DK2972873T3 - Selektiv selvreferencelæsning - Google Patents

Selektiv selvreferencelæsning Download PDF

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Publication number
DK2972873T3
DK2972873T3 DK14775795.9T DK14775795T DK2972873T3 DK 2972873 T3 DK2972873 T3 DK 2972873T3 DK 14775795 T DK14775795 T DK 14775795T DK 2972873 T3 DK2972873 T3 DK 2972873T3
Authority
DK
Denmark
Prior art keywords
reference reading
selective self
selective
self
reading
Prior art date
Application number
DK14775795.9T
Other languages
English (en)
Inventor
Wayne Kinney
Gurtej S Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DK2972873T3 publication Critical patent/DK2972873T3/da

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751—Error or fault detection not based on redundancy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0727—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a storage system, e.g. in a DASD or network based storage system
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1677—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DK14775795.9T 2013-03-14 2014-02-27 Selektiv selvreferencelæsning DK2972873T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/804,598 US9025364B2 (en) 2013-03-14 2013-03-14 Selective self-reference read
PCT/US2014/019148 WO2014158657A1 (en) 2013-03-14 2014-02-27 Selective self-reference read

Publications (1)

Publication Number Publication Date
DK2972873T3 true DK2972873T3 (da) 2022-04-04

Family

ID=51526456

Family Applications (1)

Application Number Title Priority Date Filing Date
DK14775795.9T DK2972873T3 (da) 2013-03-14 2014-02-27 Selektiv selvreferencelæsning

Country Status (8)

Country Link
US (5) US9025364B2 (da)
EP (2) EP3996094A1 (da)
JP (1) JP2016516255A (da)
KR (1) KR101810307B1 (da)
CN (2) CN108717858B (da)
DK (1) DK2972873T3 (da)
TW (3) TWI604443B (da)
WO (1) WO2014158657A1 (da)

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US10146601B2 (en) * 2013-06-12 2018-12-04 Everspin Technologies, Inc. Methods and devices for healing reset errors in a magnetic memory
US9281041B1 (en) 2014-12-16 2016-03-08 Honeywell International Inc. Delay-based read system for a magnetoresistive random access memory (MRAM) bit
US9666259B1 (en) * 2016-04-12 2017-05-30 Qualcomm Incorporated Dual mode sensing scheme
US10067827B2 (en) * 2016-06-29 2018-09-04 Micron Technology, Inc. Error correction code event detection
US10553277B2 (en) * 2016-11-21 2020-02-04 SK Hynix Inc. Cross point array type phase change memory device and method of driving the same
JP2018156556A (ja) * 2017-03-21 2018-10-04 東芝メモリ株式会社 計算機システム及びメモリデバイス
US10304514B2 (en) 2017-07-05 2019-05-28 Micron Technology, Inc. Self-reference sensing for memory cells
US10395715B2 (en) 2017-08-25 2019-08-27 Micron Technology, Inc. Self-referencing memory device
JP2019053794A (ja) 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体記憶装置
US10403336B2 (en) 2017-12-28 2019-09-03 Micron Technology, Inc. Techniques for precharging a memory cell
CN110033801B (zh) * 2018-01-11 2021-01-12 上海磁宇信息科技有限公司 一种用于磁性随机存储器的冗余参照布局电路
US10403378B1 (en) * 2018-02-09 2019-09-03 Micron Technology, Inc. Performing an operation on a memory cell of a memory system at a frequency based on temperature
US10854289B2 (en) 2018-05-14 2020-12-01 Samsung Electronics Co., Ltd. Resistive memory device providing reference calibration, and operating method thereof
US10460782B1 (en) 2018-08-06 2019-10-29 Globalfoundaries Inc. Integrated circuits having single state memory reference cells and methods for operating the same
DE102018132503B4 (de) * 2018-12-17 2020-09-17 Infineon Technologies Ag Detektion von Codewörtern
JP2020161201A (ja) 2019-03-27 2020-10-01 キオクシア株式会社 半導体記憶装置
KR20220148866A (ko) * 2020-03-03 2022-11-07 마이크론 테크놀로지, 인크 메모리 셀을 위한 카운터 기반 감지 증폭기 방법
FR3111439B1 (fr) * 2020-06-12 2023-06-30 St Microelectronics Rousset Procédé de gestion des requêtes d’accès à une mémoire vive et système correspondant
US11978491B2 (en) * 2021-09-24 2024-05-07 Sandisk Technologies Llc Mixed current-forced read scheme for MRAM array with selector
US11972822B2 (en) * 2021-09-24 2024-04-30 Sandisk Technologies Llc Programmable ECC for MRAM mixed-read scheme

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US6445624B1 (en) * 2001-02-23 2002-09-03 Micron Technology, Inc. Method of synchronizing read timing in a high speed memory system
JP2003050738A (ja) * 2001-08-03 2003-02-21 Elpida Memory Inc キャリブレーション方法及びメモリシステム
US6654278B1 (en) * 2002-07-31 2003-11-25 Motorola, Inc. Magnetoresistance random access memory
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
KR100521363B1 (ko) * 2002-10-07 2005-10-13 삼성전자주식회사 마그네틱 랜덤 액세스 메모리의 데이터 센싱 회로 및 그방법
US6914808B2 (en) * 2002-12-27 2005-07-05 Kabushiki Kaisha Toshiba Magnetoresistive random access memory device
US7370260B2 (en) 2003-12-16 2008-05-06 Freescale Semiconductor, Inc. MRAM having error correction code circuitry and method therefor
US7154798B2 (en) * 2004-04-27 2006-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM arrays and methods for writing and reading magnetic memory devices
US7327868B2 (en) * 2004-06-04 2008-02-05 Hewlett-Packard Development Company, L.P. Magnetic stripline scanner
US7624209B1 (en) * 2004-09-15 2009-11-24 Xilinx, Inc. Method of and circuit for enabling variable latency data transfers
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US7577018B2 (en) 2006-03-07 2009-08-18 Tdk Corporation Readout circuit of magnetic memory
US7865797B2 (en) * 2006-11-16 2011-01-04 Freescale Semiconductor, Inc. Memory device with adjustable read reference based on ECC and method thereof
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US7660152B2 (en) * 2008-04-30 2010-02-09 International Business Machines Corporation Method and apparatus for implementing self-referencing read operation for PCRAM devices
US8116123B2 (en) 2008-06-27 2012-02-14 Seagate Technology Llc Spin-transfer torque memory non-destructive self-reference read method
US8310866B2 (en) * 2008-07-07 2012-11-13 Qimonda Ag MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
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US7898838B2 (en) 2008-10-31 2011-03-01 Seagate Technology Llc Resistive sense memory calibration for self-reference read method
US7830693B2 (en) * 2008-11-12 2010-11-09 Seagate Technology Llc NAND based resistive sense memory cell architecture
US7940592B2 (en) * 2008-12-02 2011-05-10 Seagate Technology Llc Spin-torque bit cell with unpinned reference layer and unidirectional write current
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Also Published As

Publication number Publication date
TW201447880A (zh) 2014-12-16
CN108717858A (zh) 2018-10-30
KR101810307B1 (ko) 2017-12-18
US9025364B2 (en) 2015-05-05
EP3996094A1 (en) 2022-05-11
TWI604443B (zh) 2017-11-01
CN105027085B (zh) 2018-06-22
KR20150115901A (ko) 2015-10-14
CN108717858B (zh) 2023-04-18
US10585735B2 (en) 2020-03-10
US20170322840A1 (en) 2017-11-09
US20140269029A1 (en) 2014-09-18
US20150212871A1 (en) 2015-07-30
EP2972873A1 (en) 2016-01-20
EP2972873A4 (en) 2016-11-23
TWI555019B (zh) 2016-10-21
US11379286B2 (en) 2022-07-05
EP2972873B1 (en) 2022-01-26
CN105027085A (zh) 2015-11-04
US11789796B2 (en) 2023-10-17
TW201802804A (zh) 2018-01-16
TW201640500A (zh) 2016-11-16
TWI620175B (zh) 2018-04-01
US20220318084A1 (en) 2022-10-06
US9715419B2 (en) 2017-07-25
US20200257584A1 (en) 2020-08-13
WO2014158657A1 (en) 2014-10-02
JP2016516255A (ja) 2016-06-02

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