DE69604940D1 - Strahlenhärtbare Zusammensetzungen - Google Patents
Strahlenhärtbare ZusammensetzungenInfo
- Publication number
- DE69604940D1 DE69604940D1 DE69604940T DE69604940T DE69604940D1 DE 69604940 D1 DE69604940 D1 DE 69604940D1 DE 69604940 T DE69604940 T DE 69604940T DE 69604940 T DE69604940 T DE 69604940T DE 69604940 D1 DE69604940 D1 DE 69604940D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation curable
- curable compositions
- compositions
- radiation
- curable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/205—Compounds containing groups, e.g. carbamates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01619395A JP3499032B2 (ja) | 1995-02-02 | 1995-02-02 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69604940D1 true DE69604940D1 (de) | 1999-12-09 |
DE69604940T2 DE69604940T2 (de) | 2000-06-15 |
Family
ID=11909683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69604940T Expired - Lifetime DE69604940T2 (de) | 1995-02-02 | 1996-01-31 | Strahlenhärtbare Zusammensetzungen |
Country Status (6)
Country | Link |
---|---|
US (2) | US5789460A (de) |
EP (1) | EP0725106B1 (de) |
JP (1) | JP3499032B2 (de) |
KR (1) | KR100362619B1 (de) |
DE (1) | DE69604940T2 (de) |
TW (1) | TW397937B (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3628098B2 (ja) * | 1996-03-29 | 2005-03-09 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法 |
US5861235A (en) * | 1996-06-26 | 1999-01-19 | Dow Corning Asia, Ltd. | Ultraviolet-curable composition and method for patterning the cured product therefrom |
US6087024A (en) * | 1996-12-17 | 2000-07-11 | Whinnery; Leroy Louis | Method for forming porous sintered bodies with controlled pore structure |
US6407146B1 (en) * | 1997-07-28 | 2002-06-18 | Kaneka Corporation | Curable composition |
CN1137938C (zh) * | 1997-07-28 | 2004-02-11 | 钟渊化学工业株式会社 | 可固化的粘合剂组合物 |
US6177360B1 (en) * | 1997-11-06 | 2001-01-23 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
GB9812425D0 (en) | 1998-06-10 | 1998-08-05 | Dow Corning | Electroless metal disposition on silyl hyride functional resin |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6127086A (en) * | 1998-10-01 | 2000-10-03 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
US6214516B1 (en) * | 1998-10-01 | 2001-04-10 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
US6177143B1 (en) * | 1999-01-06 | 2001-01-23 | Allied Signal Inc | Electron beam treatment of siloxane resins |
US7175903B1 (en) | 2000-11-17 | 2007-02-13 | Pliant Corporation | Heat sealable polyvinyl chloride films |
US20030096090A1 (en) * | 2001-10-22 | 2003-05-22 | Boisvert Ronald Paul | Etch-stop resins |
TWI273352B (en) * | 2002-01-24 | 2007-02-11 | Jsr Corp | Radiation sensitive composition for forming an insulating film, insulating film and display device |
JP2004165613A (ja) * | 2002-06-03 | 2004-06-10 | Shipley Co Llc | 電子デバイスの製造 |
SE521977C2 (sv) * | 2002-06-20 | 2003-12-23 | Mobile Media Group Stockholm A | Metod och apparat för att formatera en webbtjänst |
US7041748B2 (en) | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
EP1524247A1 (de) * | 2003-10-15 | 2005-04-20 | Asahi Glass Company, Limited | Mit Infrarot Schutzfilm bechichtetes Glas und Verfahren zur Herstellung |
JP2005243681A (ja) * | 2004-02-24 | 2005-09-08 | Tokyo Electron Ltd | 膜改質方法、膜改質装置及びスリミング量の制御方法 |
JP4687250B2 (ja) * | 2004-06-02 | 2011-05-25 | 東レ株式会社 | 感光性樹脂組成物 |
JP4639685B2 (ja) * | 2004-07-26 | 2011-02-23 | Jsr株式会社 | 光硬化性組成物及びそれを用いた光導波路 |
WO2006049720A1 (en) * | 2004-11-02 | 2006-05-11 | Dow Corning Corporation | Resist composition |
US7756384B2 (en) * | 2004-11-08 | 2010-07-13 | Dow Corning Corporation | Method for forming anti-reflective coating |
ATE400672T1 (de) | 2004-12-17 | 2008-07-15 | Dow Corning | Verfahren zur ausbildung einer antireflexionsbeschichtung |
CN101073039B (zh) * | 2004-12-17 | 2011-12-14 | 陶氏康宁公司 | 形成抗反射涂层的方法 |
US20090206328A1 (en) * | 2005-01-05 | 2009-08-20 | Kimihiro Matsukawa | Silicon-Containing Photosensitive Composition, Method for Forming Thin Film Pattern Using Same, Protective Film for Electronic Device, Gate Insulating Film And Thin Film Transistor |
JP2007187721A (ja) * | 2006-01-11 | 2007-07-26 | Sekisui Chem Co Ltd | 感光性組成物及び半導体素子 |
WO2007094848A2 (en) | 2006-02-13 | 2007-08-23 | Dow Corning Corporation | Antireflective coating material |
JP5099301B2 (ja) * | 2006-03-23 | 2012-12-19 | Jsr株式会社 | 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜 |
JP5099302B2 (ja) * | 2006-03-23 | 2012-12-19 | Jsr株式会社 | 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜 |
JP2010503763A (ja) * | 2006-09-18 | 2010-02-04 | スターファイアー システムズ, インコーポレイテッド | シロキサン系組成物の調製プロセス及びその誘導体組成物 |
US7867689B2 (en) * | 2007-05-18 | 2011-01-11 | International Business Machines Corporation | Method of use for photopatternable dielectric materials for BEOL applications |
US8470516B2 (en) * | 2007-05-18 | 2013-06-25 | International Business Machines Corporation | Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles |
JP5587791B2 (ja) | 2008-01-08 | 2014-09-10 | 東レ・ダウコーニング株式会社 | シルセスキオキサン樹脂 |
KR20100114075A (ko) * | 2008-01-15 | 2010-10-22 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
JP5581225B2 (ja) * | 2008-03-04 | 2014-08-27 | ダウ・コーニング・コーポレイション | シルセスキオキサン樹脂 |
EP2250215B1 (de) * | 2008-03-05 | 2020-03-25 | Dow Silicones Corporation | Silsesquioxanharze |
US20110236835A1 (en) * | 2008-12-10 | 2011-09-29 | Peng-Fei Fu | Silsesquioxane Resins |
WO2010068336A1 (en) | 2008-12-10 | 2010-06-17 | Dow Corning Corporation | Silsesquioxane resins |
EP2588536A1 (de) * | 2010-06-30 | 2013-05-08 | 3M Innovative Properties Company | Bei bedarf härtbare polysiloxanbeschichtungszusammensetzung |
CN102959024B (zh) | 2010-06-30 | 2016-08-24 | 3M创新有限公司 | 可固化聚硅氧烷涂层组合物 |
JP5818890B2 (ja) | 2010-06-30 | 2015-11-18 | スリーエム イノベイティブ プロパティズ カンパニー | 二重反応性シラン官能基を含む硬化性組成物 |
WO2013101477A1 (en) | 2011-12-29 | 2013-07-04 | 3M Innovative Properties Company | Curable polysiloxane coating composition |
WO2013106193A1 (en) | 2011-12-29 | 2013-07-18 | 3M Innovative Properties Company | Curable polysiloxane composition |
WO2013101742A1 (en) | 2011-12-29 | 2013-07-04 | 3M Innovative Properties Company | Curable-on-demand polysiloxane coating composition |
US9428605B2 (en) * | 2012-11-08 | 2016-08-30 | Neo Sitech Llc | Organic-inorganic hybrid material compositions and polymer composites |
CN112292638B (zh) * | 2018-04-24 | 2024-06-11 | 美国陶氏有机硅公司 | 正色调可光图案化有机硅 |
EP3817914A4 (de) * | 2018-06-08 | 2022-04-20 | Elkem Silicones Shanghai Co., Ltd. | Härtbare silikonzusammensetzung |
FI129480B (en) * | 2018-08-10 | 2022-03-15 | Pibond Oy | Silanol-containing organic-inorganic hybrid coatings for high-resolution patterning |
FI128886B (en) * | 2019-02-25 | 2021-02-26 | Pibond Oy | Functional hydrogen silicon oxane polymers and their uses |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58174418A (ja) * | 1982-04-07 | 1983-10-13 | Toshiba Corp | 光重合組成物 |
JPH06148887A (ja) * | 1991-01-28 | 1994-05-27 | Oki Electric Ind Co Ltd | 感光性樹脂組成物 |
US5238787A (en) * | 1991-04-22 | 1993-08-24 | Dow Corning Corporation | Photodelineable coatings from hydrogen silsesquioxane resin |
DE69324942T2 (de) * | 1992-02-14 | 1999-10-07 | Shipley Co., Inc. | Strahlungsempfindliche Zusammensetzungen und Verfahren |
JP2868672B2 (ja) * | 1992-08-31 | 1999-03-10 | 沖電気工業株式会社 | シリコーン樹脂組成物及びこれを用いたケイ酸ガラス薄膜の製造方法 |
-
1995
- 1995-02-02 JP JP01619395A patent/JP3499032B2/ja not_active Expired - Fee Related
-
1996
- 1996-01-24 US US08/590,847 patent/US5789460A/en not_active Expired - Lifetime
- 1996-01-31 DE DE69604940T patent/DE69604940T2/de not_active Expired - Lifetime
- 1996-01-31 EP EP96300676A patent/EP0725106B1/de not_active Expired - Lifetime
- 1996-02-02 KR KR1019960002498A patent/KR100362619B1/ko not_active IP Right Cessation
- 1996-06-21 TW TW085107491A patent/TW397937B/zh not_active IP Right Cessation
-
1998
- 1998-05-18 US US09/080,386 patent/US5891529A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0725106B1 (de) | 1999-11-03 |
JPH08211616A (ja) | 1996-08-20 |
US5789460A (en) | 1998-08-04 |
KR100362619B1 (ko) | 2003-05-16 |
US5891529A (en) | 1999-04-06 |
EP0725106A2 (de) | 1996-08-07 |
DE69604940T2 (de) | 2000-06-15 |
KR960032094A (ko) | 1996-09-17 |
TW397937B (en) | 2000-07-11 |
EP0725106A3 (de) | 1997-07-23 |
JP3499032B2 (ja) | 2004-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |