EP1445820A1 - Dispositif de commutation haute fréquence - Google Patents

Dispositif de commutation haute fréquence Download PDF

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Publication number
EP1445820A1
EP1445820A1 EP03026448A EP03026448A EP1445820A1 EP 1445820 A1 EP1445820 A1 EP 1445820A1 EP 03026448 A EP03026448 A EP 03026448A EP 03026448 A EP03026448 A EP 03026448A EP 1445820 A1 EP1445820 A1 EP 1445820A1
Authority
EP
European Patent Office
Prior art keywords
line structure
diode
switching device
structure elements
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03026448A
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German (de)
English (en)
Other versions
EP1445820B1 (fr
Inventor
Bernd Biehlman
Heinrich Dr. Gotzig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo Schalter und Sensoren GmbH
Original Assignee
Valeo Schalter und Sensoren GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Schalter und Sensoren GmbH filed Critical Valeo Schalter und Sensoren GmbH
Publication of EP1445820A1 publication Critical patent/EP1445820A1/fr
Application granted granted Critical
Publication of EP1445820B1 publication Critical patent/EP1445820B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the invention relates to a high-frequency RF switching device for switching high-frequency signals.
  • FIG. 5 An example of this is shown in FIG. 5 shown and will be described in more detail below:
  • the RF switching device shown in Figure 5 has one HF-E high-frequency input for feeding in High-frequency signals and a high-frequency output HF-A for Output the high frequency signals when the RF switching device 100 opened respectively is switched through.
  • the RF input HF-E and the High frequency output HF-A are over a Interconnect line structure 110 interconnected.
  • the Connection line structure is as a series connection trained and includes in Figure 5 from left to right seen on the right the HF-E high frequency input, a first one Capacitor C1, a first line structure element 112 of Length ⁇ / 8, a second line structure element 114 of length ⁇ / 4, a third line structure element 116 of length ⁇ / 8, a second capacitor C2 and the high frequency output HF-A.
  • a first diode path 120-1 connected between the first line structure element 112 and the second line structure element 114 of FIG Trunk structure 110 is on one Connection point 113 a first diode path 120-1 connected.
  • a second diode path 120-2 is constructed in the same way like the first diode path 120-1 and therefore comprises also a line structure element 120-2-1 and one Diode 120-2-2.
  • the cathode of this diode is also ground switched while their anode is connected to one end of the Line structure element 120-2-1 is connected.
  • the other end of this structural element is between the second and the third line structure element 114, 116 of FIG Trunk structure 110 connected.
  • the known RF switching device 100 also includes one Low frequency input NF-E for creating a Switching voltage, preferably 5 volts or 0 volts or -5 Volt, which via an RF coupling circuit 130 to the Connection point between the first and second Line structure element 112, 114 of the Connection line structure 110 is connected.
  • the RF coupling circuit 130 is designed as a low pass, so that they pass low-frequency signals and DC voltages leaves while blocking high-frequency signals.
  • the high-frequency switching device 100 first becomes the locked state described, that is, the behavior of the device when a direct voltage of. at the low frequency input NF-E for example 0 volt is applied. As I said, it can then in the case of a DC voltage or Low frequency consideration of all line structure elements 112, 114, 116, 120-1-1 and 120-2-1 as short circuits be considered. This means that at all Connection points of these structural elements a voltage of 0 volts is present.
  • the diodes 120-1-2 and 120-2-2 are then both switched between 0 volts and ground, that is, they are high impedance and lock.
  • the RF coupling circuit 130 can now be used as a series resistor for the two diodes be considered.
  • connection point 115 is in turn from the second line structure element 114 with the length ⁇ / 4 in a high-resistance left end of the Line structure element 114 transformed.
  • no high-frequency signals are injected, that is also that there are no RF signals via the HF output HF-A can be coupled out; this blocks the RF switching device 100th
  • the line structure element 120-1-1 of the first diode path 120-1 transforms its high-resistance connection point to the anode of diode 120-1-2 in a low-resistance connection point 113 between the first and second structural elements 112, 114 of Trunk structure 110.
  • the RF coupling circuit 130 acts as a series resistor for the two diodes 120-1-2 and 120-2-2. Falls over both diodes now their respective diode voltage off, that is, they are both controlled and lead.
  • This state of the diodes also applies to the following one RF viewing. Because the diodes can conduct their anodes are each considered to be low-resistance. The two act in high frequency Line structure elements 120-1-1 and 120-2-1 of the two Diode paths 120-1 and 120-2 each as Impedance transformer and cause a high impedance of the Connection points 113 and 115. As a result, the two diode paths 120-1 and 120-2 for how it works the switching device ignored in high-frequency operation can be. Only that remains Connection structure 110, at their connection point 113 via the coupling circuit 130 a switching voltage of 5 volts is applied.
  • the two diode paths extend 120-1 and 120-2 both spatially in the same direction, that means, down, away from the trunk structure 110.
  • their two Line structure elements 120-1-1 and 120-2-1 spatially narrow together and face each other so that it is too undesirable interactions of the magnetic and electrical fields of these two line structure elements, that is, crosstalk between the two Line structure elements can come.
  • the isolation between these two diode paths at their arrangement shown is only slight.
  • a known RF switching device with to further develop at least two diode paths such that crosstalk between the line structure elements of the Diode paths are prevented as much as possible.
  • isolation is an inverse of the term Understanding "crosstalk” means good isolation means little crosstalk and vice versa.
  • the diodes basically viewed as ideal, that is, they are similar in low frequency and high frequency behavior.
  • the claimed spatial arrangement of the line structure elements in the Diode paths have a sufficiently high isolation between reached this, which is why the RF circuit device according to the invention also for applications that such require high insulation is suitable.
  • Such applications are for example pulse radars for parking aids, Blind spot detection or for accident warning devices at Motor vehicles.
  • a particularly large insulation between the line structure elements of the diode paths achieved that this is particularly the case with planar Arrangement, extend in opposite directions.
  • FIG 1 shows a first embodiment of the RF switching device 100 according to the invention basic structure and how it works the same as those above for the RF switching device shown in Figure 5 have been explained. Same components are the same in all figures of the description Reference numerals.
  • Figure 2 shows a second embodiment of the RF switching device 100 according to the invention, which itself of the first embodiment shown in Figure 1 only differs in that the diodes 120-1-2 and 120-2-2 in the two diode paths 120-1 and 120-2 are reversed in each case. More specifically, lie in 2 shows the anodes of the two diodes (120-1-2, 120-2-2) each to ground while their cathodes are connected to the respective Line structure elements 120-1-1 and 120-2-1 of the respective Diode paths are connected.
  • This reverse installation the diodes only change the potential of the LF switching voltage, In terms of HF, this has neither on the functioning of the Circuit still to the high desired according to the invention Isolation between the two line structure elements of the Diode paths have an impact.
  • FIG. 3 shows a third exemplary embodiment of the invention with an RF switching device modified compared to the first and second exemplary embodiments.
  • Modified RF switching device 100 'of that in Figure 1 RF switching device 100 shown in that the second Line structure element 114 of the connection line structure here is split into two sub-line structure elements 114-1 and 114-3. These are two line structure elements connected to each other via a connection point 114-2. Furthermore, that connection point of the RF coupling circuit is now 130, which is designed as NF input NF-E is, not with the connection point 113, but with the Connection point 114-2 connected. Furthermore is on this Junction 114-2 a third diode path 120-3 coupled. The coupling takes place more precisely via a End of a ⁇ / 4 line structure element 120-3-1 this Diodes path. The other end of this Line structure element 120-3-1 is one with the anode Diode 120-3-2 connected, the cathode of which is grounded.
  • Insulation between the line structure elements 120-1-1, 120-2-1 and 120-3-1 maximized by being spatial are far apart.
  • the spatial separation is here realized in particular by the third Diode path 120-3 - starting from connection point 114-2 the interconnect structure 110 '- into one opposite direction as the other two Diode paths 120-1 and 120-2 extends.
  • respective line structure elements 120-1-1, 120-2-1 and 120-3-1 convert the high-resistance anode potentials into low-resistance potentials at their connection points 113, 114-2 and 115 toward the interconnect structure 110 ' around.
  • this changes from the low-impedance Junction 115 on its right hand side this around in a high-resistance left side.
  • connection point 114-2 the entire right part of the connecting line structure 110 ′ lying therefrom, that is, the parts 114-3, 120-2 and C2 as a whole have a high resistance act and therefore for a high-frequency consideration in the Further are not to be considered.
  • connection point 114-2 low-resistance.
  • This low resistance state at connection point 114-2 is due to the line structure element 114-1 its length ⁇ / 4 in a high-resistance left side transformed.
  • This connection point 113 is via diode path 120-1 low impedance, that is, there can be no power in it be fed to the RF input HF-E, as above was explained with reference to FIG. 5.
  • Figure 4 shows a fourth embodiment of the Invention, which is constructed similarly to that in Figure 1 shown first embodiment.
  • the difference to that first embodiment is that the Diode paths have no line structure elements here.
  • the two diodes are in the same direction from the connecting line structure switched away to ground would be high frequency crosstalk possible between the masses. Therefore, according to the invention proposed, even with such training Diode paths without respective line structure elements respective diodes in relation to the Connection line structure in the opposite direction to arrange, as shown for example in Figure 4. In this way, there is also improved insulation and thus a reduction in crosstalk between the Diode paths reached, which also makes the fourth Embodiment of the RF switching device for Applications that require increased insulation between the diode paths.

Landscapes

  • Electronic Switches (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Inverter Devices (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
EP03026448A 2003-02-10 2003-11-20 Dispositif de commutation haute fréquence Expired - Lifetime EP1445820B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10305302 2003-02-10
DE10305302A DE10305302A1 (de) 2003-02-10 2003-02-10 Hochfrequenz-Schaltvorrichtung

Publications (2)

Publication Number Publication Date
EP1445820A1 true EP1445820A1 (fr) 2004-08-11
EP1445820B1 EP1445820B1 (fr) 2008-03-26

Family

ID=32603220

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03026448A Expired - Lifetime EP1445820B1 (fr) 2003-02-10 2003-11-20 Dispositif de commutation haute fréquence

Country Status (3)

Country Link
EP (1) EP1445820B1 (fr)
AT (1) ATE390722T1 (fr)
DE (2) DE10305302A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2452062C1 (ru) * 2011-03-24 2012-05-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Двухканальный переключатель свч
EP2717473A1 (fr) * 2011-05-24 2014-04-09 Imagineering, Inc. Dispositif de commutation à haute fréquence et dispositif de délivrance d'une tension de polarisation
RU167594U1 (ru) * 2016-07-19 2017-01-10 Акционерное общество "Федеральный научно-производственный центр "Нижегородский научно-исследовательский институт радиотехники" Широкополосный микрополосковый СВЧ переключатель
RU2627541C1 (ru) * 2016-04-06 2017-08-08 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Переключатель-делитель СВЧ
RU2659302C1 (ru) * 2017-07-05 2018-06-29 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Многоканальный коммутатор СВЧ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2479079C1 (ru) * 2011-09-20 2013-04-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Двухканальный переключатель свч
RU2504869C2 (ru) * 2012-04-06 2014-01-20 Открытое акционерное общество "Концерн "Созвездие" Свч переключатель на pin-диодах с фильтрующими свойствами

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3402340A (en) * 1966-09-20 1968-09-17 Northern Electric Co Frequency multiplier and a plurality of tuning stubs to achieve isolation
GB2121239A (en) * 1982-05-13 1983-12-14 Standard Telephones Cables Ltd A solid state change-over switch for microwave signals
EP0446050A2 (fr) * 1990-03-08 1991-09-11 Sony Corporation Dispositif de commutation de signaux d'émission/réception
US5283539A (en) * 1992-09-09 1994-02-01 Itt Corporation Monolithic compatible, absorptive, amplitude shaping network
JP2000013104A (ja) * 1998-06-19 2000-01-14 Toyota Central Res & Dev Lab Inc 高周波スイッチ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987000696A1 (fr) * 1985-07-18 1987-01-29 Hughes Aircraft Company Commutateur a micro-onde active
JPH06232657A (ja) * 1993-02-03 1994-08-19 N T T Idou Tsuushinmou Kk 高周波増幅器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3402340A (en) * 1966-09-20 1968-09-17 Northern Electric Co Frequency multiplier and a plurality of tuning stubs to achieve isolation
GB2121239A (en) * 1982-05-13 1983-12-14 Standard Telephones Cables Ltd A solid state change-over switch for microwave signals
EP0446050A2 (fr) * 1990-03-08 1991-09-11 Sony Corporation Dispositif de commutation de signaux d'émission/réception
US5283539A (en) * 1992-09-09 1994-02-01 Itt Corporation Monolithic compatible, absorptive, amplitude shaping network
JP2000013104A (ja) * 1998-06-19 2000-01-14 Toyota Central Res & Dev Lab Inc 高周波スイッチ

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MANSOUR R R ET AL: "Analysis of microstrip T-junction and its application to the design of transfer switches", MICROWAVE SYMPOSIUM DIGEST, 1992., IEEE MTT-S INTERNATIONAL ALBUQUERQUE, NM, USA 1-5 JUNE 1992, NEW YORK, NY, USA,IEEE, US, 1 June 1992 (1992-06-01), pages 889 - 892, XP010063048, ISBN: 0-7803-0611-2 *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) *
TEETER D ET AL: "Ka-band GaAs HBT PIN diode switches and phase shifters", MICROWAVE SYMPOSIUM DIGEST, 1994., IEEE MTT-S INTERNATIONAL SAN DIEGO, CA, USA 23-27 MAY 1994, NEW YORK, NY, USA,IEEE, 23 May 1994 (1994-05-23), pages 451 - 454, XP010586625, ISBN: 0-7803-1778-5 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2452062C1 (ru) * 2011-03-24 2012-05-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Двухканальный переключатель свч
EP2717473A1 (fr) * 2011-05-24 2014-04-09 Imagineering, Inc. Dispositif de commutation à haute fréquence et dispositif de délivrance d'une tension de polarisation
EP2717473A4 (fr) * 2011-05-24 2015-04-15 Imagineering Inc Dispositif de commutation à haute fréquence et dispositif de délivrance d'une tension de polarisation
RU2627541C1 (ru) * 2016-04-06 2017-08-08 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Переключатель-делитель СВЧ
RU167594U1 (ru) * 2016-07-19 2017-01-10 Акционерное общество "Федеральный научно-производственный центр "Нижегородский научно-исследовательский институт радиотехники" Широкополосный микрополосковый СВЧ переключатель
RU2659302C1 (ru) * 2017-07-05 2018-06-29 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Многоканальный коммутатор СВЧ

Also Published As

Publication number Publication date
ATE390722T1 (de) 2008-04-15
EP1445820B1 (fr) 2008-03-26
DE50309461D1 (de) 2008-05-08
DE10305302A1 (de) 2004-08-19

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