EP0863414A3 - Process for fabricating structurally robust optical coatings - Google Patents

Process for fabricating structurally robust optical coatings Download PDF

Info

Publication number
EP0863414A3
EP0863414A3 EP98301622A EP98301622A EP0863414A3 EP 0863414 A3 EP0863414 A3 EP 0863414A3 EP 98301622 A EP98301622 A EP 98301622A EP 98301622 A EP98301622 A EP 98301622A EP 0863414 A3 EP0863414 A3 EP 0863414A3
Authority
EP
European Patent Office
Prior art keywords
epitaxy
molecular
temperature
structurally robust
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98301622A
Other languages
German (de)
French (fr)
Other versions
EP0863414A2 (en
Inventor
Myung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US08/811,755 priority Critical patent/US5785756A/en
Priority to US811755 priority
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Publication of EP0863414A2 publication Critical patent/EP0863414A2/en
Publication of EP0863414A3 publication Critical patent/EP0863414A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/08Germanium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/12Halides

Abstract

A novel molecular beam epitaxy deposition process for precisely growing structurally robust films and coatings containing germanium and various fluoride compounds for use as an optical filter. The process comprises depositing two (2) materials having different indices of refraction via molecular beam epitaxy at a temperature significantly lower than the optimal growth temperature. At such lower temperature, layers of the respective compounds are grown, via molecular beam epitaxy, such that the layers contain large concentrations of dislocations. Once the film or coating has been grown to the desired thickness, the material deposited is allowed to cool to room temperature and may then be used in a wide range of applications.
EP98301622A 1997-03-06 1998-03-05 Process for fabricating structurally robust optical coatings Withdrawn EP0863414A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US08/811,755 US5785756A (en) 1997-03-06 1997-03-06 Process for fabricating structurally robust optical coatings
US811755 1997-03-06

Publications (2)

Publication Number Publication Date
EP0863414A2 EP0863414A2 (en) 1998-09-09
EP0863414A3 true EP0863414A3 (en) 1999-07-28

Family

ID=25207482

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98301622A Withdrawn EP0863414A3 (en) 1997-03-06 1998-03-05 Process for fabricating structurally robust optical coatings

Country Status (2)

Country Link
US (1) US5785756A (en)
EP (1) EP0863414A3 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1229356A3 (en) * 2001-01-31 2004-01-21 Planar Systems, Inc. Methods and apparatus for the production of optical filters
US6678082B2 (en) 2001-09-12 2004-01-13 Harris Corporation Electro-optical component including a fluorinated poly(phenylene ether ketone) protective coating and related methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831307A (en) * 1981-08-20 1983-02-24 Tokyo Optical Co Ltd Interference filter
US4935385A (en) * 1988-07-22 1990-06-19 Xerox Corporation Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy
US5229332A (en) * 1992-02-25 1993-07-20 Texas Instruments Incorporated Method for the growth of epitaxial metal-insulator-metal-semiconductor structures
US5453399A (en) * 1993-10-06 1995-09-26 Texas Instruments Incorporated Method of making semiconductor-on-insulator structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870032A (en) * 1987-01-14 1989-09-26 American Telephone And Telegraph Company, At&T Bell Laboratories Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
JPH0717477B2 (en) * 1989-03-15 1995-03-01 シャープ株式会社 Epitaxial growth method of compound semiconductor
FR2650704B1 (en) * 1989-08-01 1994-05-06 Thomson Csf Process for the manufacture by epitaxy of monocrystalline layers of materials with different mesh parameters
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5458084A (en) * 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831307A (en) * 1981-08-20 1983-02-24 Tokyo Optical Co Ltd Interference filter
US4935385A (en) * 1988-07-22 1990-06-19 Xerox Corporation Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy
US5229332A (en) * 1992-02-25 1993-07-20 Texas Instruments Incorporated Method for the growth of epitaxial metal-insulator-metal-semiconductor structures
US5453399A (en) * 1993-10-06 1995-09-26 Texas Instruments Incorporated Method of making semiconductor-on-insulator structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIYOHISA FUJINAGA: "LOW-TEMPERATURE HETEROEPITAXY OF GE ON SI BY GEH4 GAS LOW-PRESSURE CHEMICAL VAPOR DEPOSITION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 9, no. 3, 1 May 1991 (1991-05-01), pages 1511 - 1516, XP000367935 *
PATENT ABSTRACTS OF JAPAN vol. 007, no. 109 (P - 196) 12 May 1983 (1983-05-12) *

Also Published As

Publication number Publication date
EP0863414A2 (en) 1998-09-09
US5785756A (en) 1998-07-28

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