EP1854121A1 - Method and apparatus for euv light source target material handling - Google Patents
Method and apparatus for euv light source target material handlingInfo
- Publication number
- EP1854121A1 EP1854121A1 EP06720828A EP06720828A EP1854121A1 EP 1854121 A1 EP1854121 A1 EP 1854121A1 EP 06720828 A EP06720828 A EP 06720828A EP 06720828 A EP06720828 A EP 06720828A EP 1854121 A1 EP1854121 A1 EP 1854121A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma source
- source material
- reservoir
- droplet generator
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
Definitions
- the present invention related to laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light sources using plasma source material in the form of liquid metal and more specifically to systems for handling and delivering the liquid metal to a target formation mechanism.
- LPP laser produced plasma
- EUV extreme ultraviolet
- the target material at a plasma initiation site i.e., Laser Produced Plasma, "LPP" or may be created by a discharge between electrodes forming a plasma, e.g., at a plasma focus or plasma pinch site (i.e., Discharge Produced Plasma "DPP") and with a target material delivered to such a site at the time of the discharge.
- a plasma initiation site i.e., Laser Produced Plasma, "LPP”
- DPP Discharge Produced Plasma
- Target delivery in the form of droplets of plasma source material which may, e.g., be mass limited for better plasma generation conversion efficiency and lower debris formation, are known techniques for placing the plasma source material at the appropriate location and at the appropriate time for the formation of the plasma either by LPP or DPP.
- a number of problems are known to exist in the art regarding the handling of the target material, e.g., liquid metal feeding to a mechanism for the formation of target droplets either of the metal itself or a suspension, dispersion or other mixture of the target material with a liquid that is not reactive with the target material, e.g., water or alcohol for a tin metal plasma source material and a liquid plasma source material compound such as Li(CH 3 ).
- the present applications relates to aspects of embodiments of methods and apparatus for dealing with such problems.
- An EUV light source plasma source material handling system and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator
- the transfer mechanism may comprise a conduit interconnecting the supply reservoir and the droplet generator plasma source material reservoir.
- the transfer mechanism may comprise a valve isolating the supply reservoir from the droplet generator plasma source material reservoir.
- the supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form.
- the transfer mechanism may comprise a heater mechanism operative to apply heat primarily to a surface of the solid form of the plasma source material.
- the transfer mechanism may comprise a heat actuated valve between the supply reservoir and the droplet generator plasma source material reservoir.
- the apparatus and method may comprise a displaced heater mechanism disposed above a molten material gathering region of the supply reservoir operative to apply heat to a solid form of the plasma source material in the vicinity of the displaced heater mechanism.
- the apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line, a discharge end of the transfer mechanism positioned below the upper surface of the droplet generator plasma source material in the droplet generator plasma source material reservoir during such transferring.
- the apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir displaced above the droplet
- the apparatus and method may comprise a liquid plasma source material handling controller maintaining a level of droplet generator plasma source material in the droplet generator plasma source reservoir based upon the sensing of the level of the droplet generator plasma source material in the droplet generator plasma source material reservoir and the sensing of a level of liquid plasma source material in the supply reservoir.
- the apparatus and method may comprise the controller controlling a heating mechanism heating at least one surface of a solid form of the plasma source material in the supply reservoir prior to the transferring in response to a sensing of the level of liquid plasma source material in the supply reservoir.
- the apparatus and method may comprise the controller controlling the heating of at least one surface of a solid form of plasma source material in the supply reservoir after the transferring responsive to the sensing of a level of liquid plasma source material in the supply reservoir.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, comprising the steps of: utilizing an initial cleaning and conditioning process to achieve stable long-term performance, due to initial contamination due to liquid metal and plasma source material handling system component chemical interaction by providing an initial flush of the system. The flush is carried out at a selected temperature and introduced in sufficient quantity to
- the method and apparatus may comprise subjecting plasma source material handling system component surfaces in contact with the plasma source material to a passivation process.
- the passivation material may comprise an acid bath to leech out materials through the component surfaces reactive with molten plasma source material.
- the method and apparatus may comprise choosing materials for surfaces wetted by the liquid plasma source material to substantially limit the formation of intermetallic compounds by the wetted surface material and the liquid plasma source material.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: utilizing an inline filter intermediate the plasma source material supply system and the droplet generator plasma source material reservoir to prevent contaminants in the plasma source material reservoir from reaching the droplet generator plasma source material reservoir.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: mamtairiing temperatures in at least one selected portion of the material handling system so as to avoid thermal gradients within the at least one selected portion sufficient to cause solubility differences sufficient to precipitate out insoluble compounds as particulate.
- the method and apparatus may comprise maintaining at least one selected portion of the material handling system
- the at least one selected portion is selected from the capillary, a nozzle at the discharge end of the capillary and an output orifice in the nozzle.
- the method and apparatus may comprise an EUV light source plasma source material handling system which may comprise: a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator at temperature; a storage mechanism storing plasma source material in a solid form within the droplet generator plasma source material supply system to replenish the plasma source material in the molten portion of the supply system reservoir, the method and apparatus may comprise a porous separator separating a solid form storage portion of the plasma source material supply system reservoir from the molten plasma source material supply system reservoir; a heating mechanism heating the porous separator to inject liquid plasma source material into the molten portion of the plasma source material supply system reservoir by melting at least a portion of the solid form of the
- the method and apparatus may comprise a hopper in the plasma source material supply system reservoir containing plasma source material in a solid dispensable form comprising a remotely operated dispensing mechanism delivering a selected quantity of the solid dispensable plasma source material to the molten plasma material portion of the plasma source material supply system reservoir.
- the dispensable form may comprise a pellet form or a powder form.
- the apparatus and method may comprise a holding mechanism holding the solid form plasma source material separate from the molten portion of the plasma source material supply system reservoir; a segmented heating mechanism selectively heating a selected segment of the solid
- 2005-0017-02 form plasma source material in the plasma source material supply system reservoir to replenish the liquid form plasma source material in the molten portion of the plasma source material supply system reservoir.
- FIG. 1 shows schematically in block diagram form an EUV light source using LPP and target source material in the form of droplets of liquid according to aspects of an embodiment of the present invention
- FIG. 2 shows partly schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention
- FIG. 3 shows partly schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention
- FIG. 4 shows partly schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention
- FIG. 5 shows partly schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention
- FIG. 6 shows schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention
- FIG. 7 shows schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention.
- FIG. 8 shows schematically and partly in cross section a liquid droplet plasma source material handling system according to aspects of an embodiment of the present invention.
- FIG. 1 there is shown a schematic view of an overall broad conception for an EUV light source, e.g., a laser produced plasma EUV light source 20 according to an aspect of the present invention.
- the light source 20 may contain a pulsed laser system 22, e.g., one or more gas discharge excimer or molecular fluorine lasers operating at high power and high pulse repetition rate and may be one or more MOPA configured laser systems, e.g., as shown in United States Patents Nos. Patents Nos. 6,625,191, 6,549,551, and 6,567,450.
- the light source 20 may also include a target delivery system 24, e.g., delivering targets in the form of liquid droplets, solid particles or solid particles contained within liquid droplets.
- the targets may be delivered by the target delivery system 24, e.g., into the interior of a ⁇ chamber 26 to an irradiation site 28, otherwise known as an plasma formation site or the sight of the fire ball, i.e., where irradiation by the laser causes the plasma to form from the target material.
- irradiation site 28 otherwise known as an plasma formation site or the sight of the fire ball, i.e., where irradiation by the laser causes the plasma to form from the target material.
- Embodiments of the target delivery system 24 are described in more detail below.
- EUV or soft-x-ray e.g., at or about 13.5 nm
- the light source may also include a collector 30, e.g., a reflector, e.g., in the form of a truncated ellipse, with an aperture for the laser light to enter to the irradiation site 28.
- a collector 30 may be, e.g., an elliptical mirror that has a first focus at the plasma initiation site 28 and a second focus at the so-called intermediate point 40 (also called the intermediate focus 40) where the EUV light is output from the light source and input to, e.g., an elliptical mirror that has a first focus at the plasma initiation site 28 and a second focus at the so-called intermediate point 40 (also called the intermediate focus 40) where the EUV light is output from the light source and input to, e.g., an intermediate point 40 (also called the intermediate focus 40)
- the system 20 may also include a target position detection system 42.
