EP0316214A1 - Electron source comprising emissive cathodes with microtips, and display device working by cathodoluminescence excited by field emission using this source - Google Patents

Electron source comprising emissive cathodes with microtips, and display device working by cathodoluminescence excited by field emission using this source Download PDF

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Publication number
EP0316214A1
EP0316214A1 EP88402742A EP88402742A EP0316214A1 EP 0316214 A1 EP0316214 A1 EP 0316214A1 EP 88402742 A EP88402742 A EP 88402742A EP 88402742 A EP88402742 A EP 88402742A EP 0316214 A1 EP0316214 A1 EP 0316214A1
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EP
European Patent Office
Prior art keywords
source
microtips
layer
cathode
conductive layer
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EP88402742A
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German (de)
French (fr)
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EP0316214B1 (en
Inventor
Michel Borel
Jean-François Boronat
Robert Meyer
Philippe Rambaud
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/04—Electrodes; Screens
    • H01J17/06—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the present invention relates to an electron source with microtip emissive cathodes and a cathodoluminescence display device excited by field emission, using this source.
  • the invention applies in particular to the production of simple displays, allowing the visualization of still images, and to the production of complex multiplexed screens, allowing the visualization of animated images, for example of the type of television images.
  • the electron source used in this known device is schematically represented in FIG. 1.
  • this source has a matrix structure and optionally comprises, on a substrate 2, for example made of glass, a thin layer of silica 4.
  • a substrate 2 for example made of glass
  • silica layer 4 On this silica layer 4 is formed a plurality of electrodes 5 in the form of parallel conductive strips or layers 6, playing the role of cathode conductors and constituting the columns of the matrix structure.
  • These cathode conductors 5 are covered with an electrically insulating layer 8, for example made of silica, except on the connection ends 19 of these conductors 5, ends provided for the polarization of said conductors.
  • an electrically insulating layer 8 for example made of silica, except on the connection ends 19 of these conductors 5, ends provided for the polarization of said conductors.
  • electrodes 10 Above this layer 8 are formed a plurality of electrodes 10 also in the form of parallel conductive strips. These electrodes 10 are perpendicular to
  • the known source also includes a plurality of elementary electron emitters (microtips), a copy of which 12 is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the layer 6 of the cathode conductor 5 corresponding to this zone is provided with a plurality of microtips 12 for example made of molybdenum and the grid 10 corresponding to said zone has an opening 14 facing each of the microtips 12.
  • Each of these latter conforms substantially to the shape of a cone the base of which rests on the layer 6 and the top of which is situated at the level of the corresponding opening 14.
  • the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.
  • the grids as well as the insulating layer 8 are provided with openings elsewhere than in the crossing zones, a microtip being associated with each of these openings, due to the method described in the patent application cited above, due to ease of manufacture.
  • each layer 6 has a thickness of the order of 0.2 micrometer
  • the electrically insulating layer 8 has a thickness of the order of 1 micrometer
  • each grid has a thickness of the order of 0.4 micrometer
  • each opening 14 has a diameter of the order of 1.3 micrometer
  • the base of each microtip has a diameter of the order of 1.1 micrometer.
  • the known device further comprises a screen E comprising a cathodoluminescent anode 16 disposed opposite the grids, parallel to the latter.
  • control means 20 When the known device is put under vacuum, by carrying by control means 20 a grid at a potential for example of the order of 100 volts relative to a cathode conductor, the microtips located in the crossing zone of this grid and of this cathode conductor emit electrons.
  • the anode 16 is advantageously brought by these means 20 to a potential equal to or greater than that of the grids; in particular, it can be grounded when the grids are brought to ground, or polarized negatively with respect to ground.
  • Each crossing zone which comprises for example 104 to 105 elementary emitters per mm2, thus corresponds to a bright spot on the screen.
  • the known source of electrons poses a problem: it has been found that, during the operation of this known device, especially during its start-up and during its stabilization period, local degassing takes place which can generate electric arcs between different components of the device (tips, grids, anodes). There is nothing in this case to limit the electric current in the cathode conductors. There is a runaway phenomenon during which this current increases and, at a certain moment, its intensity becomes greater than the maximum intensity Io of the electric current which the cathode conductors can withstand. Some of these are then destroyed and no longer work, in part or in whole depending on the location of the destruction (breakdown).
  • the known source of electrons is thus fragile and therefore has a limited lifespan.
  • resistors can only be used with electron sources - notably intended for the manufacture of display devices - of reduced size, complexity and functional possibility.
  • the known source of electrons thus has another drawback: the display devices which use it can exhibit significant point heterogeneities in luminosity.
  • the present invention makes it possible to remedy not only the disadvantage of brittleness mentioned above but also this other drawback, which was not the case with the source using the resistors.
  • Its object is a source of electrons comprising: - first parallel electrodes, playing the role of cathode conductors, each cathode conductor comprising an electrically conductive layer, one face of which carries a plurality of microtips which are made of an electron emitting material, and - second parallel electrodes, playing the role of grids, these being electrically isolated from the cathode conductors and making an angle with them, which defines areas of intersection of the cathode conductors and grids, the microtips being located at least in these crossing zones, the grids being further arranged opposite said faces and pierced with holes respectively opposite the microtips, the apex of each microtip being located substantially at the level of the hole which corresponds to it, the microtips of each crossing zone being capable of emitting electrons when the corresponding grid is positively polarized with respect to the corresponding cathode conductor, an electric current then flowing in each microtip of the zone, source characterized in that each cathode conductor further comprises means provided
  • resistive layer is meant an electrically resistant layer.
  • the invention makes it possible to limit the intensity of the current in each of the microtips of each cathode conductor and therefore makes it possible, a fortiori, to limit the intensity of the electric current flowing in the corresponding cathode conductor.
  • each microtip has a base (“pedestal”) made of an electrically resistant material.
  • the source object of the present invention in which each conductive layer is entirely covered by a continuous resistive layer, presents an important advantage compared to this known source: it allows a better dissipation of the thermal power released in the "active" parts of the resistive material (resistive parts included between the microtips and the conductive layers), which gives the source of the present invention more robustness and reliability.
  • the nominal current per transmitter is less than 1 microamp and generally between 0.1 and 1 microamp.
  • the resistance Ri that this resistive layer generates under the microtips has a value for example of the order of 107 to 108 ohms (corresponding to a voltage drop of 10 V in the resistive layer for a current of the order of 1 to 0.1 microampere per transmitter).
  • the entire voltage between the conductive layer and the grid which is generally of the order of 100 V, is transferred to the terminals of the resistive material.
  • the thermal power released in each active part then becomes very large and can be of the order of (100) 2 / 108 W or 0.1 mW in a volume of the order of 1 cubic micrometer (volume of the active part) .
  • the source object of the invention is therefore very advantageous compared to the source of the American document. mentioned above.
  • the source object of the invention may comprise a plurality of continuous resistive layers, respectively arranged on the conductive layers of the source. This plurality of resistive layers can be obtained by etching, between the cathode conductors, a single continuous resistive layer.
  • the source object of the invention comprises a single continuous resistive layer which covers all of the conductive layers of the source.
  • Each conductive layer can be made of a material chosen from the group comprising aluminum, tin oxide doped with antimony or fluorine, indium oxide doped with tin and niobium.
  • the resistive layer or layers are made of a material which is chosen from the group comprising In2O3, SnO2, Fe2O3, ZnO and Si doped, and which has a resistivity greater than that of the material constituting the conductive layer.
  • the resistivity of the resistive layer is between approximately 102 ohms.cm and 106 ohms.cm.
  • resistive materials of resistivity between 102 ohms.cm and 106 ohms.cm and in particular between 104 ohms.cm and 105 ohms.cm, allows to obtain a significant series resistance for example of the order of 108 ohms under each microtip for a resistive layer of 1 to 0.1 micrometer in thickness so as to obtain a good homogenization of emission, a good limitation of over-intensities and a good heat dissipation in the case of short circuits.
  • the silicon which, precisely, by suitable doping, can have a high resistivity for example of the order of 104 ohms.cm to 105 ohms.cm, can be advantageously chosen as a resistive material.
  • the present invention also relates to a cathodoluminescence display device, comprising: a source of electrons with microtip emissive cathodes, and - A cathodoluminescent anode, characterized in that the source conforms to the source object of the invention.
  • an electrical resistance 18 of appropriate Ro value is mounted in series with each cathode conductor 6.
  • the control means 20 known, making it possible to selectively bring the grids to positive potentials, for example of the order of 100 volts, with respect to the cathode conductors are electrically connected to the grids and to the cathode conductors and the electrical connection between these means 20 and each cathode conductor is performed via an electrical resistor 18. This is thus connected to the end of the connection 19 of the corresponding cathode conductor (end which is shown in Figure 1).
  • each of these electrical resistances is calculated so that the maximum intensity of the current liable to flow in the corresponding cathode conductor is less than the critical intensity Io beyond which breakdowns occur.
  • This value Io depends on the size and the nature of the cathode conductors. It is always much greater than the intensity of the current corresponding to the nominal operation of the cathode conductors.
  • the cathode conductors are made of indium oxide and have a width of 0.7 mm, a thickness of 0, 2 micrometer, a length of 40 mm and a square resistance of 10 ohms, so that the electrical resistance of each cathode conductor has an Rc value of about 0.6 kilo-ohms;
  • the critical value Io is of the order of 10 milliamps, the intensity of the nominal current being less than or equal to about 1 milliampere; to excite a given crossing zone, the grid is brought to a positive potential U of the order of 100 volts relative to the corresponding cathode conductor, the quantity Ro + Rc having to be greater than U / Io.
  • the Ro value can be taken equal to approximately 10 kilo-ohms.
  • the source represented in FIG. 3, which uses electrical resistances, is applicable, for reasons of response time, only to screens of size, complexity and reduced functional possibility.
  • the response time of the corresponding cathode conductor is equal to the charge time of the capacitor formed by this cathode conductor, by the corresponding grid (line) and by the insulating layer separating the conductor cathodic grid.
  • This charging time is of the order of the product of the charging resistance Ro + Rc by the capacity of the capacitor in question.
  • the capacity is of the order of 4 nanofarads per cm2 and, for a screen of 1 dm2 of surface and 256 columns and 256 lines, the surface of a column is about 0.25 cm2.
  • the excitation time of a line for such a screen is 1 / (50x256) second, or approximately 80 microseconds.
  • the response time thus represents approximately 10% of the line excitation time, which is the maximum admissible limit if we want to avoid coupling phenomena.
  • These phenomena correspond to the fact that on a column, the brightness of a point is influenced by the state of the previous point: - when the previous point is lit, the point excitation time is equal to the line excitation time since the column is already at the emission potential, - when the previous point is off, the point excitation time is equal to the line excitation time minus the load time, since the column must be brought to the emission potential.
  • the charging time is not negligible compared to the line excitation time (if it is for example greater than 10% of the latter), the coupling effect is visible.
  • the response time problem can be solved by replacing said electrical resistors of Ro value with resistive layers.
  • resistive layers thus we limit the current in the cathode conductors while having an access resistance to them practically zero.
  • FIG. 4 an exemplary embodiment of the source object of the invention is shown diagrammatically, making it possible to solve this problem of the response time and the problems of heterogeneity and over-intensity mentioned above.
  • the source schematically shown in Figure 4 differs from the source described with reference to Figures 1 and 2 in that, in the known source, described with reference to these Figures 1 and 2, each cathode conductor 5 has a single electrically conductive layer 6, while in the source according to the invention, shown in FIG.
  • each cathode conductor 5 comprises a first electrically conductive layer 22 resting on the electrically insulating layer 4 (as was the case with layer 6 of the figures 1 to 3) and a second resistive layer 24, which surmounts the conductive layer 22 and on which the bases of the microtips 12 of the cathode conductor 5 rest.
  • each cathode conductor of the source is thus presented in the form of a double-layer strip, the control means 20 being connected to the conductive layers 22.
  • the conductive layer 22 is for example made of aluminum.
  • the resistive layer 24 acts as a buffer resistance between the conductive layer and the corresponding elementary emitters 12.
  • the resistive layer which of course must have an electrical resistance greater than that of the layer conductive, is preferably made with materials having a resistivity of the order of 102 to 106 ohms.cm, compatible with the method of manufacturing cathode conductors (see in particular description of Figure 5).
  • this resistive layer 24 it is possible, for example, to choose as materials indium oxide In2O3, tin oxide SnO2, iron oxide Fe2O3, zinc oxide ZnO or doped silicon, by ensuring, of course, that the material chosen has a higher resistivity than that of the material chosen to produce the conductive layer.
  • the advantage of the embodiment shown in FIG. 4 lies inter alia in the fact that it makes it possible to "transfer" the "protection" resistors, of the type of resistors 18 in FIG. 3, between the conductive layer and each elementary emitter . A better response time is thus obtained, without appreciable increase in the cost of the electron source.
  • the intensity of the current flowing through each cathode conductor can be limited to a value less than or equal to Io, while allowing the nominal current to pass through this cathode conductor.
  • the resistive layer 24 therefore also provides protection against the risks of breakdown.
  • the load resistance is that of the conductive layer and therefore corresponds to a response time much less than a microsecond, in the case of a conductive layer of aluminum, which makes it possible to produce complex screens of big size.
  • the use of the resistive layer makes it possible to associate with each elementary emitter a resistance denoted Ri, which allows this resistive layer to also play a role of homogenization on the electronic emission.
  • Ri a resistance denoted Ri
  • Ri has a self-regulating effect on the current. Any abnormal brightness of the light points is thus greatly attenuated.
  • a first layer 22 of aluminum 200 nanometers thick and with resistivity is deposited by sputtering 3.10 ⁇ 6 ohm.cm then, on this aluminum layer, a second layer 24 of Fe2O2 iron oxide with a thickness of 150 nanometers and a resistivity of 104 ohm.cm, also by sputtering.
  • the two layers thus deposited are then etched successively for example through the same resin mask by chemical etching so as to obtain a network of parallel cathode strips or conductors 5 the length of which is 150 millimeters and the width of 300 micrometers, l the interval between two bands 5 being 50 micrometers.
  • the etching of the aluminum layer can be carried out by means of a bath comprising 4 volumes of H3PO4 at 85% by weight, 4 volumes of pure CH3COOH, 1 volume of HNO3 at 67% by weight and 1 volume of H2O, for 6 minutes at room temperature, for an aluminum layer 200 nm thick and the etching of the Fe2O3 layer can be carried out by means of the product Mixelec Mélange PFE 8.1, sold by the company SOPRELEC SA, for minutes at room temperature, for a layer of Fe3O3 150 nm thick.
  • the load resistance is that of the aluminum layer and is therefore approximately 75 ohms.
  • the area of a column is 0.45 cm2.
  • the response time is therefore of the order of 0.15 microseconds, with a capacity which remains of the order of 4 nanofarads per cm2.
  • each resistance Ri is calculated to calculate the value of each resistance Ri. It is observed that the lines of the electric current flowing through the cathode conductors are located in the conductive layer and pass through the various corresponding microtips by crossing the resistive layer perpendicularly to the latter.
  • the resistance Ri is therefore equal to the resistivity of the iron oxide Fe2O3 multiplied by the thickness of the resistive layer and divided by the base surface of an elementary electron emitter, which gives a resistance Ri equal in this case at around 107 ohms.
  • a microtip is crossed by a current of about 0.1 microampere, which corresponds to a voltage drop in Ri of 1 volt. The nominal operation is not disturbed.
  • the maximum current per transmitter can be 10 microamps.
  • the resistive material is advantageously suitably doped silicon.
  • a layer of this material is used which, preferably, is not etched between the cathode conductors, the leakage currents which it induces between these cathode conductors being tolerable.
  • a first layer 22 of aluminum 200 nm thick and with resistivity is deposited by cathode sputtering 3.10 ⁇ 6 ohm.cm.
  • This aluminum layer is then etched for example through a resin mask by chemical etching so as to obtain a network of parallel conductive strips or layers the length of which is 150 millimeters and the width of 300 micrometers for example, the interval between two bands being 50 micrometers.
  • the etching of the aluminum layer can for example be carried out by means of the bath described in the preceding example, relating to FIG. 5.
  • a layer 25 of phosphorus doped silicon for example, 500 nm thick and a resistivity of 5.104 ohms.cm is then deposited on the network of conductive layers by vacuum deposition techniques.
  • the resistance Ri here is 2.5.108 ohms. It is stronger than in the previous example described with reference to the FIG. 5, which has the effect on the one hand of reducing the leakage current due to possible short circuits, on the other hand of having a greater effect on the homogenization of the emission.

