DE60335476D1 - Verfahrung zum variieren der plasmafrequenz eines josephson-tunnelübergangs mit hochtemperatur-supraleiter - Google Patents

Verfahrung zum variieren der plasmafrequenz eines josephson-tunnelübergangs mit hochtemperatur-supraleiter

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Publication number
DE60335476D1
DE60335476D1 DE60335476T DE60335476T DE60335476D1 DE 60335476 D1 DE60335476 D1 DE 60335476D1 DE 60335476 T DE60335476 T DE 60335476T DE 60335476 T DE60335476 T DE 60335476T DE 60335476 D1 DE60335476 D1 DE 60335476D1
Authority
DE
Germany
Prior art keywords
josephone
variating
leaders
plasma frequency
temperature super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335476T
Other languages
English (en)
Inventor
Yoshihiko Takano
Takeshi Hatano
Sangjae Kim
Akira Ishii
Shunichi Arisawa
Kazumasa Togano
Masashi Tachiki
Tsutomu Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science filed Critical National Institute for Materials Science
Application granted granted Critical
Publication of DE60335476D1 publication Critical patent/DE60335476D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
DE60335476T 2002-09-20 2003-09-18 Verfahrung zum variieren der plasmafrequenz eines josephson-tunnelübergangs mit hochtemperatur-supraleiter Expired - Lifetime DE60335476D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002275873A JP4552007B2 (ja) 2002-09-20 2002-09-20 高温超伝導ジョセフソントンネル接合構造における交差角度の設定方法
PCT/JP2003/011912 WO2004027885A1 (ja) 2002-09-20 2003-09-18 高温超伝導ジョセフソントンネル接合

Publications (1)

Publication Number Publication Date
DE60335476D1 true DE60335476D1 (de) 2011-02-03

Family

ID=32025045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335476T Expired - Lifetime DE60335476D1 (de) 2002-09-20 2003-09-18 Verfahrung zum variieren der plasmafrequenz eines josephson-tunnelübergangs mit hochtemperatur-supraleiter

Country Status (7)

Country Link
US (1) US20050215436A1 (de)
EP (1) EP1548853B1 (de)
JP (1) JP4552007B2 (de)
AT (1) ATE492909T1 (de)
DE (1) DE60335476D1 (de)
DK (1) DK1548853T3 (de)
WO (1) WO2004027885A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7610071B2 (en) * 2006-03-27 2009-10-27 Uchicago Argonne, Llc Tunable, superconducting, surface-emitting teraherz source

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306705A (en) * 1991-07-18 1994-04-26 Board Of Trustees Of The Leland Stanford Junior University Superconductor-normal-superconductor with distributed Sharvin point contacts
JP3690823B2 (ja) * 1994-03-29 2005-08-31 独立行政法人科学技術振興機構 超伝導接合体
DE60134923D1 (de) * 2000-08-21 2008-09-04 Nat Inst For Materials Science Verfahren zur Herstellung eines hochtemperatursupraleitenden Josephson-Übergangs

Also Published As

Publication number Publication date
WO2004027885A1 (ja) 2004-04-01
JP4552007B2 (ja) 2010-09-29
EP1548853A1 (de) 2005-06-29
JP2004111864A (ja) 2004-04-08
EP1548853B1 (de) 2010-12-22
US20050215436A1 (en) 2005-09-29
EP1548853A4 (de) 2007-03-28
DK1548853T3 (da) 2011-03-14
ATE492909T1 (de) 2011-01-15

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