EP0578512B1 - Dispositif à émission de champ monocristallin - Google Patents
Dispositif à émission de champ monocristallin Download PDFInfo
- Publication number
- EP0578512B1 EP0578512B1 EP93305424A EP93305424A EP0578512B1 EP 0578512 B1 EP0578512 B1 EP 0578512B1 EP 93305424 A EP93305424 A EP 93305424A EP 93305424 A EP93305424 A EP 93305424A EP 0578512 B1 EP0578512 B1 EP 0578512B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- single crystal
- emitter
- thin film
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
Definitions
- This invention pertains to the field of field emission devices, and particularly relates to a device in which some or all of the electrodes are formed from single crystal material.
- Field emission devices are microscopic electrical components which selectively emit electrons.
- Such devices 100 as shown in Figures 1a and 1b, generally comprise two electrodes: an emitter electrode 103 for emitting electrons and a gate electrode 104 for controlling the flow of electrons from the emitter electrode 103 depending on the electrical charge present at the gate 104.
- the electrodes are typically mounted on some kind of substrate 101 or 105 to provide support for the device, with a gap between the electrodes.
- a third electrode, the anode (not shown in Figures 1a and 1b), may also be present to receive the emitted electrons, although in some devices the gate electrode 104 serves as the anode.
- Field emission devices have been known for several years to have many potential applications in commercial and military industry, such as: high-definition television; flat-panel video displays; radiation-hard thermally insensitive integrated circuits; microsensors; fast electron sources for vacuum tubes; and electron microscopes.
- high-definition television flat-panel video displays
- radiation-hard thermally insensitive integrated circuits microsensors
- fast electron sources for vacuum tubes and electron microscopes.
- Three such problems are 1) their extreme sensitivity to damage, 2) their instability evidenced by a tendency towards microstructure changes with use, and 3) the difficulty of manufacturing such devices with sufficient uniformity and reproducibility.
- the following references detail these problems, and describe the state of the prior art in the manufacture of emission devices.
- U.S. patent 3,947,716 discloses a field emission tip and process wherein a metal adsorbate is selectively deposited on the tip to create a selectively faceted tip with the emitting planar surface having a reduced work function and the non-emitting planar surfaces having an increased work function, thus yielding improved performance.
- the patent disdoses the use of a single crystal to fabricate emission tips, but the reason for single crystal use in emission tips has traditionally been to facilitate fabrication of a cone-shaped emitter.
- the patent does not mention the use of single crystals for the other electrodes of the device, nor does it suggest the use of single crystals in conjunction with thin film emitters or for stability and arc damage resistance.
- J.E. Wolfe "Operational Experience with Zirconiated T-F Emitters", L Vac., Sci. Technology v. 16, p. 1704 (1979), discusses the characteristics of an electron gun which uses a cathode-filament structure with a needle-shaped cathode. It discusses some techniques for improving performance and extending device lifetime, but does not mention grain boundaries or single-crystal structures.
- Figure 1a shows a well-known cone emitter structure, in which a cone-shaped emitter electrode 103 is mounted on a conducting substrate 101 (as stated in "Thin Film Emitter Development", “virtually all structures reported in the literature use conducting substrates.”).
- Figure lb shows the newer “edge emitter” structure discussed in “Thin Film Emitter Development", in which an edge of the emitter 103 protrudes from between an insulator 102 and a metal overlay 106.
- This structure usually employs an insulating substrate 105.
- Edge emitters offer several potential advantages over cone-shaped emitters, including improved reproducibility and uniformity, high current densities, and high frequency performance. Even with these advantages, however, the three problems mentioned above persist.
- WO-A-92/04732 discloses a field emission device comprising an emitter electrode for emitting electrons and a gate electrode for controlling the electron emission formed from a single crystal wherein there is a gap between the emitter electrode and the gate electrode.
- the present invention is set out in claim 1.
- FIG. 2 there is shown a sectional diagram of a preferred embodiment of a field emission device 100 according to the present invention.
- Two insulators 102 made from, e.g. , aluminum gallium arsenide are deposited on an insulating substrate 105 made from, e.g. , gallium arsenide.
- the insulators 102 are shown spaced apart, but they need not be.
- the emitter and gate electrodes, 103 and 104 respectively, are formed from a single thin film of e.g. , heavily doped gallium arsenide and rest on the insulators 102, so that a gap 203 is formed between the two electrodes.
- Ohmic contacts 204 are fastened to the emitter and gate electrodes to facilitate electrical contact with the device.
- An anode electrode 205 separated from the other components of the device and also formed from a single crystal, may also be present to collect the emitted electrons, or, alternatively, the gate electrode 104 may function as an anode.
- FIG. 3a the starting material for the process is shown.
- an insulating substrate 105 of gallium arsenide Deposited on the substrate is a buffer layer 301 of aluminum gallium arsenide, approximately 5 microns thick.
- a single crystal thin film (approximately 1000 angstroms thick) of conducting material 302, preferably heavily doped gallium arsenide. Other materials and thicknesses may be used.
- a layer of photoresist 303 is applied on top of the conducting layer 302, according to well-known device manufacturing techniques.
- the photoresist is applied in a pattern which will eventually define the placement of the electrodes 103 and 104 on the final device, by leaving gaps where the conducting material 302 is to be removed.
- the conducting layer 302 is etched according to well-known device manufacturing techniques. Wherever photoresist 303 is present, the conducting layer 302 remains intact, but where there is a gap in the photoresist 303, the conducting layer 302 is etched away. In this way, two electrodes 103 and 104 are formed, with a gap 203 between them. Electrode 103 will eventually become the emitter and electrode 104 will become the gate.
- the buffer layer 301 is etched out under the gap 203, so that there is some overhang of the electrodes 103 and 104.
- the buffer layer 301 thus becomes two aluminum gallium arsenide insulators 102.
- the buffer layer may not be etched out, or may only be partially etched out, so that insulators 102 are touching.
- ohmic contacts 204 are attached to the electrodes 103 and 104 so that electrical connections can be made to the device 100.
- An anode electrode 205 is also shown, although this is optional; if no anode 205 is present, the gate electrode 104 acts as an anode.
- the anode 205 if present, may be made of heavily doped gallium arsenide, or gold, or any other conducting material. It may be formed from a single crystal, although this is not necessary. It may or may not be formed from a thin film, and may even be formed from the same film as the other two electrodes (for example, in a coplanar arrangement).
- the emitter and gate electrodes, 103 and 104 respectively may be formed from two separate single crystal thin films, rather than from one piece 302.
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Junction Field-Effect Transistors (AREA)
Claims (7)
- Dispositif à émission de champ (100) comprenant une électrode émettrice (103) pour émettre des électrons et une électrode de grille (104) pour commander l'émission d'électrons formée d'un monocristal, dans lequel il y un intervalle (203) entre l'électrode émettrice et l'électrode de grille, caractérisé en ce que l'électrode émettrice est un monocristal en couche mince, le monocristal de l'électrode de grille est une couche mince, chaque électrode étant formée d'une couche mince cristalline n'ayant pas de limites de grains, ce qui a pour effet d'améliorer la stabilité et la résistance à la formation d'arc dans ledit dispositif.
- Dispositif selon la revendication 1, dans lequel la couche mince est formée à partir d'arséniure de gallium.
- Dispositif selon la revendication 1 ou 2, comprenant par ailleurs une électrode anodique monocristalline (205) espacée de l'électrode émettrice pour recevoir les électrons de l'électrode émettrice.
- Dispositif selon la revendication 3, dans lequel l'électrode 3, dans lequel l'électrode anodique est formée en relation coplanaire avec le monocristal mentionné en premier lieu.
- Dispositif selon la revendication 4, dans lequel ladite anode monocristalline est une électrode séparée disposée à proximité distale de l'alignement émetteur-grille.
- Dispositif selon l'une quelconque des revendications précédentes, dans lequel l'électrode émettrice est formée du même monocristal que celui de l'électrode de grille.
