DE69329303D1 - Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus - Google Patents

Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus

Info

Publication number
DE69329303D1
DE69329303D1 DE69329303T DE69329303T DE69329303D1 DE 69329303 D1 DE69329303 D1 DE 69329303D1 DE 69329303 T DE69329303 T DE 69329303T DE 69329303 T DE69329303 T DE 69329303T DE 69329303 D1 DE69329303 D1 DE 69329303D1
Authority
DE
Germany
Prior art keywords
diffusion
bound
production
target structure
sputter target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329303T
Other languages
English (en)
Other versions
DE69329303T2 (de
Inventor
Tateo Ohhashi
Hideaki Fukuyo
Ichiroh Sawamura
Kenichirou Nakamura
Atsushi Fukushima
Masaru Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28229792A external-priority patent/JP3525348B2/ja
Priority claimed from JP4334899A external-priority patent/JPH06158296A/ja
Priority claimed from JP35110692A external-priority patent/JP3469261B2/ja
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Publication of DE69329303D1 publication Critical patent/DE69329303D1/de
Application granted granted Critical
Publication of DE69329303T2 publication Critical patent/DE69329303T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE69329303T 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus Expired - Lifetime DE69329303T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP28229792A JP3525348B2 (ja) 1992-09-29 1992-09-29 拡散接合されたスパッタリングターゲット組立体の製造方法
JP4334899A JPH06158296A (ja) 1992-11-24 1992-11-24 拡散接合されたスパッタリングターゲット組立体及びその製造方法
JP35110692A JP3469261B2 (ja) 1992-12-07 1992-12-07 拡散接合されたスパッタリングターゲット組立体及びその製造方法

Publications (2)

Publication Number Publication Date
DE69329303D1 true DE69329303D1 (de) 2000-09-28
DE69329303T2 DE69329303T2 (de) 2000-12-28

Family

ID=27336927

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69324986T Expired - Lifetime DE69324986T2 (de) 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Zerstäubungs-Target-Bauteil
DE69329124T Expired - Lifetime DE69329124T2 (de) 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus
DE69329303T Expired - Lifetime DE69329303T2 (de) 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69324986T Expired - Lifetime DE69324986T2 (de) 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Zerstäubungs-Target-Bauteil
DE69329124T Expired - Lifetime DE69329124T2 (de) 1992-09-29 1993-09-27 Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus

Country Status (4)

Country Link
EP (3) EP0848080B1 (de)
KR (1) KR960010166B1 (de)
DE (3) DE69324986T2 (de)
TW (1) TW234767B (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
DE4414470A1 (de) * 1994-04-26 1995-11-02 Leybold Ag Zerstäuberkathode
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5799860A (en) * 1995-08-07 1998-09-01 Applied Materials, Inc. Preparation and bonding of workpieces to form sputtering targets and other assemblies
US5857611A (en) 1995-08-16 1999-01-12 Sony Corporation Sputter target/backing plate assembly and method of making same
US5807443A (en) * 1995-11-30 1998-09-15 Hitachi Metals, Ltd. Sputtering titanium target assembly and producing method thereof
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US6274015B1 (en) 1996-12-13 2001-08-14 Honeywell International, Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
JP3485577B2 (ja) * 1996-12-13 2004-01-13 ジョンソン マッティー エレクトロニクス インコーポレイテッド 析出硬化したバッキングプレートを有する、拡散結合したスパッタリングターゲットアセンブリーおよびその製法
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
WO1998041669A1 (en) 1997-03-19 1998-09-24 Johnson Matthey Electronics, Inc. Ni-plated target diffusion bonded to a backing plate and method of making same
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6579431B1 (en) * 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6451185B2 (en) * 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6521108B1 (en) 1998-12-29 2003-02-18 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making same
EP1147241B1 (de) * 1998-12-29 2009-01-07 Tosoh Smd, Inc. Diffusionsgebundene sputtertargetanordnung und verfahren zu deren herstellung
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
US6277253B1 (en) * 1999-10-06 2001-08-21 Applied Materials, Inc. External coating of tungsten or tantalum or other refractory metal on IMP coils
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
AU2001296213A1 (en) 2000-05-22 2001-12-24 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US6619537B1 (en) 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
JP3905301B2 (ja) * 2000-10-31 2007-04-18 日鉱金属株式会社 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
KR100824928B1 (ko) * 2000-12-15 2008-04-28 토소우 에스엠디, 인크 고전력 스퍼터링 작업을 위한 마찰 끼워 맞춤 타겟 조립체
EP1349682B1 (de) 2000-12-18 2008-10-08 Tosoh Smd, Inc. Niedrigtemperaturverfahren zur sputtertarget/grundplatten-verbindung und dadurch hergestellte anordnungen
US20020162741A1 (en) * 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
KR100438002B1 (ko) * 2001-07-31 2004-06-30 현우정밀주식회사 청동합금계 결합재를 이용한 절삭 가공용 다이아몬드휠과 알루미늄플랜지와의 접합방법
JP4204978B2 (ja) * 2001-12-19 2009-01-07 日鉱金属株式会社 磁性体ターゲットとバッキングプレートとの接合方法及び磁性体ターゲット
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
US7372610B2 (en) 2005-02-23 2008-05-13 Sage Electrochromics, Inc. Electrochromic devices and methods
US7837929B2 (en) 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
US9334562B2 (en) 2011-05-10 2016-05-10 H.C. Starck Inc. Multi-block sputtering target and associated methods and articles
CN102554447A (zh) * 2011-12-26 2012-07-11 昆山全亚冠环保科技有限公司 高纯Al靶焊接方法
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
EP3587626B1 (de) * 2018-06-28 2023-02-22 Comadur S.A. Dekorteil, das durch inlayarbeiten erstellt wird

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290765A (ja) * 1988-05-16 1989-11-22 Toshiba Corp スパッタリングターゲット
KR940008020B1 (ko) * 1988-12-21 1994-08-31 가부시끼가이샤 도시바 스퍼터링장치용 타겟
FR2664618B1 (fr) * 1990-07-10 1993-10-08 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法

Also Published As

Publication number Publication date
EP0590904B1 (de) 1999-05-19
KR960010166B1 (ko) 1996-07-26
EP0848080A1 (de) 1998-06-17
EP0831155A1 (de) 1998-03-25
EP0848080B1 (de) 2000-07-26
DE69329124D1 (de) 2000-08-31
EP0590904A1 (de) 1994-04-06
TW234767B (de) 1994-11-21
DE69324986D1 (de) 1999-06-24
KR940007216A (ko) 1994-04-26
DE69324986T2 (de) 1999-09-30
DE69329303T2 (de) 2000-12-28
EP0831155B1 (de) 2000-08-23
DE69329124T2 (de) 2000-12-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIKKO MATERIALS CO., LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 831155

Country of ref document: EP

Representative=s name: PATENTANWAELTE MAGENBAUER & KOLLEGEN, 73730 ESSLIN