- the pulsed system 22 may include, e.g., a master oscillator-power amplifier ("MOPA") configured dual chambered gas discharge laser system having, e.g., an oscillator laser system 44 and an amplifier laser system 48, with, e.g., a magnetic reactor-switched pulse compression and timing circuit 50 for the oscillator laser system 44 and a magnetic reactor-switched pulse compression and timing circuit 52 for the amplifier laser system 48, along with a pulse power timing monitoring system 54 for the oscillator laser system 44 and a pulse power timing monitoring system 56 for the amplifier laser system 48.
- the system 20 may also include an EUV light source controller system 60, which may also include, e.g., a target position detection feedback system 62 and a firing control system 64, along with, e.g., a laser beam positioning system 66.
- the target position detection system 42 may include a plurality of droplet imagers 70, 72 and 74 that provide input relative to the position of a target droplet, e.g., relative to the plasma initiation site, and provide these inputs to the target position detection feedback system, which can, e.g., compute a target position and trajectory, from which a target error can be computed, if not on a droplet by droplet basis then on average, which is then provided as an input to the system controller 60, which can, e.g., provide a laser position and direction correction signal, e.g., to the laser beam positioning system 66 that the laser beam positioning system can use, e.g., to control the position and direction of the laser position and direction changer 68, e.g., to change the focus point of the laser beam to a different ignition point 28.
- Input may also be provided to the target delivery system 24 to correct for positioning error of the targets, e.g., droplets of liquid plasma source material from the desired plasma initiation site,
- the imager 72 may, e.g., be aimed along an imaging line 75, e.g., aligned with a desired trajectory path of a target droplet 94 from the target delivery mechanism 92 to the desired plasma initiation site 28 and the imagers 74 and 76 may, e.g., be aimed along intersecting imaging lines 76 and 78 that intersect, e.g., along the desired trajectory path at some point 80 along the path before the desired
- the target delivery control system 90 in response to a signal from the system controller 60 may, e.g., modify, e.g., the release point and/or pointing direction of the target droplets 94 as released by the target delivery mechanism 92 to correct for errors in the target droplets arriving at the desired plasma initiation site 28.
- An EUV light source detector 100 at or near the intermediate focus 40 may also provide feedback to the system controller 60 that can be, e.g., indicative of the errors in such things as the timing and focus of the laser pulses to properly intercept the target droplets in the right place and time for effective and efficient LPP EUV light production.
- a large volume of liquid metal stored for usage in target droplet formation raises problems of heating to maintain the volume as a liquid and other related problems which will be understood by those skilled in the art, including also the need for operator interaction with the system to maintain the material and dross and slag buildup and potential for clogging relatively small openings in the target material handling and delivery system.
- a prototype tin droplet generator tested by applicants assignee Cymer was found to have a finite run time of approximately 3-4 hours at a droplet formation rate of 24,000/second. Refilling the prototype generator was found to require a substantial amount of time for cool down, disassembly, reassembly, and reheat. Increasing the generator chamber volume may work to resolve these operating efficiency issues, however, the ability to do this is limited, e.g., by the static head that develops, in addition to other problems noted above.
- Static head may induce dribbling and inhibit rapid shut off of the droplet formation by the droplet generator.
- a target material handling system 110 including a bulk material reservoir 112 as shown partly schematically and partly in cross section in FIG.' s 2 and 3 that enables the operator to refill a reservoir 114 in the target droplet generator 92 with minimal down time and effort.
- the droplet generator 92 reservoir chamber 114 may be coupled to a second, bulk reservoir chamber 112 chamber, e.g., through a valve 120. Both chambers 112, 114 may be closed volume with independent, active pressure control systems (not shown). In such a system, the operator may fill the bulk reservoir chamber 112, closes the lid 116, heat up the plasma source metal material to get it into the liquid form, open the valve 120, e.g., by heating a pipe 122 between the chambers 112, 114 with a heater 124, to form a liquid metal in the pipe 122 and then depressurize the chamber 114 and pressurize the chamber 112 (or otherwise pressurize the chamber 112 more than the chamber 114) to fill the target generator 92 chamber 114 from the bulk reservoir chamber 112.
- Periodic refilling of bulk chamber is required, e.g., when a low level is detected by a level detector 130 in the target droplet generator chamber 112 but can be done while droplet generator is hot thus saving time.
- the bulk chamber still requires periodic refilling which can inconvenience the operator depending upon frequency and type of material used.
- Lithium poses some special problems due to its reactivity, requiring, e.g., that it be handled in an inert environment. The larger the bulk chamber 114, the longer the time between refills.
- the large mass of molten metal in bulk reservoir can, e.g., produce large amounts of slag/dross thus affecting yield and possibly run time; a large static head will form and may result in overfilling of generator reservoir and other problems noted above; and a short and wide chamber can be used to minimize the static head but will maximize slag/dross formation due to the large surface area. Further, prolonged heat and cool down time is required,
- a bulk reservoir system 118 that can minirnize operator interaction, e.g., minimize the frequency of required refills and at the same time avoid the problems of too large a reservoir chamber 112.
- a bulk reservoir system 118 that can be utilized for a long period of time, e.g., up to six months or more to supply, e.g., lithium, and freeing the user from the task of refilling the bulk reservoir 112 more often.
- the bulk reservoir 112 can, e.g., be filled with, e.g., lithium at the manufacturer, e.g., in a more controlled environment than, e.g., a semiconductor microlithography fabrication facility and transported to the facility to replace a used bulk reservoir system 118, thereby reducing the problems of handling a highly reactive target source material such as lithium in a heated and liquid form, such as reacting with ambient materials in the users fabrication facility causing, e.g., contamination in what are intended to be highly contaminant free environments.
- the entire droplet generator system 110, with the bulk reservoir system 118 and the droplet generator 92 may be replaced with new units.
- a "Melt on Demand" bulk reservoir 112 feed system which may include, e.g., heating only the bottom of a solid piece 140 of plasma source target material thereby producing a small quantity of melt 142.
- the level sensor 132 can detect when the melt volume 144 in the droplet generator 92 reaches a minimum level. At this time, the chamber valve 120 can be opened and molten metal 142 conveyed from the bulk reservoir chamber 112 to the to the droplet generator chamber 114.
- the target delivery control system 90 may receive inputs from the level sensors 130, 132 and control the heaters, e.g., bottom heaters 150 to melt a given amount of the solid material 140, e.g., until the level sensor 132 indicate a given amount of liquid material 142 exists in the bulk reservoir 112 and also the heaters 124 to open the valve, or otherwise initiate fluid communication between the level sensors 130, 132 and control the heaters, e.g., bottom heaters 150 to melt a given amount of the solid material 140, e.g., until the level sensor 132 indicate a given amount of liquid material 142 exists in the bulk reservoir 112 and also the heaters 124 to open the valve, or otherwise initiate fluid communication between the
- the molten material 142 may be essentially all drained from the reservoir 112 and the bottom heaters 150 turned off by the controller 90. At the next replenishment, the heaters 150 may be turned on and the level sensor 132 used to indicated a desired amount of molten material 142 has been created prior to opening the valve 120 to drain essentially all of this molten material 142 into the reservoir 114 and then the heaters 150 may again be turned off to await the next needed replenishment of the reservoir 114.
- the molten material 144 may then be forced, e.g., under pressure through a capillary 164 which may be actuated by a piezoelectric actuator 162 under the control of the controller 90 to form droplets 94 at the output orifice 168 of a nozzle 166 including the capillary 164.
- a perforated heater 180 formed, e.g., by a wire mesh having openings 182 may be used to melt the solid material 140 above the molten material.
- the bottom heaters 150 may be kept on continuously or cycled to keep molten material 142 in the bulk reservoir chamber 112 until needed to be transferred to the droplet generator reservoir chamber 114, after which time the valve 120 may be closed off and the heater 180 used to replenish the supply of molten material 142 in the bulk reservoir 112.
- the molten material 142 may be essentially completely drained from the bulk reservoir 112 at each replenishment controlled by the controller 90 after which, when a next
- the heaters 180 may be actuated to create sufficient molten material 142, which may be assisted in being kept molten by bottom heaters 150 (or bottom heaters 150 may be eliminated) and the molten material 142 drained through the valve 120 into the chamber 114.
- the crust can otherwise clog filters and potentially the nozzle.
- any formed top slag/crust will have great difficulty in reaching the nozzle 166 as shown in FIG. 4 or the filter 210 region as shown in the embodiment of FIG. 5, since as the supply is replenished from the bottom. Furthermore the formed crust will not get buried in new material and act as a barrier between the old and new material. Also, since the material being added is never exposed to the atmosphere less contamination is introduced.
- FIG. 5 there is shown a liquid metal handling system 110 comprising more than one vessel of liquid metal 142 and 144.
- FIG. 5 depicts partly schematically and partly in cross section a two-vessel arrangement where the lower vessel 212 is used for jetting and is replenished from an upper vessel 214.
- a valve mechanical or freeze
- an inline filter 210 such as that shown in FIG. 5 or in co- pending applications referenced above, e.g., to prevent initial particles and/or larger contaminants formed over time in the up stream reservoir, e.g., 214, e.g., lithium or tin or compounds thereof
- a sufficiently large orifice not shown
- 2005-0017-02 15 efficiently flush the entire system. This in effect allows for a flush equivalent to several ours of actual operation with essentially the same amount of material flushing the system as would pass through the system during those several hours of actual operation with the normal sized output orifice.
- liquid tin using stainless vessels and parts these will need, e.g., to be passivated, e.g., in an acid bath to leech out impurities, e.g., iron from the outer layers of the stainless.
- impurities e.g., iron from the outer layers of the stainless.
- Such can otherwise dissolve in the tin and eventually form tin iron intermetallic compounds that are large enough to disturb or completely clog the output orifice 168.
- the materials wetted by the liquid plasma source material 142, 144 should be chosen to limit or eliminate the intermetallic compounds that exist, e.g., for tin, metals, e.g., molybdenum, tantalum or tungsten alloy can be used and for lithium, perhaps also molybdenum, tantalum or tungsten.
- the temperature of the system should be constant throughout normal operation (and in time) to within ⁇ 2 0 C, to avoid thermal gradients that can drive solubility differences and compound the problems with impurities and/or leeching products concentrating to the point where they exceed the solubility limit and become particulate.
- certain critical parts i.e. the nozzle 166 and/or the capillary 164 and/or the output orifice 168 and any parts downstream of the filters
- a hotter temperature e.g., about 25 0 C, but not the other way around.
- FIG. 6 show, by way of example, a supply system 230, which may comprise, e.g., a reservoir 231 having side walls 232 that are adapted to frictionally holding a solid piece of plasma source material 238, e.g., from having created theron roughened surface regions 232. From the solid plasma formation material 238 liquid/molten plasma formation material may be formed to establish or contribute to a molten plasma source material mass 236 in the reservoir. This may be accomplished by utilizing a series of discretely actuatable heater rings 234.
- a supply 240 which may comprise a supply
- a dispensable form of solid plasma source material dispenser e.g., a hopper 242
- solid plasma source material 244 in a dispensable form, e.g., pellets or powder and from which molten plasma source material 246 can be formed or contributed to, e.g., by opening a hopper remotely controlled door 248.
- FIG. 8 there is shown partly schematically and partly in cross section, a plasma source material supply container 250, including, e.g., a plasma source material reservoir 252 containing a molten plasma source material 254.
- a droplet generator plasma source material reservoir 256 containing a reservoir 257 containing molten plasma source material 258.
- the reservoirs 252 and 261 may be interconnected by an interconnection tube 260, containing, e.g., a cold valve 262, through which liquid/molten plasma source material may be transmitted, e.g., as shown illustratively by force of gravity with the valve 262 open.
- a means to force liquid/molten plasma material 254 to the reservoir 257 e.g., by applying a pressure Pi through pressure connection 264 and a pressure P 2 through a pressure connection 266, such that P 1 > P 2 , with P 2 at some pressure selected to at least assist in making the droplet generator (not shown in FIG. 8) in fluid communication with the reservoir 257 operate properly.
- an EUV light source plasma source material handling system and method which may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary, which may comprise a generally narrowed passageway in the droplet generator intermediate the reservoir and an output orifice of the droplet generator and may also comprise some form of a a nozzle portion at the discharge end of the capillary, including for example simply a narrowing portion of the capillary leading to a discharge opening/orifice.
- the source material reservoir and capillary may, e.g., be maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form as will be understood by those skilled in the art, dependent upon the type of plasma source material, e.g., tin or lithium, which are metals that are solid at room
- the plasma source material may also be in some form, e.g., a compound of tin or lithium that is liquid at room temperature, and may be kept in solid form by reducing its temperature and later again allowing it to go to some ambient temperature at which it becomes liquid.
- Liquid and molten are used in this application and the appended claims to mean the same in this regard, i.e., regardless of whether or not the technically speaking its ordinary room temperature form is solid and it is heated to make it liquid/molten or its ordinary room temperature form is liquid and it is cooled to make it solid/frozen.
- a plasma source material supply system may be included, e.g., which may have a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and hold at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line.
- the specifics of the replenishing amount may be a balance, e.g., between the frequency of transfers from one reservoir to the other that may be desirable and the possibility of, e.g., slag layers forming in the reservoir(s) if too large in size.
- a transfer mechanism which may be as simple as a gravity driven transfer conduit, e.g., with a control valve, or utilize a suitable pump capable of pumping the material being transmitted, or differentially pressurized chambers, or other forms of transferring liquid plasma source material from, e.g., the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature or on line, as will be understood by those skilled in the fluid materials handling art.
- an advantage of the present invention allows for simple, easy, relatively time efficient ways to replenish the liquid plasma source material in the droplet generator reservoir as that is being depleted by the ongoing droplet formation and the limits of a finite space in the droplet generator reservoir and the issues with overly large volume reservoirs that are noted herein, without having to perform certain potentially contaminating
- on line or “at temperature” are considered to be any state where the liquid/molten state of the plasma source material at least in the plasma source material droplet generator reservoir (and concomitantly the liquid discharge portion of the droplet generator) is desirable and/or necessary.
- the transfer mechanism may comprise a conduit interconnecting the supply system reservoir and the droplet generator plasma source material reservoir.
- the transfer mechanism may comprise a valve isolating the supply reservoir from the droplet generator plasma source material reservoir, which may be a simple as a heating/cooling mechanism to solidify plasma source material in a transfer tube to stop flow and liquify it to allow flow, or other forms of valves, e.g., typically remotely operated, e.g., by a solenoid to permit or block flow.
- the supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form.
- the transfer mechanism may comprise a heater mechanism operative to apply heat primarily to a surface of the solid form of the plasma source material.
- the transfer mechanism may comprise a heat actuated valve between the supply reservoir and the droplet generator plasma source material reservoir.
- the apparatus and method may comprise a displaced heater mechanism disposed above a molten material gathering region of the supply reservoir operative to apply heat to a solid form of the plasma source material in the vicinity of the displaced heater mechanism, e.g., a meshed
- 2005-0017-02 19 screen that can be heated under remote control to melt solid plasma source material in contact with the heater.
- the apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is at temperature; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature, a discharge end of the transfer mechanism positioned below the upper surface of the droplet generator plasma source material in the droplet generator plasma source material reservoir during such transferring.
- the apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir displaced above the droplet generator plasma source material reservoir, in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is at temperature; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature and a liquid plasma source material handling controller maintaining a level of droplet generator plasma source material in the droplet generator plasma source reservoir based upon the sensing of the level of the droplet generator plasma source material in the droplet generator plasma source material reservoir and the sensing of a level of liquid plasma source material in the supply
- the apparatus and method may comprise the controller controlling a heating mechanism heating at least one surface of a solid form of the plasma source material in the supply reservoir prior to the transferring in response to a sensing of the level of liquid plasma source material in the supply reservoir.
- the apparatus and method may comprise the controller controlling the heating of at least one surface of a solid form of plasma source material in the supply reservoir after the transferring responsive to the sensing of a level of liquid plasma source material in the supply reservoir.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, comprising the steps of: utilizing an initial
- the method and apparatus may comprise subjecting plasma source material handling system component surfaces in contact with the plasma source material to a passivation process.
- the passivation material may comprise an acid bath to leech out materials through the component surfaces reactive with molten plasma source material.
- the method and apparatus may comprise choosing materials for surfaces wetted by the liquid plasma source material to substantially limit the formation of intermetallic compounds by the wetted surface material and the liquid plasma source material, such that blockage by such contaminants and/or precipitates and the like do not substantially block or clog narrow portions of the system over an operationally acceptable period of time between system maintenance such a cleaning and flushing.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: utilizing an inline filter intermediate the plasma source material supply system and the droplet generator plasma source material reservoir to prevent contaminants in the plasma source material reservoir from reaching the droplet generator plasma source material reservoir.
- the method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a
- 2005-0017-02 22 droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: maintaining temperatures in at least one selected portion of the material handling system so as to avoid thermal gradients within the at least one selected portion sufficient to cause solubility differences sufficient to precipitate out insoluble compounds as particulate, as will be understood by those skilled in the art based on the materials involved.
- the method and apparatus may comprise maintaining at least one selected portion of the material handling system downstream of a valve in the transfer mechanism at an elevated temperature sufficient to avoid blockage of at lest one narrowed passage portion of the at least one selected portion.
- the at least one selected portion is selected from the capillary, a nozzle at the discharge end of the capillary and an output orifice in the nozzle.
- the method and apparatus may comprise an EUV light source plasma source material handling system which may comprise: a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form as will be understood by those skilled in the art; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator at temperature; a storage mechanism storing plasma source material in a solid form within the droplet generator plasma source material supply system to replenish the plasma source material in the molten portion of the supply system reservoir.
- the method and apparatus may comprise a porous separator, e.g., a wire mesh, separating a solid form storage portion of the plasma source material supply system reservoir from the molten plasma source material supply system reservoir; a heating
- the method and apparatus may comprise a hopper in the plasma source material supply system reservoir containing plasma source material in a solid dispensable form comprising a remotely operated dispensing mechanism delivering a selected quantity of the solid dispensable plasma source material to the molten plasma material portion of the plasma source material supply system reservoir.
- the dispensable form may comprise a pellet form or a powder form or other forms of solid that can be made to flow out of the hopper, e.g., under gravity force, when the door is opened.
- the apparatus and method may comprise a holding mechanism holding the solid form plasma source material separate from the molten portion of the plasma source material supply system reservoir; a segmented heating mechanism selectively heating a selected segment of the solid form plasma source material in the plasma source material supply system reservoir to replenish the liquid form plasma source material in the molten portion of the plasma source material supply system reservoir.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/067,124 US7405416B2 (en) | 2005-02-25 | 2005-02-25 | Method and apparatus for EUV plasma source target delivery |
US11/088,475 US7122816B2 (en) | 2005-02-25 | 2005-03-23 | Method and apparatus for EUV light source target material handling |
PCT/US2006/005541 WO2006093687A1 (en) | 2005-02-25 | 2006-02-17 | Method and apparatus for euv light source target material handling |
Publications (3)
Publication Number | Publication Date |
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EP1854121A1 true EP1854121A1 (en) | 2007-11-14 |
EP1854121A4 EP1854121A4 (en) | 2011-07-06 |
EP1854121B1 EP1854121B1 (en) | 2013-05-29 |
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Application Number | Title | Priority Date | Filing Date |
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EP06720828.0A Expired - Fee Related EP1854121B1 (en) | 2005-02-25 | 2006-02-17 | Method and apparatus for euv light source target material handling |
Country Status (3)
Country | Link |
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EP (1) | EP1854121B1 (en) |
KR (1) | KR101177707B1 (en) |
WO (1) | WO2006093687A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022199959A1 (en) * | 2021-03-25 | 2022-09-29 | Asml Netherlands B.V. | Connection assembly |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193014A (en) * | 2007-02-08 | 2008-08-21 | Komatsu Ltd | Apparatus and system for supplying target material for lpp-type euv light source apparatus |
JP5149520B2 (en) * | 2007-03-08 | 2013-02-20 | ギガフォトン株式会社 | Extreme ultraviolet light source device |
KR101549412B1 (en) * | 2008-07-07 | 2015-09-02 | 코닌클리케 필립스 엔.브이. | Extreme uv radiation generating device comprising a corrosion-resistant material |
