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DE69333829D1 - Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung - Google Patents

Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Info

Publication number
DE69333829D1
DE69333829D1 DE1993633829 DE69333829A DE69333829D1 DE 69333829 D1 DE69333829 D1 DE 69333829D1 DE 1993633829 DE1993633829 DE 1993633829 DE 69333829 A DE69333829 A DE 69333829A DE 69333829 D1 DE69333829 D1 DE 69333829D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1993633829
Other languages
English (en)
Other versions
DE69333829T2 (de )
Inventor
Shuji Nakamura
Takashi Mukai
Naruhito Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date
Family has litigation

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE1993633829 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung Expired - Lifetime DE69333829D1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP33555692 1992-11-20
JP1812393 1993-01-08
JP1812293 1993-01-08
JP7087393A JP2560963B2 (ja) 1993-03-05 1993-03-05 窒化ガリウム系化合物半導体発光素子
JP7087493A JP2560964B2 (ja) 1993-03-05 1993-03-05 窒化ガリウム系化合物半導体発光素子
JP11454393A JP2713094B2 (ja) 1993-01-08 1993-05-17 半導体発光素子およびその製造方法
JP11454493A JP2713095B2 (ja) 1993-01-08 1993-05-17 半導体発光素子およびその製造方法
JP11454293A JP2809045B2 (ja) 1992-11-20 1993-05-17 窒化物半導体発光素子

Publications (1)

Publication Number Publication Date
DE69333829D1 true DE69333829D1 (de) 2005-07-14

Family

ID=27571840

Family Applications (4)

Application Number Title Priority Date Filing Date
DE1993633829 Expired - Lifetime DE69333829T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE1993619854 Expired - Lifetime DE69319854T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE1993633829 Expired - Lifetime DE69333829D1 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE1993619854 Expired - Lifetime DE69319854D1 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE1993633829 Expired - Lifetime DE69333829T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE1993619854 Expired - Lifetime DE69319854T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1993619854 Expired - Lifetime DE69319854D1 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Country Status (4)

Country Link
US (9) US5578839A (de)
EP (2) EP0844675B1 (de)
KR (5) KR970007135B1 (de)
DE (4) DE69333829T2 (de)

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