DE60304780T2 - Substratstruktur für eine elektronische Anordnung und elektronische Anordnung - Google Patents
Substratstruktur für eine elektronische Anordnung und elektronische Anordnung Download PDFInfo
- Publication number
- DE60304780T2 DE60304780T2 DE2003604780 DE60304780T DE60304780T2 DE 60304780 T2 DE60304780 T2 DE 60304780T2 DE 2003604780 DE2003604780 DE 2003604780 DE 60304780 T DE60304780 T DE 60304780T DE 60304780 T2 DE60304780 T2 DE 60304780T2
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- thin film
- metal thin
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- wurtzite
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- 101100149246 Caenorhabditis elegans sem-4 gene Proteins 0.000 description 1
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Classifications
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H10N30/877—Conductive materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Acoustics & Sound (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
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JP2002254790 | 2002-08-30 | ||
JP2002254790A JP3947443B2 (ja) | 2002-08-30 | 2002-08-30 | 電子デバイス用基板および電子デバイス |
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DE60304780D1 DE60304780D1 (de) | 2006-06-01 |
DE60304780T2 true DE60304780T2 (de) | 2006-09-14 |
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DE2003604780 Expired - Lifetime DE60304780T2 (de) | 2002-08-30 | 2003-09-01 | Substratstruktur für eine elektronische Anordnung und elektronische Anordnung |
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US (1) | US6855996B2 (ko) |
EP (1) | EP1396889B1 (ko) |
JP (1) | JP3947443B2 (ko) |
KR (1) | KR100607738B1 (ko) |
CN (1) | CN1312728C (ko) |
DE (1) | DE60304780T2 (ko) |
TW (1) | TWI229373B (ko) |
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JP2004297359A (ja) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | 表面弾性波素子、周波数フィルタ、発振器、電子回路、及び電子機器 |
US7411339B2 (en) * | 2003-11-28 | 2008-08-12 | Seiko Epson Corporation | Manufacturing method of actuator device and liquid jet apparatus provided with actuator device formed by manufacturing method of the same |
JP4737375B2 (ja) * | 2004-03-11 | 2011-07-27 | セイコーエプソン株式会社 | アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法並びに液体噴射装置の製造方法 |
JP2006019935A (ja) | 2004-06-30 | 2006-01-19 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP2006253172A (ja) * | 2005-03-08 | 2006-09-21 | Toshiba Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
JPWO2006098101A1 (ja) * | 2005-03-16 | 2008-08-21 | 日本電気株式会社 | 金属材料、金属材料を用いた半導体集積回路用配線および被覆膜 |
JP2007036914A (ja) * | 2005-07-29 | 2007-02-08 | Doshisha | 薄膜共振器 |
KR100655437B1 (ko) | 2005-08-09 | 2006-12-08 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조방법 |
JP4756461B2 (ja) * | 2005-10-12 | 2011-08-24 | 宇部興産株式会社 | 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子 |
JP5174673B2 (ja) * | 2005-10-14 | 2013-04-03 | エスティーマイクロエレクトロニクス エス.アール.エル. | 基板レベル・アセンブリを具えた電子装置及びその製造処理方法 |
JP4849445B2 (ja) * | 2006-03-06 | 2012-01-11 | 学校法人同志社 | 薄膜共振器 |
US20080179762A1 (en) * | 2007-01-25 | 2008-07-31 | Au Optronics Corporation | Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same |
JP4537434B2 (ja) * | 2007-08-31 | 2010-09-01 | 株式会社日立製作所 | 酸化亜鉛薄膜、及びそれを用いた透明導電膜、及び表示素子 |
JP5475272B2 (ja) * | 2008-03-21 | 2014-04-16 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
EP2252077B1 (en) * | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
WO2013061572A1 (ja) * | 2011-10-28 | 2013-05-02 | キヤノンアネルバ株式会社 | 成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、照明装置 |
JP5817673B2 (ja) * | 2011-11-18 | 2015-11-18 | 株式会社村田製作所 | 圧電薄膜共振子及び圧電薄膜の製造方法 |
CN103426968A (zh) * | 2012-05-14 | 2013-12-04 | 杜邦太阳能有限公司 | 增强导电氧化物层雾度的方法及透明导电氧化物透明基底 |
US8623747B1 (en) * | 2012-12-17 | 2014-01-07 | Translucent, Inc. | Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices |
US9904776B2 (en) | 2016-02-10 | 2018-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fingerprint sensor pixel array and methods of forming same |
US10573686B2 (en) | 2016-06-19 | 2020-02-25 | Iqe Plc | Epitaxial AIN/cREO structure for RF filter applications |
US10263136B1 (en) * | 2016-10-25 | 2019-04-16 | Triad National Security, Llc | Direct band gap group IV semiconductors and methods of preparing the same |
IT201700103489A1 (it) | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Metodo di fabbricazione di una membrana filtrante sottile, dispositivo trasduttore acustico includente la membrana filtrante, metodo di assemblaggio del dispositivo trasduttore acustico e sistema elettronico |
US11678581B2 (en) * | 2017-09-22 | 2023-06-13 | Tdk Corporation | Piezoelectric thin film element |
GB2571529B (en) | 2018-02-28 | 2021-04-14 | Novosound Ltd | Formation of piezoelectric devices |
JP7167626B2 (ja) * | 2018-03-09 | 2022-11-09 | 株式会社リコー | アクチュエータ、液体吐出ヘッド、液体吐出ユニット及び液体を吐出する装置 |
TWI751352B (zh) * | 2018-07-05 | 2022-01-01 | 法商索泰克公司 | 集成射頻元件用底材及其製作方法 |
JP7115257B2 (ja) * | 2018-11-29 | 2022-08-09 | Tdk株式会社 | 圧電薄膜素子 |
JP7425960B2 (ja) * | 2019-10-29 | 2024-02-01 | Tdk株式会社 | 圧電薄膜素子 |
JP6780805B1 (ja) * | 2019-11-01 | 2020-11-04 | 三菱電機株式会社 | 化合物半導体の結晶欠陥観察方法 |
KR20220055526A (ko) * | 2020-10-26 | 2022-05-04 | 삼성디스플레이 주식회사 | 반도체 구조물을 포함하는 적층 구조물 및 이의 제조 방법 |
WO2023218690A1 (ja) * | 2022-05-12 | 2023-11-16 | 株式会社村田製作所 | Mems素子および圧電音響デバイス |
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JP2924574B2 (ja) * | 1993-05-31 | 1999-07-26 | 富士ゼロックス株式会社 | 配向性強誘電体薄膜素子 |
JP3223233B2 (ja) | 1994-08-17 | 2001-10-29 | ティーディーケイ株式会社 | 酸化物薄膜、電子デバイス用基板および酸化物薄膜の形成方法 |
JP3357227B2 (ja) * | 1995-07-21 | 2002-12-16 | 日立建機株式会社 | 圧電素子およびその製造方法 |
KR100214765B1 (ko) * | 1996-03-21 | 1999-08-02 | 노영민 | 기판상에 (200)방향으로 우선 배향된 백금 박막 형성방법, 그 방법에 의하여 형성된 백금박막을 구비한 기판 및 전자소자 |
JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
JP3504851B2 (ja) * | 1998-02-20 | 2004-03-08 | 旭化成株式会社 | 化合物半導体膜の製造方法 |
JP2000022205A (ja) * | 1998-07-03 | 2000-01-21 | Tdk Corp | 半導体発光素子 |
JP4404995B2 (ja) * | 1999-07-26 | 2010-01-27 | 独立行政法人産業技術総合研究所 | A面サファイア基板を用いたZnO系化合物半導体発光素子およびその製法 |
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JP4016583B2 (ja) * | 2000-08-31 | 2007-12-05 | 株式会社村田製作所 | 圧電薄膜共振子、フィルタおよび電子機器 |
JP2002076023A (ja) * | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置 |
CN1154155C (zh) * | 2001-01-12 | 2004-06-16 | 中国科学院半导体研究所 | Ⅲ族氮化物单/多层异质应变薄膜的制作方法 |
JP2002222746A (ja) * | 2001-01-23 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 窒化物半導体ウェーハ及びその製造方法 |
TW541723B (en) * | 2001-04-27 | 2003-07-11 | Shinetsu Handotai Kk | Method for manufacturing light-emitting element |
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- 2002-08-30 JP JP2002254790A patent/JP3947443B2/ja not_active Expired - Fee Related
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2003
- 2003-08-29 TW TW92123907A patent/TWI229373B/zh not_active IP Right Cessation
- 2003-08-29 KR KR20030060108A patent/KR100607738B1/ko not_active IP Right Cessation
- 2003-08-29 US US10/650,764 patent/US6855996B2/en not_active Expired - Lifetime
- 2003-09-01 CN CNB031556671A patent/CN1312728C/zh not_active Expired - Fee Related
- 2003-09-01 DE DE2003604780 patent/DE60304780T2/de not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
DE60304780D1 (de) | 2006-06-01 |
US6855996B2 (en) | 2005-02-15 |
CN1487563A (zh) | 2004-04-07 |
CN1312728C (zh) | 2007-04-25 |
TW200405433A (en) | 2004-04-01 |
EP1396889A3 (en) | 2005-06-08 |
EP1396889B1 (en) | 2006-04-26 |
JP2004095843A (ja) | 2004-03-25 |
JP3947443B2 (ja) | 2007-07-18 |
KR20040020024A (ko) | 2004-03-06 |
US20040099918A1 (en) | 2004-05-27 |
KR100607738B1 (ko) | 2006-08-01 |
TWI229373B (en) | 2005-03-11 |
EP1396889A2 (en) | 2004-03-10 |
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