DE68925219D1 - Semiconductor laser device and manufacturing method for the semiconductor laser device - Google Patents
Semiconductor laser device and manufacturing method for the semiconductor laser deviceInfo
- Publication number
- DE68925219D1 DE68925219D1 DE68925219T DE68925219T DE68925219D1 DE 68925219 D1 DE68925219 D1 DE 68925219D1 DE 68925219 T DE68925219 T DE 68925219T DE 68925219 T DE68925219 T DE 68925219T DE 68925219 D1 DE68925219 D1 DE 68925219D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- manufacturing
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63027668A JP2685778B2 (en) | 1988-02-10 | 1988-02-10 | Semiconductor laser device |
JP63037543A JP2728672B2 (en) | 1988-02-22 | 1988-02-22 | Semiconductor laser device, double hetero wafer, and method of manufacturing the same |
JP63069641A JP2685788B2 (en) | 1988-03-25 | 1988-03-25 | Semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68925219D1 true DE68925219D1 (en) | 1996-02-08 |
DE68925219T2 DE68925219T2 (en) | 1996-05-30 |
Family
ID=27285905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68925219T Expired - Fee Related DE68925219T2 (en) | 1988-02-10 | 1989-02-10 | Semiconductor laser device and manufacturing method for the semiconductor laser device |
Country Status (3)
Country | Link |
---|---|
US (1) | US5034957A (en) |
EP (1) | EP0328134B1 (en) |
DE (1) | DE68925219T2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2685209B2 (en) * | 1988-03-25 | 1997-12-03 | 株式会社東芝 | Semiconductor device and semiconductor light emitting device |
JPH069282B2 (en) * | 1988-09-09 | 1994-02-02 | 株式会社東芝 | Semiconductor laser device |
US5065404A (en) * | 1989-07-12 | 1991-11-12 | Kabushiki Kaisha Toshiba | Transverse-mode oscillation semiconductor laser device |
US5235194A (en) * | 1989-09-28 | 1993-08-10 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with InGaAlP |
US5103271A (en) * | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
JPH03129892A (en) * | 1989-10-16 | 1991-06-03 | Toshiba Corp | Semiconductor light emitting element |
US5058120A (en) * | 1990-02-28 | 1991-10-15 | Kabushiki Kaisha Toshiba | Visible light emitting semiconductor laser with inverse mesa-shaped groove section |
US5144633A (en) * | 1990-05-24 | 1992-09-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and manufacturing method thereof |
JPH0449691A (en) * | 1990-06-18 | 1992-02-19 | Mitsubishi Electric Corp | Visible-ray laser diode |
US5276698A (en) * | 1990-09-20 | 1994-01-04 | Sumitomo Electric Ind., Ltd. | Semiconductor laser having an optical waveguide layer including an AlGaInP active layer |
JP2863648B2 (en) * | 1991-04-16 | 1999-03-03 | 三菱電機株式会社 | Visible light semiconductor laser |
US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
EP0614257B1 (en) * | 1993-03-03 | 1997-12-29 | Nec Corporation | Gain-guided type laser diode |
JPH08125126A (en) * | 1994-10-19 | 1996-05-17 | Mitsubishi Electric Corp | Semiconductor device |
JPH08250808A (en) * | 1995-03-15 | 1996-09-27 | Toshiba Corp | Semiconductor device and its manufacture |
JP3373386B2 (en) * | 1997-03-19 | 2003-02-04 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JP3692269B2 (en) * | 1999-01-29 | 2005-09-07 | シャープ株式会社 | Semiconductor laser device and manufacturing method thereof |
JP3862894B2 (en) | 1999-08-18 | 2006-12-27 | 株式会社東芝 | Semiconductor laser device |
JP2002374038A (en) * | 2001-06-14 | 2002-12-26 | Mitsubishi Electric Corp | Semiconductor laser device |
US7215691B2 (en) * | 2002-09-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2518202B2 (en) * | 1986-01-29 | 1996-07-24 | ソニー株式会社 | Method for manufacturing semiconductor laser device |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
-
1989
- 1989-02-07 US US07/307,278 patent/US5034957A/en not_active Expired - Lifetime
- 1989-02-10 EP EP89102326A patent/EP0328134B1/en not_active Expired - Lifetime
- 1989-02-10 DE DE68925219T patent/DE68925219T2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0328134B1 (en) | 1995-12-27 |
EP0328134A2 (en) | 1989-08-16 |
EP0328134A3 (en) | 1989-11-15 |
DE68925219T2 (en) | 1996-05-30 |
US5034957A (en) | 1991-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |