the voltage is instantaneously cut is obtained by applying a rectangular pulse indicated by I in FIG. 8 .
- the applied voltage of the rectangular pulse I corresponds to the point C which is higher in voltage than the point B in the transition region in FIG 7 . It is desirable that the rectangular pulse width be 1 ns or more.
- a state in which the voltage is cut to about 0 is the region J shown in FIG. 8 .
- the region J corresponds to the region around the point 0 in FIG 7 . In this case, when a low voltage indicated as a measurement voltage in FIG 7 is applied, a current does not follow the curve D in FIG 7 and has an extremely small current value. Specifically, the OFF state is obtained.
- a state L in which the voltage is cut is then obtained by applying a rectangular pulse indicated by K in FIG 8 .
- the applied voltage of the rectangular pulse K corresponds to a voltage around the threshold voltage lower than the point B in the transition region in FIG. 7 . It is desirable that the pulse width of the rectangular pulse K be 100 ns or more.
- a current follows the curve D in FIG 7 (i.e., current flows through the element). Specifically, the ON state is obtained. The switching operation is possible since the element can be arbitrarily turned ON/OFF depending on the voltage applied before the voltage-cut operation.
- the period in which the applied voltage is set at about the threshold voltage is important. Specifically, it is desirable that the period in which the applied voltage is set at about the threshold voltage be 100 ns or more.
- a triangular wave indicated by N in FIG 8 may be used instead of the rectangular wave K in order to obtain the ON state.
- the triangular wave N must have a vertex at a voltage higher than the threshold value so that the triangular wave N crosses a voltage around the threshold voltage.
- the period in which the applied voltage is set to be higher than the threshold voltage is adjusted by adjusting a slope Q of the triangular wave N in FIG. 8 .
- the ON state is obtained by adjusting the slope Q so that the period in which the applied voltage is set at about the threshold voltage is 100 ns or more.
- the period of the triangular wave in which the applied voltage is set at about the threshold voltage is very short (in this case, it is desirable that the period in which the applied voltage is set at about the threshold voltage be 100 ns or less) (i.e., when a triangular wave M in FIG 8 is applied)
- the element is turned OFF.
- the value of the vertex of the triangular wave M is set at the point C in FIG. 7 in the same manner as the rectangular wave I.
- the period in which the applied voltage is set at about the threshold voltage is adjusted by adjusting the slope of the triangular wave M in a region P in FIG 8 .
- the switching element 100 may be driven using various sequences other than the above-described rectangular wave and triangular wave.
- a silicon substrate coated with a silicon oxide layer with a thickness of 300 nm was used as the insulating substrate 10.
- the thickness of the first resist pattern was set at 1 micrometer.
- the first resist pattern was formed so that the width W1 of the first electrode lower portion 22 in the horizontal direction was 100 micrometers.
- the first electrode lower portion 22 was formed by depositing chromium on the insulating substrate 10 to a thickness of 2 nm and then depositing gold so that the total thickness was 25 nm.
- the angle ⁇ 1 during oblique deposition in the first deposition step was set at 75°.
- the thickness of the second resist pattern was set at 1 micrometer.
- the second resist pattern was formed so that the width W2 of the second electrode 30 in the horizontal direction was 2 micrometers.
- the second electrode 30 was formed by depositing chromium on the insulating substrate 10 to a thickness of 2 nm and then depositing gold so that the total thickness was 15 nm. Therefore, the total thickness of the first electrode 20 was about 40 nm.
- the angle ⁇ 2 during oblique deposition in the second deposition step was set at 60°.
- the second lift-off step was then carried out. Since the first electrode 20 and the second electrode 30 of the switching element 100 in this state were partially short-circuited, the short-circuited portion was removed by performing the electric field separation step.
- the electric field separation conditions were as follows. The applied voltage was 1 V, and the resistance of the resistor Rc was 100 ohms.
- the resistance of the variable resistor Rv was gradually decreased from 100 kilohms to 0 ohm so that the amount of current was gradually increased.
- the amount of current when electric field separation occurred was about 4 mA.
- the switching element 100 was thus obtained.
- the resulting switching element 100 was placed in a vacuum chamber.
- the pressure inside the vacuum chamber was about 10 -5 Pa.
- FIG 9 shows an observation result for the switching element 100 according to this example using a scanning electron microscope.
- the switching element 100 was photographed at a accelerating voltage of 15 kV using a scanning electron microscope S-4300 (manufactured by Hitachi, Ltd.). The scanning speed was increased using a heating stage (resolution: about 5 nm).
- FIG 9 shows part of the first electrode 20 (upper side), part of the second electrode 30 (lower side), and part of the interelectrode gap 40 (horizontally extending dark portion at the center of the photograph). As shown in FIG. 9 , the first electrode is positioned close to the second electrode at a plurality of points in the interelectrode gap 40. A downward bold arrow indicates a portion in which the electrodes are closely positioned.
- the width of each gap was measured.
- the distance G between the first electrode 20 and the second electrode 30 in the observed area was about 8 nm.
- a portion in which the two electrodes of the switching element 100 are closely positioned may exist in an area other than the observed area.
- the shortest distance between the electrodes was estimated from the resistance.
- the resistance between the electrodes was about 60 kilohms when the element was turned ON. Therefore, the shortest distance between the electrodes was at least 0.1 nm or more based on calculations from the tunneling effect.
- FIG 10 is a schematic view showing a circuit used to evaluate the element characteristics.
- the evaluation circuit was formed by connecting the switching element 100 to a micro-prober device in a vacuum chamber.
- FIG 11 is a graph showing the measurement results for the I-V characteristics of the switching element 100 according to this embodiment using the circuit shown in FIG. 10 .
- the horizontal axis of the graph shown in FIG 11 indicates the net voltage applied to the switching element 100 obtained by subtracting voltage across the fixed resistor Rm from the circuit voltage.
- the vertical axis indicates a current which flows when applying each voltage measured using an ammeter.
- the I-V characteristics shown in FIG 11 were measured as follows. The applied voltage was set at 0 V when starting the measurement.
- FIG. 11 corresponds to FIG. 7 .
- the absolute value of the current is maximized when the applied voltage is +4 V and -4 V.
- the absolute value of the current rapidly decreases when the voltage is higher than +4 V.
- the absolute value of the current rapidly decreases when the voltage is lower than -4 V.
- the switching operation was performed as described in "4. Switching operation" utilizing this phenomenon. Specifically, a voltage (absolute value) of about 4 V was set to be the threshold voltage (corresponding to a point around the points A, B, E, and F in FIG. 7 ).
- FIG. 12 is a schematic view of the voltage sequence according to this example.
- the voltage of the pulse which causes the element to be turned OFF was set at +10 V.
- the voltage of the triangular wave which causes the element to be turned ON was swept from +9 V to +3 V and was cut at +3 V.
- the rectangular pulse I at +10 V was applied for 100 ms, and the resistance was measured in the region J for about 24 seconds at a measurement voltage of +0.2 V.
- the voltage was swept from +9 V to +3 V over one minute and then cut.
- the resistance was measured in the region L for about 24 seconds at a measurement voltage of +0.2 V.
- the resistance was measured by performing the above cycle 1000 times.
- FIG 13 shows part of the resistance measurement results according to this example.
- the horizontal axis indicates the elapsed time
- the vertical axis indicates the resistance when applying a voltage of +0.2 V.
- the resistance of the switching element 100 according to this embodiment in the ON state and the OFF state changed to only a small extent from the initial value during the repeated ON/OFF operations.
- the resistance in the ON state and the OFF state changed to only a small extent from the initial value even after the 1000-cycle measurements.
- the resistance between the first electrode 20 and the second electrode 30 of the switching element 100 was 10 to 200 kilohms in the ON state and was 100 megaohms to 10 gigaohms in the OFF state.
- the switching element 100 can be arbitrarily turned ON/OFF depending on the voltage input from the outside. Since the ON/OFF state of the element can be maintained after applying the voltage pulse, even if the voltage is not applied, the switching element 100 is a nonvolatile switching element.
- FIG 14 is a graph in which the horizontal axis indicates the voltage of the pulse which causes the element to be turned OFF and the vertical axis indicates the resistance across the switching element 100 immediately after applying the pulse.
- the horizontal axis of FIG 14 indicates the voltage of the 100-ms rectangular pulse I and the vertical axis indicates the resistance measured in the region J during repeated measurements.
- the resistance exceeds 1 megaohm when the voltage of the pulse exceeds about +5 V so that the OFF state is achieved.
- the resistance exceeds 10 gigaohms.
- the resistance exceeds 1 teraohm.
- the switching element 100 is a switching element of which the resistance in the OFF state can be arbitrarily set depending on the voltage of the pulse which causes the switching element to be turned OFF. Since the ON state can obtained at about +4 V, the switching element 100 can be arbitrarily set in at least four resistance states. Specifically, the resistance can be set at 10 kilohms to 1 megaohm when the switching element is turned ON, and can be set at 1 megaohm to 100 teraohms when the switching element is turned OFF.
- the resistance of the switching element using the nanogap electrodes can be set at several to 100 kilohms in the ON state, and can be set at several hundred kilohms to several gigaohms in the OFF state, for example. It is possible to utilize the switching element as an element which can generate a relatively low resistance and a high resistance by arbitrarily selecting two states from these resistance states.
- the switching element 100 according to this embodiment is a very simple switching element which does not use organic molecules, nanoparticles, and the like. Moreover, the switching element 100 can repeat switching operations in an extremely stable manner. Specifically, the switching element 100 according to this embodiment is a nonvolatile switching element which has a very simple structure and can perform stable and repeated switching operations.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005280633 | 2005-09-27 | ||
JP2006189380A JP4919146B2 (ja) | 2005-09-27 | 2006-07-10 | スイッチング素子 |
PCT/JP2006/318993 WO2007037210A1 (ja) | 2005-09-27 | 2006-09-25 | スイッチング素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1939941A1 EP1939941A1 (en) | 2008-07-02 |
EP1939941A4 EP1939941A4 (en) | 2010-09-08 |
EP1939941B1 true EP1939941B1 (en) | 2012-06-06 |
Family
ID=37899636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06798318A Expired - Fee Related EP1939941B1 (en) | 2005-09-27 | 2006-09-25 | Method of operating a switching element |
Country Status (6)
Country | Link |
---|---|
US (1) | US8093518B2 (ja) |
EP (1) | EP1939941B1 (ja) |
JP (1) | JP4919146B2 (ja) |
KR (1) | KR100990504B1 (ja) |
CN (1) | CN101273461B (ja) |
WO (1) | WO2007037210A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4919146B2 (ja) | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
JP2008311449A (ja) * | 2007-06-15 | 2008-12-25 | National Institute Of Advanced Industrial & Technology | シリコンによる2端子抵抗スイッチ素子及び半導体デバイス |
JP5216254B2 (ja) * | 2007-06-22 | 2013-06-19 | 株式会社船井電機新応用技術研究所 | メモリ素子アレイ |
JP5120874B2 (ja) * | 2007-06-22 | 2013-01-16 | 株式会社船井電機新応用技術研究所 | スイッチング素子 |
JP5190924B2 (ja) | 2007-08-09 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 2端子抵抗スイッチ素子及び半導体デバイス |
JP2009049287A (ja) | 2007-08-22 | 2009-03-05 | Funai Electric Advanced Applied Technology Research Institute Inc | スイッチング素子、スイッチング素子の製造方法及びメモリ素子アレイ |
JP5312782B2 (ja) * | 2007-12-20 | 2013-10-09 | 株式会社船井電機新応用技術研究所 | ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置 |
JP4544340B2 (ja) * | 2008-01-24 | 2010-09-15 | ソニー株式会社 | 電子素子およびその製造方法並びに記憶装置 |
JP5120883B2 (ja) * | 2008-02-26 | 2013-01-16 | 株式会社船井電機新応用技術研究所 | ナノギャップ素子の駆動方法及びナノギャップ素子を備える記憶装置 |
WO2009150751A1 (ja) * | 2008-06-13 | 2009-12-17 | 株式会社船井電機新応用技術研究所 | スイッチング素子 |
JP5415049B2 (ja) * | 2008-09-26 | 2014-02-12 | 株式会社船井電機新応用技術研究所 | メモリ素子、メモリ素子の製造方法およびメモリアレイ |
JP5419408B2 (ja) * | 2008-09-26 | 2014-02-19 | 株式会社船井電機新応用技術研究所 | メモリ素子、メモリ素子の製造方法、メモリアレイ構成のエレメントおよびメモリアレイ |
JP5526341B2 (ja) * | 2010-02-25 | 2014-06-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
JP5499364B2 (ja) * | 2010-08-26 | 2014-05-21 | 独立行政法人産業技術総合研究所 | メモリ素子の駆動方法及びメモリ素子を備える記憶装置 |
JP5527729B2 (ja) | 2010-08-26 | 2014-06-25 | 独立行政法人産業技術総合研究所 | メモリ素子の駆動方法及びメモリ素子を備える記憶装置 |
JP5900872B2 (ja) * | 2011-03-08 | 2016-04-06 | 国立研究開発法人産業技術総合研究所 | 電子デバイスおよび電子デバイスの作製方法 |
KR102123955B1 (ko) * | 2013-03-09 | 2020-06-17 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | 전자 소자 |
JP2015060890A (ja) | 2013-09-17 | 2015-03-30 | 株式会社東芝 | 記憶装置 |
US10396175B2 (en) | 2014-11-25 | 2019-08-27 | University Of Kentucky Research Foundation | Nanogaps on atomically thin materials as non-volatile read/writable memory devices |
JP6886304B2 (ja) | 2017-01-31 | 2021-06-16 | ヌヴォトンテクノロジージャパン株式会社 | 気体センサ |
KR20210010565A (ko) * | 2018-05-18 | 2021-01-27 | 글리코토페 게엠베하 | 항-muc1 항체 |
CN109911838B (zh) * | 2019-02-25 | 2021-01-19 | 华中科技大学 | 基于可控纳米裂纹实现的互补电阻开关器件及其控制方法 |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3971056A (en) | 1975-02-18 | 1976-07-20 | Cutler-Hammer, Inc. | Semiconductor temperature switches |
US4112458A (en) * | 1976-01-26 | 1978-09-05 | Cutler-Hammer, Inc. | Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C |
US4814943A (en) | 1986-06-04 | 1989-03-21 | Oki Electric Industry Co., Ltd. | Printed circuit devices using thermoplastic resin cover plate |
US5208693A (en) | 1991-03-29 | 1993-05-04 | Raynet Corporation | Transmission protocol for clamping receiver |
US5412498A (en) | 1991-03-29 | 1995-05-02 | Raynet Corporation | Multi-RC time constant receiver |
US5339211A (en) | 1991-05-02 | 1994-08-16 | Dow Corning Corporation | Variable capacitor |
US5285619A (en) | 1992-10-06 | 1994-02-15 | Williams International Corporation | Self tooling, molded electronics packaging |
US5648296A (en) | 1994-07-27 | 1997-07-15 | General Electric Company | Post-fabrication repair method for thin film imager devices |
JP3062029B2 (ja) | 1995-01-31 | 2000-07-10 | 日本電気株式会社 | ダイオードの順電圧を利用した温度検知方法 |
US6057038A (en) | 1996-08-02 | 2000-05-02 | Sharp Kabushiki Kaisha | Substrate for use in display element, method of manufacturing the same, and apparatus for manufacturing the same |
JP3030333B2 (ja) | 1997-03-14 | 2000-04-10 | 工業技術院長 | 電流及び電場誘起相転移を用いたスイッチング素子及びメモリー素子 |
US6163055A (en) | 1997-03-24 | 2000-12-19 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
KR100371102B1 (ko) | 1997-12-04 | 2003-02-06 | 엑손 테크놀로지스 코포레이션 | 프로그램형 표면하 군집 금속화 구조체 및 그 제조 방법 |
US6548843B2 (en) | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
US6391675B1 (en) | 1998-11-25 | 2002-05-21 | Raytheon Company | Method and apparatus for switching high frequency signals |
US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
JP3595744B2 (ja) | 1999-02-26 | 2004-12-02 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置 |
US6413880B1 (en) * | 1999-09-10 | 2002-07-02 | Starmega Corporation | Strongly textured atomic ridge and dot fabrication |
AU3970401A (en) | 1999-11-29 | 2001-06-04 | Trustees Of The University Of Pennsylvania, The | Fabrication of nanometer size gaps on an electrode |
US6483719B1 (en) | 2000-03-21 | 2002-11-19 | Spraylat Corporation | Conforming shielded form for electronic component assemblies |
US6791648B2 (en) | 2001-03-15 | 2004-09-14 | Seiko Epson Corporation | Liquid crystal device, projection display device and, manufacturing method for substrate for liquid crystal device |
US6900383B2 (en) | 2001-03-19 | 2005-05-31 | Hewlett-Packard Development Company, L.P. | Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces |
KR101008294B1 (ko) | 2001-03-30 | 2011-01-13 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
US6614102B1 (en) * | 2001-05-04 | 2003-09-02 | Amkor Technology, Inc. | Shielded semiconductor leadframe package |
US6803534B1 (en) | 2001-05-25 | 2004-10-12 | Raytheon Company | Membrane for micro-electro-mechanical switch, and methods of making and using it |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6891319B2 (en) | 2001-08-29 | 2005-05-10 | Motorola, Inc. | Field emission display and methods of forming a field emission display |
