EP0454054A2 - Lamp annealing apparatus and lamp annealing method - Google Patents
Lamp annealing apparatus and lamp annealing method Download PDFInfo
- Publication number
- EP0454054A2 EP0454054A2 EP91106511A EP91106511A EP0454054A2 EP 0454054 A2 EP0454054 A2 EP 0454054A2 EP 91106511 A EP91106511 A EP 91106511A EP 91106511 A EP91106511 A EP 91106511A EP 0454054 A2 EP0454054 A2 EP 0454054A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor wafer
- cooling gas
- cooling
- lamp annealing
- mount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- the present invention relates to lamp annealing apparatus and method, and more particularly to rapid annealing technology which is essential to manufacture a GaAs field effect transistor operating in a microwave range.
- Fig.1 shows a conventional lamp annealing apparatus.
- a temperature of a semiconductor wafer 2 is rapidly raised (heating step) by using lamps 1 such as infrared ray lamps as a heat source, maintaining it at the elevated temperature for a certain time period (steady state step), and temperature is rapidly dropped (cooling step).
- Fig.2 shows this process in which state 1 indicates the heating step, state 2 indicates the steady state step and state 3 indicates the cooling step.
- the lamp Since the lamp is annealed in a short time, the diffusion of injected ions and the evaporation of As on the semiconductor wafer can be prevented.
- the lamp annealing apparatus of the present invention comprises: a mount adopted to receive a semiconductor wafer thereon; a heating lamp arranged in a vicinity of said mount to heat the semiconductor wafer to be mounted on said mount; and cooling gas blow means arranged above the mount to blow fooling gas toward the semiconductor water to be mounted on the mount.
- the cooling gas blow means includes a first blow path for blowing the cooling gas toward a center of the semiconductor water to be mounted on said mount and a second blow path for blowing the cooling gas to a periphery of the semiconductor water.
- cooling gas is blown to a periphery of the semiconductor water in the heating step, and the cooling gas is blown toward a center of the semiconductor water in the steady state step and the cooling step.
- the periphery of the semiconductor wafer is cooled in the heating step of the annealing process and the center of the semiconductor wafer is cooled in the steady state step and the cooling step so that the center and the periphery of the semiconductor wafer are kept at uniform temperatures throughout the annealing process.
- a semiconductor wafer 2 to be annealed is mounted on an auxiliary GaAs substrate 5 (which may be a Si substrate) arranged on a quartz suceptor 4 supported by a rotating shaft 3.
- a group of lamps 1 having far-shaped lamps 1a - 1f arranged in parallel are arranged above the semiconductor wafer 2, and cooling gas flow means 10 is arranged thereabove.
- Each of the lamps 1a - 1f is an infrared ray lump having a tungsten filament longitudinally (normal to the plane of the drawing) arranged at the center of the tube.
- the cooling gas flow means 10 comprises an outer pipe 10a and an inner pipe 10b.
- the cooling gas flow means 10 is shown by a sectional view in Fig.3, and flows of the cooling gas therethrough are shown by arrows. All of those elements are arranged in a chamber 19 in a normal pressure N2 environment. Cooling gas supply means 21 is provided externally of the chamber 19.
- the cooling gas supply means 21 comprises a pump 13, a gas cooling device 14, control valves 15 and 16, and a control unit 17.
- the N2 gas in the chamber 19 is supplied by the pump 13 to the cooling gas flow means 10 as cooling gas though the pipe 18, the gas cooling device 14, the pump 13 and the value 15 or 16.
- the pump 13, the gas cooling device 14 and the valves 15 and 16 are controlled by the controller 17.
- the controller 17 For example, when the valve 15 is opened and the valve 16 is closed, the cooling gas is flown toward the center of the semiconductor wafer 2 through the inner pipe 10b.
- the valve 16 is opened and the valve 15 is closed, the cooling gas is flown toward the periphery of the semiconductor wafer 2 through the outer pipe 10a.
- the temperature of the cooling gas is controlled by the gas cooling device 14 in accordance with a command from the controller 17.
