DE69840443D1 - Impedanzunterstütztes elektrochemisches verfahren und elekrtochemie zum entfernen von material, insbesondere von überflüssigem emitterendem material, in einer elektronenemittierenden vorrichtung - Google Patents

Impedanzunterstütztes elektrochemisches verfahren und elekrtochemie zum entfernen von material, insbesondere von überflüssigem emitterendem material, in einer elektronenemittierenden vorrichtung

Info

Publication number
DE69840443D1
DE69840443D1 DE69840443T DE69840443T DE69840443D1 DE 69840443 D1 DE69840443 D1 DE 69840443D1 DE 69840443 T DE69840443 T DE 69840443T DE 69840443 T DE69840443 T DE 69840443T DE 69840443 D1 DE69840443 D1 DE 69840443D1
Authority
DE
Germany
Prior art keywords
electrocuschemical
emittering
overflowing
impedance
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840443T
Other languages
English (en)
Inventor
N Johan Knall
John D Porter
Christopher J Spindt
Gabriela S Chakarova
Duane A Haven
John C Macaulay
Roger W Barton
Maria S Nikolova
Peter C Searson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/884,700 external-priority patent/US5893967A/en
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from PCT/US1998/012801 external-priority patent/WO1999000537A1/en
Application granted granted Critical
Publication of DE69840443D1 publication Critical patent/DE69840443D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69840443T 1997-06-30 1998-06-29 Impedanzunterstütztes elektrochemisches verfahren und elekrtochemie zum entfernen von material, insbesondere von überflüssigem emitterendem material, in einer elektronenemittierenden vorrichtung Expired - Lifetime DE69840443D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/884,700 US5893967A (en) 1996-03-05 1997-06-30 Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US08/884,701 US6120674A (en) 1997-06-30 1997-06-30 Electrochemical removal of material in electron-emitting device
PCT/US1998/012801 WO1999000537A1 (en) 1997-06-30 1998-06-29 Impedance-assisted electrochemical technique and electrochemistry for removing material, particularly excess emitter material in electron-emitting device

Publications (1)

Publication Number Publication Date
DE69840443D1 true DE69840443D1 (de) 2009-02-26

Family

ID=25385182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840443T Expired - Lifetime DE69840443D1 (de) 1997-06-30 1998-06-29 Impedanzunterstütztes elektrochemisches verfahren und elekrtochemie zum entfernen von material, insbesondere von überflüssigem emitterendem material, in einer elektronenemittierenden vorrichtung

Country Status (2)

Country Link
US (1) US6120674A (de)
DE (1) DE69840443D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500885B1 (en) 1997-02-28 2002-12-31 Candescent Technologies Corporation Polycarbonate-containing liquid chemical formulation and methods for making and using polycarbonate film
US7148148B2 (en) * 2001-12-06 2006-12-12 Seiko Epson Corporation Mask forming and removing method, and semiconductor device, an electric circuit, a display module, a color filter and an emissive device manufactured by the same method
JP4175298B2 (ja) * 2004-07-07 2008-11-05 セイコーエプソン株式会社 カラーフィルタとその製造方法及び電気光学装置並びに電子機器
TWI437615B (zh) * 2011-06-07 2014-05-11 Au Optronics Corp 場發射顯示元件之製作方法及應用於製作場發射顯示元件之電化學系統

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US2334699A (en) * 1938-11-23 1943-11-23 Battelle Memorial Institute Electrolyte for the polishing of metal surfaces and method of use
US2928777A (en) * 1950-12-16 1960-03-15 Electro Process Inc Electrolytic polishing of metals
US3174920A (en) * 1961-06-09 1965-03-23 Post Daniel Method for producing electrical resistance strain gages by electropolishing
US3407125A (en) * 1965-01-18 1968-10-22 Corning Glass Works Method of making filamentary metal structures
US3483108A (en) * 1967-05-29 1969-12-09 Gen Electric Method of chemically etching a non-conductive material using an electrolytically controlled mask
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
JPS5325632B2 (de) * 1973-03-22 1978-07-27
US3841931A (en) * 1973-07-23 1974-10-15 Bell Telephone Labor Inc Mild acid etch for tungsten
JPS5436828B2 (de) * 1974-08-16 1979-11-12
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US4629539A (en) * 1982-07-08 1986-12-16 Tdk Corporation Metal layer patterning method
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
JPH0817192B2 (ja) * 1988-05-30 1996-02-21 株式会社日立製作所 半導体ｌｓｉ検査装置用プローブヘッドの製造方法
EP0364964B1 (de) * 1988-10-17 1996-03-27 Matsushita Electric Industrial Co., Ltd. Feldemissions-Kathoden
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US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
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US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
US5217586A (en) * 1992-01-09 1993-06-08 International Business Machines Corporation Electrochemical tool for uniform metal removal during electropolishing
US5477105A (en) * 1992-04-10 1995-12-19 Silicon Video Corporation Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes
US5424605A (en) * 1992-04-10 1995-06-13 Silicon Video Corporation Self supporting flat video display
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
FR2723799B1 (fr) * 1994-08-16 1996-09-20 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes
GB9416754D0 (en) * 1994-08-18 1994-10-12 Isis Innovation Field emitter structures
FR2726122B1 (fr) * 1994-10-19 1996-11-22 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching
US5863233A (en) * 1996-03-05 1999-01-26 Candescent Technologies Corporation Field emitter fabrication using open circuit electrochemical lift off
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device

Also Published As

Publication number Publication date
US6120674A (en) 2000-09-19

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