DE69902422D1 - Verbessertes Ionenstrahl-Sputtering-System - Google Patents
Verbessertes Ionenstrahl-Sputtering-SystemInfo
- Publication number
- DE69902422D1 DE69902422D1 DE69902422T DE69902422T DE69902422D1 DE 69902422 D1 DE69902422 D1 DE 69902422D1 DE 69902422 T DE69902422 T DE 69902422T DE 69902422 T DE69902422 T DE 69902422T DE 69902422 D1 DE69902422 D1 DE 69902422D1
- Authority
- DE
- Germany
- Prior art keywords
- ion beam
- sputtering system
- beam sputtering
- improved ion
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3142—Ion plating
- H01J2237/3146—Ion beam bombardment sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/092,333 US6086727A (en) | 1998-06-05 | 1998-06-05 | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69902422D1 true DE69902422D1 (de) | 2002-09-12 |
DE69902422T2 DE69902422T2 (de) | 2003-05-08 |
Family
ID=22232731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69902422T Expired - Lifetime DE69902422T2 (de) | 1998-06-05 | 1999-05-13 | Verbessertes Ionenstrahl-Sputtering-System |
Country Status (5)
Country | Link |
---|---|
US (2) | US6086727A (de) |
EP (1) | EP0962547B1 (de) |
JP (1) | JP3151445B2 (de) |
KR (1) | KR100333939B1 (de) |
DE (1) | DE69902422T2 (de) |
Families Citing this family (64)
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US6197164B1 (en) * | 1997-10-10 | 2001-03-06 | International Business Machines Corporation | Method and apparatus to improve the uniformity of ion beam deposited films in an ion beam sputtering system |
US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
US6383574B1 (en) * | 1999-07-23 | 2002-05-07 | Headway Technologies, Inc. | Ion implantation method for fabricating magnetoresistive (MR) sensor element |
US6478931B1 (en) | 1999-08-06 | 2002-11-12 | University Of Virginia Patent Foundation | Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom |
US6407435B1 (en) * | 2000-02-11 | 2002-06-18 | Sharp Laboratories Of America, Inc. | Multilayer dielectric stack and method |
US6306266B1 (en) * | 2000-05-17 | 2001-10-23 | International Business Machines Corporation | Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance |
CN1257307C (zh) * | 2000-07-10 | 2006-05-24 | 尤纳克西斯美国公司 | 双扫描薄膜处理系统 |
GB0019848D0 (en) * | 2000-08-11 | 2000-09-27 | Rtc Systems Ltd | Apparatus and method for coating substrates |
US6579625B1 (en) * | 2000-10-24 | 2003-06-17 | Motorola, Inc. | Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers |
US6641674B2 (en) * | 2000-11-10 | 2003-11-04 | Helix Technology Inc. | Movable evaporation device |
US6813121B2 (en) * | 2000-11-30 | 2004-11-02 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic transducer with multilayer conductive leads including a tantalum layer, a chromium layer and a rhodium layer |
US6596399B2 (en) | 2000-12-04 | 2003-07-22 | Guardian Industries Corp. | UV absorbing/reflecting silver oxide layer, and method of making same |
US6610179B2 (en) | 2001-03-16 | 2003-08-26 | David Alan Baldwin | System and method for controlling deposition thickness using a mask with a shadow that varies with respect to a target |
US6488821B2 (en) | 2001-03-16 | 2002-12-03 | 4 Wave Inc. | System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate |
US6716322B1 (en) | 2001-04-19 | 2004-04-06 | Veeco Instruments Inc. | Method and apparatus for controlling film profiles on topographic features |
GB0127251D0 (en) * | 2001-11-13 | 2002-01-02 | Nordiko Ltd | Apparatus |
KR100447323B1 (ko) * | 2002-03-22 | 2004-09-07 | 주식회사 하이닉스반도체 | 반도체 소자의 물리기상 증착 방법 |
US7365408B2 (en) * | 2002-04-30 | 2008-04-29 | International Business Machines Corporation | Structure for photolithographic applications using a multi-layer anti-reflection coating |
US6948231B2 (en) * | 2002-05-21 | 2005-09-27 | International Business Machines Corporation | Method of depositing material into high aspect ratio features |
US20030224620A1 (en) * | 2002-05-31 | 2003-12-04 | Kools Jacques C.S. | Method and apparatus for smoothing surfaces on an atomic scale |
US6878240B2 (en) * | 2002-06-28 | 2005-04-12 | International Business Machines Corporation | Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias layers |
US7016166B1 (en) * | 2002-10-10 | 2006-03-21 | Seagate Technology Llc | Mag-tab design for biasing magnetic sensors |
JP4474109B2 (ja) * | 2003-03-10 | 2010-06-02 | キヤノン株式会社 | スパッタ装置 |
JP2004303309A (ja) * | 2003-03-31 | 2004-10-28 | Hitachi Ltd | 磁気抵抗効果ヘッド及びその製造方法 |
FR2856677B1 (fr) * | 2003-06-27 | 2006-12-01 | Saint Gobain | Substrat revetu d'une couche dielectrique et procede pour sa fabrication |
US6818961B1 (en) * | 2003-06-30 | 2004-11-16 | Freescale Semiconductor, Inc. | Oblique deposition to induce magnetic anisotropy for MRAM cells |
FR2857467B1 (fr) * | 2003-07-09 | 2005-08-19 | Saint Gobain | Dispositif electrocommandable a proprietes optiques et/ou energetiques variables |
US7155810B2 (en) * | 2003-09-30 | 2007-01-02 | Hitachi Global Storage Technologies Netherlands, B.V. | Method for fabricating a magnetic head |
US7270854B2 (en) * | 2003-11-19 | 2007-09-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method for forming a head having improved spin valve properties |
JP2005310757A (ja) * | 2004-03-23 | 2005-11-04 | Sii Nanotechnology Inc | 微細3次元構造物作製装置及び方法 |
KR20070073740A (ko) * | 2004-11-04 | 2007-07-10 | 아사히 가라스 가부시키가이샤 | 이온 빔 스퍼터링 장치 및 euv 리소그래피용 반사형마스크 블랭크의 다층막의 막형성 방법 |
US7667929B2 (en) | 2005-04-04 | 2010-02-23 | Hitachi Global Storage Technologies Netherlands B.V. | Apparatus, method and system for fabricating a patterned media imprint master |
US20060249372A1 (en) * | 2005-04-11 | 2006-11-09 | Intematix Corporation | Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries |
CN100559173C (zh) * | 2005-12-27 | 2009-11-11 | 中芯国际集成电路制造(上海)有限公司 | 集成电路制造中用于俄歇电子能谱的样品的处理方法 |
US8425741B2 (en) | 2006-07-20 | 2013-04-23 | Aviza Technology Limited | Ion deposition apparatus having rotatable carousel for supporting a plurality of targets |
US20080127887A1 (en) * | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Vertically mounted rotary cathodes in sputtering system on elevated rails |
US7997227B2 (en) * | 2007-03-13 | 2011-08-16 | General Electric Company | Vacuum coater device and mechanism for supporting and manipulating workpieces in same |
US20090020415A1 (en) * | 2007-07-16 | 2009-01-22 | Michael Gutkin | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source |
JP4503098B2 (ja) * | 2007-08-29 | 2010-07-14 | キヤノンアネルバ株式会社 | スパッタリングによる成膜方法とその装置 |
JP5036501B2 (ja) * | 2007-11-19 | 2012-09-26 | 小島プレス工業株式会社 | 基材の支持装置及びスパッタリング装置 |
GB0722956D0 (en) * | 2007-11-22 | 2008-01-02 | Barnes Charles F J | Magnetic write head |
JPWO2009154009A1 (ja) * | 2008-06-20 | 2011-11-24 | キヤノンアネルバ株式会社 | 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体 |
WO2009157341A1 (ja) * | 2008-06-25 | 2009-12-30 | キヤノンアネルバ株式会社 | スパッタリング装置及びその制御用プログラムを記録した記録媒体 |
US20120156390A1 (en) * | 2010-12-21 | 2012-06-21 | Hitachi Global Storage Technologies Netherlands B.V. | Multi-angle hard bias deposition for optimal hard-bias deposition in a magnetic sensor |
AT510606B1 (de) * | 2011-02-09 | 2012-05-15 | Leica Mikrosysteme Gmbh | Vorrichtung und verfahren zur probenpräparation |
TW201236809A (en) * | 2011-03-01 | 2012-09-16 | Hon Hai Prec Ind Co Ltd | Coating device |
US10017849B2 (en) * | 2012-11-29 | 2018-07-10 | Corning Incorporated | High rate deposition systems and processes for forming hermetic barrier layers |
US20140227460A1 (en) * | 2013-02-12 | 2014-08-14 | Hariharakeshava Sarpangala Hegde | Methods for addressing inboard-outboard asymmetry in substrate processing |
KR102115476B1 (ko) * | 2013-02-28 | 2020-05-27 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
US20160237555A1 (en) * | 2013-10-24 | 2016-08-18 | Meyer Burger (Germany) Ag | Multi-Magnetron Arrangement |
US20160035539A1 (en) * | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
US10053771B2 (en) * | 2015-10-26 | 2018-08-21 | Tango Systems Inc. | Physical vapor deposition system with target magnets controlled to only be above workpiece |
US9957606B2 (en) * | 2015-10-26 | 2018-05-01 | Tango Systems Inc. | Physical vapor deposition system using rotating pallet with X and Y positioning |
CN106947950B (zh) * | 2017-04-28 | 2023-05-12 | 中山市博顿光电科技有限公司 | 一种利用率高的靶材系统及其使用方法 |
US11450506B2 (en) * | 2020-04-24 | 2022-09-20 | Tel Manufacturing And Engineering Of America, Inc. | Pattern enhancement using a gas cluster ion beam |
CN112159967B (zh) * | 2020-09-30 | 2023-01-31 | 中国电子科技集团公司第四十八研究所 | 一种用于红外金属膜的离子束沉积设备及薄膜沉积方法 |
CA3188407A1 (en) * | 2020-09-30 | 2022-04-07 | Jonathan Boulanger | System and method for controlling film thickness, and film deposition system and method using same |
US11479847B2 (en) * | 2020-10-14 | 2022-10-25 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
KR102579090B1 (ko) * | 2020-12-28 | 2023-09-15 | (주)화인솔루션 | 편광필터 제조용 이온빔 스퍼터링 장치 |
CN112899633B (zh) * | 2021-01-18 | 2022-07-12 | 中国电子科技集团公司第四十八研究所 | 一种离子束镀膜设备及其镀膜方法 |
CN115572950B (zh) * | 2022-10-14 | 2024-07-16 | 苏州岚创科技有限公司 | 多离子源同步溅射镀膜装置 |
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US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
-
1998
- 1998-06-05 US US09/092,333 patent/US6086727A/en not_active Expired - Fee Related
-
1999
- 1999-05-13 EP EP99303750A patent/EP0962547B1/de not_active Expired - Lifetime
- 1999-05-13 DE DE69902422T patent/DE69902422T2/de not_active Expired - Lifetime
- 1999-05-18 KR KR1019990017721A patent/KR100333939B1/ko not_active IP Right Cessation
- 1999-06-01 JP JP15325599A patent/JP3151445B2/ja not_active Expired - Fee Related
-
2000
- 2000-07-10 US US09/612,818 patent/US6238531B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69902422T2 (de) | 2003-05-08 |
KR100333939B1 (ko) | 2002-04-24 |
EP0962547A1 (de) | 1999-12-08 |
JP2000073165A (ja) | 2000-03-07 |
JP3151445B2 (ja) | 2001-04-03 |
US6238531B1 (en) | 2001-05-29 |
KR20000005676A (ko) | 2000-01-25 |
EP0962547B1 (de) | 2002-08-07 |
US6086727A (en) | 2000-07-11 |
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