DE69129274D1 - Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix - Google Patents

Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix

Info

Publication number
DE69129274D1
DE69129274D1 DE69129274T DE69129274T DE69129274D1 DE 69129274 D1 DE69129274 D1 DE 69129274D1 DE 69129274 T DE69129274 T DE 69129274T DE 69129274 T DE69129274 T DE 69129274T DE 69129274 D1 DE69129274 D1 DE 69129274D1
Authority
DE
Germany
Prior art keywords
liquid crystal
thin film
field effect
effect transistor
crystal displays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69129274T
Other languages
English (en)
Other versions
DE69129274T2 (de
Inventor
Naoyasu Ikeda
Kenichi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69129274D1 publication Critical patent/DE69129274D1/de
Application granted granted Critical
Publication of DE69129274T2 publication Critical patent/DE69129274T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
DE69129274T 1990-06-25 1991-06-25 Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix Expired - Lifetime DE69129274T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16590790A JP2616160B2 (ja) 1990-06-25 1990-06-25 薄膜電界効果型トランジスタ素子アレイ

Publications (2)

Publication Number Publication Date
DE69129274D1 true DE69129274D1 (de) 1998-05-20
DE69129274T2 DE69129274T2 (de) 1998-11-26

Family

ID=15821272

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69119977T Expired - Lifetime DE69119977T2 (de) 1990-06-25 1991-06-25 Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix
DE69129274T Expired - Lifetime DE69129274T2 (de) 1990-06-25 1991-06-25 Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69119977T Expired - Lifetime DE69119977T2 (de) 1990-06-25 1991-06-25 Dünnfilm-Feldeffekt-Transistormatrix zur Verwendung in Flüssigkristallanzeigen mit aktiver Matrix

Country Status (4)

Country Link
US (1) US5182661A (de)
EP (2) EP0464579B1 (de)
JP (1) JP2616160B2 (de)
DE (2) DE69119977T2 (de)

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Also Published As

Publication number Publication date
EP0464579B1 (de) 1996-06-05
JPH0456828A (ja) 1992-02-24
EP0464579A3 (en) 1992-07-29
US5182661A (en) 1993-01-26
DE69119977T2 (de) 1997-01-30
JP2616160B2 (ja) 1997-06-04
DE69119977D1 (de) 1996-07-11
EP0668528A1 (de) 1995-08-23
EP0464579A2 (de) 1992-01-08
EP0668528B1 (de) 1998-04-15
DE69129274T2 (de) 1998-11-26

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