EP1472727A2 - Composant semi-conducteur presentant une surface de capteur ou d'actionneur et procede pour le produire - Google Patents

Composant semi-conducteur presentant une surface de capteur ou d'actionneur et procede pour le produire

Info

Publication number
EP1472727A2
EP1472727A2 EP03706288A EP03706288A EP1472727A2 EP 1472727 A2 EP1472727 A2 EP 1472727A2 EP 03706288 A EP03706288 A EP 03706288A EP 03706288 A EP03706288 A EP 03706288A EP 1472727 A2 EP1472727 A2 EP 1472727A2
Authority
EP
European Patent Office
Prior art keywords
active
semiconductor component
chip
metal frame
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03706288A
Other languages
German (de)
English (en)
Inventor
Horst Theuss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1472727A2 publication Critical patent/EP1472727A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24—Housings ; Casings for instruments
    • G01D11/245—Housings for sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the invention relates to a semiconductor component with a sensor or actuator surface for and a method for its production.
  • a further advantage of semiconductor sensors lies in their easy integration into a circuit periphery, which can be located on the same semiconductor substrate and with which the sensor can be connected.
  • sensors for example for temperature or for the detection of certain gases, may also require an exposed sensor surface.
  • optical sensors of all kinds which can be used as transmitters and receivers.
  • the optically effective sensor or actuator surfaces of laser components, LEDs and cameras must enable unimpeded signal coupling and decoupling. Regardless of this, high demands are placed on reliability and especially on mechanical robustness of such semiconductor devices.
  • leadframe technology in which a cavity is provided for the semiconductor chip, is suitable for the implementation of sensor housings.
  • Examples of this are so-called “pre-packaged packages with a lid or a structure made up of several parts that are joined together during assembly to form a cavity.
  • pre-packaged packages with a lid or a structure made up of several parts that are joined together during assembly to form a cavity.
  • optical housings the design of the component must allow the exact coupling of an optical signal line, for example an optical fiber line.
  • relatively complex plug connections are often provided outside the component housing or, if appropriate, also coupling / plug devices in the housing.
  • Semiconductor components with a pressure sensor are, for example, from JP 2001 004 473 A, from US 622 91 90 B1, from JP 2000 249 611 A, from DE 196 26 082 AI, from JP 2000 214 034 A and from WO 00/42405 AI known.
  • Semiconductor components with an optical sensor and with devices for coupling or decoupling optical signals are, for example, from JP 2001 083 370 A, from US 622 77 24 B1, from JP 2001 053 332 A, from JP 2001 033 666 A and known from EP 108 63 92 AI.
  • an electronic semiconductor component has a semiconductor chip which has at least one active chip area functioning as a sensor surface and / or as an actuator surface on an active front side. According to the invention, this active chip area is enclosed by a raised metal frame. Furthermore, the semiconductor chip has contact areas on its active front side, which are grouped around the metal frame. A plastic housing of the semiconductor component has a cutout for the active chip area within the metal frame and leaves it free.
  • This electronic semiconductor component enables simple signal coupling or decoupling onto a sensor or actuator surface of the semiconductor chip through the recess in the plastic housing.
  • the housing can be provided with a suitable coupling point, for example for connection to optical fibers or the like.
  • the metal frame has an annular shape with a rectangular cross section.
  • a ring can preferably be electrodeposited and can in particular be produced using the same technology that is already available for the electrodeposition of contact bumps, so-called Bu ps, for flip-chip contacting of the semiconductor chip. If the semiconductor chip is designed as a flip chip, the metal frame or the flip chip contacts (balls, bumps) can be produced simultaneously by means of a corresponding mask design.
  • An alternative method of applying the metal frame and / or the bumps is to apply them using screen printing techniques. It is also possible to first produce the metal frame and then apply it to the active front side of the semiconductor chip. Preferably, an upper side of the metal frame is flush with a surface of a plastic housing.
  • the main material used for the housing is plastic molding compound, which is processed using the transfer molding process.
  • the semiconductor component is clad with the plastic molding compound and thus shielded and encapsulated against mechanical influences and against adverse media influences.
  • a further embodiment of the electronic semiconductor component according to the invention provides that the active front of the semiconductor chip is mounted in flip-chip technology on a carrier substrate which has a coupling point for sensor signals and a coupling point for actuator signals.
  • this coupling or decoupling point can be a recess in the carrier substrate, which is located directly below the active chip area and thus enables an unimpeded signal run.
  • a galvanically applied ring or metal frame can be used directly for contacting when using flipchip technology, i.e. for example for soldering to a printed circuit board. This ensures a hermetically sealed seal to the carrier substrate or to the printed circuit board and also protects the other chip surfaces against environmental influences.
  • An alternative embodiment of the invention provides that the semiconductor chip is mounted with its passive rear side on a carrier substrate which has contact connection areas which are in electrically conductive connection with the contact areas on the active front side of the semiconductor chip by means of wire bond connections.
  • This embodiment according to the invention can be produced simply and inexpensively. provide, whereby the known wire bond technology can be used.
  • an optically sensitive area can be considered as the active chip area, so that this is an optical sensor.
  • This optically sensitive surface can either comprise a single optical component such as a phototransistor or a photodiode.
  • the active chip area can comprise an optically active surface area which can emit optical signals - for example in the form of laser beams.
  • the active chip area can comprise an area sensitive to pressure or sound vibrations. It can also include a temperature or gas sensitive surface. Such a gas sensor can react sensitively to individual specific gases or to gas mixtures.
  • a method according to the invention for producing an electronic semiconductor component with a semiconductor chip which has at least one active chip area functioning as a sensor and / or an actuator surface on the active front side comprises at least the following steps:
  • Such a method can be carried out in a simple and inexpensive manner and enables the inexpensive production of very universally usable sensor or actuator components which are based on semiconductor chips.
  • a usable package at the wafer level is available as soon as the ring coupling and the electrical contacts have been attached.
  • this can be encapsulated by a plastic covering or other housing.
  • the metal frame is applied to the active front side of the semiconductor chip by galvanic means. This procedure can be carried out easily and inexpensively and delivers reliable results.
  • the metal frame can advantageously be produced in a common process step together with contact bumps, which are likewise applied to the contact surfaces of the semiconductor chip by galvanic means. In this way, the manufacturing process for the semiconductor components can be further optimized.
  • the bumps and the metal frame are preferably approximately of the same height, so that the semiconductor chip can be easily mounted on a front side of the carrier substrate, the metal frame being firmly connected to the latter and providing a seal.
  • the electrical connections can also be produced using conventional wire bonding technology, which is easy and inexpensive to implement.
  • Figure 1 shows a semiconductor chip in a schematic perspective view.
  • FIG. 2 shows a first variant of an electronic semiconductor component according to the invention in a schematic perspective illustration.
  • FIG. 3 shows a further variant of the electronic semiconductor component according to the invention in a schematic perspective illustration.
  • FIG. 4 shows the semiconductor chip of the semiconductor component in a schematic sectional illustration.
  • FIG. 5 shows the electronic semiconductor component mounted on a carrier in a schematic sectional illustration.
  • FIG. 6 shows a further alternative embodiment of the electronic semiconductor component in a schematic perspective view.
  • FIG. 7 shows the electronic semiconductor component according to FIG. 6 in a schematic sectional illustration.
  • FIG. 1 shows a semiconductor chip 4 in a schematic perspective illustration.
  • the semiconductor chip 4 has an active front side 41 with contact areas 43, on which contact bumps AG r so-called bumps are applied in each case in the illustration shown.
  • An active chip area 47 is also provided on the active front side 41 of the semiconductor chip 4 and is arranged in a central region of the active front side 41.
  • the active chip area 47 can function as a sensor and / or as an actuator area.
  • the sensor can be an opti- shear sensor, a pressure, a sound, a temperature or a gas sensor.
  • An optical or acoustic transmitter can be used as an actuator, for example.
  • the active chip area 47 is surrounded by a metal frame 45 which, in the exemplary embodiment shown, has a ring shape and projects above the active front side 41 of the semiconductor chip 4.
  • the metal frame 45 preferably has approximately the height of the contact bumps 46, which facilitates its mounting on a carrier substrate or on a printed circuit board (see FIG. 2 ff.).
  • FIG. 2 shows a schematic perspective illustration of a first variant of an electronic semiconductor component 2 according to the invention, which comprises a semiconductor chip 4 according to FIG. 1 and a flat carrier substrate 6, on which the semiconductor chip 4 is placed and mounted.
  • the flat carrier substrate 6 has a first surface 61 on which the semiconductor chip 4 is mounted with its active front side 41 in so-called flip-chip technology.
  • the contact bumps 46 are applied to corresponding contact connection surfaces 66 (not shown) on the first surface 61 of the carrier substrate 6.
  • the metal frame 45 is placed on a correspondingly suitable ring contact 64, which frames a cutout 63 in the carrier substrate 6, which forms a coupling or decoupling point for sensor or actuator signals 12. These signals 12 are indicated by a double arrow within the recess 63, the direction of the arrow perpendicular to the active chip area 47 and the active front side 41 and the first surface 61 also defines the direction of the actuator or sensor signals 12.
  • the metal frame 45 is firmly connected to the ring contact 64, so that in the case of a finished semiconductor component 2 the entire active front side 41 of the semiconductor chip 4, with the exception of its active chip area 47, is hermetically sealed against signal and environmental influences.
  • the carrier substrate 6 can, for example. A conventional circuit board made of epoxy material or a ceramic carrier or the like. his.
  • a plastic housing 10, which encases at least the first surface 61 of the carrier substrate 6 and the semiconductor chip 4, is not shown here for the sake of clarity.
  • FIG. 3 shows an alternative embodiment of the electronic semiconductor component 2 in a perspective view, in which a deflection device 68 is provided in the carrier substrate 6 directly below the active chip surface 47 instead of a recess 63 leading vertically through the carrier substrate 6 directly below the active chip surface 47.
  • This deflection device 68 which can, for example, consist of a mirror system for reflecting optical signals, deflects the sensor or actuator signals 12 in the direction of a side surface of the carrier substrate 6.
  • This deflection can be desirable for a wide variety of reasons, for example in order to be able to implement a particularly flat semiconductor component 2 in which the coupling or decoupling point for sensor or actuator signals 12 is provided on one of its flat side edges.
  • the housing is not drawn for reasons of better clarity.
  • the remaining structure of the electronic semiconductor component 2 corresponds to that according to FIG. 2.
  • FIG. 4 shows the semiconductor chip 4 of the electronic semiconductor component according to the invention in a schematic sectional illustration.
  • a carrier substrate has not yet been applied; the finished semiconductor component is shown in FIG. 5.
  • the semiconductor chip 4 and the major parts of the contact bumps 46 are encased in a plastic housing 10.
  • Short sections of the approximately round contact bumps 46 protrude from the plastic housing 10, so that they can be placed on the contact connection surfaces of the carrier substrate using flip-chip technology and soldered to them by producing an electrically conductive connection.
  • FIG. 5 shows a schematic section of the electronic semiconductor component 2 corresponding to FIG. 4, which is applied to a carrier substrate 6.
  • the soldered connections of contact connection surfaces 66 of the carrier substrate 6 to the contact bumps 46 of the semiconductor chip 4 or to the metal frame 45, which rests on the ring contact 64 and is soldered to it, can be seen here.
  • the carrier substrate 6 has a cutout 63 which has approximately the same diameter as the inside of the metal frame 45 and enables an unimpeded coupling or uncoupling of sensor or actuator signals 12.
  • the plastic housing 10 can be manufactured before the component is placed on the carrier substrate 6. This is illustrated by the narrow distance between the underside 104 of the housing and the first surface 61 of the carrier substrate 6. However, it is also possible to produce the connection between the semiconductor chip 4 and the carrier substrate 6 and the subsequent pressing with a molding compound 101.
  • FIG. 6 shows a perspective schematic representation of an alternative embodiment of the electronic semiconductor Component 2.
  • the contact surfaces 43 of the semiconductor chip 4 are electrically conductively connected to the contact connection surfaces 66 of the carrier substrate 6 using conventional wire bonding technology.
  • the semiconductor chip 4 is applied with its passive rear side 42 to the first surface 61 of the carrier substrate 6, so that the active chip area 47 points away from the carrier substrate 6.
  • the plastic housing 10 borders to the outer edge of the metal frame 45 and leaves the active chip area 47 for unhindered coupling and uncoupling of the sensor or. Actuator signals 12 free.
  • the contact surfaces 43 of the semiconductor chip 4 are connected via wire bond connections 8 to contact connection surfaces 66 of the carrier substrate 6, which lead to external contacts 67.
  • a method according to the invention for producing an electronic semiconductor component 2 with a semiconductor chip 4 is illustrated with reference to FIGS. 1 to 7. At least the following steps are provided in the method.
  • a semiconductor chip 4 is provided with an active front side 41 and an active chip area 47 and contact areas 43 grouped around these and with a passive rear side 42.
  • Raised metal frame 45 is applied to active front 41. Electrical connections between the contact surfaces 43 of the semiconductor chip 4 and contact connection surfaces 66 of the semiconductor component 2 are produced.
  • a housing 10 of the semiconductor component 2 is applied while leaving external contacts 67 and leaving the active chip area 47 inside the metal frame 45.
  • the metal frame is preferably applied to the active front side 41 of the semiconductor chip 4 by galvanic means.
  • the metal frame 45 can be applied together with the bumps 46 in a common process step.
  • the semiconductor chip 4 can either be connected using flip-chip technology to a carrier substrate 6, in which case a recess 63 or a deflection device 68 must be provided for signal routing.
  • the semiconductor chip 4 can also be mounted using known wire bonding technology. In this case, only a corresponding sensor channel 102 must be provided in the plastic housing 10, which can be easiest produced by applying the molding compound 101 of the plastic housing 10 to the outer edge of the metal frame 45.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Light Receiving Elements (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

La présente invention concerne un composant électronique semi-conducteur comprenant une puce semi-conductrice (4) qui présente une surface de puce active (47) entourée par un cadre métallique en relief (45). Un boîtier en matière plastique (10) présente un évidement (63; 102) destiné à la surface de puce active (47) à l'intérieur du cadre métallique (45) et laissant cette surface libre. La présente invention concerne également un procédé pour produire ce composant électronique semi-conducteur.
EP03706288A 2002-02-07 2003-02-06 Composant semi-conducteur presentant une surface de capteur ou d'actionneur et procede pour le produire Withdrawn EP1472727A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10205127 2002-02-07
DE10205127A DE10205127A1 (de) 2002-02-07 2002-02-07 Halbleiterbauteil mit Sensor- bzw. Aktoroberfläche und Verfahren zu seiner Herstellung
PCT/DE2003/000334 WO2003067657A2 (fr) 2002-02-07 2003-02-06 Composant semi-conducteur presentant une surface de capteur ou d'actionneur et procede pour le produire

Publications (1)

Publication Number Publication Date
EP1472727A2 true EP1472727A2 (fr) 2004-11-03

Family

ID=27634795

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03706288A Withdrawn EP1472727A2 (fr) 2002-02-07 2003-02-06 Composant semi-conducteur presentant une surface de capteur ou d'actionneur et procede pour le produire

Country Status (4)

Country Link
US (1) US6987312B2 (fr)
EP (1) EP1472727A2 (fr)
DE (1) DE10205127A1 (fr)
WO (1) WO2003067657A2 (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497322B2 (en) * 1997-06-27 2002-12-24 The Procter & Gamble Company Non-aqueous detergent compositions containing bleach
DE10327694A1 (de) * 2003-06-20 2005-01-05 Robert Bosch Gmbh Optische Sensoranordnung und entsprechendes Herstellungsverfahren
DE102004003880B3 (de) * 2004-01-26 2005-07-21 Ingo Maurer Gmbh Fassadenverkleidung
DE102004041595A1 (de) 2004-04-30 2005-12-01 Markus Gruber Messzelle sowie Verfahren zum Herstellen einer Messzelle und Messvorrichtung zur Aufnahme einer derartigen Messzelle
DE102004027094A1 (de) * 2004-06-02 2005-12-29 Infineon Technologies Ag Halbleitermodul mit einem Halbleiter-Sensorchip und einem Kunststoffgehäuse sowie Verfahren zu dessen Herstellung
TWI251886B (en) * 2004-11-03 2006-03-21 Advanced Semiconductor Eng Sensor chip for defining molding exposed region and method for manufacturing the same
DE102005025754B4 (de) * 2005-06-02 2019-08-08 Infineon Technologies Ag Halbleitersensorbauteil mit einem Sensorchip und Verfahren zur Herstellung von Halbleitersensorbauteilen
DE102005034011B4 (de) * 2005-07-18 2009-05-20 Infineon Technologies Ag Halbleiterbauteil für Hochfrequenzen über 10 GHz und Verfahren zur Herstellung desselben
DE102005048396A1 (de) * 2005-10-10 2007-04-19 Siemens Ag Sensorbaugruppe
TWI289916B (en) * 2006-03-24 2007-11-11 Advanced Semiconductor Eng Chip package and package process thereof
DE102006038302A1 (de) * 2006-08-16 2008-02-21 Atmel Germany Gmbh Sensoreinheit und optischer Aufnehmer für eine Abtasteinrichtung
US7445959B2 (en) * 2006-08-25 2008-11-04 Infineon Technologies Ag Sensor module and method of manufacturing same
ITMI20070099A1 (it) 2007-01-24 2008-07-25 St Microelectronics Srl Dispositivo elettronico comprendente dispositivi sensori differenziali mems e substrati bucati
DE102007005630B4 (de) * 2007-02-05 2019-08-08 Infineon Technologies Ag Sensorchip-Modul und Verfahren zur Herstellung eines Sensorchip-Moduls
US7696013B2 (en) * 2007-04-19 2010-04-13 Eastman Kodak Company Connecting microsized devices using ablative films
US8559139B2 (en) 2007-12-14 2013-10-15 Intel Mobile Communications GmbH Sensor module and method for manufacturing a sensor module
US8080993B2 (en) * 2008-03-27 2011-12-20 Infineon Technologies Ag Sensor module with mold encapsulation for applying a bias magnetic field
WO2009121675A1 (fr) * 2008-04-03 2009-10-08 Dr. Johannes Heidenhain Gmbh Agencement de composants et procédé de fabrication d’un agencement de composants
DE102009000058A1 (de) 2009-01-07 2010-07-08 Robert Bosch Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
US8101438B2 (en) * 2009-07-27 2012-01-24 Silverbrook Research Pty Ltd Method of fabricating printhead integrated circuit with backside electrical connections
US8323993B2 (en) * 2009-07-27 2012-12-04 Zamtec Limited Method of fabricating inkjet printhead assembly having backside electrical connections
US8287094B2 (en) 2009-07-27 2012-10-16 Zamtec Limited Printhead integrated circuit configured for backside electrical connection
DE102009055718A1 (de) * 2009-11-26 2011-06-01 Continental Automotive Gmbh Sensormodul, Herstellungsverfahren eines Sensormoduls sowie Spritzgießwerkzeug zum Umgießen eines Sensormoduls
DE102009060002A1 (de) * 2009-12-21 2011-06-22 Micro-Epsilon Messtechnik GmbH & Co. KG, 94496 Sensor
US8574960B2 (en) * 2010-02-03 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material
US9324586B2 (en) 2011-08-17 2016-04-26 Infineon Technologies Ag Chip-packaging module for a chip and a method for forming a chip-packaging module
DE102012102021A1 (de) * 2012-03-09 2013-09-12 Epcos Ag Mikromechanisches Messelement und Verfahren zur Herstellung eines mikromechanischen Messelements
DE102014008838B4 (de) 2014-06-20 2021-09-30 Kunststoff-Zentrum In Leipzig Gemeinnützige Gmbh Spannungsreduzierendes flexibles Verbindungselement für ein Mikroelektroniksystem
DE102014008839B4 (de) 2014-06-20 2021-09-30 Kunststoff-Zentrum In Leipzig Gemeinnützige Gmbh Dehnungskompensierendes Verbindungselement für ein Mikroelektroniksystem
DE102016106122B4 (de) 2016-04-04 2019-09-05 Infineon Technologies Ag Wandlerpackage mit integrierter Dichtung und Verfahren zu dessen Herstellung
DE102016124270A1 (de) * 2016-12-13 2018-06-14 Infineon Technologies Ag Halbleiter-package und verfahren zum fertigen eines halbleiter-package
EP3456682B1 (fr) * 2017-09-15 2023-09-13 TE Connectivity Solutions GmbH Système de capteur, agencement de capteur et procédé d'assemblage faisant appel à la soudure pour l'étanchéité
US20220270960A1 (en) * 2021-02-23 2022-08-25 Texas Instruments Incorporated Open-Cavity Package for Chip Sensor
US20220396474A1 (en) * 2021-06-11 2022-12-15 Texas Instruments Incorporated Semiconductor package with metal column mold barrier
US20220415762A1 (en) * 2021-06-27 2022-12-29 Texas Instruments Incorporated Semiconductor package with drilled mold cavity
DE102022213484A1 (de) 2022-12-12 2024-06-13 Robert Bosch Gesellschaft mit beschränkter Haftung Integrierter Schaltkreis für eine Leiterplatte und Kontaktsystem

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724287B2 (ja) * 1987-02-12 1995-03-15 三菱電機株式会社 光透過用窓を有する半導体装置とその製造方法
JP4024335B2 (ja) * 1996-01-26 2007-12-19 ハリス コーポレイション 集積回路のダイを露出させる開口部を有する集積回路装置とその製造方法
DE19626082C2 (de) * 1996-06-28 2000-10-26 Siemens Ag Bauelementgehäuse für eine Oberflächenmontage eines Halbleiter-Bauelementes
FR2767389B1 (fr) * 1997-08-18 1999-10-29 St Microelectronics Sa Dispositif semi-conducteur a moyen optoelectronique d'echanges a distance de signaux
US6015239A (en) * 1998-04-20 2000-01-18 Cielo Communications, Inc. Passively aligned opto-electronic coupling assembly
DE19826426C2 (de) * 1998-06-16 2003-08-21 Elbau Elektronik Bauelemente G Miniaturisiertes elektronisches System und Verfahren zu seiner Herstellung
DE19854396C2 (de) * 1998-11-25 2002-02-07 Freudenberg Carl Kg Sensormodul
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6227724B1 (en) * 1999-01-11 2001-05-08 Lightlogic, Inc. Method for constructing an optoelectronic assembly
US6255728B1 (en) * 1999-01-15 2001-07-03 Maxim Integrated Products, Inc. Rigid encapsulation package for semiconductor devices
JP2000214034A (ja) * 1999-01-28 2000-08-04 Matsushita Electric Works Ltd 半導体圧力センサ及びその製造方法
JP2000249611A (ja) * 1999-02-26 2000-09-14 Matsushita Electric Works Ltd 半導体圧力センサ
EP1041628A3 (fr) * 1999-03-29 2008-05-28 Interuniversitair Microelektronica Centrum Vzw Empaquetage à réseau de billes (BGA) pour capteru d'images et son procédé de fabrication
JP3562390B2 (ja) * 1999-06-25 2004-09-08 松下電工株式会社 半導体圧力センサ及びその製造方法
JP2001033666A (ja) * 1999-07-15 2001-02-09 Canon Inc 一体型光モジュール、一体型光モジュールユニットおよび光通信システム
JP3502305B2 (ja) * 1999-08-13 2004-03-02 Ｎｅｃ化合物デバイス株式会社 光半導体装置
JP2001083370A (ja) * 1999-09-13 2001-03-30 Mitsubishi Electric Corp 表面実装型光デバイス
JP2001227902A (ja) * 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US6784409B2 (en) 2000-03-28 2004-08-31 Canon Kabushiki Kaisha Electronic device with encapsulant of photo-set resin and production process of same
EP1246235A1 (fr) * 2001-03-26 2002-10-02 European Semiconductor Assembly (Eurasem) B.V. Procédé d'encapsulation d'une puce ayant une surface sensible
JP2002340849A (ja) * 2001-05-15 2002-11-27 Matsushita Electric Works Ltd 半導体イオンセンサ及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
None *
See also references of WO03067657A3 *

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DE10205127A1 (de) 2003-08-28
WO2003067657A2 (fr) 2003-08-14
WO2003067657A3 (fr) 2003-11-13
US6987312B2 (en) 2006-01-17
US20050046044A1 (en) 2005-03-03

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