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EP1229575A3 - Nanotopography removing method - Google Patents

Nanotopography removing method

Info

Publication number
EP1229575A3
EP1229575A3 EP20020001973 EP02001973A EP1229575A3 EP 1229575 A3 EP1229575 A3 EP 1229575A3 EP 20020001973 EP20020001973 EP 20020001973 EP 02001973 A EP02001973 A EP 02001973A EP 1229575 A3 EP1229575 A3 EP 1229575A3
Authority
EP
Grant status
Application
Patent type
Prior art keywords
nanotopography
wafer
gas
activated
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20020001973
Other languages
German (de)
French (fr)
Other versions
EP1229575A2 (en )
Inventor
Tadayoshi Okuya
Michihiko Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SpeedFam Co Ltd
Original Assignee
SpeedFam Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366Localised processing
    • H01J37/32376Scanning across large workpieces
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Abstract

To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has been regarded as impossible to remove conventionally, a half value width of an etching profile of activated species gas is set to fall in a range equal to or smaller than a wavelength a of nanotopography and equal to or larger than a half thereof. Based on previously measured data of nanotopography, moving speed and locus of injected activated species gas along a surface of a semiconductor wafer are calculated and controlled.
EP20020001973 2001-02-05 2002-02-04 Nanotopography removing method Withdrawn EP1229575A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001027639 2001-02-05
JP2001027639A JP2002231700A (en) 2001-02-05 2001-02-05 Nanotopography removal method

Publications (2)

Publication Number Publication Date
EP1229575A2 true EP1229575A2 (en) 2002-08-07
EP1229575A3 true true EP1229575A3 (en) 2002-08-21

Family

ID=18892259

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20020001973 Withdrawn EP1229575A3 (en) 2001-02-05 2002-02-04 Nanotopography removing method

Country Status (3)

Country Link
US (1) US6875701B2 (en)
EP (1) EP1229575A3 (en)
JP (1) JP2002231700A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3814558B2 (en) 2002-04-22 2006-08-30 スピードファム株式会社 Position of the local dry etching method and a semiconductor wafer surface - the thickness data processing method
KR100570122B1 (en) * 2003-05-12 2006-04-11 주식회사 사무코 Slurry composition for chemical mechanical polishing capable of compensating nanotopography effect and method of planarizing surface of semiconductor device using the same
EP1507172A1 (en) 2003-08-12 2005-02-16 ASML Netherlands B.V. Lithographic apparatus and apparatus adjustment method
US20060156635A1 (en) * 2004-12-16 2006-07-20 K.C. Tech Co., Ltd. Abrasive particles, polishing slurry, and producing method thereof
KR100641348B1 (en) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Slurry for cmp and method of fabricating the same and method of polishing substrate
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
EP0514046A1 (en) * 1991-05-07 1992-11-19 Hughes Aircraft Company System for controlling and executing the etching of a wafer
EP0516480A2 (en) * 1991-05-31 1992-12-02 Research Development Corporation Of Japan Method for surface treatment with extra-low-speed ion beam
EP0975016A1 (en) * 1998-07-21 2000-01-26 Yasuhiro Horiike Wafer flattening process and system
US6147004A (en) * 1998-07-21 2000-11-14 Advanced Micro Devices, Inc. Jet vapor reduction of the thickness of process layers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0927482A (en) 1995-07-11 1997-01-28 Speedfam Co Ltd Plasma etching apparatus
JP2002343772A (en) * 2001-05-18 2002-11-29 Speedfam Co Ltd Local plasma etching method
JP3814558B2 (en) * 2002-04-22 2006-08-30 スピードファム株式会社 Position of the local dry etching method and a semiconductor wafer surface - the thickness data processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
EP0514046A1 (en) * 1991-05-07 1992-11-19 Hughes Aircraft Company System for controlling and executing the etching of a wafer
EP0516480A2 (en) * 1991-05-31 1992-12-02 Research Development Corporation Of Japan Method for surface treatment with extra-low-speed ion beam
EP0975016A1 (en) * 1998-07-21 2000-01-26 Yasuhiro Horiike Wafer flattening process and system
US6147004A (en) * 1998-07-21 2000-11-14 Advanced Micro Devices, Inc. Jet vapor reduction of the thickness of process layers

Also Published As

Publication number Publication date Type
EP1229575A2 (en) 2002-08-07 application
JP2002231700A (en) 2002-08-16 application
US6875701B2 (en) 2005-04-05 grant
US20020104825A1 (en) 2002-08-08 application

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