Abstract

Each cathode (5) comprises an electrically conducting layer (22) and microtips (12) and, according to the invention, a continuous resistive layer (24) is provided between the conducting layer and the microtips. The display device comprises a cathodoluminescent anode (16) opposite the source. <IMAGE>

Description

La présente invention concerne une source d'électrons à cathodes émissives à micropointes et un dispositif de visualisation par cathodoluminescence excitée par émission de champ, utilisant cette source.The present invention relates to an electron source with microtip emissive cathodes and a cathodoluminescence display device excited by field emission, using this source.

L'invention s'applique notamment à la réalisation d'afficheurs simples, permettant la visualisation d'images fixes, et à la réalisation d'écrans complexes multiplexés, permettant la visualisation d'images animées, par exemple du type des images de télévision.The invention applies in particular to the production of simple displays, allowing the visualization of still images, and to the production of complex multiplexed screens, allowing the visualization of animated images, for example of the type of television images.

On connaît déjà, par la demande de brevet français n⁰8601024 du 24 janvier 1986 (brevet FR-A-2593953), un dispositif de visualisation par cathodoluminescence excitée par émission de champ, comprenant une source d'électrons à cathodes émissives à micropointes. Dans la demande citée, est également décrit un procédé de fabrication du dispositif de visualisation.Already known, from French patent application No. 8601024 of January 24, 1986 (patent FR-A-2593953), a display device by cathodoluminescence excited by field emission, comprising an electron source with emissive cathodes with microtips. In the cited application, a method of manufacturing the display device is also described.

