DE60233170D1 - Verfahren zur herstellung eines verbindungshalbleiter-einkristalls - Google Patents

Verfahren zur herstellung eines verbindungshalbleiter-einkristalls

Info

Publication number
DE60233170D1
DE60233170D1 DE60233170T DE60233170T DE60233170D1 DE 60233170 D1 DE60233170 D1 DE 60233170D1 DE 60233170 T DE60233170 T DE 60233170T DE 60233170 T DE60233170 T DE 60233170T DE 60233170 D1 DE60233170 D1 DE 60233170D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor crystal
connecting semiconductor
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60233170T
Other languages
German (de)
English (en)
Inventor
Toshiaki Asahi
Kenji Sato
Atsutoshi Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Application granted granted Critical
Publication of DE60233170D1 publication Critical patent/DE60233170D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE60233170T 2002-02-13 2002-12-17 Verfahren zur herstellung eines verbindungshalbleiter-einkristalls Expired - Lifetime DE60233170D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002035551 2002-02-13
JP2002208530 2002-07-17
JP2002249963A JP4778188B2 (ja) 2002-02-13 2002-08-29 化合物半導体単結晶の製造方法
PCT/JP2002/013165 WO2003068696A1 (en) 2002-02-13 2002-12-17 Production method for compound semiconductor single crystal

Publications (1)

Publication Number Publication Date
DE60233170D1 true DE60233170D1 (de) 2009-09-10

Family

ID=27738906

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60233170T Expired - Lifetime DE60233170D1 (de) 2002-02-13 2002-12-17 Verfahren zur herstellung eines verbindungshalbleiter-einkristalls

Country Status (6)

Country Link
US (1) US7229494B2 (https=)
EP (1) EP1500633B1 (https=)
JP (1) JP4778188B2 (https=)
DE (1) DE60233170D1 (https=)
TW (1) TWI257963B (https=)
WO (1) WO2003068696A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252300B2 (ja) 2002-12-18 2009-04-08 日鉱金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
JP5352245B2 (ja) * 2007-02-14 2013-11-27 Ｊｘ日鉱日石金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
CN112176395A (zh) * 2020-10-13 2021-01-05 福建福晶科技股份有限公司 一种优质大尺寸BiBO晶体熔盐法生长的装置和方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027693A (ja) 1983-07-21 1985-02-12 Toshiba Corp 化合物半導体単結晶の製造方法
JPS6126590A (ja) 1984-07-17 1986-02-05 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法及び装置
JPS6287489A (ja) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd るつぼの回収方法及び装置
JPH0699228B2 (ja) 1986-06-06 1994-12-07 住友電気工業株式会社 単結晶の引上方法
JPS63195188A (ja) 1987-02-06 1988-08-12 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法および製造装置
JPH01294592A (ja) 1988-05-23 1989-11-28 Sumitomo Electric Ind Ltd 単結晶の育成方法
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
DE69122599T2 (de) * 1990-07-26 1997-04-03 Sumitomo Electric Industries Verfahren und gerät zur herstellung von einkristallen
JPH0717792A (ja) 1993-06-30 1995-01-20 Sumitomo Electric Ind Ltd 化合物半導体結晶の製造装置

Also Published As

Publication number Publication date
EP1500633B1 (en) 2009-07-29
JP2004099333A (ja) 2004-04-02
EP1500633A1 (en) 2005-01-26
US7229494B2 (en) 2007-06-12
US20050118739A1 (en) 2005-06-02
TWI257963B (en) 2006-07-11
TW200302883A (en) 2003-08-16
EP1500633A4 (en) 2007-10-24
WO2003068696A1 (en) 2003-08-21
JP4778188B2 (ja) 2011-09-21

Similar Documents

Publication Publication Date Title
DE60327721D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE60303868D1 (de) Verfahren zur Herstellung eines Halbleiterlasers
EP1551768A4 (en) Process for manufacturing a gallium rich gallium nitride film
DE60307157D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE50303605D1 (de) Verfahren zur herstellung eines pressgehärteten bauteils
DE50302301D1 (de) Verfahren zur herstellung eines formteiles
DE60038423D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE60022857D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE60201421D1 (de) Verfahren zur herstellung eines wachsartigen raffinats
ATE414058T1 (de) Verfahren zur herstellung eines sulfinyl- acetamids
DE60328461D1 (de) Verfahren zur herstellung eines chinazolin-4-onderivats
DE60333286D1 (de) Verfahren zur herstellung eines wabenstrukturkörpers
DE50113179D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE60324130D1 (de) Verfahren zur herstellung eines wabenstrukturkörpers
DE60044470D1 (de) Verfahren zur herstellung eines halbleiterelement
ATE466016T1 (de) Verfahren for zur herstellung eines 14- hydroxynormorphinon-derivats
DE50304619D1 (de) Verfahren zur herstellung eines bauteils
DE60212643D1 (de) Verfahren zur herstellung eines reifenkomponentenglieds
DE60225135D1 (de) Verfahren zur herstellung eines halbleiterswafers
DE60317715D1 (de) Verfahren zur herstellung eines sektionaltorpaneels
DE602006011362D1 (de) Verfahren zur herstellung eines (110) silizium-wafers
DE60230982D1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE60221915D1 (de) Verfahren zur herstellung eines solarpanels
DE60317963D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE60209835D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements

Legal Events

Date Code Title Description
8364 No opposition during term of opposition