DE69531153T3 - Optical projection system with exposure device - Google Patents

Optical projection system with exposure device

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Publication number
DE69531153T3
DE69531153T3 DE69531153T DE69531153T DE69531153T3 DE 69531153 T3 DE69531153 T3 DE 69531153T3 DE 69531153 T DE69531153 T DE 69531153T DE 69531153 T DE69531153 T DE 69531153T DE 69531153 T3 DE69531153 T3 DE 69531153T3
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Germany
Prior art keywords
lens
lens group
object
lt
positive
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DE69531153T
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German (de)
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DE69531153D1 (en
DE69531153T2 (en
Inventor
Hitoshi Matsuzawa
Yutaka Yokohama-shi Suenaga
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Nikon Corp
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Nikon Corp
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Priority to JP26393295 priority Critical
Priority to JP26393295A priority patent/JP3624973B2/en
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Publication of DE69531153T2 publication Critical patent/DE69531153T2/en
Publication of DE69531153T3 publication Critical patent/DE69531153T3/en
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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70241Optical aspects of refractive systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/14Optical objectives specially designed for the purposes specified below for use with infra-red or ultra-violet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/22Telecentric objectives or lens systems

Description

  • BACKGROUND THE INVENTION
  • Territory of invention
  • The The present invention relates to a projection optical system for Projecting a pattern on a first object onto a substrate or similar as a second object. In particular, the invention relates to a Optical projection system suitable for projection exposure a pattern for Semiconductor or for liquid crystals that on a reticle (or a mask) as a first object are formed on a substrate (silicon wafer, glass plate etc.) as a second object.
  • related State of the art
  • If Pattern of integrated circuits will be finer and finer a higher one capacity for the optical projection system needed which is used for printing on the wafer. In such circumstances can the resolution of a optical projection system noticeable can be improved by using shorter exposure wavelengths λ or Increase the numerical aperture (NA) of the optical projection system.
  • Around the requirements to make the pattern finer, to meet in the most recent Time a light source to expose changed from one to submit of exposure wavelengths the g-line (436 nm) to one for emitting light of the exposure wavelength of i-line (365 nm), which is mainly used in these years. Further will be Light sources for emitting light even shorter wavelengths, such as Eximer laser (248 nm, 193 nm) used as a light source for exposure.
  • It Optical projection systems have been proposed for projection printing from patterns on the reticle to the wafer with light the above different exposure wavelengths.
  • From Optical projection systems are required to image scrolling reduce and increase the resolution. Here the picture-making is caused by being caused by the occurrence the optical projection system, a curvature of the wafer, printed on the is to be on the image side of the projection optical system, a vault of the reticle with circuit patterns etc. written on it Object side of the projection optical system, etc.
  • Younger, more distant Progress in the micronization of transfer patterns reinforces the Need to reduce image distortion.
  • Around the influence of the wafer curvature to reduce the image distortion is so far a so-called image-side telecentric optical system has been used, which is the image-side Exit panel of the optical projection system far away from arranges the image plane (on the wafer).
  • on the other hand is due to image distortion due to the reticular curvature reduce, thought about a so-called object-side telecentric optical system to use the entrance aperture of the optical projection system far away from the object plane (on the reticle). Of the Prior art for arranging the entrance aperture of the optical Projection system is relatively far away from the object plane For example, in Japanese Patent Application Laid-Open No. 63-118115, No. 4-157412 and No. 5-173065.
  • RESUME OF THE INVENTION
  • One optical projection system according to the present invention Invention is a so-called bi-telecentric optical projection system, which is telecentric both on the object side and on the image side. An object of the invention is to provide an optical projection system, which can greatly improve aberrations, especially records (including Record higher Order) while of ensuring a relatively wide exposure range and a big one numerical aperture (NA).
  • According to one aspect of the present invention, there is provided an optical projection system for projecting an image of a first object onto a second object, comprising:
    a first lens group arranged between the first object and the second object with a positive one Power;
    a second lens group disposed between the first lens group and the second object without including a positive lens, the second lens group comprising
    a front lens arranged closest to the first object with a concave surface and negative refractive power directed toward the second object;
    a rear lens disposed closest to the second object with a concave surface and negative power directed to the first object, and
    an intermediate lens group having at least two negative lenses disposed between the front lens in the second lens group and the rear lens in the second lens group;
    a third positive power lens group disposed between the second lens group and the second object;
    a fourth lens group having a negative refractive power disposed between the third lens group and the second object;
    a fifth lens group having a positive refractive power disposed between the fourth lens group and the second object, the fifth lens group including at least seven positive lenses; and
    a sixth lens group having a positive refractive power disposed between the fifth lens group and the second object.
  • According to one Another aspect of the present invention is an exposure device provided, comprising a first object table capable of is a photosensitive substrate on a main surface thereof to keep; an illumination optical system for outputting exposure light a predetermined wavelength, to transfer a predetermined pattern on a mask to the substrate; a second stage for holding the mask; and an optical one Projection system according to claim 1, arranged in an optical Path between the first stage and the second stage for projecting an image of the mask onto the substrate.
  • According to a further aspect of the present invention, there is provided a method of manufacturing semiconductor devices or liquid crystal display devices, comprising the steps of:
    Preparing an exposure apparatus comprising an illumination optical system and a projection optical system for projecting an image of a first object onto a second object, the projection optical system being according to the aforementioned paragraph; Illuminating a mask prepared as a first object with light having a predetermined wavelength from the illumination optical system, the mask being formed with a predetermined pattern thereon; and projecting an image of the pattern on the mask onto a photosensitive substrate prepared as a second object through the projection optical system, thereby performing an exposure process.
  • The projection optical system according to the present invention can be applied to both an exposure apparatus using a scanning exposure method and an exposure apparatus using a one-shot exposure method. An exposure apparatus to which the projection optical system of the present invention is applicable comprises at least a first stage (wafer table WS) capable of holding a photosensitive substrate on a main surface thereof, an illumination optical system IS for transmitting a predetermined pattern the mask on a substrate, and a second stage (reticle table RS) for holding the mask, and the projection optical system PL of the present invention is disposed between the mask (first object) and the substrate (second object) to form an image of the mask to project onto the substrate (see 2 ).
  • The projection optical system according to the present invention comprises, for example, as shown in FIG 1 1 , a first lens group G 1 having a positive refractive power, a second lens group G 2 having a negative refractive power, a third lens group G 3 having a positive refractive power, a fourth lens group G 4 having a negative refractive power, a fifth lens group G 5 having a positive one Refractive power and a sixth lens group G 6 having a positive refractive power arranged in the indicated order from the mask (first object) to the substrate (second object).
  • Specifically, the second lens group G 2 includes a positive lens, and the second lens group G 2 comprises a negative power front lens L 2F disposed closest to the mask and facing a concave surface toward the substrate side, a rear lens group L 2R having a negative refractive power Next to the substrate and directed with a concave surface to the mask side, and an intermediate lens group G 2m with at least two negative lenses, disposed between the front lens L 2F and the rear lens L 2R . The above fifth lens group G 5 comprises at least seven positive lenses.
  • The first lens group G 1 having the positive refractive power contributes mainly to the correction of the recording while maintaining telecentricity. Specifically, the first lens group G 1 generates a positive trace which corrects, in good balance, a negative trace caused by the plurality of lens groups disposed on the second object side of the first lens group G 1 . The second lens group G 2 with the negative power and the fourth lens group G 4 with the negative power mainly contribute to the correction of the Petzval sum to smooth the image plane. The second lens group G 2 with the negative refractive power and the third lens group G 3 with the positive refractive power form an inverted telescopic system. This inverted telescopic system helps to secure the rearward focus (which is a distance from an optical surface, such as a lens surface, closest to the second object in the projection optical system to the second object) of the projection optical system. The fifth lens group G 5 with the positive refractive power and the sixth lens group G 6 , which similarly has the positive refractive power, contribute to the suppression of the generation of marks. Specifically, these lens groups G 5 , G 6 contribute as much as possible to suppressing the occurrence of spherical aberration so as to be well prepared for higher NA on the second object side.
  • Based on the above construction, both the front lens L 2F located closest to the first object in the second lens group G 2 with the concave surface are directed to the second object side and the negative power, as well as the rear lens L 2R is arranged closest to the second object side in the second lens group G 2 is directed with the concave surface to the first object and with the negative refractive power, both to correct for field curvature and coma at.
  • Further, the intermediate lens group G 2m , which is disposed between the front lens L 2F and the rear lens L 2R and has the negative refractive power, largely contributes to correction for field curvature. Furthermore, the intermediate lens group G 2m is composed only of negative lenses. The structure of the entire second lens group G 2 , which is composed of only negative lenses, shortens the overall length of the projection optical system while well suppressing the occurrence of higher-order plots which are likely to occur in the inter-lens group. Furthermore, the intermediate lens group G 2m includes at least two negative lenses. This structure contributes to completely suppressing the occurrence of coma.
  • Furthermore, the fifth lens group G 5 includes at least seven positive lenses. This structure arranges the refractive power to come from the fifth lens group itself to the respective positive lenses in a good balance. Thus, negative spherical aberration, which tends to occur in the fifth lens group G 5 with an increase in numerical aperture (NA), can be well suppressed. Accordingly, this construction (in which the fifth lens group G 5 includes at least seven positive lenses) ensures high-resolution power of the projection optical system.
  • The projection optical system according to the present invention satisfies the following conditions when the focal length of the first lens group G 1 f 1 , the focal length of the second lens group G 2 f 2 , the focal length of the third lens group G 3 f 3 is the focal length of the fourth lens group G 4 f 4 , the focal length of the fifth lens group G 5 f 5 is the focal length of the sixth lens group G 6 f 6 , the composite focal length of the intermediate lens group G 2m in the second lens group G 2 f 2m , and a distance between the object plane P 1 on the mask and the image plane P 2 on the substrate L is. 0.1 <f 1 / f 3 <17 (1) 0.05 <f 2 / f 4 <7 (2) 0.01 <f 5 / L <0.9 (3) 0.02 <f 6 / L <1.6 (4) 1,1 <f 2m / f 2 <9 (5)
  • Condition (1) defines an optimum ratio of the focal length f 1 of the first lens group G 1 with positive refractive power and the focal length f 3 of the third lens group G 3 with positive refractive power, which is an optimum refractive power balance between the first lens group G 1 and the third lens group G 3 is. This condition (1) is a condition for achieving mainly well-balanced correction with respect to history. Accordingly, if the ratio is set below the lower limit of the condition (1), a strong negative trace would occur because the refractive power of the third lens group G 3 becomes relatively low is considered to be the refractive power of the first lens group G 1 . If the ratio is set above the upper limit of the condition (1), a strong negative recording would occur because the refractive power of the first lens group becomes relatively weaker than the refractive power of the third lens group.
  • Condition (2) defines an optimum ratio of the focal length f 2 of the second lens group G 2 of the negative refractive power and the focal length f 4 of the fourth lens group G 4 of the negative refractive power, which is an optimum refractive power balance between the second negative power lens group G 2 is composed of a plurality of exclusively negative lenses and the fourth lens group G 4 of the negative refractive power. This condition (2) is a condition for mainly making good correction for field curvature while ensuring that a wide exposure field keeps the Petzval sum small. Accordingly, if the ratio were set below the lower limit of this condition (2), a large positive Petzval sum would occur because the power of the fourth lens group G 4 would become relatively weaker than that of the second lens group G 2 . If the ratio were set above the upper limit of the condition (2), a large positive Petzval sum would occur because the refractive power of the second lens group G 2 would become relatively weaker than that of the fourth lens group G 4 . In order to achieve a more balanced correction with respect to Petzval sum under a wide exposure field by setting the refractive power of the fourth lens group G 4 relatively stronger than that of the second lens group G 2 , it is preferable to set the lower limit of the above condition (2) to 0.4 set so that applies 0.4 <f 2 / f 4 ,
  • Condition (3) defines an optimum ratio of the focal length f 5 of the fifth lens group G 5 of the positive refractive power to the distance (object-image distance) L from the object plane P1 of the first object (reticle or the like) to the image plane P2 of the second object (Wafer or similar). This condition (3) is a condition for achieving a well-balanced correction for spherical aberration, distortion and Petzval sum while maintaining a large numerical aperture. If the ratio were set below the lower limit of this condition (3), the refractive power of the fifth lens group G 5 would become too strong, so that the fifth lens group G 5 causes a large negative spherical aberration and negative recording. In order to completely suppress negative spherical aberration that likes to occur in the fifth lens group G 5 , it is preferable to set the lower limit of the above condition (3) to 0.081, so that 0.081 <f 5 / L. Conversely, if the ratio were set above the upper limit of condition (3), the refractive power of the fifth lens group G 5 would become too weak and, of course, the refractive power of the fourth negative power lens group G 4 would become weak. As a result, it would become impossible to well correct a Petzval sum.
  • The condition (4) defines an optimum ratio of the focal length f 6 of the sixth lens group G 6 of the positive refractive power to the distance (object-image distance) L from the object plane P1 of the first object (reticle or the like) to the image plane P2 of the second object (FIG. Wafer or the like). This condition (4) is a condition for suppressing the occurrence of higher order spherical aberrations and negative recording while maintaining a large numerical aperture. If the ratio were set below the lower limit of this condition (4), the sixth lens group G 6 itself would cause large negative recording. On the other hand, if the ratio were set above the upper limit of this condition (4), higher order spherical aberrations would occur.
  • The condition (5) defines an optimum ratio of the composite focal length f 2m of the intermediate lens group G 2m with negative refractive power in the second lens group G 2 and the focal length f 2 of the second lens group G 2 .
  • This condition (5) is a condition for keeping Petzval sums small while suppressing the occurrence of records. Accordingly, if the ratio were set below the lower limit of this condition (5), the negative composite power of the intermediate lens group G 2m in the second lens group G 2 would become too strong, so that large negative recording would occur. In order to completely suppress the occurrence of writing and coma, it is preferable to set the lower limit of the above condition (5) to 1.86 so that 1.86 <f 2m / f 2 .
  • On the other hand, if the ratio were set above the upper limit of this condition (5), the negative refractive power of the intermediate lens group G 2m in the second lens group G 2 would become too weak, so that a large positive Petzval sum would result. In addition, the refractive power of the third lens group G 3 would also become weak, making it difficult to make the projection optical system compact. To achieve sufficient compactness of the optical projection system with good correction with respect to the Petzval sum, it is preferable to set the upper limit of the above condition (5) to 2.9, so that f 2m / f 2 <2.9.
  • Further, the projection optical system is preferably arranged to satisfy the following condition (6) when an axial distance from the first object to the first object-side focal point of the entire projection optical system is I and the distance from the first object to the second object is L. 1.0 <I / L (6)
  • The condition (6) defines an optimal ratio of the axial distance I from the first object to the first object-side focal point of the entire projection optical system to the distance (object-image distance) L from the object plane P1 of the first object (reticle or the like) to the image plane P2 of the second object (wafer or the like). Here, the first object-side focal point of the entire projection optical system means an intersection of light originating from the optical projection system with the optical axis thereof when parallel light in the paraxial region is caused relative to the optical axis of the projection optical system, the projection optical system from the side of the second Object thereof to enter and the light comes into the paraxial region of the optical projection system (see 1 ).
  • If The relationship under or over the limit of this condition (6) would be set, telecentricity would be on the Side of the first object of the optical projection system violently disturbed, what a change the enlargement and a change due to the deviation of the first object in increase the axial direction would. As a result, would it becomes difficult to get a true picture of the first object with a desired Magnification on to project the second object. To change the magnification and change due to the deviation of the first object in satisfactorily suppressing axial direction to set the lower limit of the above condition (6) to 1.7, so that 1.7 <I / L. Further, in order to get a well-balanced correction in terms of spherical Aberration and record the aperture to achieve while maintaining the compactness of the optical projection system, the preferred Set upper limit of the above condition (6) to 6.8, so that applies I / L <6.8.
  • Next, in order to well correct mainly the third order spherical aberration, the fifth positive power lens group G 5 is formed as in FIG 1 shown provided with a negative meniscus lens L 55 and a first positive lens L 54 adjacent to a concave surface of the negative meniscus lens L 55 and having a convex surface opposite to the concave surface of the negative meniscus lens L 55 . In addition, the fifth lens group G 5 is more preferably arranged to satisfy the following condition (7) when r 5n is a radius of curvature of the concave surface of the negative meniscus lens L 55 in the fifth lens group G 5 and r 5p is a radius of curvature of the convex surface of the first positive lens L 54 is opposite to the concave surface of the negative meniscus lens L 55 . 0 <(r 5p - r 5n ) / (R 5p + r 5n ) <1 (7)
  • If the ratio were set below the lower limit of condition (7), a third order spherical aberration correction would occur, which is not preferable. On the other hand, if the ratio were set above the upper limit of the condition (7), overcorrection of the third-order spherical aberration would occur, which is therefore not preferable. Here, in order to obtain a better spherical aberration correction, it is more preferable to set the lower limit of the condition (7) to 0.01, so that 0.01 <(r 5p -r 5n ) / (r 5p + r 5n ). In addition, it is further preferable to set the upper limit of the condition (7) to 0.7 so that (r 5p -r 5n ) / (r 5p + r 5n ) <0.7.
  • Here, it is preferable that the fifth lens group G 5 has at least one positive lens on the side of the convex surface of the negative meniscus lens L 55 adjacent to the above first positive lens L 54 and at least one positive lens on the opposite side of the negative meniscus lens L 55 with respect to the above first positive lens L 54 adjacent to the negative meniscus lens L 55 . These positive lenses correspond for example in the case of lens construction 1 the lens L 53 (second positive lens) and the lens L 56 (third positive lens). This construction can suppress the occurrence of higher-order spherical aberrations that are likely to occur with an increase in numerical aperture.
  • The sixth lens group G 6 is more preferably arranged to satisfy the following condition (8), where r 6F is a radius of curvature of a lens surface closest to the first object in the sixth line Lin G roup scorching 6 and d 6 an axial distance from the first object in the sixth lens group G 6 to the next lens surface (see the second object 1 ). 0.50 <d 6 / r 6F <1.50 (8)
  • If the ratio were set above the upper limit of this condition (8), the positive refractive power of the lens surface closest to the first object in the sixth lens group G 6 would become too strong, thereby causing large negative recording and coma. If the ratio were set below the lower limit of this condition (8), the positive refractive power of the lens surface closest to the first object in the sixth lens group G 6 would become too weak, thereby causing a strong coma. In order to more suppress the occurrence of coma, it is desirable to set the lower limit of condition (8) to 0.84 so that 0.84 <d 6 / r 6F .
  • The fifth lens group G 5 is desirably arranged to have a concave surface negative lens L 59 facing the second object side, located closest to the second object. Since this structure causes the negative lens L 59 closest to the second object in the fifth lens group G 5 to generate positive trace and negative Petzval sum, it can cancel out negative trace and positive Petzval sum due to positive lenses in the fifth lens group G 5 , In this case, the fifth lens group G 5 is more desirably arranged to satisfy the following conditions (9) where r 5F is a radius of curvature of a first object side lens surface of the negative lens L 59 closest to the second object in the fifth lens group and r 5R a radius of curvature of the fifth lens group second-object-side lens surface of the negative lens L 59 closest to the second object in the fifth lens group G 5 . 0.30 <(r 5F - r 5R ) / (R 5F + r 5R ) <1,28 (9)
  • If the ratio were set below the lower limit of this condition (9), it would be difficult to correct for both Petzval sum and coma. On the other hand, if the ratio were set above the upper limit of this condition (9), strong higher order coma would occur, which is therefore not preferred. Further, in order to prevent the occurrence of higher-order coma, it is preferable to set the upper limit of the condition (9) to 0.93, so that (r 5F -r 5R ) / (r 5F + r 5R ) <0.93.
  • The fifth lens group G5 is provided with a first positive meniscus lens L 51 disposed closest to the first object and directed with a convex surface to the second object and a second positive meniscus lens L 52 disposed on the second object side of the first positive meniscus lens L 51 and with a second positive meniscus lens L 51 convex surface directed to the second object side. Moreover, the fifth lens group G 5 is more preferably configured to satisfy the following condition when r 51F is a radius of curvature of a first object side lens surface in the first positive meniscus lens L 51 in the fifth lens group G 5 , r 51R is a radius of curvature of the second object side lens surface of the first positive meniscus lens L 51 in the fifth lens group G 5 , r 52F is a radius of curvature of a first object side surface in the second positive meniscus lens L 52 in the fifth lens group G 5 and r 52R is a curvature radius of the second object side lens surface in the second positive meniscus lens L 52 in the fifth lens group G 5 . 1.2 <Q 52 / Q 51 <8 (10)
  • In the above equation applies Q 51 = (r 51F - r 51R ) / (R 51F + r 51R ) Q 52 = (r 52F - r 52R ) / (R 52F + r 52R ).
  • If the ratio of the shape factor of this condition (10) were set above the upper limit thereof or below the lower limit thereof, it would be difficult to correct spherical aberration and coma appearing in the fifth lens group G 5 . As a result, it would become impossible to realize excellent imaging performance. In order to achieve a more balanced correction with respect to spherical aberration, it is preferable to set the lower limit of condition (10) to 3.3 so that 3.3 <Q 52 / Q 51 ,
  • Further, the fifth lens group G 5 is desirably arranged to satisfy the following conditions when r 51F is a radius of curvature of a first object side lens surface in the first positive meniscus lens L 51 in the fifth lens group G 5 , and r 51R is a radius of curvature of the second object side lens surface of the first positive meniscus lens L 51 in the fifth lens group G 5 is. 0.01 <Q 51 <0.8 (11)
  • In the above equation applies Q 51 = (r 51F - r 51R ) / (R 51F + r 51R ).
  • If the shape factor Q 51 in this condition (10) were set above the upper limit thereof or below the lower limit thereof, it would not be preferable to completely correct spherical aberration occurring in the fifth lens group G 5 . In order to more adequately correct spherical aberration, it is preferable to set the lower limit of the condition (11) to 0.09, so that 0.09 <Q 51 . Further, in order to achieve a much more balanced correction for coma, the upper limit of condition (11) is set to 0.25 so that Q 51 <0.25.
  • The front lens L 2F and the rear lens L 2R in the second lens group G 2 preferably satisfy the following condition when f 2F is the focal length of the front lens L 2F and f 2R is the focal length of the rear lens L 2R 0 ≤ f 2F / f 2R <18 (12)
  • Condition (12) defines an optimum ratio of the focal length f 2R of the rear lens L 2R in the second lens group G 2 and the focal length f 2F of the front lens L 2F in the second lens group G 2 . If the ratio of this condition (12) were set above the upper limit thereof or below the lower limit thereof, the balance of the refractive power of the first lens group G 1 or the third lens group G 3 would be disturbed. As a result, it would be difficult to achieve good correction in terms of recording or at the same time good correction for Petzval sum and astigmatism.
  • Around make the above lens groups operate to achieve sufficient Aberration correction is using the following specific Arrangements desirable.
  • First, the first lens group G 1 for having the first lens group G 1 configured to have a function of suppressing the occurrence of higher order and spherical aberration of the diaphragm is preferably arranged to have at least two positive lenses. In order that the third lens group G 3 is configured to have a function of suppressing the deterioration of the spherical aberration and the Petzval sum, the third lens group G 3 is preferably arranged to have at least three positive lenses. In order that the fourth lens group G 4 is configured to have a function of suppressing the occurrence of coma during the correction of the Petzval sum, the fourth lens group G 4 is preferably arranged to have at least three negative lenses. In order for the fifth lens group G 5 to be configured to have a function of suppressing the occurrence of spherical aberration, the fifth lens group G 5 is preferably arranged to have at least seven positive lenses. In addition, the fifth lens group G 5 is designed to have the fifth lens group G 5 configured to have a function of correcting negative and Petzval sum, preferably to have at least one negative lens. In order for the sixth lens group G 6 to be configured to condense the light on the second surface without causing large spherical aberration, the sixth lens group G 6 is preferably arranged to have at least one positive lens.
  • In order that the sixth lens group G 6 is turned off to have a function for further suppressing the occurrence of negative trace, the sixth lens group G 6 is preferably arranged to be composed of three or less lenses having at least one lens surface to satisfy the following conditions ( 13). In other words, it is preferable that the lenses constituting the sixth lens group G 6 have at least one lens surface for satisfying the following condition. 1 / | ΦL | <20 (13)
  • In the above equation applies
  • Φ:
    is a refractive power of the lens surface and
    L:
    is the distance from the first object to the second object.
  • The refractive power of the lens surface set forth herein is defined by the following equation when r is a radius of curvature of the lens surface, n 1 is a refractive index of a first-object-side medium of the lens surface, and n 2 is a refractive index of a second-object-side medium of the lens surface. Φ = (n 2 - n 1 ) / R
  • If Here four or more lenses have lens surfaces that meet this condition (13) fulfill, would this lead to a renewed occurrence of an increase in the Number of lens surfaces with a certain curvature near of the second object, which is not preferable.
  • The The present invention will be more fully understood from the detailed Description reproduced below and attached Drawings for illustrative purposes only are presented and are not intended to be the present invention limit.
  • Of the further scope of applicability of the present invention will become apparent from the detailed description given below apparently. However, it should be understood that the detailed description and specific examples while she preferred versions indicate the invention, only for explanation, there various changes and modifications within the spirit and scope of the The invention will be apparent to those skilled in the art from this detailed description become.
  • SUMMARY THE DRAWINGS
  • It shows
  • 1 Fig. 4 is a drawing for explaining common parts of lens layouts of the projection optical system according to the present invention;
  • 2 Fig. 12 is a drawing showing the schematic structure of a scanning exposure apparatus in which the projection optical system according to the present invention can be applied;
  • 3 Fig. 3 is a drawing showing the sectional structure of a photosensitive substrate;
  • 4 Fig. 4 is a drawing showing a lens layout of the first embodiment of the projection optical system according to the present invention;
  • 5 Fig. 4 is a drawing showing a lens layout of the second embodiment of the projection optical system according to the present invention;
  • 6 Fig. 3 is a drawing showing a lens layout of the third embodiment of the projection optical system according to the present invention;
  • 7 - 10 Drawings to show different aberrations in the 3 shown first embodiment;
  • 11 - 14 Drawings to show different aberrations in the 4 shown second embodiment;
  • 15 - 18 Drawings to show different aberrations in the 5 shown third embodiment; and
  • 19 12 is a drawing to show the schematic structure of an exposure device of the one-shot exposure method in which the projection optical system according to the present invention can be applied.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The projection optical system according to the present invention will be described with reference to FIG 2 to 19 explained. On 1 will be referred if necessary.
  • 2 Fig. 12 is a drawing to show the schematic structure of a scanning exposure apparatus in which the projection optical system according to the present invention can be applied.
  • 2 will be explained briefly. In the in 2 The exposure means shown in FIG. 9 is the reticle R (first object) as a photomask in which predetermined circuit patterns are formed, located in the object plane P1 of the projection optical system PL, and the wafer W (second object) as a photosensitive substrate in the image plane P2 of the projection optical system PL arranged. The reticle R is held by a reticle table RS arranged to move in the X direction upon exposure, and the wafer W is held on a wafer table WS arranged to be in -X direction to move opposite to the movement of the reticle RS. As in 2 Shown is a slit (rectangle) illumination region IF 1 extending in the Y direction on the reticle R, and an illumination optical system IS for uniformly illuminating the illumination region IF 1 is disposed above the reticle R. Exposure light is emitted from a light source LS provided in the exposure system.
  • In the above arrangement illuminated by the light source LS in the optical Lighting system IS supplied Light the reticle R in a slot pattern. An illustration of Light source LS in the illumination optical system IS is at the Position of the diaphragm (the position of the aperture stop AS) of the projection optical system PL formed, thereby implementing a so-called Köhler exposure. Then a picture of the pattern of the Köhler-lit reticle R projected onto the wafer W by the projection optical system PL (or transfer).
  • The photosensitive substrate disposed on the above wafer stage WS is one obtained by coating the entire surface of the exposed object 100, such as a silicon wafer, a glass plate or the like with a photosensitive material 200 such as photoresist, as shown in FIG 3 shown.
  • In response to this event, a region EF 1 of the pattern image of the reticle R exposed on the wafer W is a slit pattern (rectangular) extending in the Y direction, as in FIG 2 shown. Accordingly, when the projection magnification of the projection optical system is PL 1 / M, the reticle table RS and the wafer table WS are moved in mutually opposite directions along the X direction at the speed ratio M: 1, with the pattern image of the entire surface of the reticle R the wafer W is transmitted.
  • The technique relating to different exposure devices, as described above, is disclosed, for example, in US patent applications No. 08 / 255,927, No. 08 / 260,398, and No. 08 / 299,305 and US patents No. 4,497,015, No. 4,666,273, No. 5,194,893, No. 5,253,110, No. 5,333,035 and No. 5,379,091. The projection optical system according to the present invention Invention can be applied to any exposure device which is disclosed in the listed reference documents.
  • The above US Patent Application No. 08 / 255,927 describes the illumination optical system (using a laser light source) applicable to the scanning exposure apparatus. The above US Patent Application No. 08 / 260,398 describes the illumination optical system (using a lamp light source) applicable to the scanning exposure apparatus. US Patent Application 08 / 299,305 discloses a balancing mechanism applicable to the scanning exposure apparatus. U.S. Patent No. 4,497,015 describes the illumination optical system (using a lamp light source) applicable to popular exposure devices. U.S. Patent No. 4,666,273 discloses an example of the step-and-repeat type exposure apparatus. US Patent No. 5,194,893 discloses the scanning exposure apparatus, specifically, the illumination optical system, the illumination area, the mask-side and reticle-side interference systems, automatic focusing mechanisms, and an optical alignment system. The US. U.S. Patent No. 5,253,110 describes the illumination optical system (using a laser light source) applicable to the step-and-repeat type exposure apparatus. However, the illumination optical system disclosed in this reference can also be applied to the scanning exposure apparatus. US Patent No. 5,333,035 discloses a modified illumination optical system applicable to popular exposure devices. US Patent No. 5,379,091 discloses optical lighting In addition, U.S. Patent 5,245,384 also shows the illumination optical system using a mercury lamp applicable to ordinary exposure apparatus (steppers).
  • Now, the following embodiments show examples of the projection optical system in which an excimer laser for supplying light having an exposure wavelength λ of 248.4 nm is applicable as a light source LS within the illumination optical system IS. 4 to 6 show lens layouts of the first to third embodiments of the projection optical system according to the present invention.
  • As in 4 to 6 4, the projection optical system in each lens layout is composed in the order of the side of the reticle R as a first object, the first lens group G 1 having a positive refractive power, the second lens group G 2 having a negative refractive power, the third lens group G 3 having a positive refractive power, the fourth lens group G 4 having a negative refractive power, the fifth lens group G 5 having a positive refractive power, and the sixth lens group G 6 having a positive refractive power. These examples of the projection optical system are approximately telecentric on the object side (on the side of the reticle R) and on the image side (on the side of the wafer W) and have reduction factors).
  • In each in 4 to 6 The projection optical system shown is the object-image distance L (the distance from the object plane P1 to the image plane P2 or the distance from the reticle R to the wafer W) 1000, the image-side numerical apparatus NA is 0.6, the projection magnification is B 1/4 and the diameter of the exposure area of the wafer W of the projection optical system PL or the diagonal length of the slot exposure area on the wafer W is 26.4.
  • Next, the detailed objective layout of the first embodiment will be described with reference to FIG 4 explained. First, the first lens group P 1 has , in order from the object side, a negative lens (negative meniscus lens) L 11 having a concave surface facing the image side, two positive biconvene lenses L 11 and L 13, and a positive lens (biconvex lens) L 14 a convex surface directed to the object side.
  • Further, the second lens group G 2 is composed of a negative meniscus lens (front lens) L 2F which is located closest to the object and has a concave surface facing the image side, a negative meniscus lens (rear lens) L 2R closest to Image side and directed with a concave surface to the object side, and an intermediate lens group G 2m , between the negative meniscus lens L 2 F and the negative meniscus lens L 2R arranged. Specifically, the intermediate lens group G 2m is composed only of negative lenses. Specifically, the intermediate lens group G 2m is constructed of, in order from the object side, a negative lens (negative meniscus lens) L m1 having a concave surface facing the image side, and a negative biconcave lens L m2 .
  • The third lens group G 3 is composed, in order from the object side, of a positive lens (positive meniscus lens) L 31 having a convex surface facing the image side, a positive lens (biconvex lens) L 32 having a convex surface facing the image side, two Positive biconvex lenses L 33 and L 34 and a positive lens (positive meniscus lens) L 35 with a convex surface directed toward the object side. The fourth lens group G4 is composed, in the order of the object side, two negative lenses (two negative meniscus lenses) L 41 and L 42 with their concave surfaces facing the image side, a negative biconcave lens L 43 and a negative lens (biconcave lens) L 44 which has a concave surface directed to the object side.
  • The fifth lens group G 5 consists of seven positive lenses and two negative lenses. Specifically, the fifth lens group G 5 is composed of, in order from the object side, two positive meniscus lenses L 51 and L 52 with their convex surfaces facing the image side, two positive biconvex lenses L 53 and L 54 , a negative lens (negative meniscus lens ) L 55 with a concave surface facing the image side, a positive biconvex lens L 56 , two positive lenses (two positive meniscus lenses) L 57 and L 58 with their convex surfaces directed toward the object side and a negative lens (negative meniscus lens) L 59 having a concave surface directed to the image side. The sixth lens group G 6 is composed only of a positive lens (positive meniscus lens) L 61 which has a convex surface facing the object side.
  • Here, in the first lens group G 1 of the first embodiment, the image side lens surface of the negative lens (negative meniscus lens) L 11 having the concave surface facing the image side and the Object-side lens surface of the positive biconvex lens L 12 similar curvatures and are arranged relatively close to each other. These two lens surfaces correct for higher order.
  • Since the front lens L 2F in the second lens group G 2 is formed in a meniscus shape with the concave surface facing the image side, in the present embodiment, the occurrence of coma is facilitated. Further, because the rear lens L 2R in the second lens group G 2 is formed in a meniscus shape with the concave surface facing the object side, it can suppress the occurrence of coma in combination with the front lens L 2F . Further, because the intermediate lens group G 2m in the second lens group G 2 is composed of only negative lenses, the occurrence of higher-order plots is suppressed.
  • As described above, the fourth lens group G 4 is arranged such that the negative lens L 41 having the concave surface facing the image side is disposed on the object side of the negative biconcave lens L 43 , and so that the negative lens L 44 having the concave surface is Object side directed to the image side of the negative biconcave lens L 43 is arranged. Because of this arrangement, the fourth lens group G 4 corrects Petzval sums while suppressing the occurrence of coma.
