DE69529883D1 - Anpassungsmetallschicht - Google Patents

Anpassungsmetallschicht

Info

Publication number
DE69529883D1
DE69529883D1 DE69529883T DE69529883T DE69529883D1 DE 69529883 D1 DE69529883 D1 DE 69529883D1 DE 69529883 T DE69529883 T DE 69529883T DE 69529883 T DE69529883 T DE 69529883T DE 69529883 D1 DE69529883 D1 DE 69529883D1
Authority
DE
Germany
Prior art keywords
metal layer
adjusting metal
adjusting
layer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69529883T
Other languages
English (en)
Other versions
DE69529883T2 (de
Inventor
Derkits, Jr
Ramesh R Varma
Jose Almeida Lourenco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69529883D1 publication Critical patent/DE69529883D1/de
Application granted granted Critical
Publication of DE69529883T2 publication Critical patent/DE69529883T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
DE69529883T 1994-11-23 1995-11-14 Anpassungsmetallschicht Expired - Lifetime DE69529883T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US344448 1994-11-23
US08/344,448 US5559817A (en) 1994-11-23 1994-11-23 Complaint layer metallization

Publications (2)

Publication Number Publication Date
DE69529883D1 true DE69529883D1 (de) 2003-04-17
DE69529883T2 DE69529883T2 (de) 2004-01-08

Family

ID=23350593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529883T Expired - Lifetime DE69529883T2 (de) 1994-11-23 1995-11-14 Anpassungsmetallschicht

Country Status (4)

Country Link
US (1) US5559817A (de)
EP (1) EP0714126B1 (de)
JP (1) JPH08213713A (de)
DE (1) DE69529883T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3022765B2 (ja) * 1996-03-27 2000-03-21 日本電気株式会社 半導体装置及び半導体素子の実装方法
DE19644941C1 (de) * 1996-10-29 1998-01-15 Jenoptik Jena Gmbh Hochleistungsdiodenlaser und Verfahren zu dessen Montage
GB9713855D0 (en) * 1997-06-30 1997-09-03 Transradio Ltd Coupling of optic fibres
US5990560A (en) * 1997-10-22 1999-11-23 Lucent Technologies Inc. Method and compositions for achieving a kinetically controlled solder bond
US5939788A (en) * 1998-03-11 1999-08-17 Micron Technology, Inc. Copper diffusion barrier, aluminum wetting layer and improved methods for filling openings in silicon substrates with cooper
US5989637A (en) * 1998-04-16 1999-11-23 Lucent Technologies, Inc. Method for preventing facet coating overspray
US6342442B1 (en) * 1998-11-20 2002-01-29 Agere Systems Guardian Corp. Kinetically controlled solder bonding
US6320265B1 (en) 1999-04-12 2001-11-20 Lucent Technologies Inc. Semiconductor device with high-temperature ohmic contact and method of forming the same
US6590913B1 (en) 1999-05-14 2003-07-08 Triquint Technology Holding Co. Barrier layer and method of making the same
EP1320889A1 (de) * 2000-09-29 2003-06-25 Infineon Technologies AG Verbindungseinrichtung
JP4131623B2 (ja) * 2001-09-12 2008-08-13 三洋電機株式会社 電極構造およびその製造方法
US6760352B2 (en) * 2001-09-19 2004-07-06 The Furukawa Electric Co., Ltd. Semiconductor laser device with a diffraction grating and semiconductor laser module
AT6666U1 (de) * 2002-09-23 2004-01-26 Plansee Ag Wärmesenke aus diamant-haltigem verbundwerkstoff mit mehrlagigem überzug
JP2006505935A (ja) * 2002-11-06 2006-02-16 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ バンプ構造の接合によって接続される回路素子を備える装置
JP4337520B2 (ja) * 2002-11-25 2009-09-30 日亜化学工業株式会社 リッジ導波路型半導体レーザ
TWI303909B (en) * 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode
US7707255B2 (en) 2003-07-01 2010-04-27 Microsoft Corporation Automatic grouping of electronic mail
US20050049049A1 (en) * 2003-08-26 2005-03-03 Igt Cocktail table
DE102004001956B4 (de) * 2004-01-13 2007-02-01 Infineon Technologies Ag Umverdrahtungssubstratstreifen mit mehreren Halbleiterbauteilpositionen
US7294929B2 (en) * 2003-12-30 2007-11-13 Texas Instruments Incorporated Solder ball pad structure
JP2006100369A (ja) * 2004-09-28 2006-04-13 Sharp Corp 半導体レーザ素子およびその製造方法
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US7628309B1 (en) * 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
EP1748480B1 (de) 2005-07-28 2009-06-24 Infineon Technologies AG Verbindungsstruktur zur Befestigung eines Halbleiterchips auf einem Metallsubstrat, Halbleiterchip und elektronisches Bauelement mit der Verbindungsstruktur, und Verfahren zur Herstellung der Verbindungsstruktur
US20080035703A1 (en) * 2006-08-09 2008-02-14 Daewoong Suh Oxidation resistant solder preform
DE102006057718A1 (de) * 2006-12-01 2008-06-05 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2010186808A (ja) * 2009-02-10 2010-08-26 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
JP5644160B2 (ja) * 2010-04-06 2014-12-24 三菱電機株式会社 半導体レーザ装置
US9166364B2 (en) * 2011-02-14 2015-10-20 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer
US9070387B1 (en) 2013-08-23 2015-06-30 Western Digital Technologies, Inc. Integrated heat-assisted magnetic recording head/laser assembly
US11610861B2 (en) * 2020-09-14 2023-03-21 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350990A (en) * 1979-02-28 1982-09-21 General Motors Corporation Electrode for lead-salt diodes
US4425195A (en) * 1982-11-10 1984-01-10 Martin Marietta Corporation Method of fabricating a diamond heat sink
US4772935A (en) * 1984-12-19 1988-09-20 Fairchild Semiconductor Corporation Die bonding process
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
JPS62196858A (ja) * 1986-02-24 1987-08-31 Nec Corp 半導体装置
FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
JP2697116B2 (ja) * 1989-04-19 1998-01-14 富士通株式会社 インジウム半田の接合構造
DE69231790T2 (de) * 1991-07-01 2002-03-07 Sumitomo Electric Industries, Ltd. Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung
US5230145A (en) * 1992-07-15 1993-07-27 At&T Bell Laboratories Assembly including patterned diamond film submount with self-aligned laser device
US5234153A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Permanent metallic bonding method

Also Published As

Publication number Publication date
EP0714126B1 (de) 2003-03-12
JPH08213713A (ja) 1996-08-20
EP0714126A1 (de) 1996-05-29
US5559817A (en) 1996-09-24
DE69529883T2 (de) 2004-01-08

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