EP0276889B1 - Capteur de pression pour charges de pression statiques avec corps en silicium - Google Patents

Capteur de pression pour charges de pression statiques avec corps en silicium Download PDF

Info

Publication number
EP0276889B1
EP0276889B1 EP88200095A EP88200095A EP0276889B1 EP 0276889 B1 EP0276889 B1 EP 0276889B1 EP 88200095 A EP88200095 A EP 88200095A EP 88200095 A EP88200095 A EP 88200095A EP 0276889 B1 EP0276889 B1 EP 0276889B1
Authority
EP
European Patent Office
Prior art keywords
resistance elements
silicon body
cavity
pressure
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP88200095A
Other languages
German (de)
English (en)
Other versions
EP0276889A2 (fr
EP0276889A3 (en
Inventor
Volker Dr. Graeger
Ralf Kobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Patentverwaltung GmbH
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Patentverwaltung GmbH
Publication of EP0276889A2 publication Critical patent/EP0276889A2/fr
Publication of EP0276889A3 publication Critical patent/EP0276889A3/de
Application granted granted Critical
Publication of EP0276889B1 publication Critical patent/EP0276889B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Definitions

  • the invention relates to a pressure transducer for static pressure loads with a silicon body, which is arranged on a carrier substrate and has a blind hole-like cavity open to the carrier substrate, whereby a membrane is formed which is parallel to the base surface of the silicon body and which forms the outer surface and in one (111) crystal plane opposite the carrier substrate, on the outer surface of which is arranged a Wheatstone bridge composed of piezoresistive resistance elements, of which two resistance elements are applied centrally on the membrane and two resistance elements on the outer edge of the membrane.
  • a corresponding pressure transducer for static pressure loads is known from US Pat. No. 3,820,401 A, in which a membrane lies parallel to a (111) crystal plane of a silicon body and the resistance elements are diffused into it.
  • a similar pressure transducer for the measurement of static and also differential pressure loads is also known, in which a blind hole-like cavity, designed as an annular groove and open to the carrier substrate, is provided, but as a solution to the problem of the simultaneous measurement of the static and differential pressure.
  • the cavity is on the side of the
  • Carrier substrate spanned by resistance elements. Such an interaction of cavities and resistance elements is not very suitable for positively influencing the non-linearities of the electrical voltage-pressure characteristic curve that occur at high static pressure loads.
  • a corresponding pressure sensor is also known from the journal "Siemens Research and Development Reports", Volume 13, 1984, No. 6, Springer-Verlag, pages 294 to 302.
  • This consists of a single-crystalline silicon body, which is arranged on a glass plate designed as a carrier substrate.
  • the outer surface of the silicon body, which is opposite to the carrier substrate, is referred to as the base surface.
  • This base area which lies in the (111) crystal plane, contains the outer surface of the membrane.
  • the piezoresistive resistance elements are integrated (diffused) on the silicon body.
  • the piezoresistive resistance elements forming a Wheatstone bridge are attached to the areas of the membrane where the greatest mechanical stresses occur in order to obtain a correspondingly large electrical signal.
  • the piezoresistive constants are determined by the choice of the resistance material and the crystal orientation.
  • the resistance elements For membranes that are parallel to the (111) crystal plane, the resistance elements must be arranged according to point a).
  • the (111) crystal plane is selected as the base area of the silicon body for a pressure load below 250 bar due to the high tensile strength.
  • the electrical Voltage-pressure characteristic curve With pressure loads over 250 bar, however, the electrical Voltage-pressure characteristic curve to an inadmissible degree non-linear. The result is a non-linearity of over one percent.
  • This great non-linearity is due to the fact that strong compressive stresses in the center of the membrane (compression) and no tensile stresses on the membrane and very low tensile stresses outside the membrane occur on the outer surface. This mechanical stress distribution leads to an uneven change in resistance in the measuring bridge, which results in the non-linearity.
  • the (100) crystal plane is chosen as the base area where the resistance elements are arranged according to point b).
  • Pressure transducers with a silicon body are also known, in which the resistance elements are not integrated (diffused in), but are designed as thin-film resistors.
  • An insulating layer for example made of silicon nitride or silicon oxide, is applied between the silicon body, which has a blind hole-like cavity, and the thin-film resistors. If a pressure load of more than 250 bar acts on this pressure sensor, it has been shown that the electrical voltage-pressure characteristic curve becomes non-linear to an impermissible degree.
  • a pressure sensor is known from EP-A 0 111 640, in which the resistance elements are arranged according to point b).
  • the pressure sensor contains four blind holes, which are arranged in a circle are and whereby four membranes are formed. The outer surfaces of the membranes are parallel to the (100) crystal plane. Outside the circular arrangement, close to each membrane, four resistance elements are arranged at a point where the greatest difference exists between the tangential and radial mechanical stress. By choosing four blind hole-like cavities instead of a large blind hole-like cavity, the breaking strength of the pressure transducer is to be increased.
  • the invention has for its object to provide a pressure transducer in which the non-linearity of the electrical voltage-pressure characteristic is reduced at high pressure loads.
  • At least one further cavity is provided on the outer edge of the membrane.
  • the additional cavity or cavities must in any case be provided in the area of the outer resistance elements. Because of at least one cavity, a much greater mechanical tensile stress is created on the base area than in the known pressure transducer. This reduces the non-linearity of the electrical voltage-pressure characteristic curve.
  • the pressure transducer according to the invention can therefore not only be designed for pressure loads below 250 bar, but also for pressure loads around 1000 bar.
  • two cavities can be arranged as longitudinal grooves next to the resistance elements, which are located on the outer edge of the membrane.
  • Another possibility is to make the blind-hole-like cavity circular in cross-section and to guide the further cavity as an annular groove around the blind-hole-like cavity. This results in a simple construction.
  • the ring groove like the actual membrane, can be produced in the same operation using etching techniques.
  • a pressure sensor is known from US-PS 45 28 855, which consists of a single-crystalline silicon body.
  • the silicon body is arranged on a silicon plate designed as a carrier substrate.
  • the base area of the silicon body (the outer surface of the silicon body, which is opposite to the carrier substrate), lies in the (100) crystal plane.
  • the silicon body Towards the carrier substrate, the silicon body has an open, blind-hole-like cavity and a further cavity designed as an annular groove around the blind-hole-like cavity.
  • At least four piezoresistive resistance elements are applied symmetrically to the outer edge of the inner membrane. Piezoresistive resistance elements are also located on the annular membrane.
  • the silicon body applied to the carrier substrate is located in a housing which has two openings.
  • a liquid can flow through one opening, which acts on the base surface of the silicon body.
  • a liquid flows into the blind hole-like cavity through the other opening via a further opening in the carrier substrate.
  • the inner membrane is therefore part of a differential pressure sensor.
  • this differential pressure sensor there are no linearity problems at high pressure loads (over 250 bar), since the base area is chosen parallel to the (100) crystal plane and the resistance elements are arranged at the edge of the membrane (the resistance elements are arranged according to point b).
  • the pressure transducer according to the invention is designed for static pressure loads, in which two resistance elements are mounted centrally on the membrane and two resistance elements on the outer edge of the membrane.
  • the further cavity serves to linearize the voltage-pressure characteristic.
  • the depths of the blind hole-like cavity and the annular groove are approximately the same, that the distance between the two cavities is approximately equal to half the diameter of the membrane and that the width of the annular groove is a value between half the diameter and the diameter of the membrane.
  • a pressure sensor can be designed so that the membrane is parallel to the (111) crystal plane of the silicon body and that the resistance elements are diffused into it.
  • the resistance elements are constructed as thin-film resistance elements.
  • the crystal orientation or the crystal plane of the base area of the silicon body is arbitrary.
  • the pressure sensor according to FIGS. 1 and 2 contains a cuboid silicon body 1, which is applied to a carrier substrate 2, for example, by anodic bonding.
  • the carrier substrate 2 can be a glass plate, for example.
  • the base surface 3 of the silicon body 1 lies in a (111) crystal plane and is the outer surface which lies opposite the carrier substrate 2.
  • In the silicon body 1 there is a blind hole-like cavity 4, which has a circular cross section and is open towards the carrier substrate 2. Due to this cavity 4, a circular membrane 5 is formed, which is parallel to the (111) crystal plane and on which four resistance elements 6 to 9 are arranged.
  • the resistance elements 6 and 7 are arranged as longitudinal strips parallel in the center of the membrane 5.
  • the resistance elements 8 and 9 are designed as U-shaped strips and arranged in parallel on the outer edge of the membrane 5 such that the U-shaped opening of the resistance elements 8 and 9 of the membrane 5 is opposite.
  • the U-shaped opening of the resistance elements 8 and 9 could also point to the membrane 5.
  • the four resistance elements 6 to 9 are integrated in the silicon body 1 and connected to electrical leads, not shown here, so that a Wheatstone bridge can be formed with these elements.
  • the pressure transducer described so far is known and is used for pressure loads up to 250 bar. At higher pressure loads, there was a non-linearity of over one percent of the electrical voltage-pressure characteristic.
  • the invention reduces the nonlinearity by introducing a further cavity into the silicon body 1. This further cavity is called
  • Annular groove 10 with a U-shaped cross-section is guided around the cavity 4 and opened towards the carrier substrate 2.
  • the depth of the blind hole-like cavity 4 and the annular groove 10 should be approximately the same.
  • the width a1 of the annular groove 10 should have a value between half the diameter a2 and the diameter a2 of the membrane 5 and the distance a3 between the two cavities 4 and 10 should be approximately equal to half the diameter a2 of the membrane 5.
  • pressure transducers have a non-linearity of the electrical voltage-pressure characteristic curve of less than 0.1% at a hydrostatic pressure load of 300 to 1200 bar.
  • the mechanical stress curve at the base which resulted for such a pressure sensor along the line II-II in FIG. 1 for the radial or tangential mechanical stress component, is shown in FIG. 3.
  • the tangential stress curve ⁇ t is shown by a broken line.
  • the radial stress curve ⁇ r as a solid line drawn, positive radial stresses occur between the membrane and the annular groove. Because of this much larger positive radial tension in the pressure sensor according to the invention than in the known pressure sensor, a much lower non-linearity of the characteristic is achieved.
  • FIG. 4 Another pressure sensor is shown in Fig. 4. Except for the arrangement of the resistance elements, the structure of the pressure sensor is identical to that shown in FIGS. 1 and 2.
  • the silicon body 1, which is applied to the carrier substrate 2, also contains the blind hole-like cavity 4 with a circular cross section.
  • the annular groove 10 is guided around the blind hole-like cavity 4. Due to the cavity 4, the membrane 5 is formed.
  • the crystal orientation is arbitrary, i.e. the base area 3 can lie in any crystal plane.
  • the pressure sensor shown in FIG. 4 has no integrated resistance elements but four thin-film resistance elements. As shown in FIGS. 1 and 2, two of these thin-film resistance elements are also arranged in parallel in the center of the membrane 5 as longitudinal strips. The two other thin-film resistance elements 11 and 12 are designed as U-shaped strips and arranged in parallel on the outer edge of the membrane. The last-mentioned thin-film resistance elements 11 and 12 are separated from the silicon body 1 by an insulation layer 13 and 14, respectively, which can be made of silicon nitride or silicon oxide, for example. The four thin-film resistance elements are connected to electrical leads, not shown here, so that a Wheatstone bridge can also be formed with these elements.
  • the pressure sensor shown in FIG. 4 has a low non-linearity of the electrical voltage-pressure characteristic curve at high pressure loads.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Claims (5)

  1. Capteur de pression pour charges de pression statiques muni d'un corps en silicium (1), qui est disposé sur un substrat porteur (2) et qui présente un creux (4) en forme de trou borgne ouvert du côté du substrat porteur (2), de sorte qu'il se forme une membrane (5) située parallèlement à la surface de base du corps en silicium (1), qui constitue la surface extérieure et qui est située dans un plan cristallin à orientation 111 opposé à celui du porteur de substrat (2), sur la surface extérieure de laquelle est disposé un pont de Wheatstone constitué d'éléments de résistance piézorésistifs (6 à 9; 11, 12), deux éléments de résistance (6, 7) étant fixés au centre sur la membrane et deux éléments de résistance (8, 9; 11, 12) au bord extérieur de la membrane, caractérisé en ce que dans le corps en silicium (1), au bord extérieur de la membrane (5), dans la zone des éléments de résistance extérieurs (8, 9; 11, 12), on a prévu au moins encore un autre creux (10) ouvert du côté du porteur de substrat (2).
  2. Capteur de pression selon la revendication 1, caractérisé en ce que le creux (4) en forme de trou borgne présente une section transversale circulaire et en ce que l'autre creux est conçu comme rainure annulaire (10) entourant le creux en forme de trou borgne.
  3. Capteur de pression selon la revendication 2, caractérisé en ce que les profondeurs du creux (4) en forme de trou borgne et de la rainure annulaire (10) sont approximativement égales, en ce que l'écart (a3) séparant les deux creux (4, 10) est approximativement égal à la moitié du diamètre (a2) de la membrane (5) et en ce que la largeur (a1) de la rainure annulaire (10) présente une valeur située entre la moitié de son diamètre (a2) et le diamètre (a2) de la membrane (5).
  4. Capteur de pression selon l'une quelconque des revendications précédentes, caractérisé en ce que la membrane (5) est située parallèlement au plan cristallin à orientation 111 du corps en silicium (1) et en ce que les éléments de résistance (6 à 9) sont intégrés par diffusion.
  5. Capteur de pression selon l'une des revendications 1 à 3, caractérisé en ce que les éléments de résistance sont conçus comme éléments de résistance à couches minces (11, 12).
EP88200095A 1987-01-28 1988-01-20 Capteur de pression pour charges de pression statiques avec corps en silicium Expired - Lifetime EP0276889B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3702412 1987-01-28
DE19873702412 DE3702412A1 (de) 1987-01-28 1987-01-28 Druckaufnehmer mit einem siliziumkoerper

Publications (3)

Publication Number Publication Date
EP0276889A2 EP0276889A2 (fr) 1988-08-03
EP0276889A3 EP0276889A3 (en) 1990-07-04
EP0276889B1 true EP0276889B1 (fr) 1992-12-30

Family

ID=6319654

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88200095A Expired - Lifetime EP0276889B1 (fr) 1987-01-28 1988-01-20 Capteur de pression pour charges de pression statiques avec corps en silicium

Country Status (4)

Country Link
US (1) US5024097A (fr)
EP (1) EP0276889B1 (fr)
JP (1) JP2527779B2 (fr)
DE (2) DE3702412A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006922A1 (de) * 2011-04-07 2012-10-11 SIOS Meßtechnik GmbH Messwandler für die Sensortechnik

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0374883A (ja) * 1989-08-16 1991-03-29 Sanyo Electric Co Ltd 圧力センサのダイヤフラム製造方法
EP0430681A3 (en) * 1989-11-30 1992-05-20 Honeywell Inc. Thick diaphragm pressure transducer
DE59006238D1 (de) * 1989-12-06 1994-07-28 Siemens Ag Albis Kraftwandler.
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
NO179651C (no) * 1994-03-07 1996-11-20 Sinvent As Trykkmåler
NO304328B1 (no) * 1996-02-27 1998-11-30 Nyfotek As TrykkmÕler
US6240785B1 (en) 1996-07-22 2001-06-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Cryogenic, absolute, high pressure sensor
JP3206467B2 (ja) * 1996-12-25 2001-09-10 トヨタ自動車株式会社 太陽電池セルの冷却液封止構造
US6044711A (en) * 1997-01-10 2000-04-04 Psi-Tronix, Inc. Force sensing apparatus
DE19810756A1 (de) * 1998-03-12 1999-09-23 Fraunhofer Ges Forschung Sensoranordnung zur Messung von Druck, Kraft oder Meßgrößen, die sich auf Druck oder Kraft zurückführen lassen, Verfahren zur Herstellung der Sensoranordnung, Sensorelement und Verfahren zur Herstellung des Sensorelements
US6612175B1 (en) 2000-07-20 2003-09-02 Nt International, Inc. Sensor usable in ultra pure and highly corrosive environments
US7152478B2 (en) * 2000-07-20 2006-12-26 Entegris, Inc. Sensor usable in ultra pure and highly corrosive environments
US7028552B2 (en) * 2004-05-17 2006-04-18 Kavlico Corporation Reliable piezo-resistive pressure sensor
CN101209382B (zh) * 2006-12-27 2010-06-23 鸿富锦精密工业（深圳）有限公司 动作传感装置
DE102011112935B4 (de) 2011-09-13 2015-02-12 Micronas Gmbh Kraftsensor
DE102014119400A1 (de) * 2014-12-22 2016-06-23 Endress + Hauser Gmbh + Co. Kg Druckwandler und Verfahren zum Betreiben eines solchen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641812A (en) * 1970-05-20 1972-02-15 Conrac Corp Silicon diaphragm with integral bridge transducer
US3820401A (en) * 1972-11-07 1974-06-28 Sperry Rand Corp Piezoresistive bridge transducer
DE2617731C3 (de) * 1976-04-23 1979-06-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Miniaturdruckmeßwandler
JPS56114378A (en) * 1980-02-15 1981-09-08 Hitachi Ltd Semiconductor pressure sensor
JPS5750479A (en) * 1980-09-10 1982-03-24 Hitachi Ltd Detector for detecting pressure and pressure difference of semiconductor
JPS57125827A (en) * 1981-01-29 1982-08-05 Mitsubishi Electric Corp Semiconductor pressure sensor for car
US4444054A (en) * 1982-08-30 1984-04-24 Ametek, Inc. Temperature compensation for diffused semiconductor strain devices
JPS5952727A (ja) * 1982-09-20 1984-03-27 Hitachi Ltd 半導体圧力センサ
GB2128806A (en) * 1982-09-29 1984-05-02 Itt Ind Ltd Pressure transducer
US4462018A (en) * 1982-11-05 1984-07-24 Gulton Industries, Inc. Semiconductor strain gauge with integral compensation resistors
US4528855A (en) * 1984-07-02 1985-07-16 Itt Corporation Integral differential and static pressure transducer
US4592238A (en) * 1985-04-15 1986-06-03 Gould Inc. Laser-recrystallized diaphragm pressure sensor and method of making

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006922A1 (de) * 2011-04-07 2012-10-11 SIOS Meßtechnik GmbH Messwandler für die Sensortechnik
DE102011006922B4 (de) * 2011-04-07 2013-07-11 SIOS Meßtechnik GmbH Messwandler für die Sensortechnik

Also Published As

Publication number Publication date
EP0276889A2 (fr) 1988-08-03
DE3702412A1 (de) 1988-08-18
JPS63191936A (ja) 1988-08-09
EP0276889A3 (en) 1990-07-04
DE3877006D1 (de) 1993-02-11
DE3702412C2 (fr) 1990-01-04
JP2527779B2 (ja) 1996-08-28
US5024097A (en) 1991-06-18

Similar Documents

Publication Publication Date Title
EP0276889B1 (fr) Capteur de pression pour charges de pression statiques avec corps en silicium
DE3814109C2 (de) Kondensatoranordnung zur Verwendung in Druckfühlern
DE3232817C1 (de) Biegefeder
DE69521890T2 (de) Stabilisierter drucksensor
DE4133009C2 (de) Kapazitiver Drucksensor und Herstellungsverfahren hierzu
DE69111038T2 (de) Beschleunigungsmesser.
DE3505926A1 (de) Kapazitiver druckmesser fuer absolutdruck
DE2809549A1 (de) Halbleiter-druckwandler
DE1802669B2 (de) Messumformer
CH673897A5 (fr)
DE2829425C3 (de) Vorrichtung zum Messen von Beschleunigungen an schwingenden Körpern
DE2900614A1 (de) Dehnungsmesslastwandler
DE4133008C2 (de) Kapazitive Drucksensoren und Herstellungsverfahren hierzu
DE3218577C2 (fr)
DE69003763T2 (de) Membran-Deformationsmessvorrichtung.
DE3814110A1 (de) Kapazitiver druckgeber
DE69005370T2 (de) Membranmessfühler mit Konzentration von Deformationen.
DE1473442A1 (de) Dehnungsmesser
EP0758080B1 (fr) Dispositif micromécanique avec un diaphragme perforé sans contraintes
DE1447995B2 (de) Elektromechanischer Wandler mit einem Piezo-Wi'1 er Standselement
DE3233356C2 (de) Druckmeßfühler
DE3148403A1 (de) "differenzdruckmesser"
EP0024035A1 (fr) Sonde piézorésistive
DE2825222C2 (de) Druckmeßumformer
DE3782879T2 (de) Optische schaltvorrichtung.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB IT

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB IT

17P Request for examination filed

Effective date: 19901219

17Q First examination report despatched

Effective date: 19910909

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT

REF Corresponds to:

Ref document number: 3877006

Country of ref document: DE

Date of ref document: 19930211

ITF It: translation for a ep patent filed

Owner name: ING. C. GREGORJ S.P.A.

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 19930324

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

REG Reference to a national code

Ref country code: FR

Ref legal event code: TP

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20021227

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20030110

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20030124

Year of fee payment: 16

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040120

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040803

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20040120

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040930

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050120