DE69826551D1 - Vertikaler Feldeffekttransistor mit isolierter Steuerelektrode, Verfahren zu dessen Herstellung und entsprechende integrierte Schaltung - Google Patents

Vertikaler Feldeffekttransistor mit isolierter Steuerelektrode, Verfahren zu dessen Herstellung und entsprechende integrierte Schaltung

Info

Publication number
DE69826551D1
DE69826551D1 DE69826551T DE69826551T DE69826551D1 DE 69826551 D1 DE69826551 D1 DE 69826551D1 DE 69826551 T DE69826551 T DE 69826551T DE 69826551 T DE69826551 T DE 69826551T DE 69826551 D1 DE69826551 D1 DE 69826551D1
Authority
DE
Germany
Prior art keywords
production
integrated circuit
field effect
effect transistor
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69826551T
Other languages
English (en)
Other versions
DE69826551T2 (de
Inventor
Toshihiko Degawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69826551D1 publication Critical patent/DE69826551D1/de
Application granted granted Critical
Publication of DE69826551T2 publication Critical patent/DE69826551T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
DE69826551T 1997-04-14 1998-04-08 Vertikaler Feldeffekttransistor mit isolierter Steuerelektrode, Verfahren zu dessen Herstellung und entsprechende integrierte Schaltung Expired - Lifetime DE69826551T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9616397 1997-04-14
JP9096163A JPH10290007A (ja) 1997-04-14 1997-04-14 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69826551D1 true DE69826551D1 (de) 2004-11-04
DE69826551T2 DE69826551T2 (de) 2005-10-06

Family

ID=14157680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826551T Expired - Lifetime DE69826551T2 (de) 1997-04-14 1998-04-08 Vertikaler Feldeffekttransistor mit isolierter Steuerelektrode, Verfahren zu dessen Herstellung und entsprechende integrierte Schaltung

Country Status (6)

Country Link
US (1) US6215150B1 (de)
EP (1) EP0872895B1 (de)
JP (1) JPH10290007A (de)
KR (1) KR100288028B1 (de)
DE (1) DE69826551T2 (de)
TW (1) TW400649B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE312895T1 (de) * 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
GB2362755A (en) 2000-05-25 2001-11-28 Nanogate Ltd Thin film field effect transistor with a conical structure
DE10231966A1 (de) 2002-07-15 2004-02-12 Infineon Technologies Ag Feldeffekttransistor, zugehörige Verwendung und zugehöriges Herstellungsverfahren
KR100861213B1 (ko) * 2007-04-17 2008-09-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP4746600B2 (ja) 2007-11-01 2011-08-10 シャープ株式会社 縦型ｍｏｓｆｅｔの製造方法
US9520494B2 (en) 2013-09-26 2016-12-13 Intel Corporation Vertical non-planar semiconductor device for system-on-chip (SoC) applications
JP7495257B2 (ja) * 2020-03-24 2024-06-04 株式会社東海理化電機製作所 半導体集積回路、および半導体集積回路の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128654A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
US5016067A (en) * 1988-04-11 1991-05-14 Texas Instruments Incorporated Vertical MOS transistor
JPH01268172A (ja) 1988-04-20 1989-10-25 Fujitsu Ltd 半導体装置
JPH03253079A (ja) 1990-03-02 1991-11-12 Hitachi Ltd Ｍｏｓ型半導体装置
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
JP2850527B2 (ja) * 1990-11-20 1999-01-27 株式会社デンソー 半導体装置およびその製造方法
US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
JPH0541521A (ja) 1991-08-05 1993-02-19 Fujitsu Ltd 半導体装置及びその製造方法
US5640034A (en) * 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
US5455190A (en) * 1994-12-07 1995-10-03 United Microelectronics Corporation Method of making a vertical channel device using buried source techniques
JP3303601B2 (ja) * 1995-05-19 2002-07-22 日産自動車株式会社 溝型半導体装置

Also Published As

Publication number Publication date
JPH10290007A (ja) 1998-10-27
KR100288028B1 (ko) 2001-05-02
US6215150B1 (en) 2001-04-10
EP0872895A3 (de) 1999-02-24
KR19980080900A (ko) 1998-11-25
EP0872895A2 (de) 1998-10-21
EP0872895B1 (de) 2004-09-29
DE69826551T2 (de) 2005-10-06
TW400649B (en) 2000-08-01

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Legal Events

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