EP1388899A2 - Oxidsupraleiterdraht - Google Patents

Oxidsupraleiterdraht Download PDF

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Publication number
EP1388899A2
EP1388899A2 EP03016696A EP03016696A EP1388899A2 EP 1388899 A2 EP1388899 A2 EP 1388899A2 EP 03016696 A EP03016696 A EP 03016696A EP 03016696 A EP03016696 A EP 03016696A EP 1388899 A2 EP1388899 A2 EP 1388899A2
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EP
European Patent Office
Prior art keywords
oxide superconducting
layer
superconducting wire
thickness
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03016696A
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English (en)
French (fr)
Other versions
EP1388899A3 (de
Inventor
Takemi Superconductivity Res. Lab. Muroga
Yutaka Superconductivity Res. Lab. Yamada
Takeshi Superconductivity Res. Lab. Araki
Izumi Superconductivity Res. Lab. Hirabayashi
Teruo Superconductivity Res. Lab. Izumi
Yuh Superconductivity Res. Lab. Shiohara
Yasuhiro Ijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
International Superconductivity Technology Center
Original Assignee
Fujikura Ltd
International Superconductivity Technology Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Fujikura Ltd, International Superconductivity Technology Center filed Critical Fujikura Ltd
Publication of EP1388899A2 publication Critical patent/EP1388899A2/de
Publication of EP1388899A3 publication Critical patent/EP1388899A3/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Definitions

  • the present invention relates to an oxide superconducting wire, and more particularly relates to an oxide superconducting wire having an intermediate layer between a substrate and an oxide superconducting film.
  • RE-123-based oxide superconductors (REBa 2 Cu 3 O 7-x ; RE is a rare earth element including yttrium) are considered materials with extremely promising practical applications because they exhibit superconductivity over the temperature of liquid nitrogen, and there has been a great need for some way to work these materials into a wire for use as a conductor in power supply applications.
  • One method that has been studied for working an oxide superconductor into a wire is to produce a thin tape from a metal that has high strength and good heat resistance and lends itself to working into a wire, and form an oxide superconducting thin film on this metal tape substrate.
  • An oxide superconductor has electrical anisotropy, wherein the crystals themselves readily conduct electric current in the a and b axial directions of the crystal axis, but not so well in the c axial direction. Therefore, when an oxide superconductor is formed on a substrate, the a axis or b axis must be oriented in the direction in which electric current flows, and the c axis oriented in vertically to the flat surface.
  • the metal tape substrate itself is either amorphous or polycrystalline, and the crystal structure thereof differs greatly from that of an oxide superconductor, so it is difficult to form an oxide superconducting film having the above-mentioned good crystal orientation on this substrate.
  • the thermal expansion coefficient and the lattice constant of the substrate are different from those of the superconductor, which can result in strain being produced in the superconductor or in the oxide superconducting film separating from the substrate, in the course of cooling down to the superconducting critical temperature.
  • the resulting oxide superconducting film has such a low critical current density as to be impractical.
  • the reason for this is that the oxide superconducting film is obtained in a state in which numerous single-crystal grains are bonded in the planar direction of the substrate, forming a polycrystalline film, and the c axis of the individual crystal grains is oriented perpendicular to the substrate surface, but the a and b axes are still randomly oriented as shown in Fig. 1A, so crystal orientation is poor.
  • a metal substrate 1 on which a superconducting thin film is to be formed, a target 2 disposed opposite and at an angle to this metal substrate 1, a sputtering beam emitter 3 for sputtering the particles that make up the target 2, and an ion source 4 for obliquely directing ions of a rare gas at the surface of the substrate, are disposed within a vacuum vessel.
  • the inside of the vessel is evacuated to create a reduced pressure atmosphere, and the ion source 4 and the sputtering beam emitter 3 are actuated. Ions are emitted from the sputtering beam emitter 3 and directed at the target 2, which sputters the particles that make up the target 2 and deposits them on the metal substrate 1, and at the same time, mixed ions comprising rare gas ions and oxygen ions are emitted from the ion source 4 and directed at a specific irradiation angle ( ⁇ ) at the substrate surface.
  • YBa z Cu 3 O 7-y (hereinafter also referred to as YBCO) is formed on a YSZ layer formed by the IBAD method as above, barium diffuses from the YBCO layer into the YSZ layer, forming BaZrO 3 on the YSZ layer, which is a problem in that it decreases the critical temperature (Tc) and the critical current density (Jc).
  • a YSZ layer is formed by the IBAD method on a nickel alloy substrate, and then a CeO 2 layer and a YBCO layer are formed by the PLD method on this, and that the thickness of the CeO 2 layer is 30 nm and the thickness of the YSZ layer is 800 nm.
  • a YSZ layer is formed on a nickel alloy substrate by the IBAD method, and first a CeO 2 layer and then a YBCO layer are formed by the PLD method on this, and that the thickness of the YSZ layer is 500 nm and the thickness of the CeO 2 layer is 30 nm.
  • a YSZ layer is formed on a Hastelloy tape substrate by the IBAD method, a CeO 2 layer is formed by the PLD method on this, and then a YBCO film is formed by the TFA-MOD method, and that the thickness of the CeO 2 layer is 100 to 2000 nm. (There is no mention of the thickness of the YSZ layer, however.)
  • the IBAD method used to form this intermediate layer has the drawback of slow film formation. Further, if a YSZ layer is deposited on a substrate by the IBAD method, the orientation of the film will be inadequate if the film is thin, and the film thickness has to be about 1000 nm for the desired orientation to be achieved. Also, obtaining a film 1000 nm in thickness by the IBAD method takes considerable time, which is a problem in terms of productivity.
  • the inventors achieved the present invention upon discovering that when a CeO 2 layer is provided as a cap layer on an intermediate layer formed by the IBAD method, even if the intermediate layer is made thinner, as long as the cap layer is made thicker, a superconducting film with good orientation will be obtained.
  • An oxide superconducting wire composed of a metal substrate, an intermediate layer vapor-deposited by an ion beam assisted deposition method (IBAD method) on the metal substrate, a CeO 2 cap layer vapor-deposited on the intermediate layer, and an oxide superconducting film formed on the cap layer, wherein the thickness of the intermediate layer is no more than 2000 nm, and the thickness of the cap layer is at least 50 nm.
  • IBAD method ion beam assisted deposition method
  • REBa 2 Cu 3 O 7-x RE is a rare earth element including yttrium.
  • oxide superconducting wire according to any of (1) to (13) above, wherein the oxide superconducting film is formed by a pulsed laser deposition method (PLD method) or a metal organic deposition method (MOD method).
  • PLD method pulsed laser deposition method
  • MOD method metal organic deposition method
  • Fig. 1A shows how the a axis of the individual crystal grains constituting an oxide superconducting film is not oriented
  • Fig. 1B shows the a axis of the individual crystal grains is oriented.
  • the superconducting wire of the present invention has the layer structure shown in Fig. 3, consisting of an oxide superconducting film, a cap layer (CeO 2 layer), an IBAD intermediate layer, and a metal substrate.
  • the CeO 2 layer should be at least 50 nm in thickness, but for adequate orientation to be obtained, at least 100 nm is preferable, and at least 500 nm is even better. However, if the thickness exceeds 500 nm, crystal orientation will suffer. Therefore, a thickness of 5000 nm or less is preferred.
  • RE-123-based oxide superconductor (REBa 2 Cu 3 O 7-x ; RE is a rare earth element such as yttrium, lanthanum, neodymium, samarium, europium, or gadolinium) can be used as the material of the oxide superconducting film.
  • RE-123-based oxide is preferably Y123 (YBa 2 Cu 3 O 7-x ; hereinafter referred to as YBCO) or Sm123 (SmBa 2 Cu 3 O 7-x ; hereinafter referred to as SmBCO).
  • the oxide superconducting film can be formed by a standard method, but the use of the TFA-MOD method or the PLD method is preferable in terms of productivity.
  • the orientation of the IBAD layer is under 100 nm and a CeO 2 layer is deposited by the PLD method, the orientation will be over 10 degrees, which prevents adequate critical current from flowing. This is because if the orientation is over 10 degrees, there is insufficient electrical connection (weak bonding) between the YBCO crystals. However, if the thickness of the IBAD layer is at least 100 nm, the orientation of the CeO 2 layer becomes not more than 10 degrees and sufficient current flows.
  • the results shown in Figs. 5 and 6 show that the above-mentioned IBAD film thickness is preferably no more than 2000 nm, the effect of which is especially pronounced from the standpoint of increasing the manufacturing rate. Specifically, if the IBAD layer thickness is 2000 nm or less, the PLD-CeO 2 layer of this invention will be effective, but the IBAD layer thickness is preferably no more than 1000 nm, with 500 nm or less being even better. Also, in terms of the critical current density and orientation ultimately achieved, the thickness of the IBAD layer is preferable at least 100 nm.
  • Fig. 7 shows the ⁇ values for various CeO 2 films formed in nine different thicknesses: 20 nm, 50 nm, 100 nm, 300 nm, 600 nm, 1000 nm, 3000 nm, 5000 nm, and 7000 nm.
  • ⁇ is less than 10 degrees at a thickness between 100 and 5000 nm.
  • Example 2 The same test as in Example 1 was conducted, except that stainless steel and a nickel alloy were used instead of the Hastelloy used as the metal substrate in Example 1.
  • the results for the ⁇ of the CeO 2 layer and the Jc of the YBCO film were the same as before.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
EP03016696A 2002-08-06 2003-08-04 Oxidsupraleiterdraht Withdrawn EP1388899A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002229209A JP3854551B2 (ja) 2002-08-06 2002-08-06 酸化物超電導線材
JP2002229209 2002-08-06

Publications (2)

Publication Number Publication Date
EP1388899A2 true EP1388899A2 (de) 2004-02-11
EP1388899A3 EP1388899A3 (de) 2006-03-15

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EP03016696A Withdrawn EP1388899A3 (de) 2002-08-06 2003-08-04 Oxidsupraleiterdraht

Country Status (3)

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US (1) US20040026118A1 (de)
EP (1) EP1388899A3 (de)
JP (1) JP3854551B2 (de)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
EP1735847A2 (de) * 2004-04-08 2006-12-27 Superpower, Inc. Biaxial texturierte filmabscheidung für supraleiterbeschichtete bänder

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US7286032B2 (en) * 2003-07-10 2007-10-23 Superpower, Inc. Rare-earth-Ba-Cu-O superconductors and methods of making same
JP4619697B2 (ja) * 2004-03-11 2011-01-26 株式会社フジクラ 酸化物超電導導体とその製造方法
JP4519540B2 (ja) * 2004-03-31 2010-08-04 株式会社フジクラ 酸化物超電導導体の製造方法及び酸化物超電導導体
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US7226893B2 (en) * 2005-02-23 2007-06-05 Superpower, Inc. Superconductive articles having density characteristics
JP2007109717A (ja) * 2005-09-14 2007-04-26 Sharp Corp 超電導素子および超電導素子の製造方法
EP1990810A4 (de) * 2006-02-16 2012-08-29 Sumitomo Electric Industries Verfahren zur herstellung von supraleitendem dünnfilmmaterial, supraleitende einrichtung und supraleitendes dünnfilmmaterial
KR100766052B1 (ko) 2006-11-10 2007-10-12 학교법인 한국산업기술대학 필라멘트 타입용 고온초전도 선재의 제조방법
EP2138611B1 (de) * 2007-03-29 2015-08-19 Fujikura Ltd. Polykristalline dünnschicht und herstellungsverfahren dafür
JP2008303082A (ja) * 2007-06-05 2008-12-18 Kagoshima Univ エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板
JP5292054B2 (ja) * 2008-10-24 2013-09-18 株式会社フジクラ 薄膜積層体とその製造方法及び酸化物超電導導体とその製造方法
JP5297770B2 (ja) * 2008-11-21 2013-09-25 株式会社フジクラ 酸化物超電導導体用基材の製造方法と酸化物超電導導体の製造方法及び酸化物超電導導体用キャップ層の形成装置
JP5481135B2 (ja) * 2009-09-04 2014-04-23 株式会社フジクラ 酸化物超電導導体用基材及び酸化物超電導導体
KR20120082863A (ko) 2009-10-08 2012-07-24 가부시키가이샤후지쿠라 이온 빔 어시스트 스퍼터 장치 및 이온 빔 어시스트 스퍼터 방법
JP5427553B2 (ja) 2009-10-30 2014-02-26 公益財団法人国際超電導産業技術研究センター 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法
JP2011096546A (ja) * 2009-10-30 2011-05-12 Furukawa Electric Co Ltd:The 超電導線材用テープ基材の製造方法、超電導線材用テープ基材及び超電導線材
JP5513154B2 (ja) 2010-02-12 2014-06-04 昭和電線ケーブルシステム株式会社 酸化物超電導線材及び酸化物超電導線材の製造方法
JP5739726B2 (ja) * 2010-05-27 2015-06-24 古河電気工業株式会社 超電導薄膜用基材の製造方法、超電導薄膜用基材及び超電導薄膜
JP5941636B2 (ja) * 2011-09-08 2016-06-29 株式会社フジクラ 酸化物超電導導体用基材の製造方法および酸化物超電導導体の製造方法
KR20150029680A (ko) * 2012-06-08 2015-03-18 스미토모 덴키 고교 가부시키가이샤 산화물 초전도체 형성용의 원료 용액
EP3660475B1 (de) * 2018-11-28 2022-08-10 General Electric Company Systeme und verfahren zur thermischen überwachung

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1735847A2 (de) * 2004-04-08 2006-12-27 Superpower, Inc. Biaxial texturierte filmabscheidung für supraleiterbeschichtete bänder
EP1735847A4 (de) * 2004-04-08 2012-04-25 Superpower Inc Biaxial texturierte filmabscheidung für supraleiterbeschichtete bänder

Also Published As

Publication number Publication date
US20040026118A1 (en) 2004-02-12
JP3854551B2 (ja) 2006-12-06
EP1388899A3 (de) 2006-03-15
JP2004071359A (ja) 2004-03-04

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