- FIG.4 A construction of the cooling gas flow means 10 is shown in Fig.4. As shown, an outer opening 11 of the outer pipe 10b of the cooling gas flow means 10 spread outward so that the cooling gas to the semiconductor wafer 2 is flown to a wide area. It is not always necessary to spread the openings but the openings may have the some width as other arias so long as the cooling gas is flown to a sufficiently wide area.
- the N2 gas which serves as the cooling gas is blown into the outer pipe 10a and it is discharged from the outer opening 11.
- the heat dispation effect in the periphery of the semiconductor wafer 2 is enhanced so that the overall temperature distribution is kept uniform.
- the N2 gas is flown into the inner pipe 10b and it is discharged from the inner opening 12.
- the heating step, the steady state step and the cooling step take approximately 10 seconds in total. In each step, the overall temperature distribution of the semiconductor wafer is uniform so that the slip line and the warp in the semiconductor wafer are prevented.
- the heat is applied while the semiconductor wafer 2 is rotated so that the overall temperature distribution of the semiconductor wafer is further uniform.
- cooling gas blow means 20 shown in Fig. 5 which comprises four outer pipes 20a, 20b, 20c and 20d and an inner pipe 20e may be used in place of the cooling gas flow means 10 to attain the some effect.
- the tungsten lamps are used as the lamp 1 although other infrared ray lamps may be used.
- the shape of lump may be spherical or ring.
- the cooling gas is selectively blown to the center or the periphery of the semiconductor wafer, although it may be blown to both the center and the periphery of the semiconductor wafer with flow rate control.
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
- The present invention relates to lamp annealing apparatus and method, and more particularly to rapid annealing technology which is essential to manufacture a GaAs field effect transistor operating in a microwave range.
- Fig.1 shows a conventional lamp annealing apparatus. In the rapid annealing by this apparatus, a temperature of a
semiconductor wafer 2 is rapidly raised (heating step) by usinglamps 1 such as infrared ray lamps as a heat source, maintaining it at the elevated temperature for a certain time period (steady state step), and temperature is rapidly dropped (cooling step). Fig.2 shows this process in whichstate 1 indicates the heating step,state 2 indicates the steady state step andstate 3 indicates the cooling step. - Since the lamp is annealed in a short time, the diffusion of injected ions and the evaporation of As on the semiconductor wafer can be prevented.
- However, in the prior art lamp annealing, a slip line or a warp occurs in the semiconductor wafer probably due to a temperature difference between a center and a periphery of the semiconductor water during the rapid heating and the rapid cooling of the semiconductor wafer.
- It is an object of the present invention to provide lamp annealing apparatus and method which does not cause a slip line of a warp in the semiconductor wafer.
- In order to achieve the above object, the lamp annealing apparatus of the present invention comprises: a mount adopted to receive a semiconductor wafer thereon; a heating lamp arranged in a vicinity of said mount to heat the semiconductor wafer to be mounted on said mount; and cooling gas blow means arranged above the mount to blow fooling gas toward the semiconductor water to be mounted on the mount.
- The cooling gas blow means includes a first blow path for blowing the cooling gas toward a center of the semiconductor water to be mounted on said mount and a second blow path for blowing the cooling gas to a periphery of the semiconductor water.
- In the lamp annealing method of the present invention, cooling gas is blown to a periphery of the semiconductor water in the heating step, and the cooling gas is blown toward a center of the semiconductor water in the steady state step and the cooling step.
- In order to analyze a cause of the slip line and the warp which occurred in the prior art, a relationship between a heating time of the semiconductor wafer and temperature rises at various portions of the semiconductor wafer was investigated. According to the analysis, a periphery of the semiconductor wafer is more easily heated than a center thereof in the heating step. and the periphery of the semiconductor wafer is more easily cooled them the center in the steady state step and the cooling step.
- As seen from the above analysis, in the present apparatus and method, the periphery of the semiconductor wafer is cooled in the heating step of the annealing process and the center of the semiconductor wafer is cooled in the steady state step and the cooling step so that the center and the periphery of the semiconductor wafer are kept at uniform temperatures throughout the annealing process.
- The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention.
- Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
-
- Fig.1 shows a conventional heat radiation annealing apparatus,
- Fig.2 shows a relationship between a heating time of a semiconductor wafer and temperature rises at various portions of the semiconductor wafer,
- Fig.3 shows a heat radiation annealing apparatus in accordance with one embodiment of the present invention,
- Fig.4 shows a perspective view of the embodiment of the present invention, and
- Fig.5 shows a perspective view of a modification of the present invention.
- As shown in Fig.3, a
semiconductor wafer 2 to be annealed is mounted on an auxiliary GaAs substrate 5 (which may be a Si substrate) arranged on aquartz suceptor 4 supported by a rotatingshaft 3. A group oflamps 1 having far-shaped lamps 1a - 1f arranged in parallel are arranged above thesemiconductor wafer 2, and cooling gas flow means 10 is arranged thereabove. Each of thelamps 1a - 1f is an infrared ray lump having a tungsten filament longitudinally (normal to the plane of the drawing) arranged at the center of the tube. The cooling gas flow means 10 comprises an outer pipe 10a and an inner pipe 10b. The cooling gas flow means 10 is shown by a sectional view in Fig.3, and flows of the cooling gas therethrough are shown by arrows. All of those elements are arranged in achamber 19 in a normal pressure N₂ environment. Cooling gas supply means 21 is provided externally of thechamber 19. The cooling gas supply means 21 comprises a pump 13, a gas cooling device 14, control valves 15 and 16, and acontrol unit 17. - The N₂ gas in the
chamber 19 is supplied by the pump 13 to the cooling gas flow means 10 as cooling gas though the pipe 18, the gas cooling device 14, the pump 13 and the value 15 or 16. The pump 13, the gas cooling device 14 and the valves 15 and 16 are controlled by thecontroller 17. For example, when the valve 15 is opened and the valve 16 is closed, the cooling gas is flown toward the center of the semiconductor wafer 2 through the inner pipe 10b. On the contrary, when the valve 16 is opened and the valve 15 is closed, the cooling gas is flown toward the periphery of the semiconductor wafer 2 through the outer pipe 10a. The temperature of the cooling gas is controlled by the gas cooling device 14 in accordance with a command from thecontroller 17. - A construction of the cooling gas flow means 10 is shown in Fig.4. As shown, an
outer opening 11 of the outer pipe 10b of the cooling gas flow means 10 spread outward so that the cooling gas to thesemiconductor wafer 2 is flown to a wide area. It is not always necessary to spread the openings but the openings may have the some width as other arias so long as the cooling gas is flown to a sufficiently wide area. - In the heating step in which the temperature of the
semiconductor wafer 2 is raised from a room temperature to 950°C - 1000°C by the heat dissipation from thelamps 1, the N₂ gas which serves as the cooling gas is blown into the outer pipe 10a and it is discharged from theouter opening 11. As a result, the heat dispation effect in the periphery of thesemiconductor wafer 2 is enhanced so that the overall temperature distribution is kept uniform. - In the steady state step in which the temperature of the
semiconductor wafer 2 is kept constant for 2 - 3 seconds, and in the cooling step in which the temperature of thesemiconductor wager 2 is rapidly dropped, the N₂ gas is flown into the inner pipe 10b and it is discharged from the inner opening 12. As a result, the heat dissipation effect at the center of thesemiconductor wafer 2 is enhanced so that the overall temperature distribution is uniform. The heating step, the steady state step and the cooling step take approximately 10 seconds in total. In each step, the overall temperature distribution of the semiconductor wafer is uniform so that the slip line and the warp in the semiconductor wafer are prevented. - In the present embodiment, the heat is applied while the
semiconductor wafer 2 is rotated so that the overall temperature distribution of the semiconductor wafer is further uniform. - In a modification, cooling gas blow means 20 shown in Fig. 5 which comprises four outer pipes 20a, 20b, 20c and 20d and an inner pipe 20e may be used in place of the cooling gas flow means 10 to attain the some effect.
- In the present embodiment, the tungsten lamps are used as the
lamp 1 although other infrared ray lamps may be used. The shape of lump may be spherical or ring. - In the present embodiment, the cooling gas is selectively blown to the center or the periphery of the semiconductor wafer, although it may be blown to both the center and the periphery of the semiconductor wafer with flow rate control.