US6699779B2 (en) | 2002-03-22 | 2004-03-02 | Hewlett-Packard Development Company, L.P. | Method for making nanoscale wires and gaps for switches and transistors |
US6791441B2 (en) | 2002-05-07 | 2004-09-14 | Raytheon Company | Micro-electro-mechanical switch, and methods of making and using it |
JP4186727B2 (ja) | 2002-07-26 | 2008-11-26 | 松下電器産業株式会社 | スイッチ |
JP4224579B2 (ja) * | 2003-02-24 | 2009-02-18 | 独立行政法人産業技術総合研究所 | 電極架橋型分子素子の電極製造方法及び電極架橋型分子素子の製造方法 |
US20050136419A1 (en) | 2003-03-28 | 2005-06-23 | The Regents Of The University Of California | Method and apparatus for nanogap device and array |
US7113426B2 (en) | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
JP4314867B2 (ja) | 2003-04-08 | 2009-08-19 | ソニー株式会社 | Mems素子の製造方法 |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7211854B2 (en) | 2003-06-09 | 2007-05-01 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US7115960B2 (en) | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
JP3864229B2 (ja) * | 2003-08-29 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を有する素子 |
US7015504B2 (en) | 2003-11-03 | 2006-03-21 | Advanced Micro Devices, Inc. | Sidewall formation for high density polymer memory element array |
KR100565174B1 (ko) | 2003-11-20 | 2006-03-30 | 한국전자통신연구원 | 나노갭 전극소자의 제작 방법 |
JP3864232B2 (ja) * | 2003-12-10 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を用いた素子 |
US7164744B2 (en) | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
JP2006128438A (ja) * | 2004-10-29 | 2006-05-18 | National Institute Of Advanced Industrial & Technology | ナノギャップ電極の形成方法及びこれによって得られたナノギャップ電極並びに該電極を備えた素子 |
JP4475098B2 (ja) | 2004-11-02 | 2010-06-09 | ソニー株式会社 | 記憶素子及びその駆動方法 |
JP4783045B2 (ja) | 2004-11-17 | 2011-09-28 | 株式会社東芝 | スイッチング素子 |
US8003969B2 (en) * | 2004-12-27 | 2011-08-23 | Nec Corporation | Switching device, drive and manufacturing method for the same, integrated circuit device and memory device |
KR100679704B1 (ko) | 2005-01-10 | 2007-02-06 | 한국과학기술원 | 분자소자와 바이오 센서를 위한 나노갭 또는 나노 전계효과 트랜지스터 제작방법 |
WO2006075731A1 (ja) | 2005-01-17 | 2006-07-20 | Nec Corporation | 固体電解質スイッチング素子およびその製造方法ならびに集積回路 |
JP4701452B2 (ja) | 2005-02-23 | 2011-06-15 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法 |
DE102005009057A1 (de) | 2005-02-28 | 2006-08-31 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Starter für Niederdruckentladungslampen |
JP4575837B2 (ja) | 2005-05-19 | 2010-11-04 | シャープ株式会社 | 不揮発性記憶素子及びその製造方法 |
US7541227B2 (en) | 2005-06-02 | 2009-06-02 | Hewlett-Packard Development Company, L.P. | Thin film devices and methods for forming the same |
US20060278879A1 (en) | 2005-06-09 | 2006-12-14 | Cabot Microelectronics Corporation | Nanochannel device and method of manufacturing same |
JP2007049084A (ja) | 2005-08-12 | 2007-02-22 | Toshiba Corp | スイッチ素子、メモリ素子および磁気抵抗効果素子 |
KR100682952B1 (ko) | 2005-08-31 | 2007-02-15 | 삼성전자주식회사 | 나노탄성 메모리 소자 및 그 제조 방법 |
JP4919146B2 (ja) | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
JP4054881B2 (ja) | 2006-02-06 | 2008-03-05 | 松下電器産業株式会社 | 単電子半導体素子の製造方法 |
US8432239B2 (en) | 2006-11-20 | 2013-04-30 | Massachusetts Institute Of Technology | Micro-electro mechanical tunneling switch |
JP4446054B2 (ja) | 2007-03-23 | 2010-04-07 | 独立行政法人産業技術総合研究所 | 不揮発性記憶素子 |
JP2008311449A (ja) | 2007-06-15 | 2008-12-25 | National Institute Of Advanced Industrial & Technology | シリコンによる2端子抵抗スイッチ素子及び半導体デバイス |
JP5120874B2 (ja) * | 2007-06-22 | 2013-01-16 | 株式会社船井電機新応用技術研究所 | スイッチング素子 |
KR101303579B1 (ko) | 2007-07-19 | 2013-09-09 | 삼성전자주식회사 | 전기기계적 스위치 및 그 제조방법 |
JP5312782B2 (ja) * | 2007-12-20 | 2013-10-09 | 株式会社船井電機新応用技術研究所 | ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置 |
WO2009150751A1 (ja) * | 2008-06-13 | 2009-12-17 | 株式会社船井電機新応用技術研究所 | スイッチング素子 |
-
2006
- 2006-07-10 JP JP2006189380A patent/JP4919146B2/ja not_active Expired - Fee Related
- 2006-09-25 EP EP06798318A patent/EP1939941B1/en not_active Expired - Fee Related
