EP1039557A4 - Silicon based conductive material and process for production thereof - Google Patents

Silicon based conductive material and process for production thereof

Info

Publication number
EP1039557A4
EP1039557A4 EP98937838A EP98937838A EP1039557A4 EP 1039557 A4 EP1039557 A4 EP 1039557A4 EP 98937838 A EP98937838 A EP 98937838A EP 98937838 A EP98937838 A EP 98937838A EP 1039557 A4 EP1039557 A4 EP 1039557A4
Authority
EP
European Patent Office
Prior art keywords
production
conductive material
silicon based
based conductive
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98937838A
Other languages
German (de)
French (fr)
Other versions
EP1039557A1 (en
Inventor
Shunichi Haruyama
Osamu Yamashita
Nobuhiro Sadatomi
Tsunekazu Saigou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Metals Ltd
Original Assignee
Neomax Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neomax Co Ltd filed Critical Neomax Co Ltd
Publication of EP1039557A1 publication Critical patent/EP1039557A1/en
Publication of EP1039557A4 publication Critical patent/EP1039557A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49872—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
EP98937838A 1997-10-24 1998-08-14 Silicon based conductive material and process for production thereof Withdrawn EP1039557A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP30993397 1997-10-24
JP30993397 1997-10-24
JP13435498 1998-04-28
JP13435498 1998-04-28
PCT/JP1998/003642 WO1999022411A1 (en) 1997-10-24 1998-08-14 Silicon based conductive material and process for production thereof

Publications (2)

Publication Number Publication Date
EP1039557A1 EP1039557A1 (en) 2000-09-27
EP1039557A4 true EP1039557A4 (en) 2007-02-21

Family

ID=26468487

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98937838A Withdrawn EP1039557A4 (en) 1997-10-24 1998-08-14 Silicon based conductive material and process for production thereof

Country Status (7)

Country Link
US (1) US6506321B1 (en)
EP (1) EP1039557A4 (en)
KR (1) KR100500493B1 (en)
CN (1) CN1196208C (en)
AU (1) AU8649798A (en)
CA (1) CA2307231C (en)
WO (1) WO1999022411A1 (en)

Families Citing this family (29)

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CN100385694C (en) * 1999-03-10 2008-04-30 日立金属株式会社 thermoelectric conversion material and method of producing same
JP3919469B2 (en) * 2001-05-25 2007-05-23 杉原 淳 Thermoelectric generator module made of plastic or glass and manufacturing method thereof
JP2003031860A (en) * 2001-07-19 2003-01-31 Toshiba Corp Thermoelectric material and thermoelectric conversion module
KR101064799B1 (en) * 2003-10-16 2011-09-14 제이에스알 가부시끼가이샤 Composition for forming silicon-cobalt film, silicon-cobalt film and method for forming same
KR100541655B1 (en) 2004-01-07 2006-01-11 삼성전자주식회사 Package circuit board and package using thereof
DE102004039197B4 (en) 2004-08-12 2010-06-17 Siltronic Ag Process for producing doped silicon wafers
EP1796151A1 (en) * 2005-12-09 2007-06-13 Interuniversitair Microelektronica Centrum ( Imec) Low work function metal alloy
CN100407466C (en) * 2005-07-12 2008-07-30 北京科技大学 Method for producing nano-micron porous silicon series thermoelectric material
DE102005047907A1 (en) * 2005-10-06 2007-04-12 Basf Ag Photovoltaic cell with a photovoltaically active semiconductor material contained therein
UA81965C2 (en) * 2006-02-14 2008-02-25 Александра Николаевна Шмирева Integral thin-film module
DE102007039060B4 (en) * 2007-08-17 2019-04-25 Evonik Degussa Gmbh Thermokraft element or Peltier elements made of sintered nanocrystals of silicon, germanium or silicon-germanium alloys
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
TWI485266B (en) * 2009-07-27 2015-05-21 Univ Tokyo Sci Educ Found Aluminum-magnesium-silicon composite material and method for manufacturing the same, and thermoelectric conversion material, thermoelectric conversion element and thermoelectric conversion module using the composite material
CN101798215A (en) * 2010-04-16 2010-08-11 山东大学 Lanthanum and dysprosium co-doped SrTiO3 ceramic material and preparation method thereof
KR101366712B1 (en) * 2011-05-13 2014-02-24 주식회사 엘지화학 New compound semiconductors and their application
EP2708498B1 (en) * 2011-05-13 2017-08-16 LG Chem, Ltd. Novel compound semiconductor and usage for same
US20130307200A1 (en) * 2011-11-02 2013-11-21 John Carberry Sintered Polycrystalline Silicon-based Thermoelectrics
US20130247953A1 (en) * 2012-03-23 2013-09-26 Trustees Of Boston College Electrode materials and configurations for thermoelectric devices
JP6155141B2 (en) * 2013-08-30 2017-06-28 古河電気工業株式会社 Thermoelectric conversion material and method for producing the same
US9741677B1 (en) 2016-03-01 2017-08-22 Infineon Technologies Ag Semiconductor device including antistatic die attach material
JP6740671B2 (en) * 2016-03-31 2020-08-19 東ソー株式会社 Barium silicide bulk polycrystal and its application
CN107604437A (en) * 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 The method that silicate melts are prepared in silica crucible
WO2018043478A1 (en) * 2016-08-31 2018-03-08 住友電気工業株式会社 Thermoelectric conversion material, thermoelectric conversion element and thermoelectric conversion module
JP6768556B2 (en) * 2017-02-27 2020-10-14 株式会社日立製作所 Thermoelectric conversion material and its manufacturing method
JP6957916B2 (en) * 2017-03-21 2021-11-02 三菱マテリアル株式会社 Thermoelectric conversion module
JP7157993B2 (en) * 2018-01-16 2022-10-21 学校法人東京理科大学 Polycrystalline magnesium silicide and its use
US11716903B2 (en) * 2018-09-03 2023-08-01 Sumitomo Electric Industries, Ltd. Thermoelectric conversion element, thermoelectric conversion module, optical sensor, method of producing thermoelectric conversion material, and method of producing thermoelectric conversion element
KR20200107852A (en) * 2019-03-08 2020-09-16 주식회사 엘지화학 A sulfur-doped silicon negative electrode material, a method for manufacturing the same, a negative electrode for lithium secondary battery including the same, and a lithium secondary battery including the negative electrode
CN111816852B (en) * 2020-06-29 2022-04-29 瑞声科技（南京）有限公司 Preparation method of silicon-based composite negative electrode material

Citations (10)

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Publication number Priority date Publication date Assignee Title
GB1265318A (en) * 1968-05-14 1972-03-01
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
US4521794A (en) * 1980-09-30 1985-06-04 Nippon Telegraph & Telephone Public Corporation Electrode and semiconductor device provided with the electrode
GB2179790A (en) * 1985-08-26 1987-03-11 Anritsu Corp Thin film conductor
EP0235702A1 (en) * 1986-02-21 1987-09-09 Kabushiki Kaisha Komatsu Seisakusho Thermoelectric material for low temperature use and method of manufacturing the same
JPS63310712A (en) * 1987-06-15 1988-12-19 Mitsui Toatsu Chem Inc Novel solid substance
JPS63315510A (en) * 1987-06-17 1988-12-23 Mitsui Toatsu Chem Inc Novel thin film substance
US4849033A (en) * 1988-04-21 1989-07-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
JPH08306970A (en) * 1995-03-03 1996-11-22 Yamaha Corp Manufacture of thermoelectric cooling material
US5763293A (en) * 1996-03-04 1998-06-09 Yamaha Corporation Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing

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US4063210A (en) * 1976-02-17 1977-12-13 General Motors Corporation Temperature independent semiconductor resistor and method of making same
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
JPS63119589A (en) 1986-11-07 1988-05-24 Hitachi Ltd Manufacture of thermoelectric material
JPH01276678A (en) 1988-04-27 1989-11-07 Idemitsu Petrochem Co Ltd Thermoelectric device
JPH0732320B2 (en) * 1988-04-28 1995-04-10 茂一 渋谷 Anechoic chamber with reflector
JPH038707A (en) 1989-06-02 1991-01-16 Mitsubishi Materials Corp N-type fe silicide thermoelectric conversion material
JPH0374885A (en) * 1989-08-15 1991-03-29 Mitsubishi Materials Corp P-type fe silicide thermoelectric conversion material
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JPH04137619A (en) 1990-09-28 1992-05-12 Canon Inc Manufacture of semiconductor device
JPH07321044A (en) 1994-05-20 1995-12-08 Fujitsu Ltd Method of manufacturing semiconductor device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265318A (en) * 1968-05-14 1972-03-01
US4521794A (en) * 1980-09-30 1985-06-04 Nippon Telegraph & Telephone Public Corporation Electrode and semiconductor device provided with the electrode
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
GB2179790A (en) * 1985-08-26 1987-03-11 Anritsu Corp Thin film conductor
EP0235702A1 (en) * 1986-02-21 1987-09-09 Kabushiki Kaisha Komatsu Seisakusho Thermoelectric material for low temperature use and method of manufacturing the same
JPS63310712A (en) * 1987-06-15 1988-12-19 Mitsui Toatsu Chem Inc Novel solid substance
JPS63315510A (en) * 1987-06-17 1988-12-23 Mitsui Toatsu Chem Inc Novel thin film substance
US4849033A (en) * 1988-04-21 1989-07-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
JPH08306970A (en) * 1995-03-03 1996-11-22 Yamaha Corp Manufacture of thermoelectric cooling material
US5763293A (en) * 1996-03-04 1998-06-09 Yamaha Corporation Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BRINSON M E ET AL: "Thermal conductivity and thermoelectric power of heavily doped n-type silicon", JOURNAL OF PHYSICS C (SOLID STATE PHYSICS) UK, vol. 3, no. 3, March 1970 (1970-03-01), pages 483 - 491, XP002401037, ISSN: 0022-3719 *
DISMUKES J P ET AL: "Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300[deg.]k", JOURNAL OF APPLIED PHYSICS USA, vol. 35, no. 10, October 1964 (1964-10-01), pages 2899 - 2907, XP002401831 *
See also references of WO9922411A1 *

Also Published As

Publication number Publication date
CA2307231A1 (en) 1999-05-06
AU8649798A (en) 1999-05-17
CA2307231C (en) 2006-06-20
KR100500493B1 (en) 2005-07-14
WO1999022411A1 (en) 1999-05-06
US6506321B1 (en) 2003-01-14
CN1196208C (en) 2005-04-06
CN1280707A (en) 2001-01-17
EP1039557A1 (en) 2000-09-27
KR20010031395A (en) 2001-04-16

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