La source d'électrons utilisée dans ce dispositif connu est schématiquement représentée sur la figure 1. Comme on le voit, cette source a une structure matricielle et comprend éventuellement, sur un substrat 2 par exemple en verre, une mince couche de silice 4. Sur cette couche de silice 4 sont formées une pluralité d'électrodes 5 en forme de bandes ou couches conductrices parallèles 6, jouant le rôle de conducteurs cathodiques et constituant les colonnes de la structure matricielle. Ces conducteurs cathodiques 5 sont recouverts d'une couche électriquement isolante 8, par exemple en silice, excepté sur les extrémités de connexion 19 de ces conducteurs 5, extrémités prévues pour la polarisation desdits conducteurs. Au-­dessus de cette couche 8 sont formées une pluralité d'électrodes 10 également en forme de bandes conductrices parallèles. Ces électrodes 10 sont perpendiculaires aux électrodes 5, jouent le rôle de grilles et constituent les lignes de la structure matricielle.The electron source used in this known device is schematically represented in FIG. 1. As can be seen, this source has a matrix structure and optionally comprises, on a substrate 2, for example made of glass, a thin layer of silica 4. On this silica layer 4 is formed a plurality of electrodes 5 in the form of parallel conductive strips or layers 6, playing the role of cathode conductors and constituting the columns of the matrix structure. These cathode conductors 5 are covered with an electrically insulating layer 8, for example made of silica, except on the connection ends 19 of these conductors 5, ends provided for the polarization of said conductors. Above this layer 8 are formed a plurality of electrodes 10 also in the form of parallel conductive strips. These electrodes 10 are perpendicular to the electrodes 5, play the role of grids and constitute the lines of the matrix structure.

La source connue comporte également une pluralité d'émetteurs élémentaires d'électrons (micropointes) dont un exemplaire 12 est schématiquement représenté sur la figure 2 : dans chacune des zones de croisement des conducteurs cathodiques 5 et des grilles 10, la couche 6 du conducteur cathodique 5 correspondant à cette zone est pourvue d'une pluralité de micropointes 12 par exemple en molybdène et la grille 10 correspondant à ladite zone comporte une ouverture 14 en regard de chacune des micropointes 12. Chacune de ces dernières épouse sensiblement la forme d'un cône dont la base repose sur la couche 6 et dont le sommet est situé au niveau de l'ouverture 14 correspondante. Bien entendu, la couche isolante 8 est également pourvue d'ouvertures 15 permettant le passage des micropointes 12.The known source also includes a plurality of elementary electron emitters (microtips), a copy of which 12 is schematically represented in FIG. 2: in each of the crossing zones of the cathode conductors 5 and of the grids 10, the layer 6 of the cathode conductor 5 corresponding to this zone is provided with a plurality of microtips 12 for example made of molybdenum and the grid 10 corresponding to said zone has an opening 14 facing each of the microtips 12. Each of these latter conforms substantially to the shape of a cone the base of which rests on the layer 6 and the top of which is situated at the level of the corresponding opening 14. Of course, the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.

On notera également sur la figure 1, que, de façon préférentielle, les grilles ainsi que la couche isolante 8 sont pourvues d'ouvertures ailleurs que dans les zones de croisement, une micropointe étant associée à chacune de ces ouvertures, du fait du procédé décrit dans la demande de brevet citée plus haut, en raison de facilité de fabrication.It will also be noted in FIG. 1, that, preferably, the grids as well as the insulating layer 8 are provided with openings elsewhere than in the crossing zones, a microtip being associated with each of these openings, due to the method described in the patent application cited above, due to ease of manufacture.

A titre purement indicatif et nullement limitatif, chaque couche 6 a une épaisseur de l'ordre de 0,2 micromètre, la couche électriquement isolante 8 a une épaisseur de l'ordre de 1 micromètre, chaque grille a une épaisseur de l'ordre de 0,4 micromètre, chaque ouverture 14 a un diamètre de l'ordre de 1,3 micromètre et la base de chaque micropointe a un diamètre de l'ordre de 1,1 micromètre.As a purely indicative and in no way limitative, each layer 6 has a thickness of the order of 0.2 micrometer, the electrically insulating layer 8 has a thickness of the order of 1 micrometer, each grid has a thickness of the order of 0.4 micrometer, each opening 14 has a diameter of the order of 1.3 micrometer and the base of each microtip has a diameter of the order of 1.1 micrometer.

Le dispositif connu comprend en outre un écran E comportant une anode cathodoluminescente 16 disposée en regard des grilles, parallèlement à ces dernières.The known device further comprises a screen E comprising a cathodoluminescent anode 16 disposed opposite the grids, parallel to the latter.

Lorsque le dispositif connu est mis sous vide, en portant par des moyens de commande 20 une grille à un potentiel par exemple de l'ordre de 100 volts par rapport à un conducteur cathodique, les micropointes situées dans la zone de croisement de cette grille et de ce conducteur cathodique émettent des électrons. L'anode 16 est portée avantageusement par ces moyens 20 à un potentiel égal ou supérieur à celui des grilles ; en particulier, elle peut être mise à la masse lorsque les grilles sont portées à la masse, ou polarisées négativement par rapport à la masse.When the known device is put under vacuum, by carrying by control means 20 a grid at a potential for example of the order of 100 volts relative to a cathode conductor, the microtips located in the crossing zone of this grid and of this cathode conductor emit electrons. The anode 16 is advantageously brought by these means 20 to a potential equal to or greater than that of the grids; in particular, it can be grounded when the grids are brought to ground, or polarized negatively with respect to ground.

L'anode est alors frappée par les électrons et émet de ce fait de la lumière. Chaque zone de croisement, qui comporte par exemple 10⁴ à 10⁵ émetteurs élémentaires par mm², correspond ainsi à un point lumineux sur l'écran.The anode is then struck by electrons and therefore emits light. Each crossing zone, which comprises for example 10⁴ to 10⁵ elementary emitters per mm², thus corresponds to a bright spot on the screen.

La source connue d'électrons pose un problème : on a constaté que, pendant le fonctionnement de ce dispositif connu, surtout pendant sa mise en route et pendant sa période de stabilisation, il se produit des dégazages locaux qui peuvent engendrer des arcs électriques entre différents constituants du dispositif (pointes, grilles, anodes). Rien ne permet dans ce cas de limiter le courant électrique dans les conducteurs cathodiques. Il se produit un phénomène d'emballement au cours duquel ce courant croît et, à un certain moment, son intensité devient supérieure à l'intensité maximale Io du courant électrique que peuvent supporter les conducteurs cathodiques. Certains de ceux-ci sont alors détruits et ne fonctionnent plus, en partie ou en totalité selon la localisation de la destruction (claquage).The known source of electrons poses a problem: it has been found that, during the operation of this known device, especially during its start-up and during its stabilization period, local degassing takes place which can generate electric arcs between different components of the device (tips, grids, anodes). There is nothing in this case to limit the electric current in the cathode conductors. There is a runaway phenomenon during which this current increases and, at a certain moment, its intensity becomes greater than the maximum intensity Io of the electric current which the cathode conductors can withstand. Some of these are then destroyed and no longer work, in part or in whole depending on the location of the destruction (breakdown).

La source connue d'électrons est ainsi fragile et présente de ce fait une durée de vie limitée.The known source of electrons is thus fragile and therefore has a limited lifespan.

Pour limiter l'intensité du courant électrique dans les conducteurs cathodiques, on pourrait monter en série, avec chaque conducteur cathodique, une résistance électrique ayant une valeur suffisamment grande pour conduire à un courant d'intensité inférieure à l'intensité du courant de claquage de ce conducteur cathodique.To limit the intensity of the electric current in the cathode conductors, one could mount in series, with each cathode conductor, an electric resistance having a value large enough to lead to a current of intensity lower than the intensity of the breakdown current of this cathode conductor.

Cependant, pour des questions de temps de réponse, ces résistances ne peuvent être utilisées qu'avec des sources d'électrons -notamment destinées à la fabrication de dispositifs de visualisation- de taille, de complexité et de possibilité fonctionnelle réduites.However, for reasons of response time, these resistors can only be used with electron sources - notably intended for the manufacture of display devices - of reduced size, complexity and functional possibility.

Par ailleurs, la source connue d'électrons pose un autre problème que l'on ne peut résoudre en utilisant lesdites résistances mentionnées précédemment.Furthermore, the known source of electrons poses another problem which cannot be solved by using said resistors mentioned above.

On a en effet constaté que, si une micropointe de la source connue a une structure particulièrement favorable, elle émet un courant électronique beaucoup plus fort que les autres micropointes, ce qui engendre sur l'écran E un point anormalement lumineux qui peut constituer un défaut visuel inacceptable.It has indeed been observed that, if a microtip from the known source has a particularly favorable structure, it emits an electronic current much stronger than the other microtips, which generates on the screen E an abnormally bright point which can constitute a defect. unacceptable visual.

La source connue d'électrons présente ainsi un autre inconvénient : les dispositifs de visualisation qui l'utilisent peuvent présenter d'importantes hétérogénéités ponctuelles de luminosité.The known source of electrons thus has another drawback: the display devices which use it can exhibit significant point heterogeneities in luminosity.

La présente invention permet de remédier non seulement à l'inconvénient de fragilité mentionné plus haut mais encore à cet autre inconvénient, ce qui n'était pas le cas avec la source utilisant les résistances.The present invention makes it possible to remedy not only the disadvantage of brittleness mentioned above but also this other drawback, which was not the case with the source using the resistors.

Elle a pour objet une source d'électrons comprenant :
- des premières électrodes parallèles, jouant le rôle de conducteurs cathodiques, chaque conducteur cathodique comportant une couche électriquement conductrice dont une face porte une pluralité de micropointes qui sont faites d'un matériau émetteur d'électrons, et
- des secondes électrodes parallèles, jouant le rôle de grilles, celles-ci étant électriquement isolées des conducteurs cathodiques et faisant un angle avec ceux-ci, ce qui définit des zones de croisement des conducteurs cathodiques et des grilles, les micropointes étant situées au moins dans ces zones de croisement, les grilles étant en outre disposées en regard desdites faces et percées de trous respectivement en regard des micropointes, le sommet de chaque micropointe étant situé sensiblement au niveau du trou qui lui correspond, les micropointes de chaque zone de croisement étant capables d'émettre des électrons lorsque la grille correspondante est polarisée positivement par rapport au conducteur cathodique correspondant, un courant électrique circulant alors dans chaque micropointe de la zone,
source caractérisée en ce que chaque conducteur cathodique comporte en outre des moyens prévus pour limiter l'intensité du courant électrique circulant dans chaque micropointe de ce conducteur cathodique, ces moyens comportant une couche résistive continue, disposée sur la couche conductrice du conducteur cathodique correspondant, entre cette couche conductrice et les micropointes correspondantes, ces dernières reposant sur la couche résistive.Its object is a source of electrons comprising:
- first parallel electrodes, playing the role of cathode conductors, each cathode conductor comprising an electrically conductive layer, one face of which carries a plurality of microtips which are made of an electron emitting material, and
- second parallel electrodes, playing the role of grids, these being electrically isolated from the cathode conductors and making an angle with them, which defines areas of intersection of the cathode conductors and grids, the microtips being located at least in these crossing zones, the grids being further arranged opposite said faces and pierced with holes respectively opposite the microtips, the apex of each microtip being located substantially at the level of the hole which corresponds to it, the microtips of each crossing zone being capable of emitting electrons when the corresponding grid is positively polarized with respect to the corresponding cathode conductor, an electric current then flowing in each microtip of the zone,
source characterized in that each cathode conductor further comprises means provided for limiting the intensity of the electric current flowing in each microtip of this cathode conductor, these means comprising a continuous resistive layer, disposed on the conductive layer of the corresponding cathode conductor, between this conductive layer and the corresponding microtips, the latter resting on the resistive layer.

Par couche résistive, on entend une couche électriquement résistante.By resistive layer is meant an electrically resistant layer.

L'invention permet de limiter l'intensité du courant dans chacune des micropointes de chaque conducteur cathodique et permet donc, a fortiori, de limiter l'intensité du courant électrique circulant dans le conducteur cathodique correspondant.The invention makes it possible to limit the intensity of the current in each of the microtips of each cathode conductor and therefore makes it possible, a fortiori, to limit the intensity of the electric current flowing in the corresponding cathode conductor.

L'utilisation de ces moyens de limitation permet donc d'accroître la durée de vie de la source en minimisant les risques de destruction par claquage, provoquée par des surintensités et d'améliorer l'homogénéité d'émission électronique de la source et par conséquent l'homogénéité de luminosité des écrans des dispositifs de visualisation incorporant une telle source, et donc le rendement de fabrication de ces dispositifs, en atténuant de façon importante les points trop lumineux dus à des émetteurs d'électrons qui engendrent un courant électronique anormalement élevé.The use of these means of limitation therefore makes it possible to increase the lifetime of the source by minimizing the risks of destruction by breakdown caused by overcurrents and to improve the homogeneity of electronic emission of the source and consequently the uniformity of brightness of the screens of the display devices incorporating such a source, and therefore the manufacturing yield of these devices, by significantly attenuating too bright points due to electron emitters which generate an abnormally high electronic current.

Certes, on connaît déjà par le document US-A-3789471, une source d'électrons à micropointes dans laquelle chaque micropointe comporte une base (''pedestal'') faite d'un matériau électriquement résistant. Cependant la source objet de la présente invention, dans laquelle chaque couche conductrice est entièrement recouverte par une couche résistive continue, présente un avantage important par rapport à cette source connue : elle permet une meilleure dissipation de la puissance thermique dégagée dans les parties "actives" du matériau résistif (parties résistives comprises entre les micropointes et les couches conductrices), ce qui donne à la source de la présente invention plus de robustesse et de fiabilité.Certainly, from document US-A-3789471, a source of microtip electrons is already known in which each microtip has a base (“pedestal”) made of an electrically resistant material. However, the source object of the present invention, in which each conductive layer is entirely covered by a continuous resistive layer, presents an important advantage compared to this known source: it allows a better dissipation of the thermal power released in the "active" parts of the resistive material (resistive parts included between the microtips and the conductive layers), which gives the source of the present invention more robustness and reliability.

En effet, dans la source du document américain mentionné plus haut, pour une micropointe donnée, la dissipation a lieu seulement par l'intermédiaire de la couche conductrice correspondante, alors que dans la présente invention, cette dissipation a lieu non seulement par l'intermédiaire de cette couche conductrice mais encore de façon latérale, dans la couche résistive (qui entoure la partie active de couche résistive située sous la micropointe).Indeed, in the source of the American document mentioned above, for a given microtip, dissipation takes place only through the corresponding conductive layer, while in the present invention, this dissipation takes place not only through of this conductive layer but still laterally, in the resistive layer (which surrounds the active part of the resistive layer located under the microtip).

En particulier, dans les applications de type "écran plat", le courant nominal par émetteur est inférieur à 1 microampère et généralement compris entre 0,1 et 1 microampère. Pour que la couche résistive ait un effet sur l'homogénéité d'émission et sur les courts-circuits susceptibles de se produire en particulier entre les micropointes et la grille de la source, il faut que la résistance Ri que cette couche résistive engendre sous les micropointes (émetteurs d'électrons) ait une valeur par exemple de l'ordre de 10⁷ à 10⁸ ohms (correspondant à une chute de tension de 10 V dans la couche résistive pour un courant de l'ordre de 1 à 0,1 microampère par émetteur).In particular, in "flat screen" type applications, the nominal current per transmitter is less than 1 microamp and generally between 0.1 and 1 microamp. For the resistive layer to have an effect on the homogeneity of emission and on the short-circuits likely to occur in particular between the microtips and the grid of the source, it is necessary that the resistance Ri that this resistive layer generates under the microtips (electron emitters) has a value for example of the order of 10⁷ to 10⁸ ohms (corresponding to a voltage drop of 10 V in the resistive layer for a current of the order of 1 to 0.1 microampere per transmitter).

En cas de courts-circuits, toute la tension entre la couche conductrice et la grille qui est généralement de l'ordre de 100 V est reportée aux bornes du matériau résistif. La puissance thermique dégagée dans chaque partie active devient alors très importante et peut être de l'ordre de (100)² /10⁸ W soit 0,1 mW dans un volume de l'ordre de 1 micromètre cube (volume de la partie active).In the event of short circuits, the entire voltage between the conductive layer and the grid, which is generally of the order of 100 V, is transferred to the terminals of the resistive material. The thermal power released in each active part then becomes very large and can be of the order of (100) ² / 10⁸ W or 0.1 mW in a volume of the order of 1 cubic micrometer (volume of the active part) .

Grâce aux meilleures possibilités de dissipation thermique qu'elle offre, la source objet de l'invention est donc très avantageuse par rapport à la source du document américain mentionné plus haut.Thanks to the better possibilities of heat dissipation that it offers, the source object of the invention is therefore very advantageous compared to the source of the American document. mentioned above.

La source objet de l'invention peut comprendre une pluralité de couches résistives continues, respectivement disposées sur les couches conductrices de la source. Cette pluralité de couches résistives peut être obtenue par gravure, entre les conducteurs cathodiques, d'une couche résistive continue, unique.The source object of the invention may comprise a plurality of continuous resistive layers, respectively arranged on the conductive layers of the source. This plurality of resistive layers can be obtained by etching, between the cathode conductors, a single continuous resistive layer.

Cependant, de préférence, la source objet de l'invention comprend une couche résistive continue unique qui recouvre l'ensemble des couches conductrices de la source.However, preferably, the source object of the invention comprises a single continuous resistive layer which covers all of the conductive layers of the source.

Chaque couche conductrice peut être faite d'un matériau choisi dans le groupe comprenant l'aluminium, l'oxyde d'étain dopé à l'antimoine ou au fluor, l'oxyde d'indium dopé à l'étain et le niobium.Each conductive layer can be made of a material chosen from the group comprising aluminum, tin oxide doped with antimony or fluorine, indium oxide doped with tin and niobium.

Dans une réalisation particulière, la ou les couches résistives sont faites d'un matériau qui est choisi dans le groupe comprenant In₂O₃, SnO₂, Fe₂O₃, ZnO et Si dopé, et qui a une résistivité supérieure à celle du matériau constituant la couche conductrice.In a particular embodiment, the resistive layer or layers are made of a material which is chosen from the group comprising In₂O₃, SnO₂, Fe₂O₃, ZnO and Si doped, and which has a resistivity greater than that of the material constituting the conductive layer.

De préférence, la résistivité de la couche résistive est comprise entre environ 10² ohms.cm et 10⁶ ohms.cm.Preferably, the resistivity of the resistive layer is between approximately 10² ohms.cm and 10⁶ ohms.cm.

Le choix de matériaux résistifs, de résistivité comprise entre 10² ohms.cm et 10⁶ ohms.cm et en particulier entre 10⁴ ohms.cm et 10⁵ ohms.cm, permet d'obtenir une résistance-série importante par exemple de l'ordre de 10⁸ ohms sous chaque micropointe pour une couche résistive de 1 à 0,1 micromètre d'épaisseur de façon à obtenir une bonne homogénéisation d'émission, une bonne limitation des sur-intensités et une bonne dissipation thermique dans le cas de courts-circuits. Le silicium qui justement, par un dopage approprié, peut avoir une résistivité importante par exemple de l'ordre de 10⁴ ohms.cm à 10⁵ ohms.cm, peut être avantageusement choisi comme matériau résistif.The choice of resistive materials, of resistivity between 10² ohms.cm and 10⁶ ohms.cm and in particular between 10⁴ ohms.cm and 10⁵ ohms.cm, allows to obtain a significant series resistance for example of the order of 10⁸ ohms under each microtip for a resistive layer of 1 to 0.1 micrometer in thickness so as to obtain a good homogenization of emission, a good limitation of over-intensities and a good heat dissipation in the case of short circuits. The silicon which, precisely, by suitable doping, can have a high resistivity for example of the order of 10⁴ ohms.cm to 10⁵ ohms.cm, can be advantageously chosen as a resistive material.

La présente invention concerne également un dispositif de visualisation par cathodoluminescence, comprenant :
- une source d'électrons à cathodes émissives à micropointes, et
- une anode cathodoluminescente, caractérisé en ce que la source est conforme à la source objet de l'invention.The present invention also relates to a cathodoluminescence display device, comprising:
a source of electrons with microtip emissive cathodes, and
- A cathodoluminescent anode, characterized in that the source conforms to the source object of the invention.

La présente invention sera mieux comprise à la lecture de la description qui suit, d'exemples de réalisation donnés à titre purement indicatif et nullement limitatif, en référence aux dessins annexés sur lesquels :

  • - la figure 1 est une vue schématique d'une source connue d'électrons à cathodes émissives à micropointes et a déjà été décrite,
  • - la figure 2 est une vue schématique d'un émetteur élémentaire d'électrons de cette source et a déjà été décrite,
  • - la figure 3 est une vue schématique d'une source d'électrons comportant des résistances électriques,
  • - la figure 4 est une vue schématique d'un mode de réalisation particulier de la source objet de l'invention, utilisant une pluralité de couches résistives continues,
  • - la figure 5 illustre schématiquement une étape d'un procédé de fabrication de la source représentée sur la figure 4, et
  • - la figure 6 illustre schématiquement une étape d'un procédé de fabrication d'un autre mode de réalisation particulier de la source de l'invention.
The present invention will be better understood on reading the description which follows, of exemplary embodiments given purely by way of non-limiting indication, with reference to the appended drawings in which:
  • FIG. 1 is a schematic view of a known source of electrons with microtip emissive cathodes and has already been described,
  • FIG. 2 is a schematic view of an elementary emitter of electrons from this source and has already been described,
  • FIG. 3 is a schematic view of an electron source comprising electrical resistances,
  • FIG. 4 is a schematic view of a particular embodiment of the source object of the invention, using a plurality of continuous resistive layers,
  • FIG. 5 schematically illustrates a step in a process for manufacturing the source shown in FIG. 4, and
  • - Figure 6 schematically illustrates a step in a method of manufacturing another particular embodiment of the source of the invention.

La présente invention sera décrite en référence aux figures 4 à 6 dans son application particulière à la visualisation.The present invention will be described with reference to Figures 4 to 6 in its particular application to visualization.

Sur la figure 3, on a représenté schématiquement une source d'électrons. La seule différence entre celle-ci et la source connue, qui est représentée sur les figures 1 et 2, réside dans le fait que l'on ajoute à cette source connue des résistances électriques 18 de valeur Ro.In Figure 3, a source of electrons is shown schematically. The only difference between this and the known source, which is shown in FIGS. 1 and 2, lies in the fact that electrical resistors 18 of Ro value are added to this known source.

Plus précisément, une résistance électrique 18 de valeur Ro appropriée, indiquée par la suite est montée en série avec chaque conducteur cathodique 6. Les moyens de commande 20 connus, permettant de porter sélectivement les grilles à des potentiels positifs, par exemple de l'ordre de 100 volts, par rapport aux conducteurs cathodiques sont reliés électriquement aux grilles et aux conducteurs cathodiques et la liaison électrique entre ces moyens 20 et chaque conducteur cathodique est effectuée par l'intermédiaire d'une résistance électrique 18. Celle-ci est ainsi reliée à l'extrémité de la connexion 19 du conducteur cathodique correspondant (extrémité qui est représentée sur la figure 1).More specifically, an electrical resistance 18 of appropriate Ro value, indicated below, is mounted in series with each cathode conductor 6. The control means 20 known, making it possible to selectively bring the grids to positive potentials, for example of the order of 100 volts, with respect to the cathode conductors are electrically connected to the grids and to the cathode conductors and the electrical connection between these means 20 and each cathode conductor is performed via an electrical resistor 18. This is thus connected to the end of the connection 19 of the corresponding cathode conductor (end which is shown in Figure 1).

La valeur Ro de chacune de ces résistances électriques est calculée de façon que l'intensité maximale du courant susceptible de circuler dans le conducteur cathodique correspondant soit inférieure à l'intensité Io critique au-delà de laquelle des claquages se produisent. Cette valeur Io dépend de la taille et de la nature des conducteurs cathodiques. Elle est toujours largement supérieure à l'intensité du courant correspondant au fonctionnement nominal des conducteurs cathodiques.The value Ro of each of these electrical resistances is calculated so that the maximum intensity of the current liable to flow in the corresponding cathode conductor is less than the critical intensity Io beyond which breakdowns occur. This value Io depends on the size and the nature of the cathode conductors. It is always much greater than the intensity of the current corresponding to the nominal operation of the cathode conductors.

On donne ci-après, à titre purement indicatif et nullement limitatif, un exemple de calcul de la valeur Ro des résistances électriques : les conducteurs cathodiques sont en oxyde d'indium et ont une largeur de 0,7 mm, une épaisseur de 0,2 micromètre, une longueur de 40 mm et une résistance carrée de 10 ohms, de sorte que la résistance électrique de chaque conducteur cathodique a une valeur Rc de l'ordre de 0,6 kilo-ohms ; la valeur critique Io est de l'ordre de 10 milliampères, l'intensité du courant nominal étant inférieure ou égale à 1 milliampère environ ; pour exciter une zone de croisement donnée, on porte la grille correspondante à un potentiel positif U de l'ordre de 100 volts par rapport au conducteur cathodique correspondant, la quantité Ro+Rc devant être supérieure à U/Io. Il en résulte que la valeur Ro peut être prise égale à 10 kilo-ohms environ.An example is given below, purely by way of indication and in no way limiting, of calculation of the value Ro of the electrical resistances: the cathode conductors are made of indium oxide and have a width of 0.7 mm, a thickness of 0, 2 micrometer, a length of 40 mm and a square resistance of 10 ohms, so that the electrical resistance of each cathode conductor has an Rc value of about 0.6 kilo-ohms; the critical value Io is of the order of 10 milliamps, the intensity of the nominal current being less than or equal to about 1 milliampere; to excite a given crossing zone, the grid is brought to a positive potential U of the order of 100 volts relative to the corresponding cathode conductor, the quantity Ro + Rc having to be greater than U / Io. As a result, the Ro value can be taken equal to approximately 10 kilo-ohms.

La source représentée sur la figure 3, qui utilise des résistances électriques, n'est applicable, pour des raisons de temps de réponse, qu'à des écrans de taille, de complexité et de possibilité fonctionnelle réduites.The source represented in FIG. 3, which uses electrical resistances, is applicable, for reasons of response time, only to screens of size, complexity and reduced functional possibility.

En effet, pour une zone de croisement donnée, le temps de réponse du conducteur cathodique correspondant (colonne) est égal au temps de charge du condensateur formé par ce conducteur cathodique, par la grille correspondante (ligne) et par la couche isolante séparant le conducteur cathodique de la grille. Ce temps de charge est de l'ordre du produit de la résistance de charge Ro+Rc par la capacité du condensateur en question.Indeed, for a given crossing zone, the response time of the corresponding cathode conductor (column) is equal to the charge time of the capacitor formed by this cathode conductor, by the corresponding grid (line) and by the insulating layer separating the conductor cathodic grid. This charging time is of the order of the product of the charging resistance Ro + Rc by the capacity of the capacitor in question.

Pour une couche 8 de silice de 1 micromètre d'épaisseur, la capacité est de l'ordre de 4 nanofarads par cm² et, pour un écran de 1 dm² de surface et de 256 colonnes et 256 lignes, la surface d'une colonne est de l'ordre de 0,25 cm². En prenant pour Ro+Rc une valeur de l'ordre 10⁴ ohms, on obtient un temps de réponse t de l'ordre de 10 microsecondes.For a layer 8 of silica 1 micrometer thick, the capacity is of the order of 4 nanofarads per cm² and, for a screen of 1 dm² of surface and 256 columns and 256 lines, the surface of a column is about 0.25 cm². By taking for Ro + Rc a value of the order of 10⁴ ohms, we obtain a response time t of the order of 10 microseconds.

A une fréquence de 50 images par seconde, le temps d'excitation d'une ligne pour un tel écran est de 1/(50x256) seconde, soit environ 80 microsecondes.At a frequency of 50 images per second, the excitation time of a line for such a screen is 1 / (50x256) second, or approximately 80 microseconds.

Dans cet exemple, le temps de réponse représente ainsi environ 10% du temps d'excitation d'une ligne, ce qui est la limite maximale admissible si l'on veut éviter les phénomènes de couplage. Ces phénomène correspondent au fait que sur une colonne, la luminosité d'un point est influencée par l'état du point précédent :
- lorsque le point précédent est allumé, le temps d'excitation du point est égal au temps d'excitation de ligne puisque la colonne est déjà au potentiel d'émission,
- lorsque le point précédent est éteint, le temps d'excitation du point est égal au temps d'excitation de ligne moins le temps de charge, puisque la colonne doit être portée au potentiel d'émission.In this example, the response time thus represents approximately 10% of the line excitation time, which is the maximum admissible limit if we want to avoid coupling phenomena. These phenomena correspond to the fact that on a column, the brightness of a point is influenced by the state of the previous point:
- when the previous point is lit, the point excitation time is equal to the line excitation time since the column is already at the emission potential,
- when the previous point is off, the point excitation time is equal to the line excitation time minus the load time, since the column must be brought to the emission potential.

Si le temps de charge n'est pas négligeable devant le temps d'excitation de ligne (s'il est par exemple supérieur à 10% de ce dernier), l'effet de couplage est visible.If the charging time is not negligible compared to the line excitation time (if it is for example greater than 10% of the latter), the coupling effect is visible.

La solution utilisant les résistances électriques est donc peu satisfaisante si l'on veut soit faire une image de télévision de bonne définition (comportant au moins 500 lignes et des niveaux de gris) soit faire des écrans de plus grande surface (plus de 1 dm²), la capacité du condensateur étant alors encore plus grande que précédemment.The solution using electrical resistances is therefore unsatisfactory if we want to either make an image of good definition television (with at least 500 lines and gray levels) or make screens of larger surface (more than 1 dm²), the capacitor capacity then being even greater than previously.

Le problème du temps de réponse peut être résolu en remplaçant lesdites résistances électriques de valeur Ro par des couches résistives. Ainsi limite-t-on le courant dans les conducteurs cathodiques tout en ayant une résistance d'accès à ceux-ci pratiquement nulle.The response time problem can be solved by replacing said electrical resistors of Ro value with resistive layers. Thus we limit the current in the cathode conductors while having an access resistance to them practically zero.

Sur la figure 4, on a représenté schématiquement un exemple de réalisation de la source objet de l'invention, permettant de résoudre ce problème du temps de réponse et les problèmes d'hétérogénéité et de sur-intensité mentionnés plus haut. La source schématiquement représentée sur la figure 4 diffère de la source décrite en référence aux figures 1 et 2 par le fait que, dans la source connue, décrite en référence à ces figures 1 et 2, chaque conducteur cathodique 5 comporte une simple couche électriquement conductrice 6, alors que dans la source conforme à l'invention, représentée sur la figure 4, chaque conducteur cathodique 5 comporte une première couche 22 électriquement conductrice reposant sur la couche électriquement isolante 4 (comme c'était le cas de la couche 6 des figures 1 à 3) et une seconde couche 24 résistive, qui surmonte la couche conductrice 22 et sur laquelle reposent les bases des micropointes 12 du conducteur cathodique 5. Dans l'exemple représenté sur la figure 4, chaque conducteur cathodique de la source se présente ainsi sous la forme d'une bande à double couche, les moyens de commande 20 étant reliés aux couches conductrices 22.In FIG. 4, an exemplary embodiment of the source object of the invention is shown diagrammatically, making it possible to solve this problem of the response time and the problems of heterogeneity and over-intensity mentioned above. The source schematically shown in Figure 4 differs from the source described with reference to Figures 1 and 2 in that, in the known source, described with reference to these Figures 1 and 2, each cathode conductor 5 has a single electrically conductive layer 6, while in the source according to the invention, shown in FIG. 4, each cathode conductor 5 comprises a first electrically conductive layer 22 resting on the electrically insulating layer 4 (as was the case with layer 6 of the figures 1 to 3) and a second resistive layer 24, which surmounts the conductive layer 22 and on which the bases of the microtips 12 of the cathode conductor 5 rest. In the example shown in FIG. 4, each cathode conductor of the source is thus presented in the form of a double-layer strip, the control means 20 being connected to the conductive layers 22.

La couche conductrice 22 est par exemple en aluminium. La couche résistive 24 joue le rôle de résistance-tampon entre la couche conductrice et les émetteurs élémentaires 12 correspondants.The conductive layer 22 is for example made of aluminum. The resistive layer 24 acts as a buffer resistance between the conductive layer and the corresponding elementary emitters 12.

La couche résistive, qui bien entendu doit avoir une résistance électrique supérieure à celle de la couche conductrice, est de préférence réalisée avec des matériaux présentant une résistivité de l'ordre de 10² à 10⁶ ohms.cm, compatibles avec le procédé de fabrication des conducteurs cathodiques (voir notamment description de la figure 5).The resistive layer, which of course must have an electrical resistance greater than that of the layer conductive, is preferably made with materials having a resistivity of the order of 10² to 10⁶ ohms.cm, compatible with the method of manufacturing cathode conductors (see in particular description of Figure 5).

Pour réaliser cette couche résistive 24, on peut par exemple choisir en tant que matériaux l'oxyde d'indium In₂O₃, l'oxyde d'étain SnO₂, l'oxyde de fer Fe₂O₃, l'oxyde de zinc ZnO ou le silicium dopé, en s'assurant bien entendu du fait que le matériau choisi a une résistivité supérieure à celle du matériau choisi pour réaliser la couche conductrice.To produce this resistive layer 24, it is possible, for example, to choose as materials indium oxide In₂O₃, tin oxide SnO₂, iron oxide Fe₂O₃, zinc oxide ZnO or doped silicon, by ensuring, of course, that the material chosen has a higher resistivity than that of the material chosen to produce the conductive layer.

L'intérêt de la réalisation représentée sur la figure 4 réside entre autres dans le fait qu'elle permet de "reporter" les résistances de "protection", du type des résistances 18 de la figure 3, entre la couche conductrice et chaque émetteur élémentaire. On obtient ainsi un meilleur temps de réponse, sans accroîssement notable du coût de la source d'électrons.The advantage of the embodiment shown in FIG. 4 lies inter alia in the fact that it makes it possible to "transfer" the "protection" resistors, of the type of resistors 18 in FIG. 3, between the conductive layer and each elementary emitter . A better response time is thus obtained, without appreciable increase in the cost of the electron source.

En choisissant convenablement la résistivité de la couche résistive et l'épaisseur de cette dernière, on peut limiter l'intensité du courant parcourant chaque conducteur cathodique à une valeur inférieure ou égale à Io, tout en laissant passer le courant nominal dans ce conducteur cathodique. La couche résistive 24 assure donc également une protection contre les risques de claquage.By suitably choosing the resistivity of the resistive layer and the thickness of the latter, the intensity of the current flowing through each cathode conductor can be limited to a value less than or equal to Io, while allowing the nominal current to pass through this cathode conductor. The resistive layer 24 therefore also provides protection against the risks of breakdown.

Pour un conducteur cathodique donné, la résistance de charge est celle de la couche conductrice et correspond donc à un temps de réponse largement inférieur à une microseconde, dans le cas d'une couche conductrice en aluminium, ce qui permet de réaliser des écrans complexes de grande taille.For a given cathode conductor, the load resistance is that of the conductive layer and therefore corresponds to a response time much less than a microsecond, in the case of a conductive layer of aluminum, which makes it possible to produce complex screens of big size.

Comme on l'a déjà indiqué, l'utilisation de la couche résistive permet d'associer à chaque émetteur élémentaire une résistance notée Ri, ce qui permet à cette couche résistive de jouer en outre un rôle d'homogénéisation sur l'émission électronique. En effet, si un émetteur élémentaire d'électrons reçoit un courant électrique trop élevé, la chute de tension résultant de Ri permet d'abaisser la tension qui est appliquée à cet émetteur et fait donc décroître le courant. Ainsi Ri a un effet d'auto-régulation sur le courant. Toute luminosité anormale des points lumineux est ainsi fortement atténuée.As already indicated, the use of the resistive layer makes it possible to associate with each elementary emitter a resistance denoted Ri, which allows this resistive layer to also play a role of homogenization on the electronic emission. In fact, if an elementary electron emitter receives too high an electric current, the voltage drop resulting from Ri makes it possible to lower the voltage which is applied to this transmitter and therefore decreases the current. Thus Ri has a self-regulating effect on the current. Any abnormal brightness of the light points is thus greatly attenuated.

On va maintenant expliquer, en s'appuyant sur la figure 5, comment réaliser la source décrite en référence à la figure 4 et plus exactement comment modifier le procédé de fabrication d'une source d'électrons à cathodes émissives à micropointes indiqué dans la demande de brevet français n°8601024 du 24 janvier 1986 déjà citée, pour obtenir la superposition de la couche conductrice et de la couche résistive dans chaque conducteur cathodique de la source.We will now explain, based on FIG. 5, how to make the source described with reference to FIG. 4 and more exactly how to modify the process for manufacturing a source of electrons with microtip emissive cathodes indicated in the application. French Patent No. 8601024 of January 24, 1986 already cited, to obtain the superposition of the conductive layer and the resistive layer in each cathode conductor of the source.

Ainsi par exemple, sur un substrat en verre 2, recouvert d'un film de silice 4 de 100 nanomètres d'épaisseur par exemple, on dépose par pulvérisation cathodique une première couche 22 en aluminium de 200 nanomètres d'épaisseur et de résistivité 3.10⁻⁶ ohm.cm puis, sur cette couche d'aluminium, une deuxième couche 24 en oxyde de fer Fe₂O₃ d'épaisseur 150 nanomètres et de résistivité 10⁴ ohm.cm, également par pulvérisation cathodique.Thus, for example, on a glass substrate 2, covered with a silica film 4 of 100 nanometers thick for example, a first layer 22 of aluminum 200 nanometers thick and with resistivity is deposited by sputtering 3.10⁻ ⁶ ohm.cm then, on this aluminum layer, a second layer 24 of Fe₂O₂ iron oxide with a thickness of 150 nanometers and a resistivity of 10⁴ ohm.cm, also by sputtering.

Les deux couches ainsi déposées sont ensuite gravées successivement par exemple à travers un même masque de résine par une gravure chimique de façon à obtenir un réseau de bandes ou conducteurs cathodiques parallèles 5 dont la longueur est de 150 millimètres et la largeur de 300 micromètres, l'intervalle entre deux bandes 5 étant de 50 micromètres.The two layers thus deposited are then etched successively for example through the same resin mask by chemical etching so as to obtain a network of parallel cathode strips or conductors 5 the length of which is 150 millimeters and the width of 300 micrometers, l the interval between two bands 5 being 50 micrometers.

A titre purement indicatif et nullement limitatif, la gravure de la couche en aluminium peut être réalisée au moyen d'un bain comportant 4 volumes de H₃PO₄ à 85% en poids, 4 volumes de CH₃COOH pur, 1 volume de HNO₃ à 67% en poids et 1 volume de H₂O, pendant 6 minutes à température ambiante, pour une couche en aluminium de 200 nm d'épaisseur et la gravure de la couche Fe₂O₃ peut ëtre réalisée au moyen du produit Mixelec Mélange PFE 8.1, commercialisé par la société SOPRELEC S.A., pendant minutes à température ambiante, pour une couche en Fe₃O₃ de 150 nm d'épaisseur.As a purely indicative and in no way limitative, the etching of the aluminum layer can be carried out by means of a bath comprising 4 volumes of H₃PO₄ at 85% by weight, 4 volumes of pure CH₃COOH, 1 volume of HNO₃ at 67% by weight and 1 volume of H₂O, for 6 minutes at room temperature, for an aluminum layer 200 nm thick and the etching of the Fe₂O₃ layer can be carried out by means of the product Mixelec Mélange PFE 8.1, sold by the company SOPRELEC SA, for minutes at room temperature, for a layer of Fe₃O₃ 150 nm thick.

Le reste de la structure (couches isolantes, grilles, émetteurs, ...) est ensuite réalisé selon le procédé décrit dans la demande de brevet déjà citée (voir description de la figure 5 et des figures suivantes de cette demande).The rest of the structure (insulating layers, grids, emitters, etc.) is then produced according to the method described in the patent application already cited (see description of FIG. 5 and the following figures of this application).

La résistance de charge est celle de la couche d'aluminium et vaut donc environ 75 ohms. La surface d'une colonne est de 0,45 cm². Le temps de réponse est donc de l'ordre de 0,15 microseconde, avec une capacité qui reste de l'ordre de 4 nanofarads par cm².The load resistance is that of the aluminum layer and is therefore approximately 75 ohms. The area of a column is 0.45 cm². The response time is therefore of the order of 0.15 microseconds, with a capacity which remains of the order of 4 nanofarads per cm².

Pour calculer la valeur de chaque résistance Ri, on observe que les lignes du courant électrique parcourant les conducteurs cathodiques sont situées dans la couche conductrice et passent dans les différentes micropointes correspondantes en traversant la couche résistive perpendiculairement à celle-ci. La résistance Ri est donc égale à la résistivité de l'oxyde de fer Fe₂O₃ multipliée par l'épaisseur de la couche résistive et divisée par la surface de base d'un émetteur élémentaire d'électrons, ce qui donne une résistance Ri égale dans ce cas à environ 10⁷ ohms.To calculate the value of each resistance Ri, it is observed that the lines of the electric current flowing through the cathode conductors are located in the conductive layer and pass through the various corresponding microtips by crossing the resistive layer perpendicularly to the latter. The resistance Ri is therefore equal to the resistivity of the iron oxide Fe₂O₃ multiplied by the thickness of the resistive layer and divided by the base surface of an elementary electron emitter, which gives a resistance Ri equal in this case at around 10⁷ ohms.

De ce fait, en fonctionnement nominal, une micropointe est traversée par un courant d'environ 0,1 microampère, ce qui correspond à une chute de tension dans Ri de 1 volt. Le fonctionnement nominal n'est pas perturbé.Therefore, in nominal operation, a microtip is crossed by a current of about 0.1 microampere, which corresponds to a voltage drop in Ri of 1 volt. The nominal operation is not disturbed.

Avec une tension d'excitation de 100 volts, le courant maximum par émetteur peut ëtre de 10 microampères. Pour une surface émissive totale d'une zone de croisement, de 0,1 mm², comportant 1000 émetteurs, en admettant que l'ensemble des émetteurs fournissent simultanément le courant maximum (c'est à dire que ces émetteurs soient tous en court-circuit), ce qui est très peu probable, le courant traversant la couche conductrice serait de 10 milliampères, ce qui est la valeur maximum admissible pour éviter le claquage.With an excitation voltage of 100 volts, the maximum current per transmitter can be 10 microamps. For a total emissive area of a crossing zone, 0.1 mm², comprising 1000 transmitters, assuming that all of the transmitters simultaneously supply the maximum current (i.e. these transmitters are all short-circuited ), which is very unlikely, the current passing through the conductive layer would be 10 milliamps, which is the maximum admissible value to avoid breakdown.

Enfin, en supposant que pour une tension de 100 volts, un émetteur élémentaire ait un courant 10 fois plus fort que la normale (1 microampère au lieu de 0,1 microampère), la chute de tension dans Ri serait de 10 volts, ce qui réduirait d'un coefficient de l'ordre de 4 à 5 l'émission de l'émetteur élémentaire et la ramènerait à une valeur d'environ 0,2 à 0,3 microampère.Finally, assuming that for a voltage of 100 volts, an elementary transmitter has a current 10 times stronger than normal (1 microampere instead of 0.1 microampère), the fall of voltage in Ri would be 10 volts, which would reduce by a coefficient of the order of 4 to 5 the emission of the elementary transmitter and would bring it back to a value of about 0.2 to 0.3 microampere.

On voit donc bien l'effet d'homogénéisation de la résistance Ri, les points excessivement brillants étant supprimés.We can therefore clearly see the homogenization effect of the resistance Ri, the excessively bright points being eliminated.

Un autre exemple de réalisation de source conforme à l'invention va être décrit en se référant à la figure 6. Dans cet exemple, le matériau résistif est de façon avantageuse du silicium convenablement dopé. On utilise une couche de ce matériau qui, de préférence, n'est pas gravée entre les conducteurs cathodiques, les courants de fuite qu'elle induit entre ces conducteurs cathodiques étant tolérables.Another example embodiment of a source in accordance with the invention will be described with reference to FIG. 6. In this example, the resistive material is advantageously suitably doped silicon. A layer of this material is used which, preferably, is not etched between the cathode conductors, the leakage currents which it induces between these cathode conductors being tolerable.

