EP1436444A1 - Procede et dispositif de controle d'un processus cvd - Google Patents

Procede et dispositif de controle d'un processus cvd

Info

Publication number
EP1436444A1
EP1436444A1 EP02801305A EP02801305A EP1436444A1 EP 1436444 A1 EP1436444 A1 EP 1436444A1 EP 02801305 A EP02801305 A EP 02801305A EP 02801305 A EP02801305 A EP 02801305A EP 1436444 A1 EP1436444 A1 EP 1436444A1
Authority
EP
European Patent Office
Prior art keywords
layer
values
substrate
temperature
coating cycle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02801305A
Other languages
German (de)
English (en)
Inventor
Michael Heuken
Matthias Bode
Michael Pfeil
Jürgen Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP1436444A1 publication Critical patent/EP1436444A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a method for coating a substrate with one or more layers in a process chamber.
  • the process chamber can in particular belong to a CVD system.
  • Starting materials in particular in the form of organometallic reaction gases, are introduced into this process chamber.
  • the reaction gases usually originate from a liquid source through which a carrier gas flows, which saturates with the vaporous organometallic compound.
  • the mass flow of the carrier gas through the source and thus into the process chamber is regulated by means of a mass flow controller.
  • the mass of the reaction gas introduced into the process chamber depends on the vapor pressure of the liquid source.
  • the process chamber contains a substrate holder. In a MOCVD process, this substrate holder is kept at a temperature by means of a heater.
  • the temperature is regulated according to a predetermined setpoint.
  • One or more substrates lie on the substrate holder, whereupon the starting materials or reaction products of the starting materials, for example pyrolytic decomposition products, are deposited.
  • the substrate holder can also be cooled in other CVD processes.
  • Each coating cycle takes place according to a predetermined recipe, which is stored in an electronic control device.
  • the recipe contains the target values of the process parameters such as the mass flows of the starting materials and the temperature of the substrate holder.
  • the electronic control device By switching valves in a gas supply system, the electronic control device is able to guide the reaction gases into the process chamber, bring the substrate holder or the process chamber to the process temperature, regulate the total pressure in the process chamber to a target value and the entire process to Taxes.
  • the process which generally begins with the loading of the process chamber with one or more substrates and which ends with the removal of the substrates from the process chamber is referred to below as the coating cycle.
  • Each coating cycle can consist of a large number of sections in which different gas compositions are introduced into the process chamber.
  • the temperature of the substrate holder can assume different values during the individual sections. In particular, it can be provided that temperature ramps are driven during a cycle section. A large number of coating cycles are carried out with one and the same recipe to produce a large number of layers or layer systems of the same structure. Statistical or systematic deviations of the actual values of the process parameters from the target values can occur. These actual values are determined in time intervals during each coating cycle. The masses of the reaction gases actually flowing into the process chamber and the temperatures actually reached are measured and stored in a storage device. In processes in which several substrates are on a substrate holder, the temperatures of the individual substrates are determined separately. The individual temperatures are saved individually for each substrate.
  • measurements are carried out on the layer or on the layer system to determine characteristic layer properties such as layer thickness, layer composition or electronic properties of the layers.
  • These layer properties which can also be determined during the coating cycle, are also stored in the memory device in a substrate-individualized manner.
  • Statistical investigations can be carried out from the actual values obtained and the determined layer properties of a large number of layers deposited with the same recipe. For this purpose, the actual values obtained are correlated with the determined layer properties.
  • the correlation values generated in the process are displayed or processed further by an analysis device in order to determine systematic or statistical deviations.
  • All available process parameters are preferably stored in a substrate-individualized manner and correlated by the analysis device with the properties of the layers or the components produced therefrom.
  • This type of analysis enables specific, systematic deviations of the layer properties from statistical mean values or from target values to be achieved to be directly correlated to specific process parameters. This makes it possible to determine the causes of deviations in the layer properties for certain substrates.
  • mean values are formed from the large number of individual target values obtained for each coating cycle. These mean values are correlated with the values of the layer properties. It is then investigated, for example, which of the target values has a similar course over the plurality of coating cycles as a layer property. In this way, the process parameter can be determined that is responsible for a deviation of a layer property in a specific substrate.
  • All available, in particular time-changing data come into consideration as process parameters, in particular the mass flows of all process gases introduced into the process chamber, the temperatures which are measured within the process chamber and in particular the temperatures of the individual substrates. Environmental parameters such as temperature, humidity and the purity of the ambient air are also considered.
  • the valve positions of the gas supply system are also included.
  • the surface temperature of the substrates and the rotational speed of substrates rotatingly arranged on a rotating substrate holder can be determined.
  • the growth rate of the layer during the coating process can also be determined individually using suitable methods.
  • the layer properties during growth can also be determined by means of optical examinations. All data are stored specific to the substrate in the storage device.
  • a wide variety of measurement variables can be recorded for each wafer in a spatially and time-resolved manner as the layer grows.
  • the measurement variables for each wafer are recorded and stored several times at a series of different points on the wafer surface in each growth step.
  • one or more quality figures are determined for each wafer during the growth process (e.g. variation of the layer thickness over the wafer). These figures of merit are correlation values from the raw data of the measured variables determined.
  • the quality figures can be used to determine the further process steps for each wafer individually and automatically.
  • the measurement on the individual substrates is preferably carried out at at least three different locations, so that deviations in the layer thickness or the deposition temperature during growth on a layer, i.e. its homogeneity can be determined.
  • the analysis device is able to graphically represent the generated correlation values. This can be done, for example, as a diagram. For example, it is envisaged to plot the temperature profiles in the form of a temperature / time diagram and to indicate in the same diagram the temporal profile of the growth rate or another layer property.
  • the characteristic layer properties which are correlated with the actual values obtained can also be obtained in particular during the coating cycle. Then the direct influence of a process parameter on a layer property can be determined and displayed graphically.
  • the quality-relevant properties of the layers are correlated with the process parameters. If the layer system is to be suitable, for example, for the production of quantum well lasers, the substrate temperature will be linked as process parameters to the electronic properties or the growth rate of the layers determining the quantum well.
  • the characteristic V-III ratio will be correlated to the gas temperature in the process chamber or to the mass flows of the V component and the III component (arsine, phosphine or TMG, TMI).
  • Correction values for individual process parameters can be determined from the generated correlation values using a correction value calculator. These correction values take into account the temporal drift of layer properties, which arises, for example, from the fact that starting materials in storage containers change over time or that the turnover in the organometallic sources changes due to consumption. The consumption and running times of the individual components are also added up. This makes it possible to indicate on the right side that the sources have been supplemented.
  • the method according to the invention it is possible to recognize trends and drifts in the process at an early stage and to keep the process result within the desired tolerance range by means of automatic countermeasures. The trends and drifts are evaluated from coating cycle to coating cycle. The automatically initiated countermeasures can compensate for trends and drifts from coating cycle to coating cycle.
  • Such a correction value formation can also take place during a process cycle.
  • the current layer growth is determined during a process cycle. It is then possible to react to changing growth rates by shortening or lengthening a process step.
  • the respective V-III ratio is to be measured and to react to time deviations from the target value during a process step, for example by the V component or the III component in the gas phase is reduced or increased that the associated gas flow is changed. Exemplary embodiments of the method and the device are explained below with reference to the attached drawings. Show it:
  • Fig. 1 shows a rough schematic of the process chamber of a CVD system and the associated gas mixing system
  • Fig. 2 roughly a process computer with control unit and memory unit and associated display device.
  • FIG. 3 is a rough schematic representation of the hardware of a control device according to the invention.
  • Fig. 4 shows the individual components of the associated software
  • Fig. 5 is a block diagram of the program flow.
  • a substrate holder 2 which has a circular disk shape and is driven in rotation about its axis.
  • a plurality of substrates 4 are arranged in a planetary manner on the upper side of the substrate holder 2 around the center of the substrate holder 2. These substrates 4 are also driven in rotation. For this purpose, they can be arranged on corresponding rotating sections of the substrate holder 2.
  • a heater 3 is located below the substrate holder 2, for example in the form of a high-frequency source.
  • the temperature of the substrate holder 2 is measured by means of a thermocouple 10.
  • the rotation of the substrate holder 2 or the rotation of the substrates 4 is measured with a rotation speed meter 12.
  • an optical temperature measuring device 11 the temperature of the substrate surface can be measured.
  • the temperature measured by the temperature measurement sensor 11 can be individually assigned to each individual substrate 4. These measured values are determined at predetermined time intervals and stored in an actual / target value memory 18 of a memory device 16 of the process computer 14.
  • the process gases are provided by a gas mixing system 6.
  • the structure of such a gas mixing system 6 is shown roughly schematically in FIG.
  • the individual reaction gases such as arsine, phosphine or the like and also carrier gases such as noble gases or hydrogen or nitrogen are switched by means of valves 9.
  • the gases which are introduced into the gas inlet 5 of the process chamber 1 through the feed line 13 are regulated by means of the mass flow controller 7.
  • the organometallic components originate from evaporation sources 8, through which a carrier gas is passed, which is also switched by valves 9 and whose flow is regulated by mass flow controllers 7.
  • the control device 15 delivers target values to the mass flow controllers 7.
  • the target values and the actual values are stored substrate-specifically in the actual / target value memory 18.
  • the process is controlled by the control device 15 according to a recipe which is stored in a recipe memory 17.
  • the process parameters are stored there in the form of target values that are set at certain times.
  • characteristic layer properties 21 determined. These are then stored in a corresponding memory 21. However, it is also provided that the characteristic layer properties such as layer thickness, V-III ratio or electronic properties of the layer are measured later. These data are also stored in the memory 21 in relation to the substrate.
  • Correlation values 19 are then formed with these data, that is to say with the actual / target values 18 of the process parameters and the layer properties 21. This is done, for example, by contrasting the historical course of the actual values 18 with the historical course of the layer properties 21. The individual curves or functions formed in this way are compared with one another in order to find characteristic deviations or matches.
  • a layer property of a substrate that has been coated with a layer in a very specific coating cycle can have a specific deviation from the mean value. This can be shown graphically as shown in the figures. The actual value curves can then be examined to determine whether there is a deviation from the mean value for the corresponding coating cycle. In this way the cause of a quality deviation can be determined.
  • the process computer 14 is also able to simulate a coating cycle. This is done using virtual actuators such as valves, mass flow controllers or heaters.
  • the actuators are set according to the recipe and return virtual actual values.
  • a plausibility check is carried out according to predefined rules that are stored in the process computer. These rules say, for example, that a certain valve must not be opened before another valve or that a valve can only be opened then may open if there is a certain total pressure or a certain temperature in the process chamber.
  • the ambient air can be checked for the presence of reaction gases. If there is a reaction gas in the ambient air, this indicates a leak in the CVD system or a defective gas disposal.
  • the method according to the invention is able to react to short-term and long-term deviations of the actual parameters from the target parameters.
  • the method is also able to detect trends or drifts in the layer properties both during a coating cycle and over the history of a large number of coating cycles. It is able to use the deviations of the actual values of the layer properties from the target values and the correlation values obtained to determine correction values with which the process parameters can be varied in order to detect the trends and drifts in the Compensate for the process at an early stage.
  • the influencing does not take place within the recipe, but rather to the set values that are fed to the mass flow controllers or temperature controllers.
  • a layer with a certain composition and a certain layer thickness should be deposited within a certain process step.
  • the layer growth is observed in situ using optical sensors. The growth rate or the current layer thickness is measured. If the layer thickness reaches its target value, the coating step is ended and the next step is continued. This method can also prevent trends and drifts.
  • FIGS. 1-10 The software components and the hardware components of the device according to the invention are shown roughly schematically in FIGS.
  • the 3 indicates a control and storage device 14 in which the editing of the recipe, the checking of the plausibility of the recipe and the translation of the recipe in a compiler into process control signals. These process control signals are fed to the coating unit 22 via a data line.
  • This coating unit can be spatially separated from the control and storage device 14.
  • the coating unit 22 can be a MOCVD system, a device for separating oxides or a device for separating organic substances.
  • the control and storage device 14 can also cooperate with several, in particular different, coating units 22. For example, it is provided that the control and storage device 14 cooperate with a plurality of coating units 22 which are connected to a common transfer chamber.
  • the process control signals are further processed in the coating unit 22 by a process control device 23.
  • the individual mass flow controllers of the gas supply system 6 or the heater 3 are controlled with these signals.
  • a total pressure control 24 is also supplied with control data by the process control device 23.
  • the mass flow controllers of the gas supply system 6 or the heating of the substrate 3 and the total pressure controller 24 return actual values to the process control device 23. These actual values are fed to the control and storage device 14 via the data line.
  • the coating unit 22 also has a safety logic 25.
  • the safety logic processes a large number of input data.
  • the input data can be the valve positions, the mass flows, the temperatures, i.e. any process parameters.
  • input data of the safety logic are also data that are determined by sensors 11 of the coating unit, that is to say, for example, prints, outside temperatures or the like.
  • Data determined by external sensors 26 are also fed to the safety logic, for example data relating to whether the supply air or the extract air is functioning properly.
  • the safety logic is able to automatically bring the coating unit into a safe operating state if errors are determined by the sensors 11, 26.
  • the relevant logic is hard-wired and thus protected against programming errors.
  • the control and storage device shown in FIG. 4 has a module which has a recipe editor. With this module the layer sequence to be deposited can be selected. This takes place, for example, using a menu from which a combination can be selected from a large number of standard recipes in order to separate the desired layer sequence. In the recipe editor you can also use a special Syntax the layer sequence can be edited. There is also provision for direct access to the individual mass flow controllers or valves with the recipe editor.
  • the control and storage device 14 also has a module with which statistical process control is possible. This module is in particular able to evaluate the target values adopted by the coating unit via an interface. The data supplied to the interface is distributed via a central unit. The analysis unit that is assigned to the statistical process control is also able to determine the correction values mentioned above.
  • correction unit downstream of the analysis unit. All actual and target values are saved in a log unit.
  • the values determined by the correction unit are sent to the module of the recipe editor.
  • the correction values are either sent directly to the compiler or to the recipe editor, where they can be taken into account when editing the process steps.
  • the compiler calculates the process parameters using the simulator. Correction data can also be used if necessary. Safety-relevant variables are also taken into account when calculating the process parameters.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé consistant à revêtir au moins un substrat (4) d'une ou de plusieurs couches dans une chambre de procédé (1), en particulier dans une installation CVD, procédé selon lequel, les produits de départ, se présentant principalement sous forme de gaz de réaction organométalliques, sont introduits dans la chambre de procédé (1), et leur débit massique est réglé, les produits de départ ou les produits de réaction sont déposés en couches sur le substrat (4) qui est placé sur un support (2) à température réglée. Durant un cycle de revêtement qui commence en chargeant la chambre de procédé (1) d'un ou de plusieurs substrats, et se termine en retirant ceux-ci, conformément à un mode opératoire prédéterminé, les valeurs de consigne des paramètres de procédé (18), telles que débit massique des produits de départ et température du support du substrat, sont réglées, et les valeurs réelles pour chaque substrat qui correspondent aux valeurs de consigne des paramètres de procédé sont déterminées individuellement à intervalles réguliers et sont mémorisées dans une mémoire. Durant le cycle de revêtement, ou après chaque cycle de revêtement, ou après une ou plusieurs étapes successives de traitement effectuées sur la couche ou sur un système de couches comprenant plusieurs couches, les caractéristiques de couches (21), telles que l'épaisseur et la composition des couches sont déterminées et mémorisées tout en étant associées aux données individualisées des substrats correspondants. Les valeurs réelles obtenues et les caractéristiques de couches qui ont été déterminées pour une pluralité de couches déposées suivant le même mode opératoire sont ensuite amenées en corrélation et les valeurs de corrélation sont générées.
EP02801305A 2001-10-17 2002-10-02 Procede et dispositif de controle d'un processus cvd Withdrawn EP1436444A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10151259A DE10151259A1 (de) 2001-10-17 2001-10-17 Verfahren und Vorrichtung zur Gewinnung von Korrelations-Werten aus Prozessparametern und Schichteigenschaften in einem CVD-Prozess
DE10151259 2001-10-17
PCT/EP2002/011037 WO2003033763A1 (fr) 2001-10-17 2002-10-02 Procede et dispositif de controle d'un processus cvd

Publications (1)

Publication Number Publication Date
EP1436444A1 true EP1436444A1 (fr) 2004-07-14

Family

ID=7702800

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02801305A Withdrawn EP1436444A1 (fr) 2001-10-17 2002-10-02 Procede et dispositif de controle d'un processus cvd

Country Status (4)

Country Link
US (1) US20040261704A1 (fr)
EP (1) EP1436444A1 (fr)
DE (1) DE10151259A1 (fr)
WO (1) WO2003033763A1 (fr)

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Publication number Priority date Publication date Assignee Title
DE102005024010B4 (de) * 2005-05-20 2013-07-04 Schott Ag Beschichtungsanlage mit Einrichtungen für Prüf- und Serviceroutinen und Verfahren zum Durchführen von Prüf- und Serviceroutinen bei Beschichtungsanlagen
JP2011500961A (ja) 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
DE102017130551A1 (de) * 2017-12-19 2019-06-19 Aixtron Se Vorrichtung und Verfahren zur Gewinnnung von Informationen über in einem CVD-Verfahren abgeschiedener Schichten
DE102019107295A1 (de) * 2019-03-21 2020-09-24 Aixtron Se Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen
CN113097108A (zh) * 2021-03-31 2021-07-09 北京北方华创微电子装备有限公司 半导体工艺的控制方法和半导体工艺设备
DE102022134331A1 (de) 2022-12-21 2024-06-27 Aixtron Se Verfahren zur Vermeidung von Fehlbedienung eines CVD-Reaktors
DE102022134333A1 (de) 2022-12-21 2024-07-11 Aixtron Se Verfahren zur Vermeidung von Fehlbedienung eines CVD-Reaktors

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US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US5862057A (en) * 1996-09-06 1999-01-19 Applied Materials, Inc. Method and apparatus for tuning a process recipe to target dopant concentrations in a doped layer
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
US6684122B1 (en) * 2000-01-03 2004-01-27 Advanced Micro Devices, Inc. Control mechanism for matching process parameters in a multi-chamber process tool

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Also Published As

Publication number Publication date
DE10151259A1 (de) 2003-04-30
WO2003033763A1 (fr) 2003-04-24
US20040261704A1 (en) 2004-12-30

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