DE102009020776B4 (en) * | 2009-05-08 | 2011-07-28 | XTREME technologies GmbH, 37077 | Arrangement for the continuous production of liquid tin as emitter material in EUV radiation sources |
US9307625B2 (en) | 2011-04-05 | 2016-04-05 | Eth Zurich | Droplet dispensing device and light source comprising such a droplet dispensing device |
JP2014531705A (en) * | 2011-09-02 | 2014-11-27 | エーエスエムエル ネザーランズ ビー.ブイ. | Radiation source, method for lithographic apparatus, and device manufacturing method |
US9318311B2 (en) | 2011-10-11 | 2016-04-19 | Kla-Tencor Corporation | Plasma cell for laser-sustained plasma light source |
KR101416267B1 (en) * | 2012-03-20 | 2014-07-08 | 주식회사 에프에스티 | Induced plasma for EUV light generated gas cell |
WO2013141578A1 (en) * | 2012-03-20 | 2013-09-26 | 주식회사 에프에스티 | Apparatus for generating extreme ultraviolet light using plasma |
US9699876B2 (en) * | 2013-03-14 | 2017-07-04 | Asml Netherlands, B.V. | Method of and apparatus for supply and recovery of target material |
WO2016001973A1 (en) | 2014-06-30 | 2016-01-07 | ギガフォトン株式会社 | Target supply device, target material refining method, target material refining program, recording medium having target material refining program recorded therein, and target generator |
CN104934278B (en) * | 2015-04-29 | 2017-06-23 | 中国科学院长春光学精密机械与物理研究所 | The efficient cooling means of liquid metal and device of EUV light source sparking electrode |
JP6940529B2 (en) * | 2016-07-25 | 2021-09-29 | エーエスエムエル ネザーランズ ビー.ブイ. | Debris reduction system, radiation source and lithography equipment |
WO2019092831A1 (en) | 2017-11-09 | 2019-05-16 | ギガフォトン株式会社 | Extreme ultraviolet light generation device and method for manufacturing electronic device |
WO2022189088A1 (en) * | 2021-03-09 | 2022-09-15 | Asml Netherlands B.V. | Target material transfer system components and methods of making the same |
WO2023128856A1 (en) * | 2021-12-29 | 2023-07-06 | Innovicum Technology Ab | Particle based x-ray source |
US11882642B2 (en) | 2021-12-29 | 2024-01-23 | Innovicum Technology Ab | Particle based X-ray source |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723262A (en) * | 1984-12-26 | 1988-02-02 | Kabushiki Kaisha Toshiba | Apparatus for producing soft X-rays using a high energy laser beam |
WO2001049087A1 (en) * | 1999-12-24 | 2001-07-05 | Koninklijke Philips Electronics N.V. | Method of generating euv radiation, method of manufacturing a device by means of said radiation, euv radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
US20040105082A1 (en) * | 2002-09-19 | 2004-06-03 | Asml Netherlands B. V. | Radiation source, lithographic apparatus and device manufacturing method |
WO2004056158A2 (en) * | 2002-12-13 | 2004-07-01 | Forschungsverbund Berlin E.V. | Device and method for the creation of droplet targets |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2799667B1 (en) * | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | METHOD AND DEVICE FOR GENERATING A DENSE FOG OF MICROMETRIC AND SUBMICROMETRIC DROPLETS, APPLICATION TO THE GENERATION OF LIGHT IN EXTREME ULTRAVIOLET IN PARTICULAR FOR LITHOGRAPHY |
TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
-
2006
- 2006-02-17 WO PCT/US2006/005541 patent/WO2006093687A1/en active Application Filing
- 2006-02-17 KR KR1020077021873A patent/KR101177707B1/en active IP Right Grant
- 2006-02-17 EP EP06720828.0A patent/EP1854121B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723262A (en) * | 1984-12-26 | 1988-02-02 | Kabushiki Kaisha Toshiba | Apparatus for producing soft X-rays using a high energy laser beam |
WO2001049087A1 (en) * | 1999-12-24 | 2001-07-05 | Koninklijke Philips Electronics N.V. | Method of generating euv radiation, method of manufacturing a device by means of said radiation, euv radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
US20040105082A1 (en) * | 2002-09-19 | 2004-06-03 | Asml Netherlands B. V. | Radiation source, lithographic apparatus and device manufacturing method |
WO2004056158A2 (en) * | 2002-12-13 | 2004-07-01 | Forschungsverbund Berlin E.V. | Device and method for the creation of droplet targets |
Non-Patent Citations (1)
Title |
---|
See also references of WO2006093687A1 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022199959A1 (en) * | 2021-03-25 | 2022-09-29 | Asml Netherlands B.V. | Connection assembly |
Also Published As
Publication number | Publication date |
---|---|
EP1854121A4 (en) | 2011-07-06 |
KR20070110891A (en) | 2007-11-20 |
KR101177707B1 (en) | 2012-08-29 |
WO2006093687A1 (en) | 2006-09-08 |
EP1854121B1 (en) | 2013-05-29 |
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