EP1540762A1 - Junction between a microstrip line and a waveguide - Google Patents

Junction between a microstrip line and a waveguide

Info

Publication number
EP1540762A1
EP1540762A1 EP20030798047 EP03798047A EP1540762A1 EP 1540762 A1 EP1540762 A1 EP 1540762A1 EP 20030798047 EP20030798047 EP 20030798047 EP 03798047 A EP03798047 A EP 03798047A EP 1540762 A1 EP1540762 A1 EP 1540762A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
substrate
microstrip line
arrangement according
characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20030798047
Other languages
German (de)
French (fr)
Other versions
EP1540762B1 (en
Inventor
Thomas Johannes MÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE2002143671 priority Critical patent/DE10243671B3/en
Priority to DE10243671 priority
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Priority to PCT/DE2003/002553 priority patent/WO2004030142A1/en
Publication of EP1540762A1 publication Critical patent/EP1540762A1/en
Application granted granted Critical
Publication of EP1540762B1 publication Critical patent/EP1540762B1/en
Application status is Expired - Fee Related legal-status Critical
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
    • H01P5/107Hollow-waveguide/strip-line transitions

Abstract

The invention relates to a configuration for a junction between a microstrip line and a waveguide, comprising: a microstrip line (ML), which is placed on the top side of a dielectric substrate (S); a waveguide, which is placed on the top side of the substrate (S) and which has an opening (OB) on at least one face and on a step-like structure (ST) provided on a lateral wall in the vicinity of the opening (OB) while, in at least one part (ST1), being conductively connected to the microstrip line (ML), whereby a lateral wall of the waveguide is a metallized layer (LS) provided on the substrate (S); a recess (A), which is made in the metallized layer (LS) and into which the microstrip line (ML) protrudes; a rear side metallization (RM) provided on the rear side of the substrate (S), and; electrically conductive through connections (VH) between the metallized layer (LS) on the top side of the substrate (S) and the rear side metallization (RM) that surround the recess (A).

Description

TRANSITIONAL BETWEEN A MICRO STRIPLINE AND A WAVEGUIDE.

The invention relates to an arrangement according to patent claim. 1

In many applications, the high-frequency technology, in particular in the millimeter-wave technology, it is necessary to couple a guided in a microstrip line wave in a waveguide and vice versa. Here, a reflection-free transition and loss-desired. This transition ensures within a limited frequency range that the impedances between the waveguide and the strip line are adapted to each other and that the field image of a waveguide type is converted into the field image of the other waveguide type.

Microstrip line-waveguide transitions are known for example from DE 197 41 944 A1 or US 6,265,950 B1.

In DE 197 41 944 A1 an arrangement (Fig. 1) is described in which the microstrip line is applied to the upper surface of the substrate. The waveguide HL is mounted with an end face at the bottom of the substrate S. The substrate S has in the region of the waveguide HL on a breakthrough D which substantially corresponds to the cross section of the waveguide HL. At the microstrip line ML is a coupling element (not shown), which protrudes into the aperture D. The aperture D is on top of the substrate S surrounded by a shield cap SK, which by means of electrically conductive drilled holes (via holes) with VH is existing on the bottom of the substrate S RM metallization electrically connected.

This arrangement has the disadvantage that the printed circuit board must be conductively mounted on a pre-processed, comprising holding the waveguide HL carrier plate. In addition, a high-precision, mechanically precisely positioned and conductive aufzubrin- constricting canopy SK is necessary. The preparation of this arrangement is time-consuming due to the large number of different types of processing steps and expensive. Other disadvantages result from the large space requirements due to the disposed outside the conductor plate waveguide.

In the described in US 6,265,950 B1 arrangement for a transition between a microstrip line and a waveguide, the substrate having applied thereto the microstrip line in the waveguide extends into. A disadvantage of this arrangement is the integration of the waveguide into a printed circuit board environment. The waveguide may be only at the boundary surfaces of the printed circuit board (substrate) is arranged. An integration of the waveguide within the printed circuit card is not possible for reasons of cost-intensive preparation of the board.

It is an object of the invention to provide an arrangement for a transition between a microstrip line and a waveguide, which is simple and inexpensive to implement and requires little space.

This object is achieved by the arrangement having the features according to patent claim. 1 Advantageous embodiments of the arrangement are the subject of subclaims.

The inventive arrangement for a transition between a microstrip line and a waveguide comprises - a force applied on the upper surface of a dielectric substrate microstrip line, - an applied on top of the substrate the waveguide having an opening at at least one end face and an application running in the region of the opening on a side wall step-like structure which is conductively connected in at least one part with the microstrip line, and wherein a side wall of the waveguide is performed on the substrate metallized layer, - a recess running in the metallized layer, into which projects the microstrip line,

- an application running on the backside of the substrate Ruckseitenmetallisierung,

- electrically conductive vias between the metallized layer on top of the substrate and the Ruckseitenmetallisierung surrounding the initial savings.

An advantage of the arrangement according to the invention is the simple and inexpensive manufacture of the microstrip-waveguide junction. In order to realize the transition fewer components are needed, in contrast to the prior art. Another advantage is that the implementation of the waveguide does not have to take place as US 6,265,950 on the edge of the circuit board in the printed circuit board environment, but that it may take place at any location on the circuit board. The arrangement according to the invention has a low space requirement.

the waveguide is advantageously a SMD (surface mount device) component. The waveguide part is to put in a simple assembly step from the top of the circuit board and conductively connected. The connection of the waveguide to the transition can be integrated into known mounting method. In this way, manufacturing steps are saved, thereby reducing the manufacturing cost and time are reduced. The invention and further advantageous embodiments of the inventive arrangement will be explained in more detail below with reference to drawings. Show it:

Fig. 1 shows a longitudinal section through an arrangement for a microstrip, waveguide transition according to the prior art,

Fig. 2 is a plan view of the metallized layer on top of the substrate, Fig. 3 is a perspective view of an exemplary step-like internal structure of the SMD component,

Fig. 4 shows a longitudinal section through an inventive arrangement for a micro krostreifen-waveguide transition,

Fig. 5 is a first cross section through the area 3 in Fig. 4, Fig. 6 shows a second cross section through the region 4 in Fig. 4,

Fig. 7 shows a third cross section through the region 5 in Fig. 4,

Fig. 8 shows a fourth cross section through the region 6 in Fig. 4.

Fig. 9 shows a further advantageous embodiment of the invention Mikrost- mature-waveguide transition.

Fig. 2 shows in plan view the metallized layer of the substrate. This metallized layer is also referred to as a landing structure for the microstrip-waveguide junction. The land structure LS has a recess with an opening A OZ. Through this opening, OZ, the microstrip line ML which terminates within the recess A passes. The recess is surrounded by vias A VH, also referred to as via holes. These plated-through holes VH are electrically conductive apertures in the substrate, which connects the land structure LS with the running on the backside of the substrate Ruckseitenmetallisierung (not shown). The distance between the via holes VH is so narrow that selected within the useful frequency range of the radiation of the electromagnetic wave is low through the interstices. The via holes VH possibility for encryption of the radiation ringerung advantageously extend in a plurality of mutually parallel rows.

Fig. 3 shows a perspective view of an exemplary step-like internal structure of the SMD component. The component B also comprises according to the opening of the recess in the land structure (see. Fig. 2) an opening OB. In the longitudinal direction of the component a step-like structure ST1, ST is formed at a predeterminable distance from the opening OB on the side wall. The step structure ST1 and ST-containing side wall of the component B is located after the assembly of the land structure LS against the substrate surface (see. Fig. 4). The applied waveguide component B is open prior to assembly downward (toward the substrate) and thereby still incomplete. The missing side wall is formed by the application running on the substrate land structure LS.

The arrangement according to the invention is also not limited by the number of stages shown in Fig. 3 or Fig. 4. The structure ST can be adapted to the respective requirements of the transition with respect to number of stages, length and width of the individual stages. It is of course also possible to realize a continuous transition.

In the illustration shown, the direction indicated by the reference numeral ST1 stage has a height such that with the positive application of the component B to the land structure in accordance with Fig. 2, the stage ST1 rests directly on the microstrip line ML and thus an electrically conductive connection between the microstrip line ML and the component B prepared.

Fig. 4 shows in longitudinal section an inventive arrangement of a microstrip waveguide transition. In this case the component B of FIG. 3 is applied a form fit to the land structure of the substrate S as shown in FIG. 3. The component B is, in particular, in such a way applied to the substrate that B creates an electrically conductive connection between the land structure and the component.

On the underside, the substrate S in a substantially continuous metallic coating RM. The waveguide region is indicated in the diagram by reference numeral HB. The transition region is identified by the reference numeral OA.

The microstrip waveguide transition according to the invention works as follows:

The high frequency signal outside the waveguide HL is passed through a microstrip line ML with the impedance Z 0 (region 1). The high frequency signal in-nerhalb the waveguide HL is performed in the form of 0 -Hohlleitergrundmode TEι. The transition ÜB converts the image field of the microstrip mode to gradually into the image field of the waveguide mode. At the same time the transition recommendation by the gradations of the component B acts with respect to the characteristic impedance transforming and provides the useful frequency range for impedance matching Zo the impedance of the waveguide HL ZHL. This enables a loss and low-reflection transition between the two waveguides.

The microstrip line ML first leads into the area 2 of a so-called cut-off channel. This channel is formed from the component B, the Rückseitenmetalli- tion RM and the via holes VH, which B is a conductive connection between the component and provide Ruckseitenmetallisierung RM. The width of the cut-off channel is selected such that in this area 2 than the signal carrying microstrip mode no additional shaft type is capable of propagation. The length of the channel determines the damping of the undesired not propagate waveguide mode and prevents a radiation in the free space (area 1). In region 3, the microstrip line ML is in a type of partially waveguide. The waveguide is formed from the component B, the Ruckseitenmetallisierung RM and the via holes VH (Fig. 5). In the field 4, the step-shaped structure of the

Component B is connected to the microstrip line ML (Fig. 6). The side walls of the component B are conductively connected by a so-called shield row of via holes VH with the Ruckseitenmetallisierung RM of the substrate S. Thus, a dielectric-loaded ridge waveguide is formed. The signal energy is concentrated between the Ruckseitenmetallisierung RM and the web formed from the microstrip line ML and the step ST1 of the component B.

Compared to area 4, the height of the step structure ST contained in the component B decreases in the category 5, so that during the form-locking assembly of the component B to the land structure LS on the substrate S, a defined air gap L between the substrate material and the stepped structure ST is formed (Fig. 7). The side walls of the component B are conductively connected through via-Hoies VH with the Ruckseitenmetallisierung RM. Thus, a partially filled dielectric-loaded ridge waveguide is formed.

The width of the step extends around the field image from field 4 gradually align to the image field of the waveguide mode (region 6). The length, width and height of the steps are such that the impedance of the microstrip mode Z 0 is transformed to the impedance of the waveguide mode ZHL at the end of region 6 so selected. If necessary the number of stages can also be increased in the range 5 or a continuous web getaperter be used in the structure of the component B.

6 shows the range waveguide region HB. The component B forming the side walls and the lid of the waveguide HL. The waveguide bottom is formed by the land structure LS on the substrate S, that is compared to zone 5 now no dielectric filling the waveguide HL. One or more transverse to the propagation direction of the guided wave shielding rows of via holes VH in the transition region between the region 5 and Be

6 rich realize the transition between the partially dielectric-filled waveguide and the purely air-filled waveguide. At the same time, the coupling of the signal between the land structure LS and the Rückseitenme- metallization is prevented by this screen rows.

In region 6, a stepped structure can optionally be present (to the stepped structure in the range 5 analog) in the cap top. The length and height of these stages is analogous to selected area 5 so that in combination with the other areas, the impedance of the microstrip mode Z is transformed to the present at the end of region 6 ZHL impedance of the waveguide mode 0th

In Fig. 9, a further advantageous embodiment of the microstrip-waveguide junction according to the invention. With this embodiment, it is possible to realize a simple and inexpensive waveguide transition, wherein said high-frequency signal to pass through the substrate S downwardly through the substrate contained in the continuous waveguide opening DB can be coupled. The waveguide opening DB advantageously has electrically conductive inner walls (IW). The component B has advantageously in the range of the opening DB on which the waveguide opening DB opposite side wall of a step shape on ST. With this step form the ST waveguide wave is deflected by 90 ° from the waveguide area HB of the component B in the waveguide opening DB of the substrate S. On the underside of the substrate S in the region of the waveguide opening DB, for example, a further waveguide or radiating element may be disposed. In the present example in Fig. 9, a further support material TP, for example, a mono- to multi-layer circuit board or a metal support is attached to the Ruckseitenmetallisierung RM. The advantage of this arrangement in comparison to DE 197 41 944 A1 in the simplified and cost effective design of the substrate S and the support material TP. The waveguide opening is cut continuously and the inner walls metallized by electroplating. Both

Dardverfahren steps are conventional, easily performed in standard printed circuit board technology.

Claims

claims
1. Arrangement for a junction between a microstrip line and a waveguide, comprising
- one on top of a dielectric substrate (S) applied microstrip line (ML),
- one on top of the substrate (S) coated waveguide with an opening (OB) carried out on at least one end surface and a region of the opening (OB) on a sidewall of the stepped structure (ST) which in at least one part (ST1) with the microstrip line (ML) is conductive and wherein a side wall of the waveguide a on the substrate (S) executed metallized layer (LS) is - recess a in the metallized layer (LS) executed (a), in which the
Microstrip line (ML) protrudes,
- a Ruckseitenmetallisierung on the backside of the substrate (S) executed (RM),
- electrically conductive vias (VH) between the metallized layer (LS) on the upper surface of the substrate (S) and the Ruckseitenmetallisierung (RM), which surround the recess (A).
2. Arrangement according to claim 1, characterized in that the hollow conductor (B) is an SMD component.
3. Arrangement according to claim 1 or 2, characterized in that the study programs fenförmige structure (ST) is performed on the recess (A) opposite side wall of the hollow pus (B).
4. Arrangement according to one of the preceding claims, characterized in that the distance of the vias (VH) to each other is selected so-that the emission of the electromagnetic wave in the usable frequency is low through the clearances and the function of the transition thus not due to increased losses or unwanted couplings is impaired.
5. An arrangement according to claim 4, characterized in that the via holes (VH) run in several mutually parallel rows.
6. Arrangement according to one of the preceding claims, characterized in that the substrate (S) in the area of ​​the metallized layer (LS) on the upper surface of the substrate (S) has a waveguide opening (DB) has.
7. An arrangement according to claim 5, characterized in that the inner surface of the waveguide opening (DB) is electrically conductive.
8. An arrangement according to claim 5 or 6, characterized in that the opposing top of the substrate side wall of the waveguide (B) in the area of ​​the waveguide opening (DB) comprises a stepped structure (ST) having.
EP20030798047 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide Expired - Fee Related EP1540762B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE2002143671 DE10243671B3 (en) 2002-09-20 2002-09-20 Arrangement for transition between microstrip conductor, hollow conductor has one hollow conductor side wall as metallised coating on substrate with opening into which microstrip conductor protrudes
DE10243671 2002-09-20
PCT/DE2003/002553 WO2004030142A1 (en) 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide

Publications (2)

Publication Number Publication Date
EP1540762A1 true EP1540762A1 (en) 2005-06-15
EP1540762B1 EP1540762B1 (en) 2008-08-27

Family

ID=31896216

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20030798047 Expired - Fee Related EP1540762B1 (en) 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide

Country Status (15)

Country Link
US (1) US7336141B2 (en)
EP (1) EP1540762B1 (en)
JP (1) JP4145876B2 (en)
KR (1) KR100958790B1 (en)
CN (1) CN100391045C (en)
AT (1) AT406672T (en)
AU (1) AU2003257396B2 (en)
BR (1) BR0306449A (en)
CA (1) CA2499585C (en)
DE (2) DE10243671B3 (en)
ES (1) ES2312850T3 (en)
IL (1) IL167325A (en)
NO (1) NO20041694L (en)
PL (1) PL207180B1 (en)
WO (1) WO2004030142A1 (en)

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US7752911B2 (en) 2005-11-14 2010-07-13 Vega Grieshaber Kg Waveguide transition for a fill level radar
WO2008069714A1 (en) 2006-12-05 2008-06-12 Telefonaktiebolaget Lm Ericsson (Publ) A surface-mountable waveguide arrangement
AT504957T (en) * 2007-11-30 2011-04-15 Ericsson Telefon Ab L M Transition of micro strips to wave leader
EP2224535B1 (en) * 2007-12-28 2013-12-18 Kyocera Corporation High-frequency transmission line connection structure, wiring substrate, high-frequency module, and radar device
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KR101858585B1 (en) 2018-03-15 2018-05-16 엘아이지넥스원 주식회사 Apparatus for combining power in millimeter wave system

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Also Published As

Publication number Publication date
CA2499585A1 (en) 2004-04-08
AU2003257396A1 (en) 2004-04-19
CA2499585C (en) 2011-02-15
AU2003257396B2 (en) 2008-09-25
JP2005539461A (en) 2005-12-22
WO2004030142A1 (en) 2004-04-08
PL207180B1 (en) 2010-11-30
US20060145777A1 (en) 2006-07-06
DE10243671B3 (en) 2004-03-25
BR0306449A (en) 2004-10-26
PL374171A1 (en) 2005-10-03
DE50310414D1 (en) 2008-10-09
CN1682404A (en) 2005-10-12
US7336141B2 (en) 2008-02-26
EP1540762B1 (en) 2008-08-27
IL167325A (en) 2010-04-15
NO20041694L (en) 2004-04-27
KR100958790B1 (en) 2010-05-18
KR20050057509A (en) 2005-06-16
AT406672T (en) 2008-09-15
ES2312850T3 (en) 2009-03-01
JP4145876B2 (en) 2008-09-03
CN100391045C (en) 2008-05-28

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