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Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Info

Publication number
DE69209630T2
DE69209630T2 DE1992609630 DE69209630T DE69209630T2 DE 69209630 T2 DE69209630 T2 DE 69209630T2 DE 1992609630 DE1992609630 DE 1992609630 DE 69209630 T DE69209630 T DE 69209630T DE 69209630 T2 DE69209630 T2 DE 69209630T2
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1992609630
Other languages
English (en)
Other versions
DE69209630D1 (de )
Inventor
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting lasers (SE-lasers)
    • H01S5/183Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors
DE1992609630 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel Expired - Lifetime DE69209630T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07815311 US5206871A (en) 1991-12-27 1991-12-27 Optical devices with electron-beam evaporated multilayer mirror

Publications (1)

Publication Number Publication Date
DE69209630T2 true DE69209630T2 (de) 1996-08-22

Family

ID=25217423

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1992609630 Expired - Fee Related DE69209630D1 (de) 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel
DE1992609630 Expired - Lifetime DE69209630T2 (de) 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1992609630 Expired - Fee Related DE69209630D1 (de) 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Country Status (6)

Country Link
US (1) US5206871A (de)
JP (1) JPH05251819A (de)
KR (1) KR0147857B1 (de)
CA (1) CA2083122C (de)
DE (2) DE69209630D1 (de)
EP (1) EP0549167B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10244447A1 (de) * 2002-09-24 2004-04-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

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US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5557626A (en) * 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
JP2891133B2 (ja) * 1994-10-24 1999-05-17 日本電気株式会社 面発光レーザ及び面発光レーザアレイ及び光情報処理装置
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JPH0945963A (ja) * 1995-07-31 1997-02-14 Eiko Eng:Kk GaN系半導体装置
DE69610610T2 (de) * 1995-12-26 2001-05-03 Nippon Telegraph & Telephone Oberflächenemittierender Laser mit vertikalem Resonator und Verfahren zu seiner Herstellung
US6169756B1 (en) * 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6208680B1 (en) 1997-12-23 2001-03-27 Lucent Technologies Inc. Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6724796B2 (en) * 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
EP1298461A1 (de) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Halbleiter Verteilten Bragg-Reflektor mit GaP und Halbleiterbauelement mit einem Resonanzhohlraum und einer solchen VBR
DE10208171A1 (de) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
GB1382401A (en) * 1973-02-13 1975-01-29 Inst Poluprovodnikov Solid state laser
US3984581A (en) * 1973-02-28 1976-10-05 Carl Zeiss-Stiftung Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers
JPH0423633B2 (de) * 1983-09-19 1992-04-22 Toyoda Chuo Kenkyusho Kk
JPS6179280A (en) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol Surface light-emitting type semiconductor laser device and manufacture thereof
JPS63245984A (en) * 1987-04-01 1988-10-13 Seiko Epson Corp Semiconductor light emitting element and manufacture thereof
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10244447A1 (de) * 2002-09-24 2004-04-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE10244447B4 (de) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür

Also Published As

Publication number Publication date Type
DE69209630D1 (de) 1996-05-09 grant
EP0549167A2 (de) 1993-06-30 application
EP0549167A3 (en) 1993-08-25 application
US5206871A (en) 1993-04-27 grant
CA2083122C (en) 1997-05-13 grant
KR0147857B1 (ko) 1998-11-02 grant
JPH05251819A (ja) 1993-09-28 application
EP0549167B1 (de) 1996-04-03 grant
CA2083122A1 (en) 1993-06-28 application

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