EP0814396A3 - Circuit pour générer une tension de référence - Google Patents

Circuit pour générer une tension de référence Download PDF

Info

Publication number
EP0814396A3
EP0814396A3 EP97109351A EP97109351A EP0814396A3 EP 0814396 A3 EP0814396 A3 EP 0814396A3 EP 97109351 A EP97109351 A EP 97109351A EP 97109351 A EP97109351 A EP 97109351A EP 0814396 A3 EP0814396 A3 EP 0814396A3
Authority
EP
European Patent Office
Prior art keywords
transistor
generating
circuit
reference potential
voltage reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97109351A
Other languages
German (de)
English (en)
Other versions
EP0814396A2 (fr
EP0814396B1 (fr
Inventor
Stephan Weber
Udo Matter
Stefan Heinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0814396A2 publication Critical patent/EP0814396A2/fr
Publication of EP0814396A3 publication Critical patent/EP0814396A3/fr
Application granted granted Critical
Publication of EP0814396B1 publication Critical patent/EP0814396B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/265Current mirrors using bipolar transistors only
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
EP97109351A 1996-06-20 1997-06-09 Circuit pour générer une tension de référence Expired - Lifetime EP0814396B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19624676 1996-06-20
DE19624676A DE19624676C1 (de) 1996-06-20 1996-06-20 Schaltungsanordnung zur Erzeugung eines Referenzpotentials

Publications (3)

Publication Number Publication Date
EP0814396A2 EP0814396A2 (fr) 1997-12-29
EP0814396A3 true EP0814396A3 (fr) 1998-12-09
EP0814396B1 EP0814396B1 (fr) 2000-09-27

Family

ID=7797508

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97109351A Expired - Lifetime EP0814396B1 (fr) 1996-06-20 1997-06-09 Circuit pour générer une tension de référence

Country Status (3)

Country Link
US (1) US5969566A (fr)
EP (1) EP0814396B1 (fr)
DE (2) DE19624676C1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184769A3 (fr) * 2000-08-09 2004-09-22 Mitsubishi Denki Kabushiki Kaisha Générateur de tension, circuit de sortie de détection d'erreurs, et générateur de courant
JP4212036B2 (ja) * 2003-06-19 2009-01-21 ローム株式会社 定電圧発生器
EP1501001A1 (fr) * 2003-07-22 2005-01-26 STMicroelectronics Limited Circuit de polarisation
JP4721726B2 (ja) * 2005-02-25 2011-07-13 富士通セミコンダクター株式会社 差動増幅器
US7893754B1 (en) * 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit
US8634218B2 (en) 2009-10-06 2014-01-21 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
US8310845B2 (en) 2010-02-10 2012-11-13 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
US9455621B2 (en) 2013-08-28 2016-09-27 Power Integrations, Inc. Controller IC with zero-crossing detector and capacitor discharge switching element
US9667154B2 (en) 2015-09-18 2017-05-30 Power Integrations, Inc. Demand-controlled, low standby power linear shunt regulator
US9602009B1 (en) 2015-12-08 2017-03-21 Power Integrations, Inc. Low voltage, closed loop controlled energy storage circuit
US9629218B1 (en) 2015-12-28 2017-04-18 Power Integrations, Inc. Thermal protection for LED bleeder in fault condition

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0396996A2 (fr) * 1989-05-08 1990-11-14 National Semiconductor Corporation Circuit de seuil à bande interdite avec hystérésis
EP0411657A1 (fr) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Circuit à tension constante
US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
EP0620515A1 (fr) * 1993-04-14 1994-10-19 Texas Instruments Deutschland Gmbh Source de tension de référence du type Bandgap
EP0656575A1 (fr) * 1993-12-03 1995-06-07 Koninklijke Philips Electronics N.V. Source de référence de courant du type Bandgap avec compensation pour l'étalement du courant de saturation d'un transistor bipolaire
US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0811203B2 (ja) * 1986-05-13 1996-02-07 株式会社スギノマシン 超高圧液体噴射装置
JP2575702B2 (ja) * 1987-05-09 1997-01-29 富士通 株式会社 シンセサイザ・チュ−ナ
US5013941A (en) * 1989-08-17 1991-05-07 National Semiconductor Corporation TTL to ECL/CML translator circuit
JPH03179514A (ja) * 1989-11-02 1991-08-05 Toshiba Corp 定電圧回路
FR2672705B1 (fr) * 1991-02-07 1993-06-04 Valeo Equip Electr Moteur Circuit generateur d'une tension de reference variable en fonction de la temperature, notamment pour regulateur de la tension de charge d'une batterie par un alternateur.
US5381083A (en) * 1992-07-15 1995-01-10 Sharp Kabushiki Kaisha Constant-current power-supply circuit formed on an IC
JP2953226B2 (ja) * 1992-12-11 1999-09-27 株式会社デンソー 基準電圧発生回路
FR2711258A1 (fr) * 1993-10-13 1995-04-21 Philips Composants Circuit générateur de tension stabilisée du type bandgap.
DE19621110C1 (de) * 1996-05-24 1997-06-12 Siemens Ag Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
EP0396996A2 (fr) * 1989-05-08 1990-11-14 National Semiconductor Corporation Circuit de seuil à bande interdite avec hystérésis
EP0411657A1 (fr) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Circuit à tension constante
US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit
EP0620515A1 (fr) * 1993-04-14 1994-10-19 Texas Instruments Deutschland Gmbh Source de tension de référence du type Bandgap
EP0656575A1 (fr) * 1993-12-03 1995-06-07 Koninklijke Philips Electronics N.V. Source de référence de courant du type Bandgap avec compensation pour l'étalement du courant de saturation d'un transistor bipolaire

Also Published As

Publication number Publication date
US5969566A (en) 1999-10-19
EP0814396A2 (fr) 1997-12-29
DE19624676C1 (de) 1997-10-02
DE59702395D1 (de) 2000-11-02
EP0814396B1 (fr) 2000-09-27

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