- From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (4)
- A lamp annealing apparatus comprising:
a mount adopted to receive a semiconductor wafer thereon;
a heating lamp arranged in a vicinity of said mount to heat the semiconductor wafer to be mounted on said mount; and
cooling gas blow means arranged above said mount to blow cooling gas toward the semiconductor wafer to be mounted on said mount;
said cooling gas blow means including a first blow path for blowing the cooling gas toward a center of the semiconductor wafer to be mounted on said mount and a second blow path for flowing the cooling gas to a periphery of the semiconductor wafer. - A lamp annealing apparatus according to Claim 1, further comprising means for controlling flow rates of the cooling gas flown through said first blow path and said second flow path of said cooling gas flow means.
- A lamp annealing apparatus according to Claim 2, wherein said cooling gas flow rate control means controls to flow the cooling gas selectively through said first blow path or through said second blow path.
- A lamp annealing method for a semiconductor wafer comprising a heating step, a steady state step and a cooling step, characterized by that:
cooling gas is flown to a periphery of the semiconductor wafer in said heating step, and
the cooling gas is flown toward a center of the semiconductor wafer in said steady state step and said cooling step.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP106916/90 | 1990-04-23 | ||
JP10691690A JPH045822A (en) | 1990-04-23 | 1990-04-23 | Apparatus and method for lamp annealing |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0454054A2 true EP0454054A2 (en) | 1991-10-30 |
EP0454054A3 EP0454054A3 (en) | 1992-03-18 |
EP0454054B1 EP0454054B1 (en) | 1996-01-10 |
Family
ID=14445754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19910106511 Expired - Lifetime EP0454054B1 (en) | 1990-04-23 | 1991-04-23 | Lamp annealing apparatus and lamp annealing method |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0454054B1 (en) |
JP (1) | JPH045822A (en) |
CA (1) | CA2040946A1 (en) |
DE (1) | DE69116205T2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5781693A (en) * | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US6348417B1 (en) | 1998-04-03 | 2002-02-19 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
US6514073B1 (en) * | 1997-05-20 | 2003-02-04 | Tokyo Electron Limited | Resist processing method and resist processing apparatus |
US7037797B1 (en) | 2000-03-17 | 2006-05-02 | Mattson Technology, Inc. | Localized heating and cooling of substrates |
DE102008012931A1 (en) * | 2008-03-06 | 2009-09-17 | Vtd Vakuumtechnik Dresden Gmbh | Method for cooling of substrates in a treatment chamber, comprises subjecting the substrate to a heat treatment, where the substrates are arranged as substrate arrangement on a substrate carrier rotatable around an axis |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4870604B2 (en) * | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | Vapor growth equipment |
JP5456257B2 (en) * | 2008-01-08 | 2014-03-26 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
JP2014204017A (en) * | 2013-04-08 | 2014-10-27 | シンフォニアテクノロジー株式会社 | Reception device of workpiece |
JP2014204018A (en) * | 2013-04-08 | 2014-10-27 | シンフォニアテクノロジー株式会社 | Cooling unit of workpiece |
TWI569349B (en) * | 2013-09-27 | 2017-02-01 | 斯克林集團公司 | Substrate processing apparatus and substrate processing method |
JP2015103726A (en) | 2013-11-27 | 2015-06-04 | 東京エレクトロン株式会社 | Microwave heat treatment device and microwave heat treatment method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4221956A (en) * | 1978-06-21 | 1980-09-09 | General Electric Company | Apparatus for practising temperature gradient zone melting |
US4830700A (en) * | 1987-07-16 | 1989-05-16 | Texas Instruments Incorporated | Processing apparatus and method |
-
1990
- 1990-04-23 JP JP10691690A patent/JPH045822A/en active Pending
-
1991
- 1991-04-22 CA CA 2040946 patent/CA2040946A1/en not_active Abandoned
- 1991-04-23 EP EP19910106511 patent/EP0454054B1/en not_active Expired - Lifetime
- 1991-04-23 DE DE1991616205 patent/DE69116205T2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4221956A (en) * | 1978-06-21 | 1980-09-09 | General Electric Company | Apparatus for practising temperature gradient zone melting |
US4830700A (en) * | 1987-07-16 | 1989-05-16 | Texas Instruments Incorporated | Processing apparatus and method |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5781693A (en) * | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US6514073B1 (en) * | 1997-05-20 | 2003-02-04 | Tokyo Electron Limited | Resist processing method and resist processing apparatus |
US6348417B1 (en) | 1998-04-03 | 2002-02-19 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
US6391116B2 (en) | 1998-04-03 | 2002-05-21 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
KR100634642B1 (en) * | 1998-11-20 | 2006-10-16 | 스티그 알티피 시스템즈, 인코포레이티드 | Fast heating and cooling apparatus for semiconductor wafers |
US7037797B1 (en) | 2000-03-17 | 2006-05-02 | Mattson Technology, Inc. | Localized heating and cooling of substrates |
DE102008012931A1 (en) * | 2008-03-06 | 2009-09-17 | Vtd Vakuumtechnik Dresden Gmbh | Method for cooling of substrates in a treatment chamber, comprises subjecting the substrate to a heat treatment, where the substrates are arranged as substrate arrangement on a substrate carrier rotatable around an axis |
DE102008012931B4 (en) * | 2008-03-06 | 2011-07-21 | VTD Vakuumtechnik Dresden GmbH, 01257 | Method and device for cooling substrates |
Also Published As
Publication number | Publication date |
---|---|
JPH045822A (en) | 1992-01-09 |
EP0454054B1 (en) | 1996-01-10 |
CA2040946A1 (en) | 1991-10-24 |
DE69116205T2 (en) | 1996-06-27 |
EP0454054A3 (en) | 1992-03-18 |
DE69116205D1 (en) | 1996-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0454054A2 (en) | Lamp annealing apparatus and lamp annealing method | |
US7226488B2 (en) | Fast heating and cooling apparatus for semiconductor wafers | |
KR940011708B1 (en) | Temperature control device for semiconductor wafer | |
US6259072B1 (en) | Zone controlled radiant heating system utilizing focused reflector | |
KR101586211B1 (en) | Thermal reactor with improved gas flow distribution | |
US5155331A (en) | Method for cooling a plasma electrode system for an etching apparatus | |
US5364488A (en) | Coaxial plasma processing apparatus | |
US6473993B1 (en) | Thermal treatment method and apparatus | |
GB2317497A (en) | Semiconductor wafer thermal processing apparatus | |
US20040123805A1 (en) | Vacuum treatment method and vacuum treatment device | |
JP3583467B2 (en) | Apparatus and method for manufacturing semiconductor device | |
KR100559820B1 (en) | Thermal treatment apparatus and thermal treatment method | |
KR20200063652A (en) | Apparatus for controlling temperature of purge gas | |
US6769908B2 (en) | Wafer heat-treatment system and wafer heat-treatment method | |
KR20040093730A (en) | System and method for lamp split zone control | |
KR20000017153A (en) | Cooling structure for light illuminating-type heating apparatus | |
KR20020088620A (en) | Thermal processing appratus with vacuous insulator | |
KR0179938B1 (en) | Exposure device for wafer | |
JP2002110576A (en) | Heat treating apparatus and heat treating method | |
JP2001196321A (en) | Gas-cooled vertical wafer processing device | |
KR200264227Y1 (en) | Cooldown chamber of a rapid thermal processing apparatus | |
JPH0936097A (en) | Temperature adjustment device | |
KR20010109923A (en) | Heater module with cooling system | |
JPH10172977A (en) | Heat treatment method and its device for compound semiconductor substrate | |
JPH08124868A (en) | Heat treating furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB NL SE |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB NL SE |
|
17P | Request for examination filed |
Effective date: 19920513 |
|
17Q | First examination report despatched |
Effective date: 19930519 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB NL SE |
|
REF | Corresponds to: |
Ref document number: 69116205 Country of ref document: DE Date of ref document: 19960222 |
|
ET | Fr: translation filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 19960325 Year of fee payment: 6 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Effective date: 19960410 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 19960430 Year of fee payment: 6 Ref country code: FR Payment date: 19960430 Year of fee payment: 6 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 19960530 Year of fee payment: 6 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Effective date: 19970423 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Effective date: 19971101 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 19970423 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19971231 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980101 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 19971101 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |