DE69625417T2 - Lateraler IGBT - Google Patents

Lateraler IGBT

Info

Publication number
DE69625417T2
DE69625417T2 DE1996625417 DE69625417T DE69625417T2 DE 69625417 T2 DE69625417 T2 DE 69625417T2 DE 1996625417 DE1996625417 DE 1996625417 DE 69625417 T DE69625417 T DE 69625417T DE 69625417 T2 DE69625417 T2 DE 69625417T2
Authority
DE
Grant status
Grant
Patent type
Prior art keywords
lateral igbt
igbt
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1996625417
Other languages
English (en)
Other versions
DE69625417D1 (de )
Inventor
Akio Nakagawa
Tomoko Matsudai
Hideyuki Funaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7394Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7398Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
DE1996625417 1995-08-24 1996-08-23 Lateraler IGBT Expired - Lifetime DE69625417T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21635095 1995-08-24

Publications (1)

Publication Number Publication Date
DE69625417T2 true DE69625417T2 (de) 2003-10-30

Family

ID=16687182

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1996625417 Expired - Lifetime DE69625417T2 (de) 1995-08-24 1996-08-23 Lateraler IGBT
DE1996625417 Expired - Lifetime DE69625417D1 (de) 1995-08-24 1996-08-23 Lateraler IGBT

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1996625417 Expired - Lifetime DE69625417D1 (de) 1995-08-24 1996-08-23 Lateraler IGBT

Country Status (3)

Country Link
US (2) US5731603A (de)
EP (1) EP0760529B1 (de)
DE (2) DE69625417T2 (de)

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US7829955B2 (en) 2005-12-21 2010-11-09 Mitsubishi Electric Corporation Semiconductor device

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US6133607A (en) * 1997-05-22 2000-10-17 Kabushiki Kaisha Toshiba Semiconductor device
DE19725091B4 (de) * 1997-06-13 2004-09-02 Robert Bosch Gmbh Laterales Transistorbauelement und Verfahren zu seiner Herstellung
JP3147048B2 (ja) * 1997-09-12 2001-03-19 日本電気株式会社 半導体装置
DE19820956A1 (de) * 1998-05-11 1999-11-18 Daimler Chrysler Ag Halbleiter-Bauelement und Verfahren zu seiner Herstellung sowie Verwendung des Halbleiter-Bauelements
DE19828669C2 (de) * 1998-06-26 2003-08-21 Infineon Technologies Ag Lateraler IGBT in SOI-Bauweise und Verfahren zur Herstellung
DE19836233B4 (de) * 1998-08-05 2008-10-30 X-Fab Semiconductor Foundries Ag Lateraler DMOS-Transistor auf isolierender Unterlage und Verfahren zu seiner Herstellung
JP2002543626A (ja) * 1999-05-03 2002-12-17 − ハカン エクルンド、クラス 半導体要素
KR100777243B1 (ko) * 1999-09-21 2007-11-19 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 그 제조방법
JP4357127B2 (ja) 2000-03-03 2009-11-04 株式会社東芝 半導体装置
KR20040058255A (ko) * 2001-11-01 2004-07-03 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 횡형 절연 게이트 바이폴라 트랜지스터 디바이스
DE602004023497D1 (de) 2003-05-06 2009-11-19 Enecsys Ltd Stromversorgungsschaltungen
US8067855B2 (en) * 2003-05-06 2011-11-29 Enecsys Limited Power supply circuits
US7329566B2 (en) 2005-05-31 2008-02-12 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7244989B2 (en) * 2005-06-02 2007-07-17 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP4257346B2 (ja) * 2006-06-27 2009-04-22 株式会社東芝 電力増幅器
US8473250B2 (en) 2006-12-06 2013-06-25 Solaredge, Ltd. Monitoring of distributed power harvesting systems using DC power sources
US8319471B2 (en) 2006-12-06 2012-11-27 Solaredge, Ltd. Battery power delivery module
US8013472B2 (en) 2006-12-06 2011-09-06 Solaredge, Ltd. Method for distributed power harvesting using DC power sources
US8963369B2 (en) 2007-12-04 2015-02-24 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US8816535B2 (en) 2007-10-10 2014-08-26 Solaredge Technologies, Ltd. System and method for protection during inverter shutdown in distributed power installations
US8618692B2 (en) 2007-12-04 2013-12-31 Solaredge Technologies Ltd. Distributed power system using direct current power sources
US8384243B2 (en) 2007-12-04 2013-02-26 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US9130401B2 (en) 2006-12-06 2015-09-08 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US9112379B2 (en) 2006-12-06 2015-08-18 Solaredge Technologies Ltd. Pairing of components in a direct current distributed power generation system
JP4458112B2 (ja) * 2007-04-18 2010-04-28 株式会社日立製作所 半導体装置の製造方法、それを用いた半導体装置及びプラズマパネルディスプレイ
US8319483B2 (en) 2007-08-06 2012-11-27 Solaredge Technologies Ltd. Digital average input current control in power converter
EP2232690B1 (de) 2007-12-05 2016-08-31 Solaredge Technologies Ltd. Parallel geschaltete umrichter
CN101933209B (zh) 2007-12-05 2015-10-21 太阳能安吉有限公司 分布式电力装置中的安全机构、醒来和关闭方法
US8049523B2 (en) 2007-12-05 2011-11-01 Solaredge Technologies Ltd. Current sensing on a MOSFET
WO2009072075A9 (en) 2007-12-05 2009-12-30 Solaredge Technologies Ltd. Photovoltaic system power tracking method
US20160373006A9 (en) 2008-03-24 2016-12-22 Meir Adest Testing of a Photovoltaic Panel
US7960950B2 (en) 2008-03-24 2011-06-14 Solaredge Technologies Ltd. Zero current switching
JP2009260119A (ja) * 2008-04-18 2009-11-05 Panasonic Corp 半導体装置、及び該半導体装置を用いたエネルギー伝達装置
EP3121922A1 (de) 2008-05-05 2017-01-25 Solaredge Technologies Ltd. Gleichstromleistungskombinierer
US8354710B2 (en) 2008-08-08 2013-01-15 Infineon Technologies Ag Field-effect device and manufacturing method thereof
US8947194B2 (en) 2009-05-26 2015-02-03 Solaredge Technologies Ltd. Theft detection and prevention in a power generation system
JP2011181709A (ja) * 2010-03-02 2011-09-15 Hitachi Ltd 半導体装置およびその製造方法
JP5636848B2 (ja) 2010-05-26 2014-12-10 株式会社デンソー 横型の絶縁ゲート型バイポーラトランジスタ
GB2485527B (en) 2010-11-09 2012-12-19 Solaredge Technologies Ltd Arc detection and prevention in a power generation system
GB201020862D0 (en) 2010-12-09 2011-01-26 Solaredge Technologies Ltd Disconnection of a string carrying direct current power
GB2483317B (en) 2011-01-12 2012-08-22 Solaredge Technologies Ltd Serially connected inverters
JP5902949B2 (ja) * 2012-01-05 2016-04-13 株式会社 日立パワーデバイス 半導体装置
US9853565B2 (en) 2012-01-30 2017-12-26 Solaredge Technologies Ltd. Maximized power in a photovoltaic distributed power system
GB201201506D0 (en) 2012-01-30 2012-03-14 Solaredge Technologies Ltd Photovoltaic panel circuitry
GB201201499D0 (en) 2012-01-30 2012-03-14 Solaredge Technologies Ltd Maximizing power in a photovoltaic distributed power system
GB201203763D0 (en) 2012-03-05 2012-04-18 Solaredge Technologies Ltd Direct current link circuit
US8735937B2 (en) 2012-05-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fully isolated LIGBT and methods for forming the same
CN102956636B (zh) * 2012-09-14 2015-02-04 东南大学 一种大电流n型绝缘体上硅横向绝缘栅双极型晶体管
CN102903746B (zh) * 2012-11-07 2015-06-03 东南大学 一种大电流密度的横向超薄绝缘栅双极型晶体管
US9941813B2 (en) 2013-03-14 2018-04-10 Solaredge Technologies Ltd. High frequency multi-level inverter
US9548619B2 (en) 2013-03-14 2017-01-17 Solaredge Technologies Ltd. Method and apparatus for storing and depleting energy
EP2779251A1 (de) 2013-03-15 2014-09-17 Solaredge Technologies Ltd. Umgehungsmechanismus
CN104347691B (zh) * 2013-07-24 2017-05-24 旺宏电子股份有限公司 半导体装置及其操作方法
CN104737293B (zh) * 2013-12-23 2017-05-03 伍震威 用于功率半导体装置的场板结构及其制造方法
US9318974B2 (en) 2014-03-26 2016-04-19 Solaredge Technologies Ltd. Multi-level inverter with flying capacitor topology

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Publication number Priority date Publication date Assignee Title
US7829955B2 (en) 2005-12-21 2010-11-09 Mitsubishi Electric Corporation Semiconductor device
US8421157B2 (en) 2005-12-21 2013-04-16 Mitsubishi Electric Corporation Semiconductor device
DE102006058228B4 (de) * 2005-12-21 2013-11-28 Mitsubishi Electric Corp. Halbleitervorrichtung

Also Published As

Publication number Publication date Type
US5731603A (en) 1998-03-24 grant
DE69625417D1 (de) 2003-01-30 grant
EP0760529A2 (de) 1997-03-05 application
US5920087A (en) 1999-07-06 grant
EP0760529A3 (de) 1997-10-15 application
EP0760529B1 (de) 2002-12-18 grant

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