DE69010752D1 - Vorrichtung zur Vermeidung der Drahtschwingung in einem Einkristallziehapparat. - Google Patents

Vorrichtung zur Vermeidung der Drahtschwingung in einem Einkristallziehapparat.

Info

Publication number
DE69010752D1
DE69010752D1 DE69010752T DE69010752T DE69010752D1 DE 69010752 D1 DE69010752 D1 DE 69010752D1 DE 69010752 T DE69010752 T DE 69010752T DE 69010752 T DE69010752 T DE 69010752T DE 69010752 D1 DE69010752 D1 DE 69010752D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal puller
wire vibration
avoiding wire
avoiding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69010752T
Other languages
English (en)
Other versions
DE69010752T2 (de
Inventor
Koji Mizuishi
Isamu Harada
Yasushi Nakamura
Michiaki Oda
Seiichiro Ohtsuka
Yoshihiro Hirano
Masahiko Urano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9630489A external-priority patent/JPH02279586A/ja
Priority claimed from JP4820589U external-priority patent/JPH02140981U/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69010752D1 publication Critical patent/DE69010752D1/de
Publication of DE69010752T2 publication Critical patent/DE69010752T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69010752T 1989-04-18 1990-04-18 Vorrichtung zur Vermeidung der Drahtschwingung in einem Einkristallziehapparat. Expired - Fee Related DE69010752T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9630489A JPH02279586A (ja) 1989-04-18 1989-04-18 単結晶引上装置のワイヤー振れ止め機構
JP4820589U JPH02140981U (de) 1989-04-26 1989-04-26

Publications (2)

Publication Number Publication Date
DE69010752D1 true DE69010752D1 (de) 1994-08-25
DE69010752T2 DE69010752T2 (de) 1995-02-16

Family

ID=26388438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69010752T Expired - Fee Related DE69010752T2 (de) 1989-04-18 1990-04-18 Vorrichtung zur Vermeidung der Drahtschwingung in einem Einkristallziehapparat.

Country Status (3)

Country Link
US (1) US5089239A (de)
EP (1) EP0396284B1 (de)
DE (1) DE69010752T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4123337A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Vorrichtung zum kristallziehen
US5582642A (en) * 1995-06-20 1996-12-10 Memc Electronic Materials, Inc. Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine
JPH09165289A (ja) * 1995-12-13 1997-06-24 Komatsu Electron Metals Co Ltd 単結晶インゴット把持装置および把持方法
CN1045462C (zh) * 1996-07-22 1999-10-06 中国石油化工总公司 一种重质馏份油中压加氢裂化方法
US5986748A (en) * 1998-08-21 1999-11-16 Seh America Inc Dual beam alignment device and method
JP4079548B2 (ja) * 1999-04-30 2008-04-23 株式会社荏原製作所 結晶の連続引き上げ装置
JP4059639B2 (ja) * 2001-03-14 2008-03-12 株式会社荏原製作所 結晶の引上装置
US20050066888A1 (en) * 2003-09-30 2005-03-31 Griggs Jesse B. Active dampening orbit stopper for Czochralski crystal growth
US20050087126A1 (en) * 2003-10-22 2005-04-28 Pratt Daniel F. Non-contact orbit control system for Czochralski crystal growth
CN105019018A (zh) * 2015-07-31 2015-11-04 常州市宜控自动控制系统有限公司 一种软轴晃动主动干预稳定装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
JPS6065789A (ja) * 1983-09-21 1985-04-15 Toshiba Mach Co Ltd 半導体引上機における引上軸横振れ防止装置
JPH01106489A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0396284B1 (de) 1994-07-20
US5089239A (en) 1992-02-18
DE69010752T2 (de) 1995-02-16
EP0396284A1 (de) 1990-11-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee