DE69126420D1 - Eine Halbleiterspeicheranordnung mit einer internen Spannungsgeneratorschaltung - Google Patents
Eine Halbleiterspeicheranordnung mit einer internen SpannungsgeneratorschaltungInfo
- Publication number
- DE69126420D1 DE69126420D1 DE69126420T DE69126420T DE69126420D1 DE 69126420 D1 DE69126420 D1 DE 69126420D1 DE 69126420 T DE69126420 T DE 69126420T DE 69126420 T DE69126420 T DE 69126420T DE 69126420 D1 DE69126420 D1 DE 69126420D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- voltage generator
- generator circuit
- internal voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Memory System (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3016694A JPH04255989A (ja) | 1991-02-07 | 1991-02-07 | 半導体記憶装置および内部電圧発生方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69126420D1 true DE69126420D1 (de) | 1997-07-10 |
DE69126420T2 DE69126420T2 (de) | 1997-10-30 |
Family
ID=11923406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69126420T Expired - Fee Related DE69126420T2 (de) | 1991-02-07 | 1991-10-17 | Eine Halbleiterspeicheranordnung mit einer internen Spannungsgeneratorschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6333873B1 (de) |
EP (1) | EP0498107B1 (de) |
JP (1) | JPH04255989A (de) |
KR (1) | KR950014905B1 (de) |
DE (1) | DE69126420T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347172A (en) * | 1992-10-22 | 1994-09-13 | United Memories, Inc. | Oscillatorless substrate bias generator |
US5337284A (en) * | 1993-01-11 | 1994-08-09 | United Memories, Inc. | High voltage generator having a self-timed clock circuit and charge pump, and a method therefor |
US5933855A (en) | 1997-03-21 | 1999-08-03 | Rubinstein; Richard | Shared, reconfigurable memory architectures for digital signal processing |
US6895452B1 (en) | 1997-06-04 | 2005-05-17 | Marger Johnson & Mccollom, P.C. | Tightly coupled and scalable memory and execution unit architecture |
EP0986787A2 (de) * | 1997-06-04 | 2000-03-22 | Richard Rubinstein | Prozessor, der mit einer speicherabbildenden rechenmachine eine schnittstelle bildet |
US6674112B1 (en) * | 1997-06-27 | 2004-01-06 | Hitachi, Ltd. | Semiconductor integrated circuit device |
JP2002015565A (ja) * | 2000-06-29 | 2002-01-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4160790B2 (ja) * | 2002-06-28 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体装置 |
AU2003250575A1 (en) | 2002-08-07 | 2004-02-25 | Mmagix Technology Limited | Apparatus, method and system for a synchronicity independent, resource delegating, power and instruction optimizing processor |
KR100520138B1 (ko) * | 2002-11-28 | 2005-10-10 | 주식회사 하이닉스반도체 | 펌핑전압 발생장치 |
KR100542708B1 (ko) * | 2003-05-28 | 2006-01-11 | 주식회사 하이닉스반도체 | 고전압 발생기 |
KR100586545B1 (ko) * | 2004-02-04 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 오실레이터용 전원공급회로 및 이를이용한 전압펌핑장치 |
KR100604657B1 (ko) * | 2004-05-06 | 2006-07-25 | 주식회사 하이닉스반도체 | 최적화된 내부전압을 공급할 수 있는 전원공급회로를구비하는 반도체 메모리 장치 |
KR100761358B1 (ko) * | 2004-06-03 | 2007-09-27 | 주식회사 하이닉스반도체 | 반도체 기억 소자 및 그의 내부 전압 조절 방법 |
KR100689817B1 (ko) | 2004-11-05 | 2007-03-08 | 삼성전자주식회사 | 전압 발생 회로 및 이 회로를 구비하는 반도체 메모리 장치 |
KR100702124B1 (ko) * | 2005-04-01 | 2007-03-30 | 주식회사 하이닉스반도체 | 내부전압 공급회로 |
KR100696956B1 (ko) * | 2005-04-29 | 2007-03-20 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100696958B1 (ko) * | 2005-04-29 | 2007-03-20 | 주식회사 하이닉스반도체 | 내부 전압 발생 회로 |
KR100733414B1 (ko) * | 2005-04-30 | 2007-06-29 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100733419B1 (ko) * | 2005-04-30 | 2007-06-29 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
KR100649973B1 (ko) * | 2005-09-14 | 2006-11-27 | 주식회사 하이닉스반도체 | 내부 전압 발생 장치 |
US7417494B2 (en) * | 2005-09-29 | 2008-08-26 | Hynix Semiconductor Inc. | Internal voltage generator |
US8001434B1 (en) | 2008-04-14 | 2011-08-16 | Netlist, Inc. | Memory board with self-testing capability |
KR100902060B1 (ko) * | 2008-05-08 | 2009-06-15 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법 |
JP5667932B2 (ja) * | 2011-06-16 | 2015-02-12 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
US10199090B2 (en) * | 2016-09-21 | 2019-02-05 | Apple Inc. | Low active power write driver with reduced-power boost circuit |
JP7166797B2 (ja) * | 2018-06-13 | 2022-11-08 | ラピスセミコンダクタ株式会社 | 電圧生成回路、半導体記憶装置、及び電圧生成方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
JPS56117390A (en) * | 1980-02-16 | 1981-09-14 | Fujitsu Ltd | Semiconductor memory device |
US4460835A (en) * | 1980-05-13 | 1984-07-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator |
US4494223B1 (en) * | 1982-09-16 | 1999-09-07 | Texas Instruments Inc | Sequentially clocked substrate bias generator for dynamic memory |
JPS59162690A (ja) * | 1983-03-04 | 1984-09-13 | Nec Corp | 擬似スタテイツクメモリ |
JPH069114B2 (ja) | 1983-06-24 | 1994-02-02 | 株式会社東芝 | 半導体メモリ |
US4585954A (en) * | 1983-07-08 | 1986-04-29 | Texas Instruments Incorporated | Substrate bias generator for dynamic RAM having variable pump current level |
JPS60170962A (ja) | 1984-02-16 | 1985-09-04 | Nec Corp | 半導体集積回路 |
US4577293A (en) | 1984-06-01 | 1986-03-18 | International Business Machines Corporation | Distributed, on-chip cache |
JPS6159688A (ja) * | 1984-08-31 | 1986-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH0793009B2 (ja) * | 1984-12-13 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
US4731758A (en) | 1985-06-21 | 1988-03-15 | Advanced Micro Devices, Inc. | Dual array memory with inter-array bi-directional data transfer |
JPS6214368A (ja) * | 1985-07-11 | 1987-01-22 | Victor Co Of Japan Ltd | デイスク駆動装置 |
JPS6238590A (ja) | 1985-08-13 | 1987-02-19 | Fujitsu Ltd | 半導体記憶装置 |
JPS62164296A (ja) | 1986-01-14 | 1987-07-20 | Sanyo Electric Co Ltd | 半導体メモリ |
JPH0817032B2 (ja) | 1986-03-12 | 1996-02-21 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS62223891A (ja) | 1986-03-26 | 1987-10-01 | Hitachi Ltd | 半導体記憶装置 |
JPH0799625B2 (ja) * | 1986-06-02 | 1995-10-25 | 松下電子工業株式会社 | 基板バイアス電圧発生器 |
JPS6339057A (ja) | 1986-08-05 | 1988-02-19 | Fujitsu Ltd | 仮想記憶メモリ |
JPS6381692A (ja) | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 半導体記憶装置 |
US4912636A (en) * | 1987-03-13 | 1990-03-27 | Magar Surendar S | Data processing device with multiple on chip memory buses |
US4894770A (en) | 1987-06-01 | 1990-01-16 | Massachusetts Institute Of Technology | Set associative memory |
JP2714944B2 (ja) | 1987-08-05 | 1998-02-16 | 三菱電機株式会社 | 半導体記憶装置 |
JP2631663B2 (ja) * | 1987-08-20 | 1997-07-16 | 富士写真フイルム株式会社 | 所望画像信号範囲決定方法 |
JPH01146187A (ja) | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | キヤッシュメモリ内蔵半導体記憶装置 |
JPH01225354A (ja) | 1988-03-04 | 1989-09-08 | Hitachi Ltd | 半導体装置 |
JPH01263993A (ja) | 1988-04-13 | 1989-10-20 | Hitachi Ltd | 半導体記憶装置 |
US5200925A (en) * | 1988-07-29 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Serial access semiconductor memory device and operating method therefor |
JPH0724298B2 (ja) * | 1988-08-10 | 1995-03-15 | 日本電気株式会社 | 半導体記憶装置 |
US4961167A (en) * | 1988-08-26 | 1990-10-02 | Mitsubishi Denki Kabushiki Kaisha | Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein |
JPH0287392A (ja) | 1988-09-22 | 1990-03-28 | Hitachi Ltd | 半導体記憶装置 |
US5185721A (en) * | 1988-10-31 | 1993-02-09 | Texas Instruments Incorporated | Charge-retaining signal boosting circuit and method |
KR910004737B1 (ko) * | 1988-12-19 | 1991-07-10 | 삼성전자 주식회사 | 백바이어스전압 발생회로 |
KR910009555B1 (ko) * | 1989-01-09 | 1991-11-21 | 조경연 | 싱글 포트 듀얼 ram(spdram) |
KR920010749B1 (ko) * | 1989-06-10 | 1992-12-14 | 삼성전자 주식회사 | 반도체 집적소자의 내부전압 변환회로 |
KR940008295B1 (ko) * | 1989-08-28 | 1994-09-10 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체메모리 |
FR2668668B1 (fr) * | 1990-10-30 | 1994-02-04 | Samsung Electronics Co Ltd | Generateur de tension de substrat pour un dispositif a semiconducteurs. |
US5239639A (en) * | 1990-11-09 | 1993-08-24 | Intel Corporation | Efficient memory controller with an independent clock |
JP3315130B2 (ja) * | 1991-05-20 | 2002-08-19 | 三菱電機株式会社 | 半導体集積回路 |
US5146110A (en) * | 1991-05-22 | 1992-09-08 | Samsung Electronics Co., Ltd. | Semiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operation |
US5208557A (en) * | 1992-02-18 | 1993-05-04 | Texas Instruments Incorporated | Multiple frequency ring oscillator |
-
1991
- 1991-02-07 JP JP3016694A patent/JPH04255989A/ja active Pending
- 1991-10-17 DE DE69126420T patent/DE69126420T2/de not_active Expired - Fee Related
- 1991-10-17 EP EP91309555A patent/EP0498107B1/de not_active Expired - Lifetime
-
1992
- 1992-02-01 KR KR1019920001630A patent/KR950014905B1/ko not_active IP Right Cessation
-
1997
- 1997-09-29 US US08/942,692 patent/US6333873B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0498107B1 (de) | 1997-06-04 |
DE69126420T2 (de) | 1997-10-30 |
KR950014905B1 (ko) | 1995-12-16 |
JPH04255989A (ja) | 1992-09-10 |
KR920017102A (ko) | 1992-09-26 |
EP0498107A3 (en) | 1993-01-13 |
EP0498107A2 (de) | 1992-08-12 |
US6333873B1 (en) | 2001-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |