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Schleifmittel

Info

Publication number
DE69712637D1
DE69712637D1 DE1997612637 DE69712637A DE69712637D1 DE 69712637 D1 DE69712637 D1 DE 69712637D1 DE 1997612637 DE1997612637 DE 1997612637 DE 69712637 A DE69712637 A DE 69712637A DE 69712637 D1 DE69712637 D1 DE 69712637D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1997612637
Other languages
English (en)
Other versions
DE69712637T2 (de )
Inventor
Toshio Kasai
Isao Ota
Takao Kaga
Tohru Nishimura
Kenji Tanimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Industries Ltd
Original Assignee
Nissan Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of the rare earth metals, i.e. scandium, yttrium, lanthanum, or the group of the lanthanides
    • C01F17/0043Oxides or hydroxides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
DE1997612637 1996-07-30 1997-07-30 Schleifmittel Expired - Fee Related DE69712637D1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20005696 1996-07-30
JP20345096 1996-08-01

Publications (1)

Publication Number Publication Date
DE69712637D1 true DE69712637D1 (de) 2002-06-20

Family

ID=26511940

Family Applications (4)

Application Number Title Priority Date Filing Date
DE1997612637 Expired - Lifetime DE69712637T2 (de) 1996-07-30 1997-07-30 Schleifmittel
DE1997603957 Expired - Lifetime DE69703957D1 (de) 1996-07-30 1997-07-30 Verfahren zur Herstellung von kristallinen Ceroxidteilchen.
DE1997603957 Expired - Lifetime DE69703957T2 (de) 1996-07-30 1997-07-30 Verfahren zur Herstellung von kristallinen Ceroxidteilchen.
DE1997612637 Expired - Fee Related DE69712637D1 (de) 1996-07-30 1997-07-30 Schleifmittel

Family Applications Before (3)

Application Number Title Priority Date Filing Date
DE1997612637 Expired - Lifetime DE69712637T2 (de) 1996-07-30 1997-07-30 Schleifmittel
DE1997603957 Expired - Lifetime DE69703957D1 (de) 1996-07-30 1997-07-30 Verfahren zur Herstellung von kristallinen Ceroxidteilchen.
DE1997603957 Expired - Lifetime DE69703957T2 (de) 1996-07-30 1997-07-30 Verfahren zur Herstellung von kristallinen Ceroxidteilchen.

Country Status (3)

Country Link
US (2) US5962343A (de)
DE (4) DE69712637T2 (de)
EP (2) EP0947469B1 (de)

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JP3960914B2 (ja) * 2000-10-02 2007-08-15 三井金属鉱業株式会社 セリウム系研摩材及びセリウム系研摩材の製造方法
US7887714B2 (en) 2000-12-25 2011-02-15 Nissan Chemical Industries, Ltd. Cerium oxide sol and abrasive
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KR100444307B1 (ko) * 2001-12-28 2004-08-16 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
KR100477939B1 (ko) * 2002-04-15 2005-03-18 주식회사 엘지화학 단결정 산화세륨 분말의 제조방법
US7025943B2 (en) * 2002-05-15 2006-04-11 The Curators Of The University Of Missouri Method for preparation of nanometer cerium-based oxide particles
US6729935B2 (en) * 2002-06-13 2004-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for in-situ monitoring of mixing ratio of high selectivity slurry
CN100370587C (zh) * 2002-09-06 2008-02-20 旭硝子株式会社;清美化学股份有限公司 绝缘膜研磨剂组合物及半导体集成电路的制造方法
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
KR100511943B1 (ko) * 2003-05-22 2005-09-01 한화석유화학 주식회사 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법
KR100698396B1 (ko) * 2003-05-28 2007-03-23 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
FR2872716B1 (fr) * 2004-07-06 2006-11-03 Altreg Sarl Produit de stockage reversible de dihydrogene, procede de fabrication d'un tel produit, et utilisation d'un tel produit pour le stockage reversible de dihydrogene
KR101205231B1 (ko) * 2004-08-17 2012-11-28 닛산 가가쿠 고교 가부시키 가이샤 금속산화물 졸의 제조방법
EP1818312A4 (de) * 2004-11-08 2010-09-08 Asahi Glass Co Ltd Verfahren zur herstellung von feinen ceo2-teilchen und poliersuspension, die derartige feine teilchen enthält
KR101134590B1 (ko) * 2005-03-28 2012-04-09 삼성코닝정밀소재 주식회사 분산 안정성이 우수한 연마 슬러리의 제조방법
KR100812052B1 (ko) * 2005-11-14 2008-03-10 주식회사 엘지화학 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리
FR2906800B1 (fr) 2006-10-09 2008-11-28 Rhodia Recherches & Tech Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage
CN101679747B (zh) * 2006-12-28 2012-10-10 道康宁东丽株式会社 热固性硅橡胶组合物
US8066874B2 (en) 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
US8252087B2 (en) 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
EP2687373A1 (de) * 2007-11-16 2014-01-22 Välinge Photocatalytic AB Impregnierungsflüssigkeit und Verfahren zur Herstellung von photokatalytisch aktiven Platten oder Paneelen unter Verwendung dieser Flüssigkeit
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Also Published As

Publication number Publication date Type
EP0947469B1 (de) 2002-05-15 grant
EP0822164B1 (de) 2001-01-24 grant
EP0822164A2 (de) 1998-02-04 application
US5962343A (en) 1999-10-05 grant
DE69703957T2 (de) 2001-08-30 grant
US6372003B1 (en) 2002-04-16 grant
EP0822164A3 (de) 1998-08-26 application
EP0947469A3 (de) 2000-01-12 application
DE69703957D1 (de) 2001-03-01 grant
EP0947469A2 (de) 1999-10-06 application
DE69712637T2 (de) 2003-01-30 grant

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