DE60230124D1 - With increased power by means of electron radiation and this integrated circuit with transistor gate - Google Patents

With increased power by means of electron radiation and this integrated circuit with transistor gate

Info

Publication number
DE60230124D1
DE60230124D1 DE2002630124 DE60230124A DE60230124D1 DE 60230124 D1 DE60230124 D1 DE 60230124D1 DE 2002630124 DE2002630124 DE 2002630124 DE 60230124 A DE60230124 A DE 60230124A DE 60230124 D1 DE60230124 D1 DE 60230124D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE2002630124
Other languages
German (de)
Inventor
Philip A Fisher
Chih-Yuh Yang
Marina V Plat
Russell R Callahan
Ashok M Khathuria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

DE2002630124 2001-03-28 2002-02-22 With increased power by means of electron radiation and this integrated circuit with transistor gate Active DE60230124D1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US09819344 US6653231B2 (en) 2001-03-28 2001-03-28 Process for reducing the critical dimensions of integrated circuit device features
US09820143 US6774365B2 (en) 2001-03-28 2001-03-28 SEM inspection and analysis of patterned photoresist features
US09819552 US6815359B2 (en) 2001-03-28 2001-03-28 Process for improving the etch stability of ultra-thin photoresist
US09819343 US6716571B2 (en) 2001-03-28 2001-03-28 Selective photoresist hardening to facilitate lateral trimming
US09819342 US6630288B2 (en) 2001-03-28 2001-03-28 Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US09819692 US6589709B1 (en) 2001-03-28 2001-03-28 Process for preventing deformation of patterned photoresist features
US10017855 US6828259B2 (en) 2001-03-28 2001-12-14 Enhanced transistor gate using E-beam radiation
PCT/US2002/005640 WO2002078095A3 (en) 2001-03-28 2002-02-22 Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate

Publications (1)

Publication Number Publication Date
DE60230124D1 true DE60230124D1 (en) 2009-01-15

Family

ID=40121781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002630124 Active DE60230124D1 (en) 2001-03-28 2002-02-22 With increased power by means of electron radiation and this integrated circuit with transistor gate

Country Status (1)

Country Link
DE (1) DE60230124D1 (en)

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES, INC., GRAND CAYMANN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,