  • The fifth lens group G 5 includes, as described above, seven positive lenses (L 51 , L 52 , L 53 , L 54 , L 56 , L 57 , L 58 ). Because of this arrangement, the fifth lens group G 5 suppresses spherical aberration caused by the increase of the numerical aperture NA by the fifth lens group G 5 itself. Further, in the fifth lens group G 5, the fourth positive lens L 54 from the object side has the convex surface facing the negative lens (negative meniscus lens) L 55 with the concave surface facing the object side and also has the convex lens surface on the opposite side (object side) Negative lens (negative meniscus lens) L 55 with the concave surface directed towards the object side. Including this positive biconvex lens L 54 , the fifth lens group G 5 suppresses the occurrence of higher order spherical aberrations caused by increasing the numerical aperture NA. The first embodiment shows an example in which, in order to suppress the occurrence of higher order spherical aberrations caused by increasing NA, the fifth lens group G 5 has been arranged to enclose the positive biconvex lens L 54 and the negative lens (negative meniscus lens ) L 55 with the concave surface facing the object side, arranged in the order shown from the object side. However, the same effect as above can be achieved by arranging them in reverse order and inverting the concave surface of the negative lens L 55 to the image side, specifically, by arranging the negative lens (negative meniscus lens) L 55 with the concave surface facing the image side and the positive biconvex lens L 54 in the order given from the object side.
  • In this embodiment, the aperture stop is disposed between the two positive meniscus lenses (L 51 , L 52 ) on the object side in the fifth lens group G 5 . In essence, it is preferable to arrange the aperture stop AS on the image side of the positive lens L 51 which is located closest to the object in the fifth lens group G 5 . This is because the aperture stop AS at such a favorable position suppresses higher-order spherical aberrations which are likely to occur in the fifth lens group G 5 as NA increases.
  • Next, the lens layout of the second embodiment of the projection optical system according to the present invention will be described with reference to FIG 5 explained. In the 5 The second embodiment shown differs in the lens layouts of the second lens group G 2 , the fourth lens group G 4 and the sixth lens group G 6 from that in FIG 4 shown first embodiment.
  • In the second embodiment, the intermediate lens group G 2m in the second lens group G 2 includes a negative lens more than that of the first embodiment and thus is formed of three negative lenses. Specifically, the intermediate lens group G 2m is composed, in order from the object side, of a negative lens (negative meniscus lens) L m1 having a concave surface facing the image side, a negative lens (plan concave lens) L m2 similarly having a concave surface directed to the image side and a negative biconcave lens L m3 . This arrangement of the intermediate lens group G 2m , which is composed of three negative lenses, effectively suppresses coma which tends to occur in the intermediate lens group G 2m .
  • In the fourth lens group G 4 of the first embodiment, the negative lens L 44 , which is located at the fourth position from the object side and has the concave surface facing the object side, was a biconcave lens. In contrast, in the fourth lens group G 4 of the second embodiment, the negative lens L 44 is a plano-concave lens.
  • The sixth lens group G 6 of the second embodiment includes a positive lens more than the first embodiment does and thus is composed of two positive lenses. Specifically, the sixth lens group G 6 is composed, in order from the object side, two positive lenses (positive meniscus lenses) L 61 and L 62 with their convex surfaces directed toward the object side.
  • Next, the lens layout of the third embodiment of the projection optical system according to the present invention will be described with reference to FIG 6 explained. In the 6 The third embodiment shown differs in the lens layouts of the first lens group G 1 and the second lens group G 2 from that in FIG 4 shown first embodiment.
  • The first lens group G 1 of the third embodiment includes one positive lens less than that in the first embodiment, and thus is composed of one negative lens and two positive lenses. Specifically, the first lens group G 1 in the order from the object side has a negative lens (negative meniscus lens) L 11 with a concave surface facing the image side, a positive biconvex lens L 12, and a positive lens (biconvex lens) L 13 having a convex surface toward the object side directed.
  • The intermediate lens group G 2m in the second lens group G 2 of the second embodiment includes a positive lens more than that in the first embodiment, and thus is composed of three negative lenses as in the second embodiment. Specifically, the intermediate lens group G 2m is composed, in order from the object side, two negative lenses (two negative meniscus lenses) L m1 and L m2 with their concave surfaces facing the image side and a negative biconvex lens L m3 . This arrangement of the intermediate lens group G 2m , which is composed of three negative lenses, effectively suppresses coma which tends to occur in the intermediate lens group G 2m .
  • Now Tables 1-1, 1-2, 2-1, 2-2, 3-1, 3-2 below show specifications and condition correspondence values of the first to third embodiments according to the present invention.
  • In the tables, numbers on the left represent orders of the object side (reticle side), curvature radius of the lens surfaces, d lens surface pitches, n refractive indices of synthetic quartz SiO 2 at the exposure wavelength λ of 248.4 nm, d0 a distance from the object plane (FIG. Reticle plane) of the most object-side (rectal-side) lens surface (first lens surface) in the first lens group G 1 (FIG. 1 ), Bf is a distance from the most image-side (wafer-side) lens surface in the sixth lens group G 6 to the image plane (wafer plane), B is the projection magnification of the projection optical system, NA is the image-side numerical aperture of the projection optical system, L is the object image. Image distance from the object plane (reticle plane) to the image plane (wafer plane), I the axial distance from the Objektbne (reticle plane) to the first object-side focal point of the entire projection optical system (provided that the first object-side focal point of the entire projection optical system Intersection means light originating therefrom with the optical axis of the projection optical system when parallel light in the paraxial region relative to the optical axis of the projection optical system is incident on the second object side thereof and the light in the paraxial region is from the projection optical system, f 1 the focal length of the first lens group G 1 , f 2 the focal length of the second lens group G 2 , f 3 the focal length of the third lens group G 3 , f 4 , the focal length of the fourth lens group G 4 , f 5 the focal length of the fifth lens group G 5 , f 6 is the focal length of the sixth lens group G 6 , f 2F is the focal length of the front lens L 2F closest to the object in the second lens group with the concave surface facing the image side, and negative refractive power f 2R is the focal length of the rear lens L 2R f 2m is the composite focal length of the intermediate lens group G 2m , disposed between the front lens L 2F and the rear lens L 2R in the second lens group r 51F , with the concave surface facing the object side and negative refractive power , the radius of curvature of the object-side surface of the first positive meniscus lens S 51 is located closest to the object in the fifth Lens group G 5 , r 51k , the radius of curvature of the image-side lens surface in the first positive meniscus lens L 51 , arranged closest to the object in the fifth lens group G 5 , r 52F, the curvature radius of the object-side lens surface in the second positive meniscus lens L 52 , respectively on the image side of the first positive meniscus lens L 51 in the fifth lens group G 5 , r 52R, the curvature radius of the image side lens surface in the second positive meniscus lens L 52 disposed on the image side of the first positive meniscus lens L 51 in the fifth lens group G 5 k, r 5n is the radius of curvature of the concave surface in the negative meniscus lens L 55 disposed within the fifth lens group G 5 , r 5p is the radius of curvature of the convex surface opposite to the concave surface of the negative meniscus lens L 55 in the first positive lens L 54 adjacent to the concave surface of the negative meniscus lens L 55 , the inner is provided with the fifth lens group G 5 , r 5F is the radius of curvature of the object-side lens surface in the negative lens se L 59 , disposed closest to the object side in the sixth lens group G 6 , d 6 is the axial distance from the most object-side lens surface of the sixth lens group G 6 to the image plane (see 1 ) and Φ the refractive power of a lens surface of a lens forming the sixth lens group G 6 . Here, Q 51 = (r 51F -r 51R ) / (r 51F + r 51R ) and Q 52 = (r 52F -r 52R ) / (r 52F + r 52R ).
  • TABLE 1-1 Specifications of First Embodiment
    Figure 00330001
  • Figure 00340001
  • TABLE 1-2 Condition correspondence values of the first embodiment
    Figure 00350001
  • TABLE 2-1 Specification of Second Embodiment
    Figure 00360001
  • Figure 00370001
  • TABLE 2-2 Condition correspondence values of the second embodiment
    Figure 00380001
  • TABLE 3-1 Specification of Third Embodiment
    Figure 00390001
  • Figure 00400001
  • TABLE 3-2 Condition correspondence values of the third embodiment
    Figure 00410001
  • In the first embodiment, as described above, the object-side lens surface of the positive lens L 61 has the value of 1 / | ΦL | = 0.0985, thereby satisfying condition (13). In the second embodiment, the object-side lens surface of the positive lens L 61 has the value of 1 / | ΦL | = 0.122 and the object-side lens surface of the positive lens surface L 62 has the value of 1 / | ΦL | = .383. Accordingly, both lens surfaces satisfy the condition (13). In the third embodiment, the object-side lens surface of the positive lens L 61 has the value of 1 / | ΦL | = 0.0966, thereby satisfying conditions (13). Therefore, the sixth lens group G 6 of each embodiment is composed of three or more lenses having at least one lens surface satisfying the condition (13).
  • Out the values of specifications of each embodiment as described above it is understood that every embodiment telecentricity achieved on the object side (reticle side) and on the image side (wafer side) while of ensuring a relatively wide exposure range and a big one numerical aperture.
  • Next are 7 to 11 Drawings for showing various aberrations of the first embodiment of the projection optical system according to the present invention with the in 4 shown lens layout. Special is 7 a drawing for showing spherical aberration of the first embodiment, 8th Astigmatism of the first embodiment, 9 Registering the first embodiment and 10 Coma of the first embodiment. In these aberration diagrams in 7 to 10 NA is the numerical aperture of the projection optical system and Y is the image height. In 8th To show the astigmatism, the dotted line represents the meridional image surface and the solid line represents the sagittal image surface.
  • In a similar way 11 to 14 Drawings for showing various aberrations of the second embodiment of the projection optical system according to the present invention with the in 5 shown lens layout. Special is 11 a diagram for showing spherical aberration of the second embodiment, 12 Astigmatism of the second embodiment, 13 List the second embodiment and 14 Coma of the second embodiment. 15 to 18 FIG. 15 are drawings for showing various aberrations of the third embodiment of the projection optical system according to the present invention with that in FIG 6 shown lens layout. Special is 15 a diagram for showing spherical aberration of the third embodiment, 16 Astigmatism of the third embodiment, 17 Record the third embodiment and 18 Coma of the third embodiment. Also in these Abberationsdiagrams the 11 to 18 NA corresponds to the numerical aperture of the op table projection system and Y image height. Furthermore, in the Abberationsdiagrams, in 12 and 16 the dashed line indicates the meridional image surface and the solid line respectively the sagittal image surface.
  • from Comparing the aberration diagrams, each embodiment is corrected in a good balance in terms of various aberrations. Especially the optical projection system with a big numeric Aperture reaching 0.6 and realized with high refractive power, while the very good over the entire picture is nearly corrected to a zero state.
  • each above embodiment showed an example using the KrF excimer laser, the Supplies light of 248.4 nm as a light source. Furthermore, close in each the embodiments applicable light sources extreme ultraviolet light sources such as B. ArS excimer laser, which supply a light of 193 nm, a mercury arc lamp, which supplies the light of the g-line (436 nm) and the i-line (365 nm) and light sources that emit light in a different from the ultraviolet Feed area.
  • In each embodiment, the lenses that make up the projection optical system are not cemented and all are made of a single optical material, that is, quartz (SiO 2 ). Since the embodiment is made of a single optical material as described above, a cost reduction is achieved here. However, if the exposure light has any half width, it is preferable to construct the projection optical system from a combination of quartz (SiO 2 ) and fluoride (CaF 2 ) lenses or a combination of lenses made of different kinds of different materials are to correct chromatic aberration. Specifically, when the exposure light source is broadband, it is effective for chromatic aberration correction to construct the projection optical system by preparing many kinds of lenses and combining these lenses.
  • Further, the examples of the projection optical system of the first to third embodiments have been described as applications of the scanning exposure apparatuses as shown in FIG 2 shown. However, for example, the exposure apparatus to which the optical exposure system of the present invention is applicable also includes exposure means of the one-shot exposure method for printing the patterns of the recticle R on the wafer W by a weft as in FIG 19 shown.
  • As described above is the projection optical system according to the present invention Invention the bi-telecentric optical system and realized the optical system high resolution Refraction as corrected as regards various aberrations in a good balance and with the big numerical aperture during ensuring a relatively wide exposure range. specially For example, the projection optical system of the present invention is very much well corrected regarding Record (including Record higher Order). Because the projection optical system of the present invention not just bi-telecentricity, but also very good correction regarding Achieving the result is correspondingly the reduction of picture scrolling extreme.
  • From The invention thus described, it will be apparent that the invention can be varied in many ways without Diverge range of the following claims.

Claims (22)

  1. An optical projection system for projecting an image of a first object onto a second object, comprising: a first lens group having a positive refractive power disposed between the first object and the second object; a second lens group disposed between the first lens group and the second object without including a positive lens, the second lens group comprising a front lens closest to the first object having a concave surface and negative power directed to the second object, one closest to the second lens second lens rear lens having a concave surface and negative power directed to the first object, and an intermediate lens group having at least two negative lenses disposed between the front lens in the second lens group and the rear lens in the second lens group; a third positive power lens group disposed between the second lens group and the second object; a fourth lens group disposed between the third lens group and the second object with negative Power; a fifth lens group having a positive refractive power disposed between the fourth lens group and the second object, the fifth lens group including at least seven positive lenses; and a sixth lens group having a positive refractive power disposed between the fifth lens group and the second object.
  2. An optical projection system according to claim 1, wherein the fifth Lens group comprises a negative meniscus lens and a positive lens adjacent a concave surface of the negative meniscus lens and with a convex surface across from the concave surface the negative meniscus lens.
  3. An optical projection system according to claim 1, wherein the fifth Lens group comprises a first positive meniscus lens the next at the first object and with a convex surface to the second Object directed, a second positive meniscus lens, seconded on the side of the second object with respect to the first positive meniscus lens and with a convex surface directed to the second object, and one between the first positive meniscus lens and the second positive meniscus lens disposed aperture stop.
  4. An optical projection system according to claim 1, which satisfies the following conditions: 0.1 <f 1 / f 3 <17 0.05 <f 2 / f 4 <7 0.01 <f 5 / L <0.9 0.02 <f 6 / L <1.6 1,1 <f 2m / f 2 <9 f 1 is a focal length of the first lens group, f 2 is a focal length of the second lens group, f 3 is a focal length of the third lens group, f 4 is a focal length of the fourth lens group, f 5 is a focal length of the fifth lens group, f 6 is a focal length of the sixth lens group, f 2m is a composite focal length of the intermediate lens group in the second lens group, and L is a distance from the first object to the second object.
  5. An optical projection system according to claim 4, which satisfies the following condition: 1.0 <I / L where I is an axial distance from the first object to the first object-side focal point of the entire projection optical system, and L is the distance from the first object to the second object.
  6. The projection optical system according to claim 4, wherein the fifth lens group comprises a negative meniscus lens and a first positive lens adjacent to a concave surface of the negative meniscus lens and having a convex surface opposite to the concave surface of the negative meniscus lens, and wherein the fifth lens group has the following condition Fulfills: 0 <(r 5p - r 5n ) / (R 5p + r 5n ) <1 wherein r 5n is a radius of curvature of the concave surface of the negative meniscus lens in the fifth lens group, and r 5p is a radius of curvature of the convex surface opposite to the concave surface of the negative meniscus lens in the first projection lens in the fifth lens group.
  7. An optical projection system according to claim 2 or 6, the fifth Lens group at least one second positive lens on the side of convex surface the negative meniscus lens comprises, and wherein the fifth lens group at least one third positive lens on the opposite Side to the negative meniscus lens with respect to the first positive lens includes, adjacent to the concave surface of the negative meniscus lens arranged.
  8. An optical projection system according to claim 4, wherein said sixth lens group has the following condition fulfilled: 0.50 <d 6 / r 6F <1.50 wherein r 6F is a radius of curvature of a lens surface closest to the first object in the sixth lens group and d 6 is an axial distance from the lens surface closest to the first object in the sixth lens group to the second object.
  9. An optical projection system according to claim 1 or 4, the fifth Lens group includes a negative lens, which is closest to the second object is arranged and directed to the second object concave surface Has.
  10. An optical projection system according to claim 9, wherein said fifth lens group satisfies the following condition: 0.30 <(r 5F - r 5R ) / (R 5F + r 5R ) <1.28 wherein r 5F is a radius of curvature of a first object side lens surface of the negative lens closest to the second object in the fifth lens group, and r 5R a radius of curvature of the second object side lens surface of the negative lens closest to the second object in the fifth lens group.
  11. The projection optical system of claim 4, wherein the fifth lens group comprises a first positive meniscus lens disposed closest to the first object and directed with a convex surface to the second object and a second positive meniscus lens disposed on the side of the second object with respect to the positive meniscus lens and having a convex surface directed to the second object, and wherein the fifth lens group satisfies the following condition: 1.2 <Q 52 / Q 51 <8 in which Q 51 = (r 51F - r 51R ) / (R 51F + r 51R ) Q 52 = (r 52F - r 52R ) / (R 52F + r 52R ) wherein r 51F is a radius of curvature of a first object side lens surface of the first positive meniscus lens, r 51R is a radius of curvature of the second object side lens surface of the first positive meniscus lens, r 52F is a radius of curvature of a first object side lens surface of the second positive meniscus lens, and r 52R is a radius of curvature of the second object side lens surface of second positive meniscus lens.
  12. An optical projection system according to claim 11, wherein said fifth lens group satisfies the following condition: 0.01 <Q 51 <0.8 in which Q 51 = (r 51F - r 51R ) / (R 51F + r 51R ) wherein r 51F is the radius of curvature of the first object side lens surface of the first positive meniscus lens in the fifth lens group, and r 51R is the radius of curvature of the second object side lens surface of the first positive meniscus lens in the fifth lens group.
  13. An optical projection system according to claim 11, further comprising Aperture diaphragm arranged between the first positive meniscus lens and the second positive meniscus lens full.
  14. An optical projection system according to claim 4, wherein the second lens group satisfies the following condition: 0 ≤ f 2F / f 2R <18 where f 2F is a focal length of the front lens in the second lens group and f 2R is a focal length of the rear lens in the second lens group.
  15. An optical projection system according to claim 1 or 4, wherein the first lens group comprises at least two positive lenses, the third lens group comprises at least three positive lenses, the fourth lens group comprises at least three negative lenses and the fifth Lens group the at least seven positive lenses and at least a negative lens and the sixth lens group at least includes a positive lens.
  16. The projection optical system of claim 4, wherein the sixth lens group comprises three or less lenses and each lens has at least one lens surface satisfying the following condition: 1 / | ΦL | <20 where Φ: a refractive power of the lens surface and L: the distance from the first object to the second object.
  17. An optical projection system according to claim 4, wherein an enlargement of the optical projection system is 1/4.
  18. Exposure device, comprising: a first Object table that is capable of a photosensitive substrate a main surface to keep it from; an optical illumination system for dispensing from exposure light of a predetermined wavelength to a predetermined pattern on a mask to transfer to the substrate; a second Object table for holding the mask; and an optical projection system according to claim 1, arranged in an optical path between the first stage and the second stage for projecting a Image of the mask on the substrate.
  19. An exposure apparatus according to claim 18, wherein the projection optical system satisfies the following conditions: 0.1 <f 1 / f 3 <17 0.05 <f 2 / f 4 <7 0.01 <f 5 / L <0.9 0.02 <f 6 / L <1.6 1,1 <f 2m / f 2 <9 f 1 is a focal length of the first lens group, f 2 is a focal length of the second lens group, f 3 is a focal length of the third lens group, f 4 is a focal length of the fourth lens group, f 5 is a focal length of the fifth lens group, f 6 is a focal length of the sixth lens group, f 2m is a composite focal length of the intermediate lens group in the second lens group, and L is a distance from an object plane on the mask to an image plane on the substrate.
  20. Method of manufacturing semiconductor devices or liquid crystal display devices, comprising the steps: Preparing an exposure device, which comprises an illumination optical system and an optical projection system for projecting an image of a first object onto a second one Object, wherein the optical projection system according to one of claims 1 to 17 is; Illuminate a mask that is prepared first Object with light having a predetermined wavelength from the illumination optical system, the mask being formed with a predetermined pattern thereon; and Projecting an image of the pattern on the mask a photosensitive substrate prepared as a second object, through the optical projection system, here an exposure process executive.
  21. The method of claim 20, wherein in the exposure process the mask and the substrate are relative to the projection optical system move during the Projecting the image of the pattern on the mask onto the substrate through the optical projection system.
  22. Exposure device according to claim 18 or 19, wherein the first stage and the second stage are movable are during projecting the image of the pattern on the mask onto the substrate through the optical projection system.
DE69531153T 1995-10-12 1995-11-17 Optical projection system with exposure device Expired - Lifetime DE69531153T3 (en)

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JP3624973B2 (en) 2005-03-02
EP0770895B2 (en) 2006-08-23
EP0770895A2 (en) 1997-05-02
US5831770A (en) 1998-11-03
DE69531153D1 (en) 2003-07-31
EP0770895A3 (en) 1997-10-08
JPH09105861A (en) 1997-04-22
DE69531153T2 (en) 2004-05-06
EP0770895B1 (en) 2003-06-25

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