DE69534387D1 - Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet - Google Patents

Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet

Info

Publication number
DE69534387D1
DE69534387D1 DE69534387T DE69534387T DE69534387D1 DE 69534387 D1 DE69534387 D1 DE 69534387D1 DE 69534387 T DE69534387 T DE 69534387T DE 69534387 T DE69534387 T DE 69534387T DE 69534387 D1 DE69534387 D1 DE 69534387D1
Authority
DE
Germany
Prior art keywords
emitting device
containing compound
semiconductor light
group iii
iii nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69534387T
Other languages
English (en)
Other versions
DE69534387T2 (de
Inventor
Katsuhide Manabe
Hisaki Kato
Michinari Sassa
Shiro Yamazaki
Asai Makoto
Naoki Shibata
Koike Masayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11348494A external-priority patent/JP3016241B2/ja
Priority claimed from JP19791494A external-priority patent/JP3307094B2/ja
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of DE69534387D1 publication Critical patent/DE69534387D1/de
Application granted granted Critical
Publication of DE69534387T2 publication Critical patent/DE69534387T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
DE1995634387 1994-03-22 1995-03-21 Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet Expired - Fee Related DE69534387T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7651494 1994-03-22
JP11348494A JP3016241B2 (ja) 1994-03-22 1994-04-28 ３族窒化物半導体発光素子
JP19791494A JP3307094B2 (ja) 1994-07-28 1994-07-28 ３族窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
DE69534387D1 true DE69534387D1 (de) 2005-09-22
DE69534387T2 DE69534387T2 (de) 2006-06-14

Family

ID=27302178

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1995634387 Expired - Fee Related DE69534387T2 (de) 1994-03-22 1995-03-21 Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet
DE1995622026 Expired - Fee Related DE69522026T2 (de) 1994-03-22 1995-03-21 Lichtemittierende Halbleitervorrichtung mit Verbindung aus Stickstoff und Elementen der Gruppe III

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1995622026 Expired - Fee Related DE69522026T2 (de) 1994-03-22 1995-03-21 Lichtemittierende Halbleitervorrichtung mit Verbindung aus Stickstoff und Elementen der Gruppe III

Country Status (2)

Country Link
EP (2) EP0911888B1 (de)
DE (2) DE69534387T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
KR100267839B1 (ko) * 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
TW425722B (en) * 1995-11-27 2001-03-11 Sumitomo Chemical Co Group III-V compound semiconductor and light-emitting device
JPH1065215A (ja) * 1996-08-22 1998-03-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN106486572B (zh) * 2015-09-02 2020-04-28 新世纪光电股份有限公司 发光二极管芯片
TWI723207B (zh) 2016-08-18 2021-04-01 新世紀光電股份有限公司 微型發光二極體及其製造方法
TWD191816S (zh) 2017-12-12 2018-07-21 新世紀光電股份有限公司 發光二極體晶片

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778349B2 (ja) * 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
CA2120610C (en) * 1992-08-07 1999-03-02 Hideaki Imai Nitride based semiconductor device and manufacture thereof
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2914065B2 (ja) * 1992-12-08 1999-06-28 日亜化学工業株式会社 青色発光素子及びその製造方法
KR100286699B1 (ko) * 1993-01-28 2001-04-16 오가와 에이지 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법

Also Published As

Publication number Publication date
EP0675552B1 (de) 2001-08-08
EP0911888B1 (de) 2005-08-17
EP0911888A2 (de) 1999-04-28
EP0911888A3 (de) 1999-06-23
DE69534387T2 (de) 2006-06-14
DE69522026D1 (de) 2001-09-13
EP0675552A1 (de) 1995-10-04
DE69522026T2 (de) 2002-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee