EP0360887A1 - Référence de tension CMOS - Google Patents
Référence de tension CMOS Download PDFInfo
- Publication number
- EP0360887A1 EP0360887A1 EP88115839A EP88115839A EP0360887A1 EP 0360887 A1 EP0360887 A1 EP 0360887A1 EP 88115839 A EP88115839 A EP 88115839A EP 88115839 A EP88115839 A EP 88115839A EP 0360887 A1 EP0360887 A1 EP 0360887A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- circuit
- output
- field effect
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Definitions
- the invention relates to a circuit arrangement in complementary MOS technology according to the preamble of claim 1.
- Bandgap resp. Bandgap circuits are known and are described, for example, in the book "Semiconductor Circuit Technology” by U. Tietze and Ch. Schenk, 7th edition, Springer-Verlag, Berlin, Heidelberg, New York 1985, pages 534 ff.
- bandgap circuits can be used to generate reference voltages which, independently of the temperature coefficients of the components used in them, provide a temperature-independent reference voltage.
- the principle of such circuits is to compensate for the negative temperature coefficient of the base-emitter diode voltage of a bipolar transistor by adding a voltage with a correspondingly positive temperature coefficient by using a second transistor with a different base-emitter voltage and an emitter resistor.
- CMOS complementary metal-oxide-semiconductor
- the different base-emitter voltages of the bipolar transistors are generated, for example, by different area ratios of the emitter zones.
- the circuit relates to a p-well CMOS technology, as can be implemented, for example, on an n ⁇ -conductive substrate or a correspondingly conductive epitaxial layer.
- N-channel field effect transistors are produced by introducing p+ zones for the source and drain into the substrate.
- Bipolar transistors can be produced in this technique by introducing a p-type well on the n-type substrate and in turn a n-type connection zone. This creates a substrate-npn transistor, in which the n+-zone is the emitter, the p ⁇ -well is the base and the substrate is the collector. The collector or the substrate must be connected to the positive operating voltage in order to reliably block parasitic diodes between the p-wells and the substrate.
- the CMOS bandgap circuit known from the aforementioned prior publication has the base connections of the two npn transistors as a reference point for the bandgap voltage. Usually this point is applied to the reference potential, i. H. to ground.
- the output connection of the bandgap voltage is at the connection point of the drain connection of a MOS transistor with a resistor, both of which are arranged in the emitter circuit of a bipolar transistor.
- the known CMOS bandgap circuit requires a positive and a negative supply voltage with respect to the reference potential.
- bandgap circuits which manage with only an unipolar supply voltage, but which have to do without bipolar transistors.
- these circuits do not achieve the temperature stability of bipolar bandgap circuits.
- the invention has for its object to provide a CMOS voltage reference circuit that manages with an only unipolar supply voltage and achieves the temperature stability of bipolar bandgap circuits.
- the circuit arrangement according to the invention has the advantage that it can be operated with a low and unipolar voltage with respect to the reference potential and that it can also be used to implement higher reference voltages than the bandgap voltage of the semiconductor material.
- Embodiments of the invention are characterized in the subclaims.
- the bandgap circuit contains two bipolar transistors T1 and T2 with different base-emitter voltages. Both collector connections are connected to the VDD terminal, which has a positive potential compared to the reference voltage.
- a resistor R3 and in series the output circuit of a field effect transistor M1 is arranged in the emitter circuit of transistor T1, the source of which is connected to terminal VSS.
- the VSS terminal is at reference potential, i. H. grounded.
- the series circuit of two resistors R1 and R2 and the output circuit of another field effect transistor M2 is arranged in the output circuit of transistor T2.
- the source connection of M2 is also at the VSS terminal.
- the bandgap voltage UG must be tapped at the drain terminal of the transistor M2, to which the terminal VG1 corresponds, based on the base terminals of the bipolar transistors T1 and T2, to which the terminal VG2 corresponds.
- the output of the bandgap circuit VG1 is now fed back to the reference point VG2.
- the connection VG1 is connected to an input of a second operational amplifier OP2, the other input of which lies at the dividing point of an ohmic voltage divider consisting of the resistors R4 and R5.
- the ohmic voltage divider is between the connection VG2 and the terminal VSS, i. H. Ground, switched.
- the output of the operational amplifier OP2 is on the connection VG2, i. H. fed back to the base connections of the bipolar transistors T1 and T2.
- the output of the second operational amplifier OP2 is connected to the terminal VR, at which the temperature-independent reference voltage UR can be tapped with respect to the reference potential at the terminal VSS.
- the relationship between the temperature-independent reference voltage UR and the bandgap voltage UG is established by the ohmic voltage divider from the resistors R4 and R5.
- the temperature-independent reference voltage UR is thus calculated from the product of the bandgap voltage UG on the one hand and the sum of the two resistors R4 and R5 in relation to the resistor R4 on the other hand.
- An embodiment of the invention according to the figure contains a startup circuit IA, which is connected between the output terminal VR of the second operational amplifier OP2 and the terminal VDD with the relatively positive supply voltage potential.
- This start-up circuit IA is drawn as a current source and can be implemented, for example, by a current source transistor or a resistor.
- the starting circuit IA enables the reference voltage UR to be used as the operating voltage of the bandgap circuit, so that the actual reference voltage source can be operated from the two bipolar transistors T1 and T2 with the stabilized output reference voltage. This results in excellent suppression of input voltage fluctuations at the VDD terminal.
- the start-up circuit IA is necessary since the operating voltage derived from the temperature-independent reference voltage UR must first be built up when a voltage is applied to the VDD terminal.
- the circuit according to the embodiment of the figure makes it possible to dispense with a separate connection terminal VR, so that the CMOS voltage reference according to the invention has only the two connection terminals VDD and VSS to the outside.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE88115839T DE3883536D1 (de) | 1988-09-26 | 1988-09-26 | CMOS-Spannungsreferenz. |
EP88115839A EP0360887B1 (fr) | 1988-09-26 | 1988-09-26 | Référence de tension CMOS |
AT88115839T ATE93634T1 (de) | 1988-09-26 | 1988-09-26 | Cmos-spannungsreferenz. |
JP1243254A JP2759905B2 (ja) | 1988-09-26 | 1989-09-18 | 相補性mos技術による回路装置 |
US07/412,894 US4931718A (en) | 1988-09-26 | 1989-09-26 | CMOS voltage reference |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP88115839A EP0360887B1 (fr) | 1988-09-26 | 1988-09-26 | Référence de tension CMOS |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0360887A1 true EP0360887A1 (fr) | 1990-04-04 |
EP0360887B1 EP0360887B1 (fr) | 1993-08-25 |
Family
ID=8199372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP88115839A Expired - Lifetime EP0360887B1 (fr) | 1988-09-26 | 1988-09-26 | Référence de tension CMOS |
Country Status (5)
Country | Link |
---|---|
US (1) | US4931718A (fr) |
EP (1) | EP0360887B1 (fr) |
JP (1) | JP2759905B2 (fr) |
AT (1) | ATE93634T1 (fr) |
DE (1) | DE3883536D1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0913756A2 (fr) * | 1997-10-30 | 1999-05-06 | Xerox Corporation | Régulateur de tension |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0782404B2 (ja) * | 1989-07-11 | 1995-09-06 | 日本電気株式会社 | 基準電圧発生回路 |
US5027053A (en) * | 1990-08-29 | 1991-06-25 | Micron Technology, Inc. | Low power VCC /2 generator |
JPH06175742A (ja) * | 1992-12-09 | 1994-06-24 | Nec Corp | 基準電圧発生回路 |
US5545978A (en) * | 1994-06-27 | 1996-08-13 | International Business Machines Corporation | Bandgap reference generator having regulation and kick-start circuits |
US5889394A (en) * | 1997-06-02 | 1999-03-30 | Motorola Inc. | Temperature independent current reference |
US6150872A (en) * | 1998-08-28 | 2000-11-21 | Lucent Technologies Inc. | CMOS bandgap voltage reference |
US6411158B1 (en) * | 1999-09-03 | 2002-06-25 | Conexant Systems, Inc. | Bandgap reference voltage with low noise sensitivity |
FR2802316B1 (fr) * | 1999-12-08 | 2003-10-24 | Mhs | Controle de source de courant basse consommation par double alimentation basse regulee en tension |
US6724176B1 (en) * | 2002-10-29 | 2004-04-20 | National Semiconductor Corporation | Low power, low noise band-gap circuit using second order curvature correction |
US6844772B2 (en) * | 2002-12-11 | 2005-01-18 | Texas Instruments Incorporated | Threshold voltage extraction circuit |
US6815941B2 (en) * | 2003-02-05 | 2004-11-09 | United Memories, Inc. | Bandgap reference circuit |
KR100588339B1 (ko) * | 2004-01-07 | 2006-06-09 | 삼성전자주식회사 | 오토 튜닝 기능을 갖는 전압-전류 변환회로를 구비한전류원 회로 |
US7728574B2 (en) * | 2006-02-17 | 2010-06-01 | Micron Technology, Inc. | Reference circuit with start-up control, generator, device, system and method including same |
EP1884856B1 (fr) * | 2006-07-26 | 2016-04-06 | ams AG | Circuit convertisseur tension/courant et méthode pour produire un courant en rampe. |
EP1885061B1 (fr) * | 2006-07-26 | 2012-02-29 | austriamicrosystems AG | Montage amplificateur et procédé d'amplification |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983002342A1 (fr) * | 1981-12-21 | 1983-07-07 | Motorola Inc | Source de courant de precision |
EP0217225A1 (fr) * | 1985-09-30 | 1987-04-08 | Siemens Aktiengesellschaft | Circuit ajustable pour générer une tension de référence dépendant de la température |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4317054A (en) * | 1980-02-07 | 1982-02-23 | Mostek Corporation | Bandgap voltage reference employing sub-surface current using a standard CMOS process |
US4602207A (en) * | 1984-03-26 | 1986-07-22 | At&T Bell Laboratories | Temperature and power supply stable current source |
US4590418A (en) * | 1984-11-05 | 1986-05-20 | General Motors Corporation | Circuit for generating a temperature stabilized reference voltage |
US4590419A (en) * | 1984-11-05 | 1986-05-20 | General Motors Corporation | Circuit for generating a temperature-stabilized reference voltage |
US4622512A (en) * | 1985-02-11 | 1986-11-11 | Analog Devices, Inc. | Band-gap reference circuit for use with CMOS IC chips |
US4588941A (en) * | 1985-02-11 | 1986-05-13 | At&T Bell Laboratories | Cascode CMOS bandgap reference |
US4626770A (en) * | 1985-07-31 | 1986-12-02 | Motorola, Inc. | NPN band gap voltage reference |
GB8630980D0 (en) * | 1986-12-29 | 1987-02-04 | Motorola Inc | Bandgap reference circuit |
US4857823A (en) * | 1988-09-22 | 1989-08-15 | Ncr Corporation | Bandgap voltage reference including a process and temperature insensitive start-up circuit and power-down capability |
-
1988
- 1988-09-26 EP EP88115839A patent/EP0360887B1/fr not_active Expired - Lifetime
- 1988-09-26 AT AT88115839T patent/ATE93634T1/de not_active IP Right Cessation
- 1988-09-26 DE DE88115839T patent/DE3883536D1/de not_active Expired - Lifetime
-
1989
- 1989-09-18 JP JP1243254A patent/JP2759905B2/ja not_active Expired - Lifetime
- 1989-09-26 US US07/412,894 patent/US4931718A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983002342A1 (fr) * | 1981-12-21 | 1983-07-07 | Motorola Inc | Source de courant de precision |
EP0217225A1 (fr) * | 1985-09-30 | 1987-04-08 | Siemens Aktiengesellschaft | Circuit ajustable pour générer une tension de référence dépendant de la température |
Non-Patent Citations (1)
Title |
---|
IEEE JOURNAL OF SOLID-STATE CIRCUITS, Band SC-20, Nr. 6, Dezember 1985, Seiten 1283-1285, IEEE, New York, US; S.L. LIN et al.: "A Vbe(T) model with application to bandgap reference design" * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0913756A2 (fr) * | 1997-10-30 | 1999-05-06 | Xerox Corporation | Régulateur de tension |
EP0913756A3 (fr) * | 1997-10-30 | 1999-05-19 | Xerox Corporation | Régulateur de tension |
Also Published As
Publication number | Publication date |
---|---|
DE3883536D1 (de) | 1993-09-30 |
EP0360887B1 (fr) | 1993-08-25 |
ATE93634T1 (de) | 1993-09-15 |
JP2759905B2 (ja) | 1998-05-28 |
US4931718A (en) | 1990-06-05 |
JPH02121012A (ja) | 1990-05-08 |
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