DE60236263D1 - Spannungspuffer für grosse Gate Ladungen über den gesamten Versorgungsspannungsbereich und vorzugsweiser Nutzung in Spannungsregler mit kleiner Verlustspannung - Google Patents

Spannungspuffer für grosse Gate Ladungen über den gesamten Versorgungsspannungsbereich und vorzugsweiser Nutzung in Spannungsregler mit kleiner Verlustspannung

Info

Publication number
DE60236263D1
DE60236263D1 DE60236263T DE60236263T DE60236263D1 DE 60236263 D1 DE60236263 D1 DE 60236263D1 DE 60236263 T DE60236263 T DE 60236263T DE 60236263 T DE60236263 T DE 60236263T DE 60236263 D1 DE60236263 D1 DE 60236263D1
Authority
DE
Germany
Prior art keywords
voltage
preferably used
low loss
input transistor
transistor pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236263T
Other languages
English (en)
Inventor
Axel Pannwitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dialog Semiconductor GmbH
Original Assignee
Dialog Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor GmbH filed Critical Dialog Semiconductor GmbH
Application granted granted Critical
Publication of DE60236263D1 publication Critical patent/DE60236263D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3217—Modifications of amplifiers to reduce non-linear distortion in single ended push-pull amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Logic Circuits (AREA)
DE60236263T 2002-07-05 2002-07-05 Spannungspuffer für grosse Gate Ladungen über den gesamten Versorgungsspannungsbereich und vorzugsweiser Nutzung in Spannungsregler mit kleiner Verlustspannung Expired - Lifetime DE60236263D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02368075A EP1378991B1 (de) 2002-07-05 2002-07-05 Spannungspuffer für grosse Gate Ladungen über den gesamten Versorgungsspannungsbereich und vorzugsweiser Nutzung in Spannungsregler mit kleiner Verlustspannung

Publications (1)

Publication Number Publication Date
DE60236263D1 true DE60236263D1 (de) 2010-06-17

Family

ID=27763469

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236263T Expired - Lifetime DE60236263D1 (de) 2002-07-05 2002-07-05 Spannungspuffer für grosse Gate Ladungen über den gesamten Versorgungsspannungsbereich und vorzugsweiser Nutzung in Spannungsregler mit kleiner Verlustspannung

Country Status (5)

Country Link
US (1) US6614280B1 (de)
EP (1) EP1378991B1 (de)
AT (1) ATE467264T1 (de)
DE (1) DE60236263D1 (de)
DK (1) DK1378991T3 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205837B2 (en) * 2003-12-29 2007-04-17 Intel Corporation Body effect amplifier
FR2866763B1 (fr) * 2004-02-19 2006-05-26 St Microelectronics Sa Dispositif d'amplification audio avec circuiterie d'antipop
US7501880B2 (en) * 2005-02-28 2009-03-10 International Business Machines Corporation Body-biased enhanced precision current mirror
US7602161B2 (en) * 2006-05-05 2009-10-13 Standard Microsystems Corporation Voltage regulator with inherent voltage clamping
EP2151732B1 (de) * 2008-08-08 2012-10-17 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Regler mit stabiler Abschaltspannung
US8411493B2 (en) * 2009-10-30 2013-04-02 Honeywell International Inc. Selection device for a spin-torque transfer magnetic random access memory
US8558530B2 (en) 2010-05-26 2013-10-15 Smsc Holdings S.A.R.L. Low power regulator
US9319013B2 (en) * 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
US9817415B2 (en) 2015-07-15 2017-11-14 Qualcomm Incorporated Wide voltage range low drop-out regulators

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3045366C2 (de) * 1980-12-02 1984-02-16 Robert Bosch Gmbh, 7000 Stuttgart Schwellwertschalter
US4563597A (en) * 1982-11-22 1986-01-07 Honeywell Inc. Accurate dead band control circuit
US5726597A (en) * 1996-08-30 1998-03-10 Motorola, Inc. Method and circuit for reducing offset voltages for a differential input stage
US6046577A (en) 1997-01-02 2000-04-04 Texas Instruments Incorporated Low-dropout voltage regulator incorporating a current efficient transient response boost circuit
JP2001510609A (ja) * 1997-12-02 2001-07-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 温度補償された出力基準電圧を有する基準電圧源
US6072349A (en) * 1997-12-31 2000-06-06 Intel Corporation Comparator
US6188211B1 (en) 1998-05-13 2001-02-13 Texas Instruments Incorporated Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response
US6157259A (en) * 1999-04-15 2000-12-05 Tritech Microelectronics, Ltd. Biasing and sizing of the MOS transistor in weak inversion for low voltage applications
US6275094B1 (en) * 1999-06-22 2001-08-14 International Business Machines Corporation CMOS device and circuit and method of operation dynamically controlling threshold voltage
US6140872A (en) * 1999-10-28 2000-10-31 Burr-Brown Corporation Offset-compensated amplifier input stage and method
US6225857B1 (en) 2000-02-08 2001-05-01 Analog Devices, Inc. Non-inverting driver circuit for low-dropout voltage regulator
US6388521B1 (en) * 2000-09-22 2002-05-14 National Semiconductor Corporation MOS differential amplifier with offset compensation
US6400225B1 (en) * 2000-11-20 2002-06-04 National Semiconductor Corporation Differential difference amplifier for amplifying small signals close to zero volts

Also Published As

Publication number Publication date
DK1378991T3 (da) 2010-08-16
US6614280B1 (en) 2003-09-02
ATE467264T1 (de) 2010-05-15
EP1378991A1 (de) 2004-01-07
EP1378991B1 (de) 2010-05-05

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Legal Events

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8364 No opposition during term of opposition