DE60334282D1 - Boronphosphid-Halbleiterbauelement - Google Patents

Boronphosphid-Halbleiterbauelement

Info

Publication number
DE60334282D1
DE60334282D1 DE60334282T DE60334282T DE60334282D1 DE 60334282 D1 DE60334282 D1 DE 60334282D1 DE 60334282 T DE60334282 T DE 60334282T DE 60334282 T DE60334282 T DE 60334282T DE 60334282 D1 DE60334282 D1 DE 60334282D1
Authority
DE
Germany
Prior art keywords
boronphosphid
semiconductor component
semiconductor
component
boronphosphid semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60334282T
Other languages
English (en)
Inventor
Takashi Udagawa
Tamotsu Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002018188A external-priority patent/JP3951719B2/ja
Priority claimed from JP2002026271A external-priority patent/JP4100493B2/ja
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority claimed from PCT/JP2003/000798 external-priority patent/WO2003065465A2/en
Application granted granted Critical
Publication of DE60334282D1 publication Critical patent/DE60334282D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

DE60334282T 2002-01-28 2003-01-28 Boronphosphid-Halbleiterbauelement Expired - Lifetime DE60334282D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002018188A JP3951719B2 (ja) 2002-01-28 2002-01-28 リン化硼素系半導体発光素子、その製造方法およびランプ
JP2002026271A JP4100493B2 (ja) 2002-02-04 2002-02-04 リン化硼素半導体層を含む半導体素子、その製造方法、発光ダイオードおよびリン化硼素半導体層
US35675602P 2002-02-15 2002-02-15
US35673802P 2002-02-15 2002-02-15
PCT/JP2003/000798 WO2003065465A2 (en) 2002-01-28 2003-01-28 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer

Publications (1)

Publication Number Publication Date
DE60334282D1 true DE60334282D1 (de) 2010-11-04

Family

ID=42813923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334282T Expired - Lifetime DE60334282D1 (de) 2002-01-28 2003-01-28 Boronphosphid-Halbleiterbauelement

Country Status (1)

Country Link
DE (1) DE60334282D1 (de)

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