DE60302831D1 - Halbleiterschalter mit isolierten MOS-Transistoren - Google Patents

Halbleiterschalter mit isolierten MOS-Transistoren

Info

Publication number
DE60302831D1
DE60302831D1 DE60302831T DE60302831T DE60302831D1 DE 60302831 D1 DE60302831 D1 DE 60302831D1 DE 60302831 T DE60302831 T DE 60302831T DE 60302831 T DE60302831 T DE 60302831T DE 60302831 D1 DE60302831 D1 DE 60302831D1
Authority
DE
Germany
Prior art keywords
mos transistors
semiconductor switch
insulated
insulated mos
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60302831T
Other languages
English (en)
Other versions
DE60302831T2 (de
Inventor
Tomonori Okashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Application granted granted Critical
Publication of DE60302831D1 publication Critical patent/DE60302831D1/de
Publication of DE60302831T2 publication Critical patent/DE60302831T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
DE60302831T 2002-05-30 2003-05-30 Halbleiterschalter mit isolierten MOS-Transistoren Expired - Lifetime DE60302831T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002156602A JP4262933B2 (ja) 2002-05-30 2002-05-30 高周波回路素子
JP2002156602 2002-05-30

Publications (2)

Publication Number Publication Date
DE60302831D1 true DE60302831D1 (de) 2006-01-26
DE60302831T2 DE60302831T2 (de) 2006-08-31

Family

ID=29417212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60302831T Expired - Lifetime DE60302831T2 (de) 2002-05-30 2003-05-30 Halbleiterschalter mit isolierten MOS-Transistoren

Country Status (4)

Country Link
US (1) US6836172B2 (de)
EP (1) EP1367717B1 (de)
JP (1) JP4262933B2 (de)
DE (1) DE60302831T2 (de)

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WO2006002347A1 (en) 2004-06-23 2006-01-05 Peregrine Semiconductor Corporation Integrated rf front end
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JP5112620B2 (ja) * 2005-05-31 2013-01-09 オンセミコンダクター・トレーディング・リミテッド 化合物半導体装置
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
JP2008071796A (ja) * 2006-09-12 2008-03-27 Toshiba Corp 半導体装置及び半導体装置の製造方法
US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
US20080217727A1 (en) * 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
JP4342569B2 (ja) * 2007-04-17 2009-10-14 株式会社東芝 高周波スイッチ回路
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
JP5450955B2 (ja) * 2007-12-26 2014-03-26 株式会社東芝 高周波スイッチ
EP3958468B1 (de) 2008-02-28 2024-01-31 pSemi Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
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US8058922B2 (en) * 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
US8605398B2 (en) 2009-08-06 2013-12-10 Freescale Semiconductor, Inc. Electronic device with protection circuit
JP2011176057A (ja) * 2010-02-23 2011-09-08 Panasonic Corp 半導体装置
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EP2602817A1 (de) * 2011-12-05 2013-06-12 Nxp B.V. Integrierte Schaltung und IC-Prüfverfahren
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
JP5865275B2 (ja) * 2013-01-25 2016-02-17 株式会社東芝 高周波半導体スイッチ
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
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Also Published As

Publication number Publication date
EP1367717B1 (de) 2005-12-21
EP1367717A1 (de) 2003-12-03
DE60302831T2 (de) 2006-08-31
JP4262933B2 (ja) 2009-05-13
JP2003347553A (ja) 2003-12-05
US20030222704A1 (en) 2003-12-04
US6836172B2 (en) 2004-12-28

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