Ainsi, par exemple, sur un substrat en verre 2, recouvert généralement d'un film de silice 4 de 100 nm d'épaisseur par exemple, on dépose par pulvérisation cathodique une premier couche 22 en aluminium de 200 nm d'épaisseur et de résistivité 3.10⁻⁶ ohm.cm. Cette couche d'aluminium est ensuite gravée par exemple à travers un masque de résine par une gravure chimique de façon à obtenir un réseau de bandes ou couches conductrices parallèles dont la longueur est de 150 millimètres et la largeur de 300 micromètres par exemple, l'intervalle entre deux bandes étant de 50 micromètres. La gravure de la couche d'aluminium peut être par exemple réalisée au moyen du bain décrit dans l'exemple précédent, relatif à la figure 5. Une couche 25 de silicium dopé au phosphore par exemple, de 500 nm d'épaisseur et d'une résistivité de 5.10⁴ ohms.cm est ensuite déposée sur le réseau de couches conductrices par des techniques de dépôt sous vide.Thus, for example, on a glass substrate 2, generally covered with a silica film 4 of 100 nm thick for example, a first layer 22 of aluminum 200 nm thick and with resistivity is deposited by cathode sputtering 3.10⁻⁶ ohm.cm. This aluminum layer is then etched for example through a resin mask by chemical etching so as to obtain a network of parallel conductive strips or layers the length of which is 150 millimeters and the width of 300 micrometers for example, the interval between two bands being 50 micrometers. The etching of the aluminum layer can for example be carried out by means of the bath described in the preceding example, relating to FIG. 5. A layer 25 of phosphorus doped silicon for example, 500 nm thick and a resistivity of 5.10⁴ ohms.cm is then deposited on the network of conductive layers by vacuum deposition techniques.

Le reste de la structure (couches isolantes, grilles, émetteurs, ...) est ensuite réalisé selon le procédé décrit dans la demande de brevet déjà citée.The rest of the structure (insulating layers, grids, emitters, etc.) is then produced according to the method described in the patent application already cited.

La résistance Ri vaut ici 2,5.10⁸ ohms. Elle est plus forte que dans l'exemple précédent décrit en référence à la figure 5, ce qui a pour effet d'une part de réduire le courant de fuite dû aux éventuels courts-circuits, d'autre part d'avoir un plus grand effet sur l'homogénéisation de l'émission.The resistance Ri here is 2.5.10⁸ ohms. It is stronger than in the previous example described with reference to the FIG. 5, which has the effect on the one hand of reducing the leakage current due to possible short circuits, on the other hand of having a greater effect on the homogenization of the emission.

Bien entendu, on peut utiliser dans le mode de réalisation des figures 4 et 5 des matériaux tels que la resistance Ri soit aussi de l'ordre de 10⁸ ohms notamment par l'utilisation de Si dopé.Of course, one can use in the embodiment of Figures 4 and 5 materials such as the resistance Ri is also of the order of 10⁸ ohms in particular by the use of doped Si.

Claims (8)

1. Source d'électrons comprenant :
- des premières électrodes paralléles (5), jouant le rôle de conducteurs cathodiques, chaque conducteur cathodique comportant une couche électriquement conductrice (22) dont une face porte une pluralité de micropointes (12) qui sont faites d'un matériau émetteur d'électrons, et
- des secondes électrodes parallèles (10), jouant le rôle de grilles, celles-ci étant électriquement isolées des conducteurs cathodiques (5) et faisant un angle avec ceux-ci, ce qui définit des zones de croisement des conducteurs cathodiques et des grilles, les micropointes (12) étant situées au moins dans ces zones de croisement, les grilles (10) étant en outre disposées en regard desdites faces et percées de trous (14) respectivement en regard des micropointes, le sommet de chaque micropointe étant situé sensiblement au niveau du trou qui lui correspond, les micropointes de chaque zone de croisement étant capables d'émettre des électrons lorsque la grille correspondante est polarisée positivement par rapport au conducteur cathodique correspondant, un courant électrique circulant alors dans chaque micropointe de la zone,
source caractérisée en ce que chaque conducteur cathodique (5) comporte en outre des moyens prévus pour limiter l'intensité du courant électrique circulant dans chaque micropointe de ce conducteur cathodique, ces moyens comportant une couche résistive (24, 25) continue, disposée sur la couche conductrice (22) du conducteur cathodique (5) correspondant, entre cette couche conductrice et les micropointes (12) correspondantes, ces dernières reposant sur la couche résistive (24, 25).1. Electron source comprising:
- first parallel electrodes (5), playing the role of cathode conductors, each cathode conductor comprising an electrically conductive layer (22), one face of which carries a plurality of microtips (12) which are made of an electron emitting material, and
- second parallel electrodes (10), playing the role of grids, these being electrically isolated from the cathode conductors (5) and making an angle with them, which defines crossing zones of the cathode conductors and grids, the microtips (12) being located at least in these crossing zones, the grids (10) being also arranged opposite said faces and pierced with holes (14) respectively opposite the microtips, the top of each microtip being located substantially at level of the hole which corresponds to it, the microtips of each crossing zone being capable of emitting electrons when the corresponding grid is positively polarized with respect to the corresponding cathode conductor, an electric current then circulating in each microtip of the zone,
source characterized in that each cathode conductor (5) further comprises means provided for limiting the intensity of the electric current flowing in each microtip of this cathode conductor, these means comprising a continuous resistive layer (24, 25), disposed on the conductive layer (22) of the corresponding cathode conductor (5), between this conductive layer and the corresponding microtips (12), the latter resting on the resistive layer (24, 25). 2. Source selon la revendication 1, caractérisée en ce qu'elle comprend une pluralité de couches résistives continues (24), respectivement disposées sur les couches conductrices de la source.2. Source according to claim 1, characterized in that it comprises a plurality of continuous resistive layers (24), respectively arranged on the conductive layers of the source. 3. Source selon la revendication 2, caractérisée en ce que cette pluralité de couches résistives est obtenue par gravure, entre les conducteurs cathodiques, d'une couche résistive continue, unique.3. Source according to claim 2, characterized in that that this plurality of resistive layers is obtained by etching, between the cathode conductors, of a single continuous resistive layer. 4. Source selon la revendication 1, caractérisée en ce qu'elle comprend une couche résistive continue unique (25), qui recouvre l'ensemble des couches conductrices de la source.4. Source according to claim 1, characterized in that it comprises a single continuous resistive layer (25), which covers all of the conductive layers of the source. 5. Source selon l'une quelconque des revendications 1 à 4, caractérisée en ce que chaque couche conductrice (22) est faite d'un matériau choisi dans le groupe comprenant l'aluminium, l'oxyde d'étain dopé à l'antimoine ou au fluor, l'oxyde d'indium dopé à l'étain et le niobium.5. Source according to any one of claims 1 to 4, characterized in that each conductive layer (22) is made of a material chosen from the group comprising aluminum, tin oxide doped with antimony or fluorine, indium oxide doped with tin and niobium. 6. Source selon l'une quelconque des revendications 1 à 5, caractérisée en ce que chaque couche résistive (24, 25) est faite d'un matériau qui est choisi dans le groupe comprenant In₂O₃, SnO₂, Fe₂O₃, ZnO et Si dopé, et qui a une résistivité supérieure à celle du matériau constituant la couche conductrice (22).6. Source according to any one of claims 1 to 5, characterized in that each resistive layer (24, 25) is made of a material which is chosen from the group comprising In₂O₃, SnO₂, Fe₂O₃, ZnO and Si doped, and which has a higher resistivity than that of the material constituting the conductive layer (22). 7. Source selon l'une quelconque des revendications 1 à 6, caractérisée en ce que la résistivité de chaque couche résistive (24, 25) est comprise entre environ 10² ohms.cm et 10⁶ ohms.cm.7. Source according to any one of claims 1 to 6, characterized in that the resistivity of each resistive layer (24, 25) is between approximately 10² ohms.cm and 10⁶ ohms.cm. 8. Dispositif de visualisation par cathodoluminescence, comprenant :
une source d'électrons à cathodes émissives à micropointes, et
- une anode cathodoluminescente (16), caractérisé en ce que la source est conforme à l'une quelconque des revendications 1 à 7.8. Cathodoluminescence display device, comprising:
a source of electrons with microtip emissive cathodes, and
- a cathodoluminescent anode (16), characterized in that the source conforms to any one of claims 1 to 7.
EP88402742A 1987-11-06 1988-11-02 Electron source comprising emissive cathodes with microtips, and display device working by cathodoluminescence excited by field emission using this source Expired - Lifetime EP0316214B1 (en)

Applications Claiming Priority (2)

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FR8715432A FR2623013A1 (en) 1987-11-06 1987-11-06 ELECTRO SOURCE WITH EMISSIVE MICROPOINT CATHODES AND FIELD EMISSION-INDUCED CATHODOLUMINESCENCE VISUALIZATION DEVICE USING THE SOURCE
FR8715432 1987-11-06

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KR970005760B1 (en) 1997-04-19
EP0316214B1 (en) 1993-01-27
US4940916A (en) 1990-07-10
JPH07118259B2 (en) 1995-12-18
FR2623013A1 (en) 1989-05-12
JPH01154426A (en) 1989-06-16
DE3877902T2 (en) 1993-07-15
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US4940916B1 (en) 1996-11-26
DE3877902D1 (en) 1993-03-11

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