- Dispositif à émission de champ selon la revendication 2 ou l'une quelconque des revendications qui en dépendent, comprenant par ailleurs un substrat isolant (105), un premier isolant (102) monté sur le substrat, un second isolant (102) monté sur le substrat au voisinage du premier isolant, et une couche de recouvrement métallique montée sur l'électrode émettrice, qui est montée sur le premier isolant de telle sorte que l'électrode émettrice fasse saillie au-delà du bord du revêtement métallique, ladite électrode de grille étant montée sur le second isolant.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91095792A | 1992-07-09 | 1992-07-09 | |
US910957 | 1992-07-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0578512A1 EP0578512A1 (fr) | 1994-01-12 |
EP0578512B1 true EP0578512B1 (fr) | 1998-11-11 |
Family
ID=25429563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93305424A Expired - Lifetime EP0578512B1 (fr) | 1992-07-09 | 1993-07-09 | Dispositif à émission de champ monocristallin |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0578512B1 (fr) |
JP (1) | JPH0697458A (fr) |
DE (1) | DE69322005T2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587628A (en) * | 1995-04-21 | 1996-12-24 | Kuo; Huei-Pei | Field emitter with a tapered gate for flat panel display |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004000732A1 (fr) * | 2002-06-19 | 2003-12-31 | Unilever Plc | Systeme de purification d'eau |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2574500B2 (ja) * | 1990-03-01 | 1997-01-22 | 松下電器産業株式会社 | プレーナ型冷陰極の製造方法 |
US5214347A (en) * | 1990-06-08 | 1993-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Layered thin-edged field-emitter device |
WO1992004732A1 (fr) * | 1990-09-07 | 1992-03-19 | Motorola, Inc. | Dispositif d'emission de champ utilisant une couche de silicium monocristal |
-
1993
- 1993-07-09 EP EP93305424A patent/EP0578512B1/fr not_active Expired - Lifetime
- 1993-07-09 JP JP19299193A patent/JPH0697458A/ja active Pending
- 1993-07-09 DE DE1993622005 patent/DE69322005T2/de not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004000732A1 (fr) * | 2002-06-19 | 2003-12-31 | Unilever Plc | Systeme de purification d'eau |
Also Published As
Publication number | Publication date |
---|---|
JPH0697458A (ja) | 1994-04-08 |
DE69322005D1 (de) | 1998-12-17 |
EP0578512A1 (fr) | 1994-01-12 |
DE69322005T2 (de) | 1999-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5814924A (en) | Field emission display device having TFT switched field emission devices | |
US5341063A (en) | Field emitter with diamond emission tips | |
US5229682A (en) | Field electron emission device | |
US5186670A (en) | Method to form self-aligned gate structures and focus rings | |
US7504767B2 (en) | Electrode structures, display devices containing the same | |
US5601966A (en) | Methods for fabricating flat panel display systems and components | |
US5259799A (en) | Method to form self-aligned gate structures and focus rings | |
US5653619A (en) | Method to form self-aligned gate structures and focus rings | |
US5228878A (en) | Field electron emission device production method | |
US5378182A (en) | Self-aligned process for gated field emitters | |
US5610471A (en) | Single field emission device | |
EP0434330A2 (fr) | Dispositif à émission de champ et son procédé de fabrication | |
US5791962A (en) | Methods for manufacturing flat cold cathode arrays | |
US5895580A (en) | Method for manufacturing cold cathode arrays | |
US5828288A (en) | Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications | |
EP0578512B1 (fr) | Dispositif à émission de champ monocristallin | |
US6777169B2 (en) | Method of forming emitter tips for use in a field emission display | |
JP3086445B2 (ja) | 電界放出素子の形成方法 | |
JP3033178B2 (ja) | 電界放出型エミッタ | |
US6144145A (en) | High performance field emitter and method of producing the same | |
KR100257568B1 (ko) | 전계방출표시 소자의 필드 에미터 어레이 형성방법 | |
JP3502883B2 (ja) | 冷電子放出素子及びその製造方法 | |
KR100282261B1 (ko) | 전계방출 캐소드 어레이 및 이의 제조방법 | |
KR100290136B1 (ko) | 전계방출소자제조방법 | |
KR960010426B1 (ko) | 디스크-엣지형 전계 전자 방출 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB NL |
|
17P | Request for examination filed |
Effective date: 19940621 |
|
17Q | First examination report despatched |
Effective date: 19940907 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB NL |
|
REF | Corresponds to: |
Ref document number: 69322005 Country of ref document: DE Date of ref document: 19981217 |
|
ET | Fr: translation filed | ||
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20000619 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20000620 Year of fee payment: 8 Ref country code: GB Payment date: 20000620 Year of fee payment: 8 Ref country code: DE Payment date: 20000620 Year of fee payment: 8 |
|
NLT1 | Nl: modifications of names registered in virtue of documents presented to the patent office pursuant to art. 16 a, paragraph 1 |
Owner name: VARIAN MEDICAL SYSTEMS, INC. |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010709 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020201 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20010709 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020329 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 20020201 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020501 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |