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DE69917010D1 - Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben - Google Patents

Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben

Info

Publication number
DE69917010D1
DE69917010D1 DE1999617010 DE69917010A DE69917010D1 DE 69917010 D1 DE69917010 D1 DE 69917010D1 DE 1999617010 DE1999617010 DE 1999617010 DE 69917010 A DE69917010 A DE 69917010A DE 69917010 D1 DE69917010 D1 DE 69917010D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE1999617010
Other languages
English (en)
Other versions
DE69917010T2 (de )
Inventor
Takanori Kido
Kagetaka Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko KK
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
DE1999617010 1998-02-24 1999-02-24 Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben Active DE69917010D1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4228898 1998-02-24
PCT/JP1999/000844 WO1999043761A1 (en) 1998-02-24 1999-02-24 Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same

Publications (1)

Publication Number Publication Date
DE69917010D1 true DE69917010D1 (de) 2004-06-09

Family

ID=12631866

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1999617010 Active DE69917010T2 (de) 1998-02-24 1999-02-24 Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
DE1999617010 Active DE69917010D1 (de) 1998-02-24 1999-02-24 Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1999617010 Active DE69917010T2 (de) 1998-02-24 1999-02-24 Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben

Country Status (7)

Country Link
US (2) US6436835B1 (de)
EP (1) EP1061111B1 (de)
JP (1) JP3672493B2 (de)
KR (1) KR100583842B1 (de)
DE (2) DE69917010T2 (de)
ES (1) ES2216490T3 (de)
WO (1) WO1999043761A1 (de)

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US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
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JP4554363B2 (ja) * 2002-07-22 2010-09-29 Agcセイミケミカル株式会社 半導体用研磨剤、その製造方法及び研磨方法
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
KR100627510B1 (ko) * 2002-12-30 2006-09-22 주식회사 하이닉스반도체 나이트라이드용 cmp 슬러리
WO2004061925A1 (ja) 2002-12-31 2004-07-22 Sumitomo Mitsubishi Silicon Corporation 化学的機械研磨用スラリー組成物、これを利用した半導体素子の表面平坦化方法及びスラリー組成物の選択比制御方法
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
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US6910951B2 (en) 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
KR100570122B1 (ko) * 2003-05-12 2006-04-11 주식회사 사무코 나노토포그라피 효과를 보상할 수 있는 화학기계적 연마용슬러리 조성물 및 이를 이용한 반도체소자의 표면 평탄화방법
KR100539983B1 (ko) * 2003-05-15 2006-01-10 주식회사 케이씨텍 Cmp용 세리아 연마제 및 그 제조 방법
JP4637464B2 (ja) * 2003-07-01 2011-02-23 Jsr株式会社 化学機械研磨用水系分散体
JP4574140B2 (ja) * 2003-08-27 2010-11-04 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いる研磨方法
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
CN1667026B (zh) 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
US20050214191A1 (en) * 2004-03-29 2005-09-29 Mueller Brian L Abrasives and compositions for chemical mechanical planarization of tungsten and titanium
US7364600B2 (en) * 2004-05-11 2008-04-29 K.C. Tech Co., Ltd. Slurry for CMP and method of polishing substrate using same
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US20060032149A1 (en) * 2004-07-28 2006-02-16 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060097219A1 (en) * 2004-11-08 2006-05-11 Applied Materials, Inc. High selectivity slurry compositions for chemical mechanical polishing
US20060156635A1 (en) * 2004-12-16 2006-07-20 K.C. Tech Co., Ltd. Abrasive particles, polishing slurry, and producing method thereof
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP2007103514A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨用組成物及び研磨方法
CN101291778B (zh) 2005-10-19 2012-06-20 日立化成工业株式会社 氧化铈浆料、氧化铈抛光浆料以及使用其抛光衬底的方法
CN101374922B (zh) * 2006-01-25 2013-06-12 Lg化学株式会社 用于抛光半导体晶片的cmp浆料及使用该浆料的方法
US20070210278A1 (en) * 2006-03-08 2007-09-13 Lane Sarah J Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
JP2008130988A (ja) * 2006-11-24 2008-06-05 Fujimi Inc 研磨用組成物及び研磨方法
JP5375025B2 (ja) * 2008-02-27 2013-12-25 日立化成株式会社 研磨液
JP5819036B2 (ja) * 2008-03-25 2015-11-18 三井金属鉱業株式会社 セリウム系研摩材スラリー
JP5104796B2 (ja) * 2009-03-30 2012-12-19 日立化成工業株式会社 研磨剤及びそれを用いた基板の研磨方法
WO2010139603A1 (en) 2009-06-05 2010-12-09 Basf Se RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)
EP2500929A4 (de) * 2009-11-11 2013-08-14 Kuraray Co Schlamm für chemisch-mechanisches polieren und verfahren zum polieren von substraten damit
KR101675378B1 (ko) 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
EP2428541A1 (de) 2010-09-08 2012-03-14 Basf Se Wässrige Polierzusammensetzung und Verfahren zum chemisch-mechanischen Polieren von Substraten mit dielektrischen Siliciumoxid- und Polysiliciumfilmen
JP6196155B2 (ja) 2010-09-08 2017-09-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法
EP2614122A4 (de) 2010-09-08 2014-01-15 Basf Se Wässrige reinigungszusammensetzungen mit n-substituierten diazeniumdioxiden und/oder n'-hydroxy-diazenium-oxidsalzen
EP2649144A4 (de) 2010-12-10 2014-05-14 Basf Se Wässrige polierzusammensetzung und verfahren zum chemisch-mechanischen polieren von substraten mit dielektrischen siliciumoxid- und polysiliciumfilmen
EP2717297B1 (de) 2011-05-24 2016-07-27 Kuraray Co., Ltd. Erosionshemmer für chemisch-mechanisches polieren, aufschlämmung zum chemisch-mechanischen polieren und chemisch-mechanisches polierverfahren
JP2013084836A (ja) * 2011-10-12 2013-05-09 Toshiba Corp Cmp方法及び半導体装置の製造方法
US9777192B2 (en) * 2012-02-10 2017-10-03 Basf Se Chemical mechanical polishing (CMP) composition comprising a protein
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US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
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Also Published As

Publication number Publication date Type
KR20010041248A (ko) 2001-05-15 application
DE69917010T2 (de) 2005-04-07 grant
EP1061111A1 (de) 2000-12-20 application
US6436835B1 (en) 2002-08-20 grant
US6410444B1 (en) 2002-06-25 grant
EP1061111B1 (de) 2004-05-06 grant
JP3672493B2 (ja) 2005-07-20 grant
WO1999043761A1 (en) 1999-09-02 application
US20020045350A1 (en) 2002-04-18 application
KR100583842B1 (ko) 2006-05-26 grant
EP1061111A4 (de) 2001-05-30 application
ES2216490T3 (es) 2004-10-16 grant

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