DE60232356D1 - - Google Patents

Info

Publication number
DE60232356D1
DE60232356D1 DE2002632356 DE60232356A DE60232356D1 DE 60232356 D1 DE60232356 D1 DE 60232356D1 DE 2002632356 DE2002632356 DE 2002632356 DE 60232356 A DE60232356 A DE 60232356A DE 60232356 D1 DE60232356 D1 DE 60232356D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE2002632356
Inventor
Renjie Zhou
Steven K Grumbine
Isaac K Cherian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Microelectronics Corp
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • Y10T156/1002Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1051Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding
DE2002632356 2001-10-24 2002-09-24 Active DE60232356D1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10033152 US6705926B2 (en) 2001-10-24 2001-10-24 Boron-containing polishing system and method
PCT/US2002/031945 WO2003035782A1 (en) 2001-10-24 2002-09-24 Boron-containing polishing system and method

Publications (1)

Publication Number Publication Date
DE60232356D1 true DE60232356D1 (de) 2009-06-25

Family

ID=21868825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002632356 Active DE60232356D1 (de) 2001-10-24 2002-09-24

Country Status (6)

Country Link
US (2) US6705926B2 (de)
EP (1) EP1448736B1 (de)
JP (1) JP2005507165A (de)
CN (1) CN100425666C (de)
DE (1) DE60232356D1 (de)
WO (1) WO2003035782A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
CN1243370C (zh) * 2001-08-09 2006-02-22 第一毛织株式会社 用于金属布线的化学机械抛光的浆液组合物
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
CN101371339A (zh) * 2003-05-12 2009-02-18 高级技术材料公司 用于步骤Ⅱ的铜衬里和其他相关材料的化学机械抛光组合物及其使用方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7566391B2 (en) * 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
US20070218692A1 (en) * 2006-01-31 2007-09-20 Nissan Chemical Industries, Ltd. Copper-based metal polishing compositions and polishing processes
JP5529736B2 (ja) * 2007-07-26 2014-06-25 キャボット マイクロエレクトロニクス コーポレイション 相変化材料を化学的機械的に研磨するための組成物及び方法
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
CA2796759A1 (en) * 2010-04-19 2011-10-27 The University Of Toledo Aldose-ketose transformation for separation and/or chemical conversion of c6 and c5 sugars from biomass materials
KR20130117780A (ko) * 2010-10-07 2013-10-28 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-k 유전층을 갖는 기판의 화학적 기계적 연마 방법
KR20130129369A (ko) * 2010-10-13 2013-11-28 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
US8546617B1 (en) 2012-03-23 2013-10-01 Empire Technology Development Llc Dioxaborinanes and uses thereof
WO2014021845A1 (en) * 2012-07-31 2014-02-06 Empire Technology Development Llc Polymerizable organoboron alkyd resin anti fouling coatings
US9073177B2 (en) * 2012-07-31 2015-07-07 Saint-Gobain Abrasives, Inc. Abrasive article comprising abrasive particles of a composite composition
US9120938B2 (en) 2012-07-31 2015-09-01 Empire Technology Development Llc Polymerizable organoboron alkyd resin anti fouling coatings
CN105209556B (zh) * 2013-03-15 2017-11-14 英派尔科技开发有限公司 含硼化合物和其用途
CN103497128B (zh) * 2013-09-04 2016-06-08 常州大学 一种合成对称二芳基二硫醚的方法
JP2017001136A (ja) * 2015-06-10 2017-01-05 株式会社ディスコ 研削砥石

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB923580A (en) * 1959-06-18 1963-04-10 Standard Oil Co Telomerization of unsaturated hydrocarbons with alkylene glycol borates and telomeric products obtained thereby
FR2624519A1 (fr) 1987-12-09 1989-06-16 Rhone Poulenc Chimie Composition de polissage perfectionnee a base de cerium et son procede de preparation
JP2586319B2 (ja) * 1993-12-15 1997-02-26 日本電気株式会社 半導体基板の研磨方法
JP2600600B2 (ja) * 1993-12-21 1997-04-16 日本電気株式会社 研磨剤とその製法及びそれを用いた半導体装置の製造方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5840629A (en) * 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5780358A (en) * 1996-04-08 1998-07-14 Chartered Semiconductor Manufacturing Ltd. Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers
US5840132A (en) * 1996-04-24 1998-11-24 Arch Development Corporation Lubricated boride surfaces
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5885334A (en) * 1996-05-15 1999-03-23 Kabushiki Kaisha Kobe Seiko Sho Polishing fluid composition and polishing method
DE69733102T2 (de) * 1996-06-05 2006-03-02 Wako Pure Chemical Industries, Ltd. Reinigungsmittel
US5827781A (en) * 1996-07-17 1998-10-27 Micron Technology, Inc. Planarization slurry including a dispersant and method of using same
US5916819A (en) * 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
EP0846741A1 (de) 1996-12-05 1998-06-10 Fujimi Incorporated Politurzusammensetzung
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5756398A (en) * 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US5770103A (en) * 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6190237B1 (en) 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6174227B1 (en) * 1997-11-07 2001-01-16 Nikon Corporation Polishing pad and polishing apparatus using the same
JP4163788B2 (ja) 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
JP3126954B2 (ja) * 1998-07-23 2001-01-22 エターナル ケミカル シーオー.,エルティーディー. 半導体プロセスに使用する化学機械的研磨剤組成物
JP2000136375A (ja) 1998-10-30 2000-05-16 Okamoto Machine Tool Works Ltd 研磨剤スラリ−
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6169034B1 (en) 1998-11-25 2001-01-02 Advanced Micro Devices, Inc. Chemically removable Cu CMP slurry abrasive
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6238592B1 (en) 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication

Also Published As

Publication number Publication date Type
CN100425666C (zh) 2008-10-15 grant
EP1448736B1 (de) 2009-05-13 grant
EP1448736A1 (de) 2004-08-25 application
US20030077985A1 (en) 2003-04-24 application
CN1575325A (zh) 2005-02-02 application
WO2003035782A1 (en) 2003-05-01 application
JP2005507165A (ja) 2005-03-10 application
US7001253B2 (en) 2006-02-21 grant
US20040180612A1 (en) 2004-09-16 application
US6705926B2 (en) 2004-03-16 grant

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Legal Events

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