DE69812828D1 - Ionenstrahl-Sputtering-System - Google Patents

Ionenstrahl-Sputtering-System

Info

Publication number
DE69812828D1
DE69812828D1 DE69812828T DE69812828T DE69812828D1 DE 69812828 D1 DE69812828 D1 DE 69812828D1 DE 69812828 T DE69812828 T DE 69812828T DE 69812828 T DE69812828 T DE 69812828T DE 69812828 D1 DE69812828 D1 DE 69812828D1
Authority
DE
Germany
Prior art keywords
ion beam
sputtering system
beam sputtering
ion
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69812828T
Other languages
English (en)
Other versions
DE69812828T2 (de
Inventor
Mustafa Pinarbasi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69812828D1 publication Critical patent/DE69812828D1/de
Application granted granted Critical
Publication of DE69812828T2 publication Critical patent/DE69812828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
DE69812828T 1997-10-10 1998-09-14 Ionenstrahl-Sputtering-System Expired - Fee Related DE69812828T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/949,064 US6197164B1 (en) 1997-10-10 1997-10-10 Method and apparatus to improve the uniformity of ion beam deposited films in an ion beam sputtering system
US949064 1997-10-10

Publications (2)

Publication Number Publication Date
DE69812828D1 true DE69812828D1 (de) 2003-05-08
DE69812828T2 DE69812828T2 (de) 2004-02-05

Family

ID=25488550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69812828T Expired - Fee Related DE69812828T2 (de) 1997-10-10 1998-09-14 Ionenstrahl-Sputtering-System

Country Status (3)

Country Link
US (1) US6197164B1 (de)
EP (1) EP0908532B1 (de)
DE (1) DE69812828T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7062348B1 (en) * 2000-07-13 2006-06-13 The Extreme Ultaviolet Lithography Llc Dynamic mask for producing uniform or graded-thickness thin films
US6447653B1 (en) * 2000-10-11 2002-09-10 Litton Systems Inc. Method of shaping a flux mask and process of sputtering with the shaped flux mask
US6419802B1 (en) * 2001-03-16 2002-07-16 David Alan Baldwin System and method for controlling deposition thickness by synchronously varying a sputtering rate of a target with respect to a position of a rotating substrate
US6716322B1 (en) 2001-04-19 2004-04-06 Veeco Instruments Inc. Method and apparatus for controlling film profiles on topographic features
US6636400B2 (en) 2001-09-18 2003-10-21 International Business Machines Corporation Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer
US6732421B2 (en) * 2002-03-22 2004-05-11 Seagate Technology Llc Method for producing magnetoresistive heads ion bombardment etch to stripe height
US7198699B2 (en) * 2002-05-06 2007-04-03 Guardian Industries Corp. Sputter coating apparatus including ion beam source(s), and corresponding method
US20040045671A1 (en) * 2002-09-10 2004-03-11 Ed Rejda Selective etching device
DE102006024068A1 (de) * 2006-05-23 2007-11-29 Oerlikon Leybold Vacuum Gmbh Beschichtungsanlage
US8308921B1 (en) 2006-12-21 2012-11-13 Western Digital (Fremont), Llc Mask for increased uniformity in ion beam deposition
US7863587B2 (en) * 2007-01-31 2011-01-04 Hitachi Global Storage Technologies, Netherlands, B.V. Symmetrical shaper for an ion beam deposition and etching apparatus
US8561333B2 (en) * 2009-01-21 2013-10-22 Roxanna Meyers Snap N place sign system and method of use for interior signs
US20150203955A1 (en) * 2013-11-07 2015-07-23 Carnegie Mellon University, A Pennsylvania Non-Profit Corporation Apparatus and method for making composition spread alloy films
FR3127761A1 (fr) * 2021-10-05 2023-04-07 Safran Electronics & Defense Module de contrôle des gradients de caractéristiques physiques d’un dépôt de couche mince par un ensemble de caches automatisés

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303489A (en) * 1978-08-21 1981-12-01 Vac-Tec Systems, Inc. Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate
US4315960A (en) * 1980-05-28 1982-02-16 Matsushita Electric Industrial Co., Ltd. Method of making a thin film
JPS61124568A (ja) 1984-11-16 1986-06-12 Matsushita Electric Ind Co Ltd イオンビ−ムスパツタ装置
US4793908A (en) 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
JPH0297673A (ja) 1988-09-30 1990-04-10 Hitachi Koki Co Ltd イオンビームスパッタ法
US4923585A (en) 1988-11-02 1990-05-08 Arch Development Corporation Sputter deposition for multi-component thin films
JPH02251143A (ja) * 1989-03-24 1990-10-08 Sumitomo Electric Ind Ltd イオンビーム式スパッタリング装置
JPH03202466A (ja) * 1989-12-28 1991-09-04 Fujitsu Ltd スパッタリング装置
WO1992016014A2 (en) * 1991-03-07 1992-09-17 Honeywell Inc. Method and apparatus for concave substrates
JPH04308083A (ja) * 1991-04-06 1992-10-30 Japan Steel Works Ltd:The 薄膜の作成方法
US5492605A (en) * 1992-08-24 1996-02-20 International Business Machines Corporation Ion beam induced sputtered multilayered magnetic structures
EP0600303B1 (de) 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer elektrischen Dünnschicht
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system

Also Published As

Publication number Publication date
EP0908532A2 (de) 1999-04-14
US6197164B1 (en) 2001-03-06
EP0908532A3 (de) 1999-11-17
EP0908532B1 (de) 2003-04-02
DE69812828T2 (de) 2004-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee