DE60222373D1 - Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren - Google Patents

Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren

Info

Publication number
DE60222373D1
DE60222373D1 DE60222373T DE60222373T DE60222373D1 DE 60222373 D1 DE60222373 D1 DE 60222373D1 DE 60222373 T DE60222373 T DE 60222373T DE 60222373 T DE60222373 T DE 60222373T DE 60222373 D1 DE60222373 D1 DE 60222373D1
Authority
DE
Germany
Prior art keywords
memory cell
manufacturing process
phase change
change memory
optimized heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60222373T
Other languages
English (en)
Other versions
DE60222373T2 (de
Inventor
Giulio Casagrande
Roberto Bez
Fabio Pellizzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Ovonyx Inc
Original Assignee
STMicroelectronics SRL
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Ovonyx Inc filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60222373D1 publication Critical patent/DE60222373D1/de
Publication of DE60222373T2 publication Critical patent/DE60222373T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE60222373T 2002-02-20 2002-02-20 Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren Expired - Lifetime DE60222373T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425088A EP1339103B1 (de) 2002-02-20 2002-02-20 Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE60222373D1 true DE60222373D1 (de) 2007-10-25
DE60222373T2 DE60222373T2 (de) 2008-06-12

Family

ID=27635929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60222373T Expired - Lifetime DE60222373T2 (de) 2002-02-20 2002-02-20 Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren

Country Status (2)

Country Link
EP (1) EP1339103B1 (de)
DE (1) DE60222373T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786550A (zh) * 2019-03-18 2019-05-21 江苏时代全芯存储科技股份有限公司 相变化记忆体及其制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60328960D1 (de) * 2003-04-16 2009-10-08 St Microelectronics Srl Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle
DE102007058456A1 (de) * 2007-12-05 2009-06-10 Qimonda Ag Integrierte Schaltung sowie Verfahren zum Herstellen einer integrierten Schaltung
CN102403452B (zh) * 2010-09-17 2014-02-19 中芯国际集成电路制造(北京)有限公司 相变存储器件及其制造方法
CN105185905B (zh) * 2015-10-16 2019-06-14 江苏时代全芯存储科技有限公司 相变化存储装置及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
CN1210819C (zh) * 1999-03-25 2005-07-13 能源变换设备有限公司 带有改进的接触点的电可编程存储器元件
WO2002009206A1 (en) * 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786550A (zh) * 2019-03-18 2019-05-21 江苏时代全芯存储科技股份有限公司 相变化记忆体及其制造方法
CN109786550B (zh) * 2019-03-18 2024-04-05 北京时代全芯存储技术股份有限公司 相变化记忆体及其制造方法

Also Published As

Publication number Publication date
EP1339103B1 (de) 2007-09-12
EP1339103A1 (de) 2003-08-27
DE60222373T2 (de) 2008-06-12

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DE60222373D1 (de) Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren

Legal Events

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