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Vielchip pre-kontaktierter Halbleiter

Info

Publication number
DE69614195T2
DE69614195T2 DE1996614195 DE69614195T DE69614195T2 DE 69614195 T2 DE69614195 T2 DE 69614195T2 DE 1996614195 DE1996614195 DE 1996614195 DE 69614195 T DE69614195 T DE 69614195T DE 69614195 T2 DE69614195 T2 DE 69614195T2
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1996614195
Other languages
English (en)
Other versions
DE69614195D1 (de )
Inventor
Satoshi Teramae
Michiaki Hiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date
Family has litigation

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12035Zener diode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
DE1996614195 1995-05-31 1996-05-31 Vielchip pre-kontaktierter Halbleiter Expired - Lifetime DE69614195T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13445195A JP3258200B2 (ja) 1995-05-31 1995-05-31 圧接型半導体装置

Publications (1)

Publication Number Publication Date
DE69614195T2 true DE69614195T2 (de) 2002-04-18

Family

ID=15128656

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1996614195 Expired - Lifetime DE69614195T2 (de) 1995-05-31 1996-05-31 Vielchip pre-kontaktierter Halbleiter
DE1996614195 Expired - Lifetime DE69614195D1 (de) 1995-05-31 1996-05-31 Vielchip pre-kontaktierter Halbleiter

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1996614195 Expired - Lifetime DE69614195D1 (de) 1995-05-31 1996-05-31 Vielchip pre-kontaktierter Halbleiter

Country Status (5)

Country Link
US (1) US5708299A (de)
JP (1) JP3258200B2 (de)
KR (1) KR100203533B1 (de)
DE (2) DE69614195T2 (de)
EP (1) EP0746023B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449774B1 (en) 1999-10-01 2008-11-11 Fairchild Korea Semiconductor Ltd. Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1014451A4 (de) * 1997-03-26 2000-11-15 Hitachi Ltd Flache halbleiteranordnung und stromrichter mit derselben
JP3480811B2 (ja) 1997-07-15 2003-12-22 株式会社東芝 電圧駆動型電力用半導体装置
JP3344552B2 (ja) * 1997-09-17 2002-11-11 株式会社東芝 圧接型半導体装置
US6020636A (en) * 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
GB9725960D0 (en) 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips
JP2930074B1 (ja) * 1998-06-02 1999-08-03 富士電機株式会社 半導体装置
JP2000091485A (ja) 1998-07-14 2000-03-31 Denso Corp 半導体装置
US6072240A (en) 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
JP4085536B2 (ja) * 1998-11-09 2008-05-14 株式会社デンソー 電気機器およびその製造方法並びに圧接型半導体装置
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP3676240B2 (ja) 2000-02-07 2005-07-27 株式会社東芝 圧接型半導体装置
GB0015484D0 (en) * 2000-06-23 2000-08-16 Westcode Semiconductors Limite Housing semiconductor chips
EP1168446A3 (de) 2000-06-23 2008-01-23 Westcode Semiconductors Limited Gehäuse von Halbleiterchips
DE10048436A1 (de) * 2000-09-29 2002-04-18 Siemens Ag Elektronische Leistungsschaltervorrichtung
JP3954314B2 (ja) * 2001-01-23 2007-08-08 株式会社東芝 圧接型半導体装置
JP4479121B2 (ja) * 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法
JP2004023083A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 圧接型半導体装置
US6678163B1 (en) 2002-12-19 2004-01-13 Westcode Semiconductors Limited Housing for semiconductor chips
JP4157001B2 (ja) * 2003-08-28 2008-09-24 株式会社東芝 マルチチップ圧接型半導体装置
JP4802210B2 (ja) * 2008-05-13 2011-10-26 株式会社東芝 マルチチップ圧接型半導体装置
US8531027B2 (en) * 2010-04-30 2013-09-10 General Electric Company Press-pack module with power overlay interconnection
CN104183556A (zh) * 2013-05-23 2014-12-03 国家电网公司 一种全压接式绝缘栅双极晶体管器件
US9177943B2 (en) * 2013-10-15 2015-11-03 Ixys Corporation Power device cassette with auxiliary emitter contact
DE102014104718B3 (de) * 2014-04-03 2015-08-20 Infineon Technologies Ag Halbleiterbaugruppe mit Chiparrays

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081914B2 (ja) * 1987-03-31 1996-01-10 株式会社東芝 圧接型半導体装置
JPH0693468B2 (ja) * 1988-08-09 1994-11-16 株式会社東芝 圧接平型半導体装置
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置
JP2755761B2 (ja) * 1990-01-26 1998-05-25 株式会社東芝 半導体装置
JP3137375B2 (ja) * 1990-09-20 2001-02-19 株式会社東芝 圧接型半導体装置
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
EP0499707B1 (de) * 1991-02-22 1996-04-03 Asea Brown Boveri Ag Abschaltbares Hochleistungs-Halbleiterbauelement
EP0514615B1 (de) * 1991-05-23 1995-05-03 ANSALDO TRASPORTI S.p.A. Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
JP2991010B2 (ja) * 1993-09-29 1999-12-20 富士電機株式会社 半導体装置およびその製造方法
JP2845739B2 (ja) * 1993-11-29 1999-01-13 三菱電機株式会社 圧接型半導体装置及びその製造方法
JP3256636B2 (ja) * 1994-09-15 2002-02-12 株式会社東芝 圧接型半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449774B1 (en) 1999-10-01 2008-11-11 Fairchild Korea Semiconductor Ltd. Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same
US7501700B2 (en) 1999-10-01 2009-03-10 Fairchild Korea Semiconductor Ltd. Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same
DE10048377B4 (de) * 1999-10-01 2010-11-11 Fairchild Korea Semiconductor Ltd., Bucheon Halbleiter-Leistungsmodul mit elektrisch isolierender Wärmesenke und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date Type
DE69614195D1 (de) 2001-09-06 grant
JP3258200B2 (ja) 2002-02-18 grant
KR100203533B1 (ko) 1999-07-01 grant
US5708299A (en) 1998-01-13 grant
EP0746023A3 (de) 1997-10-29 application
EP0746023B1 (de) 2001-08-01 grant
JPH08330338A (ja) 1996-12-13 application
EP0746023A2 (de) 1996-12-04 application

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