EP0035182B1 - Halbleiter-Strahlungsfühleranordnung für einen Röntgen-Belichtungsautomat - Google Patents

Halbleiter-Strahlungsfühleranordnung für einen Röntgen-Belichtungsautomat Download PDF

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Publication number
EP0035182B1
EP0035182B1 EP81101195A EP81101195A EP0035182B1 EP 0035182 B1 EP0035182 B1 EP 0035182B1 EP 81101195 A EP81101195 A EP 81101195A EP 81101195 A EP81101195 A EP 81101195A EP 0035182 B1 EP0035182 B1 EP 0035182B1
Authority
EP
European Patent Office
Prior art keywords
radiation sensor
semiconductor radiation
ray
substrate
sensor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP81101195A
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English (en)
French (fr)
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EP0035182A2 (de
EP0035182A3 (en
Inventor
Tetsuro Kurihara
Kosaku Nishio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP0035182A2 publication Critical patent/EP0035182A2/de
Publication of EP0035182A3 publication Critical patent/EP0035182A3/en
Application granted granted Critical
Publication of EP0035182B1 publication Critical patent/EP0035182B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08—Electrical details
    • H05G1/26—Measuring, controlling or protecting
    • H05G1/30—Controlling
    • H05G1/38—Exposure time
    • H05G1/42—Exposure time using arrangements for switching when a predetermined dose of radiation has been applied, e.g. in which the switching instant is determined by measuring the electrical energy supplied to the tube
    • H05G1/44—Exposure time using arrangements for switching when a predetermined dose of radiation has been applied, e.g. in which the switching instant is determined by measuring the electrical energy supplied to the tube in which the switching instant is determined by measuring the amount of radiation directly

Definitions

  • This invention relates to a semiconductor radiation sensor arrangement for an automatic X-ray exposure control apparatus provided in front of an X-ray film to be exposed to X-rays.
  • An X-ray diagnostic equipment for projecting X-rays passing through an object on an X-ray film includes an X-ray irradiation control device for controlling X-ray energy and an X-ray dosage to an optimum level for radiography (X-ray photography).
  • Radiography conditions required for the X-ray diagnostic equipment are determined by an anode voltage of an X-ray tube, a magnitude of current of the X-ray tube and a period of time for X-ray irradiation. The conditions may be primarily determined in accordance with a portion of an object to be examined and the extent to which X-rays are absorbed in the portion.
  • the radiography conditions are usually determined in accordance with the thickness of a particular portion of an object to be examined, on the assumption that the thickness of the portion and an amount of X-rays absorbed therein have a certain relationship.
  • the relationship varies with the position of a portion of an object to be examined.
  • an amount of X-rays absorbed even in the same portion changes from one object to another, if the object is a human body. For this reason an automatic X-ray exposure control apparatus has been developed to provide an X-ray photograph with a proper exposure with respect to any portion of an object.
  • This automatic X-ray exposure control apparatus comprises a radiation sensor for converting an emitted X-ray dosage into an electric signal, and an X-ray controller for adjusting the operation of an X-ray generating unit in accordance with the converted electric signal.
  • the above-mentioned type of automatic X-ray exposure control apparatus is disclosed in the document US-A-4,121,104, for example, in which a radiation sensor is set between an object and X-ray film and an X-ray controller stops the supply of voltage to an X-ray tube when an X-ray dosage detected by the sensor reaches an optimum level to provide the X-ray film with proper exposure.
  • a radiation sensor is disposed behind an X-ray film to detect X-rays penetrating an object and the X-ray film, as disclosed in document US-A-4,053,774.
  • X-rays considerable amounts of X-rays are absorbed while passing through the object and the X-ray film, making it necessary to apply a highly sensitive radiation sensor or a high gain amplifier and consequently involving great inconvenience. Therefore, it is desirable to set the radiation sensor in front of the X-ray film. In this case, however, care should be taken to prevent the shadow of the sensor itself from being impressed on an X-ray film.
  • Document US-A-4,095,109 discloses a radiation sensor which is set in front of an X-ray film, prevents the shadow of the radiation sensor from being formed on the X-ray film.
  • a graphite layer and electrode layer are formed of a vacuum-deposited electrically conductive material having a low atomic number. Both end portions of the graphite layer and electrode layer have a tapered cross section. It further indicates that several measuring fields can be provided by forming a plurality of electrode layers.
  • an X-ray dosage is measured by ionizing current resulting from X-rays entering an ionization chamber which is defined between two electrode plates.
  • this arrangement unavoidably renders the X-ray sensor thick. Therefore, the radiation sensor of this type has the drawback that an X-ray film is considerably spaced from an object, resulting in an unnecessary increase in the geometrical magnification rate of X-rays.
  • Other radiation sensors for the exposure control apparatus include a sodium iodine (Nal) scintillator, and a photomultiplier, respectively.
  • Document DE-A-2,806,858 discloses a semiconductor radiation sensor using a silicon single crystal containing an N type impurity at a lower concentration than 1 x 10" cm- 3 .
  • This semiconductor radiation sensor has the advantage that it is compact and thin, and consequently has a light weight.
  • Such a thin semiconductor radiation sensor may be applied to an automatic X-ray exposure control in order to reduce the geometrical magnification rate of X-rays.
  • a radiation sensor and a scattered X-ray eliminating grid are provided between an object and X-ray film. For practical purposes, therefore, it is ultimately necessary to reduce the total thickness of the radiation sensor and the scattered X-ray eliminating grid.
  • document US-A-2,747,104 discloses an interval timing apparatus comprising a semiconductor radiation sensor arrangement for an automatic X-ray exposure control apparatus which controls an X-ray dosage to provide an X-ray film with proper exposure.
  • the semiconductor radiation sensor arrangement is disposed in front of the X-ray film and comprises a substrate, a semiconductor radiation sensor which is fixed in a penetrating hole of said substrate, leads which are formed of a conductive metallic layer and are connected to the electrodes of said semiconductor radiation sensor, and a Bucky diaphragm disposed in parallel with said substrate and said semiconductor radiation sensor.
  • this invention provides semiconductor radiation sensor arrangement for an automatic X-ray exposure control apparatus which controls an X-ray dosage to provide an X-ray film with proper exposure
  • said semiconductor radiation sensor arrangement disposed in front of the X-ray film comprises a substrate, a semiconductor radiation sensor which is arranged in a penetrating hole of said substrate, leads which are formed of a conductive metallic layer and are connected to the electrodes of said semiconductor radiation sensor, and at least one scattered X-ray eliminating grid disposed in parallel with said substrate (30) and said semiconductor radiation sensor
  • said semiconductor radiation sensor arrangement being characterized in that a mount bored with a tapering penetrating hole is securely engaged with the hole penetrating said substrate, the peripheral wall of said mount and that of said penetrating hole of said substrate being tapered in cross section in the similar form, that the semiconductor radiation sensor is fixed in said penetrating hole of said mount and has a sufficiently small thickness to cause the X-rays to be attenuated to a smaller extent than 800 micrometer
  • a further technical advantage of this invention is that an integral assembly of the scattered X-ray eliminating grid and semiconductor radiation sensors offers easy handling.
  • X-rays emitted from an X-ray tube 20 pass through an object 22, are detected by an X-ray detecting apparatus 24, and impinge on a direct radiography film 26 (hereinafter simply referred to as "an X-ray film") to form a radiographic image of an object thereon.
  • the X-ray film 26 is received in a cassette together with an X-ray intensifying screen.
  • the cassette is supported by a cassette holder. (Neither X-ray intensifying screen nor cassette is indicated.)
  • the X-ray detecting apparatus 24 includes a plurality of ring-shaped semiconductor radiation sensors 28 fixed in holes penetrating mounts, respectively.
  • the mounts are, respectively, securely engaged with holes penetrating a substrate 30 which is rigidly supported at the marginal portions by a frame 29.
  • the X-ray detecting apparatus 24 detects an X-ray dosage to convert it into an electric signal which in turn is coupled through leads 32 to an amplifier 34.
  • the electric signal is amplified by the amplifier 34, and thereafter supplied to a control signal generator 36.
  • the control signal generator 36 includes an integrator which integrates the output signal of the amplifier 34 with respect to time and a comparator which compares the output of the integrator with a reference signal indicative of an optimum X-ray exposure condition, and provides an X-ray controller 38 with an X-ray shutting signal when the output level of the integrator reaches that of the reference signal.
  • the optimum X-ray exposure condition is determined to properly impress a radiographic image of an object 22 on the X-ray film 26.
  • the X-ray controller 38 stops voltage supply to a high voltage generator 40.
  • a plurality of semiconductor radiation sensors 28 may be disposed on any required measuring fields in the positions substantially corresponding to, for example, the breast, head, backbone and abdomen of the human body of which an X-ray photograph (radiograph) is taken.
  • Figs. 2 and 3 indicate in enlargement part of an X-ray detecting apparatus 24 according to one embodiment of this invention.
  • Fig. 3 is a sectional view of said X-ray detecting apparatus 24 on line III-III of Fig. 2.
  • the ring-shaped semiconductor radiation sensor 28 has an inner diameter of 25 mm and has its thickness of 300 micrometers to prevent its shadow from being impressed on an X-ray film.
  • the semiconductor radiation sensor 28 is fixed to the surface of a ring-shaped mount 42 which is made from acrylic resin, for example, polymethyl methacrylate with an outer diameter of 40 mm and inner diameter of 25 mm. Both front and back sides of the semiconductor radiation sensor 28 are coated with an aluminum electrode layer (not shown).
  • the mount 42 is securely engaged with a hole penetrating the substrate 30 made from, for example, the same polymethyl methacrylate or carbon fiber reinforced plastics (CFRP). Leads 31 and 33 connected to the electrodes of the semiconductor radiation sensor 28 extend along the substrate 30.
  • the polymethyl methacrylate which little absorbs X-rays is favorably accepted.
  • the semiconductor radiation sensor 28 should preferably be made as thin as 100 to 800 micrometers of aluminum equivalent thickness in order to reduce its absorption of X-rays at anode voltage 50 to 150 kV of the X-ray tube 20 and prevent its shadow from being impressed on an X-ray film.
  • the leads 31 and 33 be formed of an aluminum layer having a smaller thickness than 80 micrometers.
  • the semiconductor radiation sensor 28, mount 42, substrate 30 and leads 31 and 33 are made from a specified material with a prescribed thickness.
  • the outer portion 41 of the peripheral wall of the mount 42 (namely, that portion of the mount 42 which is engaged with the substrate 30), and the inner portion 43 of the peripheral wall of the mount 42 jointly define a tapered form.
  • the mount 42 thus constructed suppresses the ununiform attenuation of X-rays in the boundary between the mount 42 and the substrate 30, and the boundary between the mount 42 and the semiconductor radiation sensor 28. Therefore, the shadows of the boundaries are prevented from being impressed on an X-ray film, thereby ensuring a distinct image.
  • Thin insulation layers 46 and 48 formed of, for example, mica are provided in parallel with both sides of the substrate 30. Further, electromagnetic shielding members 50 and 52 made of, for example, aluminum foil are respectively mounted on the insulation layers 46 and 48, thereby preventing an electric signal generated by the semiconductor radiation sensor 28 from being disturbed by noises.
  • a cover 54 made from, for example, polyester film is mounted on the aluminum foil 52 to protect the semiconductor radiation sensor 28 and also to render the X-ray detecting apparatus 24 attractive.
  • a grid 56 which is made of, for example, lead (Pb) to eliminate scattered X-rays and has a thickness of 3 mm is mounted on the aluminum foil 50 provided on that side of the X-ray detecting apparatus 24 on which X-rays are introduced.
  • the grid 56 is put, proper selection is made of the material filled in a space defined between every two adjacent parallel arranged grid components (for example, aluminum or wood); the grid ratio (for example, 8:1 or 10:1); the number of the grid components (for example 34 lp/cm, or 40 lp/cm, wherein lp denotes a line pair); and a distance from the X-ray focus (for example, 80 cm or 100 cm).
  • the grid ratio for example, 8:1 or 10:1
  • the number of the grid components for example 34 lp/cm, or 40 lp/cm, wherein lp denotes a line pair
  • a distance from the X-ray focus for example, 80 cm or 100 cm.
  • the mechanically strong grid 56 is used as one of the components of the X-ray detecting apparatus 24, making it possible to use a thin substrate 30.
  • the grid 56 concurrently acts as a protective member for the X-ray detecting apparatus 24, making it unnecessary to provide any protective layer such as the cover 54 on that side of the X-ray detecting apparatus 24 on which the grid 56 is set. Therefore, a typical configuration of X-ray detecting apparatus 24 can be chosen to have a thickness of about 6 mm, thereby reducing a distance between the object 22 and the X-ray film 26 and consequently the rate at which X-rays are geometrically magnified.
  • the material of the substrate 30 can be selected over a wide range of mechanical strength, allowing for the easy design of the X-ray detecting apparatus 24.
  • Fig. 4 Description is now given with reference to Fig. 4 of an X-ray detecting apparatus 60 according to another embodiment of this invention.
  • two grids are generally provided between the object 22 and the X-ray film 26 (see Fig. 1), in such a manner that the parallel arranged components of one of the paired grids intersect those of the other grid at right angles.
  • the paired grids are hereinafter referred to as "crosswise intersecting grids".
  • two grids 56 and 58 (Fig. 4) are integrally assembled characteristically of this invention with the semiconductor radiation sensors 28 to constitute the X-ray detecting apparatus 60.
  • the cover 54 of the X-ray detecting apparatus 24 of Fig. 2 is replaced by the second grid 58 crosswise intersecting the first grid 56.
  • the crosswise intersecting grids 56 and 58 not only more effectively eliminate scattered X-rays but also make a distance between an object 22 and X-ray film 26 shorter than the conventional arrangement in which the two grids 56 and 58 and semiconductor radiation sensors 28 are separately provided.
  • the first and second grids 56 and 58 should preferably be positioned on both sides of the substrate 30 in crosswise intersecting relationship. However, it is possible to provide both crosswise intersecting grids 56 and 58 on one side of the substrate 30 in a mutually superposed state. In the latter case, it is advised to provide a cover on that side of the substrate 30 on which said grids 56 and 58 are not provided.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
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  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • X-Ray Techniques (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Claims (7)

1. Halbleiter-Strahlungsfühleranordnung für einen Röntgen-Belichtungsautomaten, der eine Röntgen(strahlungs)dosis zur Lieferung eines einwandfrei belichteten Röntgenfilms (26) regelt, wobei die vor dem Röntgenfilm (26) angeordnete Halbleiter-Strahlungsfühleranordnung (24) ein Substrat (30), eine in einer durchgehenden Öffnung des Substrats (30) angeordneten Halbleiter-Strahlungsfühler (28), Zuleitungen (31, 33), die aus einer leitenden Metallschicht gebildet und mit den Elektroden des Halbleiter-Strahlungsfühlers (28) verbunden sind, sowie mindestens ein gestreute Röntgenstrahlung beseitigendes Gitter (56, 58), das parallel zum Substrat (30) und zum Halbleiter-Strahlungsfühler (28) angeordnet ist, umfaßt, dadurch gekennzeichnet, daß ein Träger (42) mit einer konischen, durchgehenden Öffnung sicher bzw. fest in die durchgehende Öffnung des Substrats (30) eingesetzt ist, wobei die Umfangswand des Trägers (42) und diejenige der durchgehenden Öffnung des Substrats (30) im Querschnitt eine jeweils ähnliche konische oder sich verjüngende Form besitzen, daß der Halbleiter-Strahlungsfühler (28) in der durchgehenden Öffnung des Trägers (42) festgelegt ist und eine ausreichend kleine Dicke besitzt, so daß die Röntgenstrahlen um weniger als 800 um (micron meters) Aluminiumäquivalentdicke gedämpft werden, daß die Zuleitungen (31,33) auf einer Aluminiumschicht mit einer Dicke von weniger als 80 um ausgebildet sind und daß das Gitter (56, 58) und der Halbleiter-Strahlungsfühler eine einheitliche oder integrale Anordnung bilden.
2. Halbleiter-Strahlungsfühleranordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Gitter (56,58) auf beiden Seiten des Substrats (30) in einander kreuzweise schneidender Beziehung angeordnet sind.
3. Halbleiter-Strahlungsfühleranordnung nach Anspruch 1 oder 2, gekennzeichnet, durch eine zum Abdecken des Substrats (30) und/oder der Zuleitungen (31, 33) angeordnete Isolierschicht (46, 48) und ein aus Metall geformtes und an der Isolierschicht (46, 48) angebrachtes elektromagnetisches Abschirmelement (50, 52).
4. Halbleiter-Strahlungsfühleranordnung nach Anspruch 3, dadurch gekennzeichnet, daß das elektromagnetische Abschirmelement (50, 52) aus Aluminium geformt ist.
5. Halbleiter-Strahlungsfühleranordnung nach Anspruch 3, dadurch gekennzeichnet, daß die Isolierschicht (46, 48) aus Glimmer hergestellt ist.
6. Halbleiter-Strahlungsfühleranordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß das Substrat (30) aus Acrylharz hergestellt ist.
7. Halbleiter-Strahlungsfühleranordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß der Halbleiter-Strahlungsfühler eine solche Dicke besitzt, daß die Röntgenstrahlen um weniger als 100-800 pm Aluminiumäquivalentdicke gedämpft werden.
EP81101195A 1980-02-27 1981-02-19 Halbleiter-Strahlungsfühleranordnung für einen Röntgen-Belichtungsautomat Expired EP0035182B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23706/80 1980-02-27
JP2370680A JPS56119876A (en) 1980-02-27 1980-02-27 Semiconductor x-ray detector

Publications (3)

Publication Number Publication Date
EP0035182A2 EP0035182A2 (de) 1981-09-09
EP0035182A3 EP0035182A3 (en) 1983-01-26
EP0035182B1 true EP0035182B1 (de) 1985-11-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP81101195A Expired EP0035182B1 (de) 1980-02-27 1981-02-19 Halbleiter-Strahlungsfühleranordnung für einen Röntgen-Belichtungsautomat

Country Status (6)

Country Link
US (1) US4403150A (de)
EP (1) EP0035182B1 (de)
JP (1) JPS56119876A (de)
AU (1) AU528620B2 (de)
BR (1) BR8101191A (de)
DE (1) DE3172939D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945A (ja) * 1982-06-22 1984-01-05 株式会社東芝 Ｘ線撮影装置
DE3242067A1 (de) * 1982-11-13 1984-05-17 Koch & Sterzel Gmbh & Co, 4300 Essen Roentgenstrahlenmesskammer mit siliziumhalbleiterdetektoren
JPS60119100A (ja) * 1983-11-30 1985-06-26 Toshiba Corp Ｘ線装置
DE3702914A1 (de) * 1986-02-11 1987-08-13 Radiante Oy Verfahren zur herstellung von roentgenaufnahmen
DE8621546U1 (de) * 1986-08-11 1987-12-10 Siemens AG, 1000 Berlin und 8000 München Röntgendetektorsystem
US5066861A (en) * 1987-07-22 1991-11-19 Kanegafuchi Chemical Industry Co., Ltd. X ray detecting device
US5264328A (en) * 1992-04-24 1993-11-23 International Business Machines Corporation Resist development endpoint detection for X-ray lithography
DE4446865C2 (de) * 1994-12-27 2001-06-21 Siemens Ag Mammographie-Röntgengerät
FR2732473B1 (fr) * 1995-03-31 1997-06-13 Sagem Dosimetre a eclairage par l'arriere
US5585638A (en) * 1995-12-14 1996-12-17 General Electric Company X-ray detector for automatic exposure control of an imaging apparatus
DE19811556A1 (de) * 1998-03-17 1999-09-23 Philips Patentverwaltung Strahlungsmeßeinrichtung mit einer Ionisatonskammer
JP5629445B2 (ja) * 2009-09-25 2014-11-19 キヤノン株式会社 Ｘ線画像撮影装置

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US2747104A (en) * 1951-10-06 1956-05-22 Gen Electric Interval timing apparatus
US2824970A (en) * 1952-04-04 1958-02-25 Ledin Sven Harald Secondary diaphragms for x-ray radiography
US3255351A (en) * 1963-04-19 1966-06-07 Nuclear Diodes Inc Particle detector of the semiconductor type
US4039841A (en) * 1976-02-11 1977-08-02 Spectronics Corporation X-ray grid adaptor
US4082957A (en) * 1976-04-29 1978-04-04 Morlan Alva F X-ray absorbing wedge for improving soft tissue outline
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector
JPS5574480A (en) * 1978-11-30 1980-06-05 Toshiba Corp Semiconductor x-ray detector for use in x-ray exposure control device
US4288264A (en) * 1979-11-21 1981-09-08 Emi Limited Detector construction

Also Published As

Publication number Publication date
US4403150A (en) 1983-09-06
EP0035182A2 (de) 1981-09-09
DE3172939D1 (en) 1986-01-02
AU528620B2 (en) 1983-05-05
JPS56119876A (en) 1981-09-19
AU6746581A (en) 1982-12-23
EP0035182A3 (en) 1983-01-26
BR8101191A (pt) 1981-09-01
JPS645268B2 (de) 1989-01-30

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