- 2006-09-25 CN CN2006800353971A patent/CN101273461B/zh not_active Expired - Fee Related
- 2006-09-25 WO PCT/JP2006/318993 patent/WO2007037210A1/ja active Application Filing
- 2006-09-25 KR KR1020087010074A patent/KR100990504B1/ko active IP Right Grant
- 2006-09-25 US US11/992,883 patent/US8093518B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1939941A4 (en) | 2010-09-08 |
US8093518B2 (en) | 2012-01-10 |
US20090251199A1 (en) | 2009-10-08 |
CN101273461B (zh) | 2010-07-14 |
KR20080059602A (ko) | 2008-06-30 |
EP1939941A1 (en) | 2008-07-02 |
WO2007037210A1 (ja) | 2007-04-05 |
KR100990504B1 (ko) | 2010-10-29 |
CN101273461A (zh) | 2008-09-24 |
JP2007123828A (ja) | 2007-05-17 |
JP4919146B2 (ja) | 2012-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1939941B1 (en) | Method of operating a switching element | |
Hui et al. | Graphene and related materials for resistive random access memories | |
US10090463B2 (en) | Non-volatile solid state resistive switching devices | |
JP4446054B2 (ja) | 不揮発性記憶素子 | |
US6518156B1 (en) | Configurable nanoscale crossbar electronic circuits made by electrochemical reaction | |
Johnson et al. | Memristive switching of single-component metallic nanowires | |
US8716688B2 (en) | Electronic device incorporating memristor made from metallic nanowire | |
Almadhoun et al. | Bipolar resistive switching in junctions of gallium oxide and p-type silicon | |
US9406789B2 (en) | Nanoscale variable resistor/electromechanical transistor | |
US8653912B2 (en) | Switching element | |
JP2008124188A (ja) | 電極構造体及びその製造方法、並びに電子デバイス | |
Zhitenev et al. | Molecular nano-junctions formed with different metallic electrodes | |
US8604458B2 (en) | Two-terminal resistance switching device and semiconductor device | |
JP5120872B2 (ja) | スイッチング素子 | |
JP2011176041A (ja) | 単一金属酸化物ナノ粒子による抵抗変化メモリおよびその作製方法 | |
Pósa | Resistive switching in ultrasmall nanogap devices | |
Ito et al. | Simultaneous fabrication of nanogaps using field-emission-induced electromigration | |
Wells et al. | Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects | |
Nagashima et al. | A oxide nanowire for probing nanoscale memristive switching | |
JP2011176211A (ja) | スイッチング素子 | |
Likharev et al. | CMOL technology development roadmap | |
Zhitenev et al. | Conductance of molecular nanojunctions: roles of surface topography and metal contacts | |
Kase et al. | Field-emission-induced electromigration method for precise tuning of electrical properties of Ni-based single-electron transistors | |
Janes et al. | Circuit characteristics of molecular electronic components | |
Liu | Electron transport through aluminum oxide tunnel barriers and OPE-based molecular junctions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20080401 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB PL |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB PL |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20100809 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 45/00 20060101AFI20100730BHEP |
|
DAX | Request for extension of the european patent (deleted) | ||
17Q | First examination report despatched |
Effective date: 20110228 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602006029991 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0029660000 Ipc: H01L0045000000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 45/00 20060101AFI20111209BHEP |
|
RTI1 | Title (correction) |
Free format text: METHOD OF OPERATING A SWITCHING ELEMENT |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ONO, MASATOSHI Inventor name: TAKAHASHI, TSUYOSHI Inventor name: ABE, HIDEKAZU Inventor name: MIZUTANI, WATARU Inventor name: FURUTA, SHIGEO Inventor name: SHIMIZU, TETSUO Inventor name: NAITOH, YASUHISA Inventor name: HORIKAWA, MASAYO |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: NAITOH, YASUHISA Inventor name: MIZUTANI, WATARU Inventor name: SHIMIZU, TETSUO Inventor name: HORIKAWA, MASAYO Inventor name: TAKAHASHI, TSUYOSHI Inventor name: ONO, MASATOSHI Inventor name: ABE, HIDEKAZU Inventor name: FURUTA, SHIGEO |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ONO, MASATOSHI Inventor name: MIZUTANI, WATARU Inventor name: TAKAHASHI, TSUYOSHI Inventor name: NAITOH, YASUHISA Inventor name: FURUTA, SHIGEO Inventor name: SHIMIZU, TETSUO Inventor name: HORIKAWA, MASAYO Inventor name: ABE, HIDEKAZU |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB PL |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602006029991 Country of ref document: DE Effective date: 20120802 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20120606 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R082 Ref document number: 602006029991 Country of ref document: DE Representative=s name: ROOS, PETER, DIPL.-PHYS.UNIV. DR.RER.NAT., DE Ref country code: DE Ref legal event code: R082 Ref document number: 602006029991 Country of ref document: DE Representative=s name: ROOS, PETER, DIPL.-PHYS. UNIV. DR.RER.NAT., DE |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20130307 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602006029991 Country of ref document: DE Effective date: 20130307 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R082 Ref document number: 602006029991 Country of ref document: DE Representative=s name: ROOS, PETER, DIPL.-PHYS.UNIV. DR.RER.NAT., DE Ref country code: DE Ref legal event code: R081 Ref document number: 602006029991 Country of ref document: DE Owner name: FUNAI ELECTRIC CO., LTD., DAITO-SHI, JP Free format text: FORMER OWNER: FUNAI ELECTRIC ADVANCED APPLIED, NATIONAL INSTITUTE OF ADVANCED, , JP Ref country code: DE Ref legal event code: R081 Ref document number: 602006029991 Country of ref document: DE Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP Free format text: FORMER OWNER: FUNAI ELECTRIC ADVANCED APPLIED, NATIONAL INSTITUTE OF ADVANCED, , JP Ref country code: DE Ref legal event code: R081 Ref document number: 602006029991 Country of ref document: DE Owner name: FUNAI ELECTRIC CO., LTD., DAITO-SHI, JP Free format text: FORMER OWNERS: FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC., DAITO-SHI, OSAKA, JP; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, TOKYO, JP Ref country code: DE Ref legal event code: R081 Ref document number: 602006029991 Country of ref document: DE Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP Free format text: FORMER OWNERS: FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC., DAITO-SHI, OSAKA, JP; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, TOKYO, JP Ref country code: DE Ref legal event code: R082 Ref document number: 602006029991 Country of ref document: DE Representative=s name: ROOS, PETER, DIPL.-PHYS. UNIV. DR.RER.NAT., DE |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E Free format text: REGISTERED BETWEEN 20150528 AND 20150603 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: TQ Owner name: FUNAI ELECTRIC CO., LTD., JP Effective date: 20150917 Ref country code: FR Ref legal event code: TQ Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP Effective date: 20150917 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 11 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20160921 Year of fee payment: 11 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20160816 Year of fee payment: 11 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20170925 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20180531 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170925 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20171002 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20180911 Year of fee payment: 13 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 602006029991 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200401 |